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    DIODE 248 Search Results

    DIODE 248 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 248 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    biconvex lens with focal length 1 m and diameter 25.4 mm

    Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
    Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power


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    PDF 658nm ML1016R 685nm ML1012R 785nm ML64114R Revised11JUN99 biconvex lens with focal length 1 m and diameter 25.4 mm laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011

    BY 255 diode

    Abstract: High power laser diode SLD202U SLD202V diode marking code 77 pd 69 diode 820 nm laser diode sony lasers diode MARKING CODE 4W diode anode common
    Text: SLD202U/V 25mW High Power Laser Diode For the availability of this product, please contact the sales office. Description The SLD202U/V is a gain-guided high-power laser diode fabricated by MOCVD. SLD202U M-221 SLD202V M-248 Features High power laser diode with the excellent general


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    PDF SLD202U/V SLD202U/V SLD202U M-221 SLD202V M-248 M-221 LO-11) BY 255 diode High power laser diode SLD202U SLD202V diode marking code 77 pd 69 diode 820 nm laser diode sony lasers diode MARKING CODE 4W diode anode common

    laser diode for printer

    Abstract: laser printer high voltage diagram block diagram of diode operation laser diode 760 Laser Diode 10 pin laser diode 780 nm SLD201U SLD201V laser diode laser printer circuit diagram
    Text: SLD201U/V 20mW High Power Laser Diode For the availability of this product, please contact the sales office. Description The SLD201U/V is a gain-guided high-power laser diode fabricated by MOCVD. SLD201U M-221 SLD201V M-248 Features High power laser diode with the excellent general


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    PDF SLD201U/V SLD201U/V SLD201U M-221 SLD201V M-248 M-221 LO-11) laser diode for printer laser printer high voltage diagram block diagram of diode operation laser diode 760 Laser Diode 10 pin laser diode 780 nm SLD201U SLD201V laser diode laser printer circuit diagram

    C10V

    Abstract: C25V SVC333 IN 4004 diode diode IN 4004 3662 diode
    Text: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode


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    PDF EN935B SVC333 SVC333 SVC333] C10V C25V IN 4004 diode diode IN 4004 3662 diode

    BAP51-02

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.


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    PDF M3D319 BAP51-02 OD523 MAM405 OD523) 125004/00/02/pp6 BAP51-02 BP317

    109 DIODE

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.


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    PDF M3D319 BAP50-02 OD523 MAM405 OD523) 613512/01/pp8 109 DIODE

    BAS70L

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring


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    PDF M3D891 BAS70L OD882 MDB391 SCA75 613514/01/pp8 BAS70L

    diode Marking code v3

    Abstract: ,diode Marking code v3 marking code diode V3 SLD202U SLD202U-3 SLD202V-3 820 nm laser diode
    Text: SLD202U-3/V-3 50mW High Power Laser Diode For the availability of this product, please contact the sales office. Description SLD202U-3/V-3 is a gain-guided high-power laser diode fabricated by MOCVD. SLD202U-3 M-221 SLD202V-3 M-248 Features High power laser diode with the excellent general


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    PDF SLD202U-3/V-3 SLD202U-3/V-3 SLD202U-3 M-221 SLD202V-3 M-248 M-221 LO-11) diode Marking code v3 ,diode Marking code v3 marking code diode V3 SLD202U SLD202U-3 SLD202V-3 820 nm laser diode

    1PS10SB63

    Abstract: MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW 1PS10SB63 Schottky barrier diode Product specification 2003 Aug 20 Philips Semiconductors Product specification Schottky barrier diode 1PS10SB63 FEATURES DESCRIPTION • Very low diode capacitance An epitaxial Schottky barrier diode encapsulated in a


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    PDF M3D891 1PS10SB63 OD882 MDB391 SCA75 613514/01/pp7 1PS10SB63 MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4

    BAS40L

    Abstract: marking code s6 SOD-882L
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring


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    PDF M3D891 BAS40L OD882 MDB391 SCA75 613514/01/pp8 BAS40L marking code s6 SOD-882L

    SLD201V-3

    Abstract: diode Marking code v3 SLD201V3 ,diode Marking code v3 SLD201U-3
    Text: SLD201U-3/V-3 50mW High Power Laser Diode For the availability of this product, please contact the sales office. Description The SLD201U-3/V-3 is a gain-guided high-power laser diode fabricated by MOCVD. SLD201U-3 M-221 SLD201V-3 M-248 Features High power laser diode with the excellent general


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    PDF SLD201U-3/V-3 SLD201U-3/V-3 SLD201U-3 M-221 SLD201V-3 M-248 M-221 LO-11) SLD201V-3 diode Marking code v3 SLD201V3 ,diode Marking code v3 SLD201U-3

    D3012B5

    Abstract: No abstract text available
    Text: Silicon Carbide Schottky Diode IDW30G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW30G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1


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    PDF IDW30G120C5B D3012B5

    hc4-dc12v

    Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
    Text: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,


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    PDF 25Y-3N, 25Y-3S 25-3X, 1071-A 25-3S 25-3TA 25-M3 hc4-dc12v HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F

    DIODE A6 sod110

    Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
    Text: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation


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    PDF OD110 OD110 innovat27 SCB63 DIODE A6 sod110 sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323

    BAP51-03

    Abstract: SC-76 smd diode S4 BAP51 Series
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 Aug 16 2004 Feb 11 Philips Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance


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    PDF BAP51-03 OD323 sym006 OD323) SCA76 R77/04/pp7 BAP51-03 SC-76 smd diode S4 BAP51 Series

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Mar 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance


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    PDF M3D319 BAP63-02 BAP63-02 OD523 OD523) MAM405 125004/04/pp7

    SLD301V-1

    Abstract: SLD301V SLD301V-2 SLD301V-21 SLD301V-24 SLD301V-25 SLD301V-3
    Text: SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current M-248 Po = 90mW


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    PDF SLD301V 100mW SLD301V M-248 LO-11) SLD301V-1 SLD301V-2 SLD301V-21 SLD301V-24 SLD301V-25 SLD301V-3

    248 830

    Abstract: No abstract text available
    Text: SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current M-248 Po = 90mW


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    PDF SLD301V 100mW SLD301V M-248 LO-11) 248 830

    S3 DIODE schottky

    Abstract: SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product specification 2003 Jun 23 Philips Semiconductors Product specification Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882


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    PDF M3D891 BAT54L OD882 MDB391 SCA75 613514/01/pp8 S3 DIODE schottky SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882

    marking code k1

    Abstract: BAP51-02 smd marking KM
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance


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    PDF M3D319 BAP51-02 OD523 MAM405 OD523) 613514/02/pp8 marking code k1 BAP51-02 smd marking KM

    triac tic 236

    Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
    Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD


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    PDF 1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A triac tic 236 SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC

    SMD diode sg 46

    Abstract: SMD diode sg 03
    Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS


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    PDF BAP50-03 SCA61 SMD diode sg 46 SMD diode sg 03

    SVC333

    Abstract: C25V Ne935-2 ACM 944 1096-11 c30 diode
    Text: Ordering number : EN935B _ S VC 33 3 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode works at high tuning voltage and has the high Q and the sufficiently high capacitance ratio and


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    PDF EN935B SVC333 Ne935-4/4 C25V Ne935-2 ACM 944 1096-11 c30 diode

    diode a62

    Abstract: BAP51-03 diode smd ED 74 lm 9805
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance


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    PDF BAP51 BAP51-03 diode a62 BAP51-03 diode smd ED 74 lm 9805