Untitled
Abstract: No abstract text available
Text: 5082-2216 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Band Test Freq3.0G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0
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Min200
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Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 10 Oct, 2006 Data Sheet Issue:- 1 IXYS Company Provisional Data Wespack Rectifier Diode Types W5334MK200-W5334MK220 Previous Type No.: W4987MK200-220 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1
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W5334MK200-W5334MK220
W4987MK200-220
W5334MK200
W5334MK220
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W5334MK
Abstract: AD22150 D-68623 W5334MK200
Text: WESTCODE An Date:- 10 Oct, 2006 Data Sheet Issue:- 1 IXYS Company Provisional Data Wespack Rectifier Diode Types W5334MK200-W5334MK220 Previous Type No.: W4987MK200-220 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1
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W5334MK200-W5334MK220
W4987MK200-220
not62)
W5334MK200
W5334MK220
W5334MK
AD22150
D-68623
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DIODE 2216
Abstract: D1069N D1809N D269N D3301N D749N D849N DIODE 22-16
Text: M3 - Schaltung ~ Anschlußspannung ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A] [W]
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D749N
D849N
D1069N
D1809N
DIODE 2216
D1069N
D1809N
D269N
D3301N
D749N
D849N
DIODE 22-16
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22-16 diode
Abstract: DIODE 2216 DIODE 22-16 D1809N D1069N D269N D3301N D749N D849N diode c 120 926
Text: M3 - Schaltung ~ Anschlußspannung ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A] [W]
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D749N
D849N
D1069N
D1809N
D3301N
22-16 diode
DIODE 2216
DIODE 22-16
D1809N
D1069N
D269N
D3301N
D749N
D849N
diode c 120 926
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Untitled
Abstract: No abstract text available
Text: 70-W224NIA400SH-M400P datasheet flow NPC 4w 2400 V / 400 A Features flow SCREW 4w housing ● 2400V NPC-topology 2x 1200V ● High power screw interface ● Low inductive interface for external DC-capacitors and paralleling on component level ● Snubber diode for optional asymmetrical inductance
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70-W224NIA400SH-M400P
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voltage multiplier
Abstract: draloric Voltage Multiplier ICs multiplier Vishay OR Draloric vishay resistor sets VISHAY RESISTORS vishay draloric
Text: RHK Vishay Draloric Voltage Multiplier Sets VOLTAGE MULTIPLIER SETS Vishay Draloric have the facilities to produce custom style Voltage Multiplier Sets: • build up from two or more stacks • completely soldered with diodes and resistors The RHK. Cascade above, shows an example of 2 stacks complete with diode.
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21-Feb-02
voltage multiplier
draloric
Voltage Multiplier ICs
multiplier
Vishay OR Draloric
vishay resistor
sets
VISHAY RESISTORS
vishay draloric
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draloric
Abstract: voltage multiplier
Text: RHK Vishay Draloric Voltage Multiplier Sets VOLTAGE MULTIPLIER SETS Vishay Draloric have the facilities to produce custom style Voltage Multiplier Sets: • build up from two or more stacks • completely soldered with diodes and resistors The RHK. Cascade above, shows an example of 2 stacks complete with diode.
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21-Feb-02
08-Apr-05
draloric
voltage multiplier
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IRFF9130
Abstract: No abstract text available
Text: IRFF9130 Data Sheet February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET File Number 2216.3 Features • -6.5A, -100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF9130
-100V,
-100V
IRFF9130
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50no3
Abstract: ixys vuo 52 input id VUO 190-08NO7 VVZ24 100-16no 70no7 8614n vvz 175 fast recovery epitaxial diode FRED module bridge INVERTER 500 W SMPS
Text: 3~ Rectifier Bridges Contents A 1 2 3 4 5 6 Page VUO 16-.NO1 VUO 22-.NO1 VUO 25-.NO8 VUO 28-.NO8 VUO 36-.NO8 VUO 35-.NO7 VUO 34-.NO1 VUO 30-.NO3 VUO 52-.NO1 VUO 50-.NO3 VUO 55-.NO7 VUO 62-.NO7 VUO 68-.NO7 VUO 70-.NO7 VUO 60-.NO3 VUO 80-.NO1
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F2-11
F2-13
F2-15
F2-17
F2-19
F2-21
F2-23
F2-24
F2-25
F2-26
50no3
ixys vuo 52 input id
VUO 190-08NO7
VVZ24
100-16no
70no7
8614n
vvz 175
fast recovery epitaxial diode FRED module bridge
INVERTER 500 W SMPS
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VVY 40-16IO1
Abstract: B2HKF ixys vhf 28-08io5 vgo 36-08io7 vvy40 ixys vuo 52 input id VKO 15-08io5 VUM 33-05 F1-10 F1-20
