MGV12N120D
Abstract: PD123 tme 126
Text: MOTOROLA Order this document by MGV12N120D/D SEMICONDUCTOR TECHNICAL DATA e Product Preview Data Sheet MGVI2NI 20D Insulated Gate Bipolar mansistor with Anti-ParaMUei Diode N<hannel I Enhancement Mode Silicon Gate IGBT & DIODE IN D3~# 12A @ 90:$.&~;es 20 ~ @ 2$~.<:j, ~~~
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MGV12N120D/D
M2-26629296
2PHXM7154
MGV12N120D
PD123
tme 126
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UM9441 UM9442
Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9441 UM9442
UMM5050
NKT 0039
HUM4020
NTE Semiconductor Technical Guide and Cross Refer
wireless mobile charging through microwaves
MSC 9415
hf power combiner broadband transformers
mpd101
Structure rotary phase shifter
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UM9442
Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9442
UMM5050
MSC 9415
pin diodes radiation detector
MSC 501 302 diode
PIN DIODE DRIVER CIRCUITS
"Microwave Diode"
UM9441
Microwave PIN diode
hf power combiner broadband transformers
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PI-810
Abstract: 3530MHz PI-820 MCE 2000
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-810
PI-820
PI-810
3530MHz
MCE 2000
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OL6109L-5A
Abstract: LD25C OL6109L-5B dfb laser diode 1490 nm
Text: JOG-00978 OKI Electronics Components Preliminary OLx109L-5 Series Rev.1 [May 2002 ] 5mW Laser Diode Butterfly Modules with Single Mode Fiber, Built in Cooler, Isolator. 1. DESCRIPTION OLx109L-5 Series are Laser Diode in Butterfly package with SMF. 2. FEATURES
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JOG-00978
OLx109L-5
OL6109L-5A
LD25C
OL6109L-5B
dfb laser diode 1490 nm
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7297
Abstract: CHE1270
Text: CHE1270 RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC Description The CHE1270 is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref). DC CHE1270 RF_in
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CHE1270
12-40GHz
CHE1270
12-40GHz
DSCHE1270-7297
7297
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PI-820
Abstract: No abstract text available
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-820 800–2000 MHz FEATURES • PCS Frequency Coverage: 800-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-820
PI-820
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-820 800–2000 MHz FEATURES • PCS Frequency Coverage: 800-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-820
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PI-810
Abstract: No abstract text available
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-820
PI-810
PI-810
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PD 1515
Abstract: oki optical
Text: JOG-00978 OKI Electronics Components Preliminary OLx109L-5 Series Rev.2 [May 2003 ] 5mW Laser Diode Butterfly Modules with Single Mode Fiber, Built in Cooler, Isolator. 1. DESCRIPTION OLx109L-5 Series are Laser Diode in Butterfly package with SMF. 2. FEATURES
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JOG-00978
OLx109L-5
D-41460
PD 1515
oki optical
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PI-810
Abstract: 501V PI-820
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-810
PI-820
PI-810
501V
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PI-820
Abstract: No abstract text available
Text: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-820 800–2000 MHz FEATURES • PCS Frequency Coverage: 800-2000 MHz • Balanced 4 Diode Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-820
PI-820
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Untitled
Abstract: No abstract text available
Text: ODLOLx109L-5-01 Electronics Components OLx109L-5 Series Issue Date: May 2002 Preliminary 5mW Laser Diode Butterfly Modules with Single Mode Fiber, Built in Cooler, Isolator. 1. DESCRIPTION OLx109L-5 Series are Laser Diode in Butterfly package with SMF. 2. FEATURES
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OLx109L-5
ODLOLx109L-5-01
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10mW
Abstract: No abstract text available
Text: JOG-00980 OKI Electronics Components Preliminary OLx109L-10 Series Rev. 3 [Jan. 2005] 10mW Laser Diode Butterfly Modules with Single Mode Fiber, Built in Cooler, Isolator. 1. DESCRIPTION OLx109L-10 Series are Laser Diode in Butterfly package with SMF. 2. FEATURES
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JOG-00980
OLx109L-10
D-41460
10mW
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NEC LASER DIODE butterfly package
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ NEC LASER DIODE MODULE NDL7540P 1480 nm OPTICAL FIBER APPLICATIONS InGaAsP MQW-DFB LASER DIODE MODULE FEATURES • InGaAsP Strained M Q W DC-PBH laser diode • H igh output power Pf=110mW @ !F=500m A CW • Internal optical isolator, therm o electric cooler and m onitor photo diode
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NDL7540P
110mW
500mA
-20dB)
10log
100mW
500mA
NEC LASER DIODE butterfly package
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Untitled
Abstract: No abstract text available
Text: Nov. 1995 Surface Mountable Single-Mode LD Module QD-8305 Description NEC's new surface-mount, low-cost laser diode module is designed for use in fiber optic communications applications such as ATM, FITL and SONET. The laser diode module consists o f a laser diode and a monitor photo diode. This module can be used with a
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QD-8305)
-20dB)
OD8305
OD-8305
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QD-8306
Abstract: UJ45
Text: Nov. 1995 Surface Mountable Single-Mode LD Module QD-8306 D escription NEC's new surface-mount, low-cost laser diode module is designed for use in fiber optic communications applications such as ATM, FITL and SONET. The laser diode module consists o f a laser diode and a monitor photo diode. This module can be used with a
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QD-8306)
-20dB)
OD-8306
QD-8306
UJ45
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UM9701
Abstract: No abstract text available
Text: UM9701 PIN DIODE Low Resistance, Low Distortion, RF Switching Diode Features Description • • • • • • The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design
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UM9701
UM9701
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Untitled
Abstract: No abstract text available
Text: UM9701 PIN DIODE Low Resistance, Low Distortion, RF Switching Diode Features Description • • • • • • The UM9701 PIN diode was designed for low resistance at low forward bias current and low reverse bias capacitance. This unique Microsemi design
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UM9701
UM9701
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ LASER DIODE NDL7401P Series 1310 nm InGaAsP MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLEMODE FIBER DESCRIPTION N D L 7401P Series are 131 Onm laser diode coaxial modules with singlemode f ib e r . They have a Multiple Quantum
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NDL7401P
7401P
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tunnel diode
Abstract: No abstract text available
Text: LIMITER TUNNEL DIODE DETECTORS ML 7718-0000 SERIES DESCRIPTION T his series o f lim iter-detectors offers sim ilar performance advantages to the standard tunnel diode detectors but with extended RF input power range. A silicon PIN diode is integrated at the input o f the device to provide passive
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30dBm
17dBm
-20dBm
tunnel diode
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L5070
Abstract: LS061 L7s00 dl7550
Text: DATA SHEET NEC LASER DIODE MODULE N D L7550P ELECTRON DEVICE 1 5 5 0 nm InGaAsP MQW-DC-PBH-PULSED LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER D ESC R IPTIO N N DL7550P is a 1 550 nm pulsed laser diode, that has a newly developed Multi-Quantum Well MQW structure, D IP module
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L7550P
DL7550P
LS061
L5765P1
L5070
L5071
L5775P1
L7s00
dl7550
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MCE 2000
Abstract: No abstract text available
Text: SURFACE MOUNT PIN DIODE ATTENUATOR MODEL PI-810 150-2000 MHz FEATURES: • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode ir Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-820
PI-810
24dBm
MCE 2000
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ceramic attenuator MHz
Abstract: No abstract text available
Text: SURFACE MOUNT-CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150-2000 MHz FEATURES ‘ PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode tt Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics
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PI-820
PI-810
L50dB
ceramic attenuator MHz
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