SSM5H14F
Abstract: No abstract text available
Text: SSM5H14F Silicon N Channel MOS Type U-MOSⅢ /Silicon Epitaxial Schottky Barrier Diode SSM5H14F ○ Fuse cut applications of the battery pack • • 1.8-V drive An N-ch MOSFET and a Schottky Barrier Diode in one package. • Low RDS (ON) and Low VF Unit: mm
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SSM5H14F
SC-74A
SSM5H14F
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Untitled
Abstract: No abstract text available
Text: SSM5H14F Silicon N Channel MOS Type U-MOS /Silicon Epitaxial Schottky Barrier Diode SSM5H14F Fuse cut applications of the battery pack • • 1.8-V drive An N-ch MOSFET and a Schottky Barrier Diode in one package. • Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings
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SSM5H14F
SC-74A
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Untitled
Abstract: No abstract text available
Text: SOT-23 SURFACE MOUNT LED LAMP KM-23LSGD-F SUPER BRIGHT GREEN Features Description ! SOT-23 The Super Bright Green source color devices are PACKAGE SURFACE MOUNT LED LAMP. !LOW POWER CONSUMPTION. made with Gallium Phosphide Green Light Emitting ! LONG Diode.
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OT-23
KM-23LSGD-F
OT-23
2000PCS
DSAB4761
FEB/27/2003
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FMJ-23L
Abstract: DIODE 23L
Text: SANKEN ELECTRIC CO., LTD. FMJ-23L 1. Scope The present specifications shall apply to an FMJ-23L. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications Flammability：UL94V-0 Equivalent High Frequency Rectification, etc. 3. Absolute maximum ratings
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FMJ-23L
FMJ-23L.
FlammabilityUL94V-0
FMJ-23L
FMJ23L
DIODE 23L
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FMJ-23L
Abstract: No abstract text available
Text: 10A Schottky barrier diode in TO220F package FMJ-23L •Absolute maximum ratings Parameter Ratings Unit VRM 30 V IF AV 10 A IFSM 100 A I t ■Electrical characteristics Conditions Ratings Unit VF 0.45max V IF=5.0A Conditions IR 5.0max mA VR=VRM 50max mA Tj=125°C, VR=VRM
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O220F
FMJ-23L
45max
50max
250max
FMJ-23L
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR SMFB23L TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. E 2 FEATURES Low Profile Surface Mount Package. Low Power Loss, High Efficiency. E Low Forward Voltage : VFM=0.36V Max. F 1 APPLICATION C D Switching Power Supply.
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SMFB23L
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smfb23l
Abstract: No abstract text available
Text: SEMICONDUCTOR SMFB23L TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. E 2 FEATURES Low Profile Surface Mount Package. Low Power Loss, High Efficiency. E Low Forward Voltage : VFM=0.36V Max. F 1 APPLICATION C D Switching Power Supply.
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SMFB23L
smfb23l
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Untitled
Abstract: No abstract text available
Text: SMZ 1 . SMZ 200 2W 8 B + 7 > Absolute Maximum Ratings Symbol Conditions Surface mount diode Zener silicon diodes > 7 84 B + &% C ' = > 7 E 4 F E 8 Features
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Untitled
Abstract: No abstract text available
Text: SZ3C 1 . SZ3C 200 3W 8 B + 7 > Absolute Maximum Ratings Symbol Conditions Surface mount diode Zener silicon diodes > 7 84 B + &% C ' = > 7 E 4 F E 8 Features
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diode array
Abstract: C6005
Text: 32-Unit High Voltage Diode Array LZ1030M • LZ1030M 32-Unit High Voltage Diode Array Pin Connections Description The LZ1030M is a high voltage diode array orga nized as a 3 2 -circuit of anode common. l33ll32ll3Ï1l3Qll29l|2sll27ll26ll25l|24l|23l ■ 1.
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32-Unit
LZ1030M
LZ1030M
l33ll32ll3
1l3Qll29l
2sll27ll26ll25l
32-circuit
32-unit/package
diode array
C6005
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395GN-0091IB
Abstract: No abstract text available
Text: TK11816, TK11817 TK11818, TK11819 Power Conversion ICs DC-DC CONVERTER FEATURES APPLICATIONS • Very Small Size SOT - 23L ■ Variable Capacitance and PIN Diode Bias ■ Few External Components ■ Portable Instrumentation ■ Internal Rectifier and Regulator
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TK11816,
TK11817
TK11818,
TK11819
TK1181X
395GN-0091IB
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Untitled
Abstract: No abstract text available
Text: r & T O K TK11816, TK11817, TK11818, TK11819 O DC-DC CONVERTER FEATURES APPLICATIONS • Miniature Package SOT-23L-6 ■ Variable Capacitance and PIN Diode Bias ■ Few External Components ■ Portable Instrumentation ■ Internal Rectifier and Regulator
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TK11816,
TK11817,
TK11818,
TK11819
OT-23L-6)
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TOKO VARIABLE INDUCTOR
Abstract: diode marking code 2T
Text: r & T O K TK11816, TK11817, TK11818, TK11819 O DC-DC CONVERTER FEATURES APPLICATIONS • Miniature Package SOT-23L-6 ■ Variable Capacitance and PIN Diode Bias ■ Few External Components ■ Portable Instrumentation ■ Internal Rectifier and Regulator
