Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2196 NGTB20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V TO-3PF-3L with Low VF Switching Diode Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Diode VF=1.5V typ. (IF=20A) • Diode trr=70ns typ.
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ENA2196
NGTB20N60L2TF1G
A2196-8/8
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RG 2006 10A 600V
Abstract: No abstract text available
Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60D
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
STF20NM60D
O-220FP
RG 2006 10A 600V
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W20NM60
Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
Text: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60FD
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
O-247
W20NM60
w20nm60fd
P20NM60FD
p20nm60
p20nm60f
mosfet 600V 100A ST
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w20nm60
Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60D
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
STF20NM60D
O-220FP
w20nm60
w20nm60fd
P20NM60FD
F20NM60D
STP20NM60FD
STW20NM60FD
p20nm60
mosfet 600V 100A ST
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Diode 600v 20a
Abstract: 8037 20A jantx diodes
Text: SML20SIC06C MECHANICAL DATA SILICON CARBIDE SCHOTTKY DIODE 600V 20A Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) VR (max) 600V VF (typ) 1.5V IF (max) 20A 20.07 (0.790) 20.32 (0.800) 30.35 (1.195)
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SML20SIC06C
Diode 600v 20a
8037
20A jantx diodes
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Untitled
Abstract: No abstract text available
Text: SML20SIC06C MECHANICAL DATA SILICON CARBIDE SCHOTTKY DIODE 600V 20A Dimensions in mm inches 6.32 (0.249) 6.60 (0.260) 13.59 (0.535) 13.84 (0.545) 1.02 (0.040) 1.27 (0.050) VR (max) 600V VF (typ) 1.5V IF (max) 20A 20.07 (0.790) 20.32 (0.800) 30.35 (1.195)
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SML20SIC06C
reliab10A
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Untitled
Abstract: No abstract text available
Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C
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AP20GT60SW
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A
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RJS6004WDPK
R07DS0897EJ0200
PRSS0004ZE-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A
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RJS6004WDPK
R07DS0897EJ0100
PRSS0004ZE-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A
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RJS6004WDPK
R07DS0897EJ0300
PRSS0004ZE-A
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Untitled
Abstract: No abstract text available
Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A Built-in Fast Recovery Diode VCES 600V IC 20A C C G E E Absolute Maximum Ratings
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AP20GT60SW
-55tor-Emitter
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Untitled
Abstract: No abstract text available
Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage V CE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C
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AP20GT60SW
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PRSS0003ZE-A
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A
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RJS6004WDPQ-E0
R07DS0898EJ0101
PRSS0003ZE-A
O-247)
PRSS0003ZE-A
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silicon carbide diode
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A
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RJS6004WDPQ-E0
R07DS0898EJ0100
PRSS0003ZE-A
O-247)
silicon carbide diode
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APT30DS60B
Abstract: APT30DS60S APT6017BLL 400v high speed diode
Text: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT30DS60B
APT30DS60S
O-247
APT6017BLL
400v high speed diode
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Untitled
Abstract: No abstract text available
Text: 2 1 TO -24 7 1 - Cathode 2 2 - Anode 1 D3PAK 1 2 1 APT30DS60B 600V APT30DS60S 600V 20A 20A 2 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT30DS60B
APT30DS60S
O-247
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Untitled
Abstract: No abstract text available
Text: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT30DS60B
APT30DS60S
O-247
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S20VTA60
Abstract: No abstract text available
Text: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S20VTA60 CaseCase : 2F: SVTA Unit : mm 600V 20A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION
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S20VTA60
S20VTAx
S20VTA60
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A1845
Abstract: n3011 ud2006 a18452
Text: UD2006FR Ordering number : ENA1845A SANYO Semiconductors DATA SHEET UD2006FR Diffused Junction Silicon Diode Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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ENA1845A
UD2006FR
A1845-3/3
A1845
n3011
ud2006
a18452
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A1846
Abstract: No abstract text available
Text: UD2006LS-SB Ordering number : ENA1846 SANYO Semiconductors DATA SHEET UD2006LS-SB Diffused Junction Silicon Diode Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1846
UD2006LS-SB
A1846-3/3
A1846
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Untitled
Abstract: No abstract text available
Text: UD2006LS-SB Ordering number : ENA1846 SANYO Semiconductors DATA SHEET UD2006LS-SB Diffused Junction Silicon Diode Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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UD2006LS-SB
ENA1846
A1846-3/3
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Untitled
Abstract: No abstract text available
Text: UD2006FR Ordering number : ENA1845A SANYO Semiconductors DATA SHEET Diffused Junction Silicon Diode UD2006FR Low VF Switching Diode Features • • • VF=1.4V max. IF=20A VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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UD2006FR
ENA1845A
A1845-3/3
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SC-93 JEDEC
Abstract: No abstract text available
Text: RD2006RH-SB Ordering number : EN9054 SANYO Semiconductors DATA SHEET RD2006RH-SB Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • VRRM=600V VF=1.75V max. IF=20A trr=21ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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EN9054
RD2006RH-SB
SC-93 JEDEC
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svt power inverter
Abstract: S20VT60 high Forward Voltage Diode
Text: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S20VT60 CaseCase : 2F: SVT Unit : mm 600V 20A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION ●Big Power Supply
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S20VT60
S20VTx
svt power inverter
S20VT60
high Forward Voltage Diode
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