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    DIODE 20Z Search Results

    DIODE 20Z Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 20Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance


    Original     		PDF BZD27C DO-219AA AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance


    Original     		PDF BZD27C DO-219AA AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002

    bzd27c

    Abstract: diode z62
    Text: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA / M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance


    Original     		PDF BZD27C DO-219AA 2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 JESD22-B102. diode z62

    BZD27C

    Abstract: Z15 marking diode diode Z47 diode z36 cathode bzd27
    Text: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA / M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance


    Original     		PDF BZD27C DO-219AA 2002/95/EC 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 JESD22-B102. Z15 marking diode diode Z47 diode z36 cathode bzd27

    z15 Diode glass

    Abstract: zener diode z33 diode Z27 Zener diode z12 15 Z15 marking diode diode Z47 MARKING CODE 24Z MARKING Z68 24z diode Z68 MARKING
    Text: BZD27C Series 0.8 W Surface Mount Glass Passivated Zener Diode Dimensions in mm. Voltage 11 to 240 V CASE: M1F DO219AA Power 0.8 W R • Silicon planar zener diodes • Low profile surface-mount package • Zener and surge curren specification • Low leakage curren


    Original     		PDF BZD27C DO219AA) C200P z15 Diode glass zener diode z33 diode Z27 Zener diode z12 15 Z15 marking diode diode Z47 MARKING CODE 24Z MARKING Z68 24z diode Z68 MARKING

    Untitled

    Abstract: No abstract text available
    Text: 1SMA4728A – SZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference


    Original     		PDF 1SMA4728A SZ1330A SMA/DO-214AC, MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: SML4728A – SMZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features        Low Profile 1.33mm Max. Case Height 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference


    Original     		PDF SML4728A SMZ1330A OD-123FL OD-123FL, MIL-STD-202,

    temperature based speed control of exhaust fan using triac circuit diagram

    Abstract: "OPTIMUM SNUBBERS FOR POWER SEMICONDUCTORS" simple schematic diagram PWM 40a hydrogen EI - 33c TRANSFORMER EI 33c TRANSFORMER General Electric SCR Manual, Fifth Edition, 1972 rectifiers and zener diodes data NCP1200 CROSS REFERENCE pc smps transistor manual substitution RCA Solid state Linear Integrated Circuits 1970s
    Text: HB214/D Rev. 2, Nov-2001 Rectifier Applications Handbook Rectifier Applications Handbook ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


    Original     		PDF HB214/D Nov-2001 NCP1200 MBRS360T3 MUR160 r14525 HB214/D temperature based speed control of exhaust fan using triac circuit diagram "OPTIMUM SNUBBERS FOR POWER SEMICONDUCTORS" simple schematic diagram PWM 40a hydrogen EI - 33c TRANSFORMER EI 33c TRANSFORMER General Electric SCR Manual, Fifth Edition, 1972 rectifiers and zener diodes data NCP1200 CROSS REFERENCE pc smps transistor manual substitution RCA Solid state Linear Integrated Circuits 1970s

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    IMSA-9617S-04-AGF

    Abstract: IMSA-9632S-08-AGF IMSA9617S IMSA9617 LD-20Z53A5 IMSA-963-7S-33Y902 IMSA-961 IMSA-9632S IMSA-9632 IMSA-9637S-33Y
    Text: No. DATE TECHNICAL LD-20Z53A Dec, 19, 2008 LITERATURE FOR TFT - LCD module MODEL No. ＬＱ０５７Ｑ３ＤＧ０１ These parts have corresponded with the RoHS directive. The technical literature is subject to change without notice. So, please contact Sharp or its representative before designing your product


    Original     		PDF LD-20Z53A LD-20Z53A1 60mm/sec IMSA-9617S-04-AGF IMSA-9632S-08-AGF IMSA9617S IMSA9617 LD-20Z53A5 IMSA-963-7S-33Y902 IMSA-961 IMSA-9632S IMSA-9632 IMSA-9637S-33Y

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    D83-004

    Abstract: CEM-1 20Z D83-004 diode d83 004 d83004 diode D83 004 diode D83 TF484-R1 Fuse 250V 4al Diode D83-004
    Text: V P T- 6 5 0 3 S e r i e s A C / D C O p e n P C B A CUI INC COMPANY 5 " x 3 " x 1 . 5 " , 9 0 ~ 2 6 4 VA C , 6 5 W, T R I P L E O U T P U T .LOW COST, HIGH RELIABILITY .COMPACT SIZE, LIGHT WEIGHT .105ºC OUTPUT CAPACITOR .100% FULL LOAD BURN-IN TEST .INTERNATIONAL AC INPUT RANGE


    Original     		PDF 230VAC time20543hrs D3SB60 TF484-R1 ET-20V TF585 2SK2545 D83-004 1200uf/16V D83-004 CEM-1 20Z D83-004 diode d83 004 d83004 diode D83 004 diode D83 Fuse 250V 4al Diode D83-004

