Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTNS618MC ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A
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ZXTNS618MC
ZX3CDBS1M832
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS718MC ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A
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ZXTPS718MC
ZX3CD2S1M832
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTNS618MC ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A
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ZXTNS618MC
ZX3CDBS1M832
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTPS718MC ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A VR = 40V; VF = 500mV @1A ; IC=1A
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ZXTPS718MC
ZX3CD2S1M832
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A1 dual diode
Abstract: Schottky Diode 40V 5A dual MLP832 ZX3CD2S1M832 ZX3CD2S1M832TA ZX3CD2S1M832TC
Text: ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CD2S1M832
500mV
A1 dual diode
Schottky Diode 40V 5A dual
MLP832
ZX3CD2S1M832
ZX3CD2S1M832TA
ZX3CD2S1M832TC
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Untitled
Abstract: No abstract text available
Text: ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CDBS1M832
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A1 dual diode
Abstract: MLP832 ZX3CD2S1M832 ZX3CD2S1M832TA ZX3CD2S1M832TC
Text: ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CD2S1M832
500mV
A1 dual diode
MLP832
ZX3CD2S1M832
ZX3CD2S1M832TA
ZX3CD2S1M832TC
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A1 dual diode
Abstract: ZX3CDBS1M832 MLP832 ZX3CDBS1M832TA ZX3CDBS1M832TC
Text: ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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Original
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ZX3CDBS1M832
500mV
A1 dual diode
ZX3CDBS1M832
MLP832
ZX3CDBS1M832TA
ZX3CDBS1M832TC
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A1 dual diode
Abstract: ZX3CDBS1M832 MLP832 ZX3CDBS1M832TA ZX3CDBS1M832TC
Text: ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual
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ZX3CDBS1M832
500mV
A1 dual diode
ZX3CDBS1M832
MLP832
ZX3CDBS1M832TA
ZX3CDBS1M832TC
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Untitled
Abstract: No abstract text available
Text: RUR020N02 Nch 20V 2A Power MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).
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RUR020N02
105mW
R1120A
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Untitled
Abstract: No abstract text available
Text: RUF020N02 Datasheet Nch 20V 2.0A Power MOSFET lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 0.8W lFeatures (3) TUMT3 (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3).
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RUF020N02
105mW
R1102A
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Untitled
Abstract: No abstract text available
Text: RUR020N02 Datasheet Nch 20V 2A Power MOSFET lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).
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RUR020N02
105mW
R1120A
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Untitled
Abstract: No abstract text available
Text: RUR020N02 Nch 20V 2A Power MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).
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RUR020N02
105mW
R1120A
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transistor A2
Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual
Text: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A
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ZXTNS618MC
150mV
500mV
DS31933
transistor A2
Marking Y1 SOT26
DFN3020
diodes transistor marking k2 dual
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Untitled
Abstract: No abstract text available
Text: RUF020N02 Nch 20V 2.0A Power MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 0.8W lFeatures (3) TUMT3 (1) (2) lInner circuit 1) Low on - resistance. 2) Built-in G-S Protection Diode. (1) Gate (2) Source (3) Drain 3) Small Surface Mount Package (TUMT3).
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RUF020N02
105mW
R1102A
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transistor A2
Abstract: diodes transistor marking k2 dual DFN3020B-8
Text: A Product Line of Diodes Incorporated ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage -220mV max @ -1A
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ZXTPS718MC
-220mV
500mV
DFN3020B-8
DS31937
transistor A2
diodes transistor marking k2 dual
DFN3020B-8
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage -220mV max @ -1A
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ZXTPS718MC
-220mV
500mV
DFN3020B-8
DS31937
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Untitled
Abstract: No abstract text available
Text: RW1C020UN Datasheet Nch 20V 2A Power MOSFET lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 0.7W lFeatures (6) (5) WEMT6 (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) 1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (WEMT6).
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RW1C020UN
105mW
R1102A
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Untitled
Abstract: No abstract text available
Text: RW1C020UN Nch 20V 2A Power MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 0.7W lFeatures (6) (5) WEMT6 (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) 1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (WEMT6).
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RW1C020UN
105mW
R1102A
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DFN3020B-8
Abstract: ZXTPS718MCTA
Text: A Product Line of Diodes Incorporated ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features Mechanical Data • • • • • • • • • • • • • • • PNP Transistor • VCEO = -20V • RSAT = 64mΩ
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ZXTPS718MC
500mv
-220mV
DFN3020B-8
J-STD-020
DS31937
DFN3020B-8
ZXTPS718MCTA
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DFN3020B-8
Abstract: ZXTN DS3193
Text: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features Mechanical Data • • • • • • • • • • • • • • • PNP Transistor • VCEO = 20V • RSAT = 47mΩ
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ZXTNS618MC
500mv
150mV
DFN3020B-8
J-STD-020
DS31933
DFN3020B-8
ZXTN
DS3193
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ 66* THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product LESHAN RADIO COMPANY, LTD. Package outline Features Switching diode Switching diode • SOD - 723 SOD-123H .013 0.32 .009(0.25)
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OD-123+
FM120-M
FM1200-M+
OD-123H
M180-MH
FM1100-MH
FM1150-MH
FM1200-MH
FM120-MH
FM130-MH
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a1952
Abstract: No abstract text available
Text: Ordering number : ENA1952A MCH3476 N-Channel Power MOSFET http://onsemi.com 20V, 2A, 125mΩ, Single MCPH3 Features • • • 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage
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ENA1952A
MCH3476
PW10s,
900mm2
A1952-7/7
a1952
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Untitled
Abstract: No abstract text available
Text: International Iö R Rectifier PD - 9.1648A IRF7524D1 PRELIMINARY FETKY M OSFET & Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint V dss = -20V R d s o h
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OCR Scan
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PDF
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IRF7524D1
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