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TK11816,
TK11817,
TK11818,
TK11819
OT-23L-6)
TK1181
TOKO VARIABLE INDUCTOR
diode marking code 2T
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Untitled
Abstract: No abstract text available
Text: FU-02LE-N,FU-23LE 0.85 u m LED Module for Multimode Fiber LED Module,FU-02LE-N and FU-23LE contain a highly-reliable 0.85/rm band AlGaAs/Ga Lightemitting diode and are used as light source for both digital and analog optical communication systems. FEATURES
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FU-02LE-N
FU-23LE
FU-23LE
85/rm
FU-02LE-N
-02LE-N
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IR LED 780 nm
Abstract: No abstract text available
Text: MITSUBISHI DISCRETE SC i blE D oomam aas « hits FU-02LE-N,FU-23LE 0.85 Mm LED Module for Multimode Fiber LED Module, F U -02L E -N and FU-23LE contain a highly-reliable 0.85;um band AlGaAs/Ga L ightem itting diode and are used as light source for both digital and analog optical com m unication
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FU-02LE-N
FU-23LE
FU-23LE
FU-02LE-N
-02LE
Pul-23LE
50/im
IR LED 780 nm
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IR LED 780 nm
Abstract: IR LED 840 nm FU-02LE-N FU-23LE
Text: MITSUBISHI DISCRETE SC blE D • bSM'lôE'i 0 0 1 4 0 1 4 ÛÛ3 « H I T S FU-02LE-N,FU-23LE 0.85 |i m LED Module for Multimode Fiber LED Module, FU-02LE-N and FU-23LE contain a highly-reliable 0.85;tim band AlGaAs/Ga Lightem itting diode and are used as light source for
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FU-02LE-N
FU-23LE
FU-23LE
FU-02LE-N
IR LED 780 nm
IR LED 840 nm
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H23L1
Abstract: EI114
Text: G E SOLI» STATE 01 Optoelectronic Specifications. DE J 3fl?SDfll □ □ l c]flD4 D | Ì ^ H ì- K Matched Emitter-Detector Pair H23L1 SYM A B Bi ÿb bi O E El e ei G L Lt R 5 T T he G E Solid State H 23L1 is a matched emitter-detector pair which consists o f a gallium arsenide, infrared emitting diode and a
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H23L1
H23L1
270fl
EI114
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR SMFB23L TE CHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SW ITC H IN G TY PE POW ER SUPPLY A PPLICATIONS. FEA TU R ES • Low Profile Surface M ount Package. -I— • Low Power Loss, High Efficiency. - t • Low Forward Voltage : V FM=0.36V Max.
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SMFB23L
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2 Wavelength Laser Diode
Abstract: DFB ea l565 Laser-Diode 1550 nm 10gbps ML9SM31 ML9XX31
Text: A MITSUBISHI LASER DIODES PRELIMINARY _ g y v i i ^ F R T F S l It I I i ß s \ /X . 7X Notice: Some parametric limits are subject to change k5JEi JVJLEi i J InGaAsP DFB-LASER DIODE WITH EA MODULATOR TYPE NAME DESCRIPTION FEATURES ML9XX31 series are lOGbps DFB Distributed Feedback
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ML9XX31
1530nmto
1565nm
ML9SM31
Hig50km
2 Wavelength Laser Diode
DFB ea
l565
Laser-Diode 1550 nm 10gbps
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Untitled
Abstract: No abstract text available
Text: SU-10PSR 10 Gb/s PIN Receiver SENSORS UNLIMITED, INC. A Division Of: F I Tl i S I Y The SU-10PSR is a high-speed receiver module that integrates an InGaAs pin diode with a Gallium Arsenide HBT preamplifier and complies with the standard requirements of OC-192/STM-64 SONET/SDH systems.
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OC-192/STM-64
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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Untitled
Abstract: No abstract text available
Text: BSE D • Ö23b32ü OOlbbOS 2 H S I P Silicon Switching Diode Array _ S IE M E N S / S P C Li SMBD 6100 S E M IC O N D S _ 1 2 ^ 2 ^ 2 3 • For high-speed sw itching applications • Comm on cathode Type M a rk in g O rd e rin g c o d e fo r
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23b32Ã
23L32Q
SMBD6100
T-03-09
fl23b320
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LA1261
Abstract: tv 256 diode colo tv ic sanyo LA1186N G206 LA1186 186N 2097MHz
Text: number : EN 1 8 4 0 A Monolithic Linear IC NO.1840A L A 1 1 8 6 N RONT E n d Ra d io -Ca s s e t t e R e c o r d e r sF B f¡ U S I C for Ce n t e r s Features and Functions . Contains RF amp, MIX, OSC, AFC diode. . Operating voltage: 1.8 to 8.0V. . I m p r o v e m e n t in cross modulation characteristic due to the use of double*
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LA1186N
LA1261
tv 256 diode
colo tv ic sanyo
LA1186N
G206
LA1186
186N
2097MHz
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1h31
Abstract: 5961 b sj IN3164 1N3164 1N3168 1N3170 1N3172 1N3174 1N3176 1N3177
Text: MIL SPECS IC| GOODIES 00023^10 | MI L - S -19 b 0 0 / 2 1 1 r5 AMEv',-'7lfT ? 23 Fubrii^-v i3S5 SUPERS-L^C AMENDM^'-T 2 October MILITARY 2 i9 3 , SPECIFICATION S E M I C O N D U C T O R DE VICE, DIODE, S IL ICO N, POWER RE C T I F I E R T Y P E S 1 N 3 1 6 4 , 1 N 3 1 6 8 , IN 31 7 0 , 1 N 3 1 7 2 , 1 N 3 1 7 4 , 1 N 3 1 7 5 ,
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0Q0012S
-1Q600/
1N3164,
1N3168,
1N3170,
1N3172,
1N3174,
1W3175.
1N3176,
1N3177,
1h31
5961 b sj
IN3164
1N3164
1N3168
1N3170
1N3172
1N3174
1N3176
1N3177
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