    CEM-1 20Z

    Abstract: LT KBJ406G Fuse 250V 4al 6C3 diode ltkbj406g C259C 2SK2611 100MOhms elna 105 fuse 4al
    Text: V T- 11 5 S e r i e s A C / D C M e t a l E n c l o s e d A CUI INC COMPANY 8 " x 4 " x 2 . 0 " , 8 8 ~ 1 3 2 VA C , 11 5 W, T R I P L E O U T P U T .LOW COST, HIGH RELIABILITY .COMPACT SIZE, LIGHT WEIGHT .105ºC OUTPUT CAPACITOR .100% FULL LOAD BURN-IN TEST


    Original     		PDF 80mVp-p 230VAC CTc31 KBJ406G 4AL/250V TF-349 CEM-1 20Z LT KBJ406G Fuse 250V 4al 6C3 diode ltkbj406g C259C 2SK2611 100MOhms elna 105 fuse 4al

    D1F40

    Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
    Text: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A


    OCR Scan     		PDF 2SA1796 2SC4668 2SC4669 2SK1194 2SK1672 2SK1533 2SK1195 D1F10 D2F10 D1F20 D1F40 S1ZB40 200v 10A mosfet diode 2f DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68

    diode 20D

    Abstract: 5v 10mA reed relay 20D-1A12E1
    Text: DB LECTRO EQMPomsmmomms ELECTRONIC COMPONENTS Miniature Reed Relays 3 A built-in LED type was added to the 20D, 20W, 20Zand 21D series. Since an LED diode is monuted on the relay, there are even more ways to use relays now that they can be used to shorten troubleshooting time.


    OCR Scan     		PDF 20Zand 20D-1AD2E1 20D-1CD2E0 21D-1ED2E0 20O-ino2 21D-1EQ2E0 20D-1A12E1 2-12VDC 3-24VDC diode 20D 5v 10mA reed relay

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    z42n

    Abstract: S1ZB40 Z62N S1wB s s42n BA40 S1ZA40 4D DIODE LVJ DIODE s1wbs
    Text: —K Diode, “ 1Z Type” Case V42N fr, .in Y^'f; Type No. ' . ¡V, 14 jfs. n -i-awfl» Dan* code ^o.ihi 0'6 " :U t „2 .5 jo 2: 4.7 • 0.¿ ; u |.r u 7T-<T C T LÎ2» j & c i [U nit • mm] &C C •S T ypi1 No. Item V rm [V ] S1ZA20 S1ZA40 S1ZA60 S1ZB10


    OCR Scan     		PDF S1ZA20 S1ZA40 S1ZA60 S1ZB10 S1ZB20 S1ZB60 z42n S1ZB40 Z62N S1wB s s42n BA40 S1ZA40 4D DIODE LVJ DIODE s1wbs

    S2HB20

    Abstract: s2hb40z Shindengen Electric Mfg S2HB10 1s922 equivalent 1S1477 1S924 1S94 1S1476 1S1479
    Text: SILICON RECTIFIER DIODE « S h o w s avalanche U n it : mm Fig.9 F ig.12 Fig. IS Type color code polarity mark ^ _T P , Type color code Iplace [S 2R C Z : 2place) / —1 5.5ÍAK W eig ht: 1 ( g ) W e ig h t: 1 . 5 ( g ] Fig. 1 0 M 1 5 X P 1 .5 Fig. 1 3 ^7max


    OCR Scan     		PDF 1S921 1S922 1S923 1S924 1S92S 1S1474* 1S1476* 1S1477* 14783ft 1S1479* S2HB20 s2hb40z Shindengen Electric Mfg S2HB10 1s922 equivalent 1S1477 1S924 1S94 1S1476 1S1479

    Diode 10Z

    Abstract: 4H26 Diode 20Z CNY47A 4N2b h11ag3 OPTEK 4N36 CNY51 B11D3 CNY17
    Text: OPTEK TECHNOLOGY INC DU AL-IN -LINE "fib PACKAGE DEj| bTTñSñD □□□□□ME 7 f i IS O L A T O R S Below listed optoisolators are available in surface mount design. Specify suffix SMA. low profile or SMB (standard profile). P H O T O T R A N S IS T O R


    OCR Scan     		PDF CNY17 CNY47 CNY47A CNY51 H11A2 H11A3 B11A4 Diode 10Z 4H26 Diode 20Z CNY47A 4N2b h11ag3 OPTEK 4N36 CNY51 B11D3

    4N2b

    Abstract: h11ag3 CNY47A CNY51 B11D3 MCT2 surface mount CNY17 CNY47 H11A2 H11A3
    Text: OPTEK TECHNOLOGY INC DU AL-IN -LINE "fib PACKAGE DEj| bTTñSñD □□□□□ME 7 f i IS O L A T O R S Below listed optoisolators are available in surface mount design. Specify suffix SMA. low profile or SMB (standard profile). P H O T O T R A N S IS T O R


    OCR Scan     		PDF CNY17 CNY47 CNY47A CNY51 H11A2 H11A3 B11A4 4N2b h11ag3 CNY47A CNY51 B11D3 MCT2 surface mount CNY47 H11A2 H11A3

    T2D 24 DIODE

    Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
    Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDT455N OT-223 NDT455N OT-223 T2D 24 DIODE T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D

    34B SOT

    Abstract: NDT455N
    Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDT455N NDT455N OT-223 34B SOT

    DIODE 3L2

    Abstract: Complementary MOSFET Half Bridge
    Text: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to


    OCR Scan     		PDF NPS8852H b5D113Q DIODE 3L2 Complementary MOSFET Half Bridge