Text: 1~ Rectifier Bridges & PFC Modules Contents 1 2 1 3 5 18 21 21 30 31 35 38 40 45 50 52 54 55 65 68 72 107 124 122 174 2000 1600 20 ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 1400 06 08 12 14 16 18 ● ● ● ● ● ●
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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DIODE C06
Abstract: EECO THUMBWHEEL Switch Cinch Connectors E20SM diode marking 714 KELVIN-VARLEY DIVIDER 2214G 2299G 2229G 2216G
Text: 2000 SERIES THUMBWHEEL SWITCHES EECO’s 2000 Series is ideal for demanding industrial control applications. The large size of the switch makes it easy to operate, even if the operator is wearing gloves. The 2000 Series is available with an optional internal
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Untitled
Abstract: No abstract text available
Text: VBO 22 IdAV = 21 A VRRM = 800-1800 V Single Phase Rectiier Bridge VRSM V 900 1300 1700 1900 VRRM V 800 1200 1600 1800 - + Type VBO 22-08NO8 VBO 22-12NO8 VBO 22-16NO8 VBO 22-18NO8 ~ ~ ~ + - Symbol Conditions IdAV IdAVM TC = 85°C, module TC = 63°C, module
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22-08NO8
22-12NO8
22-16NO8
22-18NO8
20120814d
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avalanche photodiode ingaas ghz
Abstract: No abstract text available
Text: N EC ELECTRONI CS INC bZE ]> • b427S5S Ga 3 û l 3 1 Ô1S H N E C E DATA SHEET NEC PHOTO DIODE NDL5520C ELECTRON DEVICE 2 .5 Gb/s OPTICAL FIBER COMMUNICATIONS 050 Mm InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5520C is an InGaAs Avalanche Photodiode especially designed for a detector of 25 Gb/s optical fiber communication
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b427S5S
NDL5520C
NDL5520C
NDL5520P
NDL5501P
NDL5520P1
NDL5501P1
NDL5506P:
GI-50
NDL5516P:
avalanche photodiode ingaas ghz
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode • SMBD 6050 For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 6050 s5A Q68000-A8439 Pin Configuration Package1) SOT-23 1- -O rv j 3 O EHA070M Maximum Ratings Parameter
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Q68000-A8439
OT-23
H35L0S
D1E251Q
53SbOS
D12H512
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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Untitled
Abstract: No abstract text available
Text: TIL181 OPTOCOUPLER D 2 9 0 6 , OCTOBER 1 9 8 5 -R E V IS E D MARCH 1 98 8 COMPATIBLE W ITH STANDARD TTL INTEGRATED CIRCUITS • Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor • High Direct-Current Transfer Ratio
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TIL181
1501B,
1506B,
1512B,
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Untitled
Abstract: No abstract text available
Text: G ris SWITCHES These circuits operate from DC to 3 GHz and use GaAs M M IC switches to control the RF signal path. They are available wilh or without TTL or CMOS drivers. They should be used in place of PIN Diode switches when fast switching speed and low DC Power consumption is important.
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TWM6001
N6002
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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PDF
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1n2222 general diode
Abstract: 1N2222 1n22 1N2218 1N2219 0880 1N2024 1N2025 1N2027 1N2029
Text: 3869720 GENERAL D IO D E CO RP GENERAL DIODE CORP 86D ~ flb 00326 DE | D T - o / ' f f OODDBSb 7 | ~ ST U D M O U N T ED SILICON POW ER RECTIFIERS . . . cont'd 1 % 10 @ 150 10 @ 150 1 @ 150 1 @ 150 1 @ 150 5 @150 5 @150 0.5 @ 150 0.5 @ 150 0.5 @ 150 1 @ 150
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1N2024
1N2025
1N202S
1N2027
1N2029
1N2030
1N2031
1N2128
1N2128A
1n2222 general diode
1N2222
1n22
1N2218
1N2219
0880
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diode avalanche DSA 2-16a
Abstract: diode avalanche DSA diode avalanche DSA 1-14 DSA 22-12 A diode avalanche DSA 17-14 A diode avalanche DSA 25 8
Text: A S E A BRO WN/ABB SEMICON 03 D I 00MÖ3DÖ □ □ □ □ ! £ ? I T - o I- ot SE2HHS£tu7"^ Netzdioden Rectifier diodes Diode Vrrm IpRMS Ifavi os DSA Typ/type DS DS DS DS DS 1-04 1-08 1-12 1-14 1-16 f DSI DS 1,2-04 E DS 1,2-08 E DS 1,2-12 E DS 1,2-14 E
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IRFF9131
Abstract: IRFF9133 IRFF9130 IRFF9132 transistors c 2216
Text: Rugged Power MOSFETs IRFF9130, IRFF9131 IRFF9132, IRFF9133 F ile N u m b e r 2216 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5A and -6.5A, -60V and -100V ibs on = 0.30Q and 0.400 TERMINAL DIAGRAM □ Features: • S in g le p u ls e a va la n ch e e n e rg y ra te d
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IRFF9130,
IRFF9131
IRFF9132,
IRFF9133
-100V
92CS-43296
IRFF9131,
IRFF9132
IRFF9133
IRFF9130
transistors c 2216
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