HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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D1029N
Abstract: D2209N D2659N D4401N D660N D748N 221-42
Text: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 390 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]
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D748N
D660N
D1029N
D2209N
D1029N
D2209N
D2659N
D4401N
D660N
D748N
221-42
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C1890A
Abstract: GPDP4189 GPDP4189T002 2967A 1890A
Text: Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it GPDP4189 AVALANCHE RECTIFIER DIODE VOLTAGE UP TO AVERAGE CURRENT SURGE CURRENT BLOCKING CHARACTERISTICS
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GPDP4189
GPDP4189T002
C1890A
GPDP4189
GPDP4189T002
2967A
1890A
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thyristor 4092
Abstract: D1029N D2209N D2659N D4401N D660N D748N
Text: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 390 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]
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D748N
D660N
D1029N
D2209N
thyristor 4092
D1029N
D2209N
D2659N
D4401N
D660N
D748N
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Untitled
Abstract: No abstract text available
Text: Green Power Solutions srl Via Venezia 34D - 10088 Volpiano TO , Italy Phone: +39-011-988 2251 Fax: +39-011-988 1358 Web: www.gpsemi.it e-mail: info@gpsemi.it GPDP4189 AVALANCHE RECTIFIER DIODE VOLTAGE UP TO AVERAGE CURRENT SURGE CURRENT BLOCKING CHARACTERISTICS
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GPDP4189
GPDP4189T002
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T161-160
Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.
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ISO9001
to300
SF15CL
500Aelement
T161-160
SCR T161-160
t153-630
KP25A
T123-250
tc171
ZP50A
T143-630 SCR
KP200A
T151-100
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Untitled
Abstract: No abstract text available
Text: APT70GR65B2DU40 APT70GR65B2DU40 650V, 70A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between
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APT70GR65B2DU40
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Untitled
Abstract: No abstract text available
Text: SKCD 121 C 060 I3 Absolute Maximum Ratings Symbol Conditions Values Unit VRRM IF AV Tj = 25 °C, IR = 0.5 mA 600 V Ts = 80 °C, Tj = 150 °C 160 A IFSM 10 ms sin 180° 2100 A 150 °C Tj = 25 °C A Tj = 150 °C Tjmax CAL-DIODE Electrical Characteristics Symbol
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Abstract: No abstract text available
Text: User's Guide SNVA614B – January 2012 – Revised January 2014 AN-2205 LM25118 Evaluation Board 1 Introduction The LM25118 Evaluation Board is designed to provide the design engineer with a fully functional, Emulated Current Mode Control, buck-boost power converter to evaluate the LM25118 controller IC. The
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SNVA614B
AN-2205
LM25118
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DIODE 1N4004
Abstract: Schottky diode Die SR 0805 X7R 1N4004 1N5817 HV254 HV254DB1 HV254FG
Text: High Voltage Amplifier Array HV254DB1 Introduction Specifications The Supertex HV254DB1 is a 32-channel 250V amplifier array with a nominal gain of 50V/V. The HV254DB1 provides a means to easily evaluate the Supertex HV254FG device. A high voltage supply, Vpp, and two
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HV254DB1
HV254DB1
32-channel
HV254FG
Vin31
HVout31
HV254FG
DO-41
DIODE 1N4004
Schottky diode Die
SR 0805 X7R
1N4004
1N5817
HV254
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J1 diode
Abstract: 1N4004 1N5817 HV254 HV254DB1 HV254FG capacitor 25v 2010 capacitor chip pads layout
Text: Supertex inc. HV254DB1 High Voltage Amplifier Array Specifications General Description The Supertex HV254DB1 is a 32-channel 250V amplifier array with a nominal gain of 50V/V. The HV254DB1 provides a means to easily evaluate the Supertex HV254FG device.
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HV254DB1
HV254DB1
32-channel
HV254FG
J1 diode
1N4004
1N5817
HV254
capacitor 25v
2010 capacitor chip pads layout
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HV254FG
Abstract: No abstract text available
Text: Supertex inc. HV254DB1 High Voltage Amplifier Array Specifications General Description The Supertex HV254DB1 is a 32-channel 250V amplifier array with a nominal gain of 50V/V. The HV254DB1 provides a means to easily evaluate the Supertex HV254FG device. A high voltage supply, VPP, and two low voltage supplies,
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HV254DB1
32-channel
HV254FG
HV254DB1
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1N4004 Rectifier Diode
Abstract: J1 diode DIODE 1N4004 1N4004 1N5817 HV254 HV254DB1 HV254FG Schottky Rectifier 250V 275V 0.1uF Capacitor
Text: High Voltage Amplifier Array HV254DB1 Introduction Specifications The Supertex HV254DB1 is a 32-channel 250V amplifier array with a nominal gain of 50V/V. The HV254DB1 provides a means to easily evaluate the Supertex HV254FG device. A high voltage supply, Vpp, and two
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HV254DB1
HV254DB1
32-channel
HV254FG
A071404
1N4004 Rectifier Diode
J1 diode
DIODE 1N4004
1N4004
1N5817
HV254
Schottky Rectifier 250V
275V 0.1uF Capacitor
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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SR 0805 X7R capacitor
Abstract: 1uf 500v capacitor CMC-025104KX0805T 0805 1uF 25V 1uF 400V capacitor 10% ELECTRONIC tecate cmc HV256DB1 HV256FG DIODE SCHOTTKY SOD-323
Text: High Voltage Amplifier Array HV256DB1 Introduction Specifications The Supertex HV256DB1 is a 32-Channel 295V amplifier array with a nominal gain of 72V/V. The purpose of the HV256DB1 is to provide a means to easily evaluate the Supertex HV256FG device. A high
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HV256DB1
HV256DB1
32-Channel
HV256FG
A071404
SR 0805 X7R capacitor
1uf 500v capacitor
CMC-025104KX0805T
0805 1uF 25V
1uF 400V capacitor 10% ELECTRONIC
tecate cmc
DIODE SCHOTTKY SOD-323
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SR 0805 X7R capacitor
Abstract: SR 0805 X7R 0805 1uF 25V HV254FG HV256DB1 HV256FG 300V power amplifier Capacitor 25V capacitor-25v 2010 capacitor chip pads layout
Text: Supertex inc. HV256DB1 High Voltage Amplifier Array Specifications General Description The Supertex HV256DB1 is a 32-Channel 295V amplifier array with a nominal gain of 72V/V. The purpose of the HV256DB1 is to provide a means to easily evaluate the Supertex HV256FG device. A high voltage supply, VPP,
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HV256DB1
HV256DB1
32-Channel
HV256FG
SR 0805 X7R capacitor
SR 0805 X7R
0805 1uF 25V
HV254FG
300V power amplifier
Capacitor 25V
capacitor-25v
2010 capacitor chip pads layout
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capacitor 0.1uf 400v
Abstract: HV256DB1 HV256FG SD103CWS CMC-025104KX0805T
Text: High Voltage Amplifier Array HV256DB1 Introduction Specifications The Supertex HV256DB1 is a 32-Channel 295V amplifier array with a nominal gain of 72V/V. The purpose of the HV256DB1 is to provide a means to easily evaluate the Supertex HV256FG device. A high
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HV256DB1
HV256DB1
32-Channel
HV256FG
OD-323
CMC-025104KX0805T
CMC-500103KX0805T
capacitor 0.1uf 400v
SD103CWS
CMC-025104KX0805T
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1uf 500v capacitor
Abstract: tecate cmc HV257FG SD103CWS
Text: High Voltage Sample and Hold Array HV257DB1 Introduction Specifications The Supertex HV257DB1 is a 32-Channel 295V sample and hold amplifier array with a nominal gain of 72V/V. The purpose of the HV257DB1 is to provide a means to easily evaluate the Supertex HV257FG device. A high
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HV257DB1
HV257DB1
32-Channel
HV257FG
OD-323
CMC-025104KX0805T
CMC-500103KX0805T
1uf 500v capacitor
tecate cmc
SD103CWS
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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Untitled
Abstract: No abstract text available
Text: DATA SH EET Preliminary NEC PHOTO DIODE ELECTRON DEVICE PH315 SILICO N EPITAXIAL PLANAR PIN PHOTO DIODE DETECTOR for DAD, VD FEATURES PACKAGE DIMENSIONS (U n it : mm) 1.8 ± 0.2 I 27Û-8 + 0.2 0 .2 5 ( 0 .2 ) • Small clear m old package. • Easy optical alignm ent because o f accurate chip location.
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PH315
1989M
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode SMBD 914 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 914 s5D Q68000-A625 Pin Configuration Package1» SOT-23 1 ho 3 Rd-o o-^ EHA07002 Maximum Ratings Parameter Symbol
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Q68000-A625
OT-23
EHA07002
23StiD5
01EE4c
flE35bQ5
01EE500
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Untitled
Abstract: No abstract text available
Text: G ris SWITCHES These circuits operate from DC to 3 GHz and use GaAs M M IC switches to control the RF signal path. They are available wilh or without TTL or CMOS drivers. They should be used in place of PIN Diode switches when fast switching speed and low DC Power consumption is important.
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TWM6001
N6002
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IR-2205
Abstract: T 2190
Text: Datasheet for Order, LC Order Part Customer Number Number Number Name Laser Components Leadchalkogenide - Diodelaser • •••••••• Ô5-±R3§ÔHV-êÔ! Lasertype : IR-2205. Wavçnumber Region : 22Q5. cm -1. Polarity Special Conditions : IR-2205-GMP.
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IR-2205.
IR-2205-GMP.
398-HV-1-68_
06/Dec/2004
398-HV-1-68
IR-2205
T 2190
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