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    DIODE 20A 300V Search Results

    DIODE 20A 300V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 20A 300V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2196 NGTB20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V TO-3PF-3L with Low VF Switching Diode Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Diode VF=1.5V typ. (IF=20A) • Diode trr=70ns typ.


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    PDF ENA2196 NGTB20N60L2TF1G A2196-8/8

    RG 2006 10A 600V

    Abstract: No abstract text available
    Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


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    PDF STF20NM60D STP20NM60FD STW20NM60FD O-220 O-220FP O-247 STF20NM60D O-220FP RG 2006 10A 600V

    W20NM60

    Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
    Text: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


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    PDF STF20NM60FD STP20NM60FD STW20NM60FD O-220 O-220FP O-247 O-247 W20NM60 w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST

    w20nm60

    Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
    Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


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    PDF STF20NM60D STP20NM60FD STW20NM60FD O-220 O-220FP O-247 STF20NM60D O-220FP w20nm60 w20nm60fd P20NM60FD F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST

    APT30DS60B

    Abstract: APT30DS60S APT6017BLL 400v high speed diode
    Text: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times


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    PDF APT30DS60B APT30DS60S O-247 APT6017BLL 400v high speed diode

    Untitled

    Abstract: No abstract text available
    Text: 2 1 TO -24 7 1 - Cathode 2 2 - Anode 1 D3PAK 1 2 1 APT30DS60B 600V APT30DS60S 600V 20A 20A 2 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times


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    PDF APT30DS60B APT30DS60S O-247

    Untitled

    Abstract: No abstract text available
    Text: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times


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    PDF APT30DS60B APT30DS60S O-247

    Untitled

    Abstract: No abstract text available
    Text: 20A (300V / 20A ) Low loss fast recovery diode Outline drawings, mm 0.1 9.0±0.2 7.0±0.2 Major characteristics 4 0.6±0.2 MS906C3 A 2 1.0±0.2 Features 1.0±0.2 Applications (5.8) 3 3.6±0.2 0.4±0.1 1 (10.1) 2.5 1.5 (2.2) (2.1) 2.0 2.0 Low VF Low height : 2.8mm


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    PDF MS906C3 MS906C3

    G20N50c

    Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
    Text: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


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    PDF HGTG20N50C1D O-247 500ns 150oC. G20N50c g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254

    RD2003

    Abstract: RD2003JS-SB A1904 ENA1904 RD2003 LS diode cathode marking 7
    Text: RD2003JS-SB Ordering number : ENA1904 SANYO Semiconductors DATA SHEET RD2003JS-SB Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • VF=1.3V max. IF=20A VRRM=300V trr=20ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF ENA1904 RD2003JS-SB PW100s, A1904-3/3 RD2003 RD2003JS-SB A1904 ENA1904 RD2003 LS diode cathode marking 7

    RD2003

    Abstract: RD2003 LS
    Text: RD2003JS-SB Ordering number : ENA1904 SANYO Semiconductors DATA SHEET Diffused Junction Silicon Diode RD2003JS-SB Ultrahigh-Speed Switching Diode Features • • • VF=1.3V max. IF=20A VRRM=300V trr=20ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF RD2003JS-SB ENA1904 A1904-3/3 RD2003 RD2003 LS

    G20N50c

    Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
    Text: HGTG20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE


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    PDF HGTG20N50C1D O-247 500ns 150oC. AN7254 AN7260) 150oC 100oC G20N50c g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt

    BCS028N06NS

    Abstract: 028N06NS DC1502
    Text: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a


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    PDF DC1502A LTC4359HDCB 2V/20A LTC4359 dc1502af BCS028N06NS 028N06NS DC1502

    ultrafast diode 10a 300v

    Abstract: F20UP30DN diode 300v 20a power Diode 300V 10A DUAL DI
    Text: 2006 FFB20UP30DN tm Features 20A, 300V, Ultrafast Dual Diode • Ultrafast Recovery, Trr = 45 ns @ IF = 10 A • Max Forward Voltage, VF = 1.3 V (@ TC = 25°C) The FFB20UP30DN is an Ultrafast Diode with low forward voltage drop and rugged UIS capability. This device is intended


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    PDF FFB20UP30DN FFB20UP30DN O-263AB/D2-PAK ultrafast diode 10a 300v F20UP30DN diode 300v 20a power Diode 300V 10A DUAL DI

    20DL2CZ47A

    Abstract: 20FL2CZ47A 20fl2cz 20DL2C47A 20DL2CZ47A(F)
    Text: 20DL2CZ47A,20FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ47A,20FL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 200, 300V Average Output Rectified Current : IO = 20A


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    PDF 20DL2CZ47A 20FL2CZ47A 20DL2CZ47A 20FL2CZ47A 20fl2cz 20DL2C47A 20DL2CZ47A(F)

    20FL2CZ

    Abstract: 20DL2CZ51A 20FL2CZ51A
    Text: 20DL2CZ51A,20FL2CZ51A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ51A,20FL2CZ51A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 200, 300V Average Output Rectified Current : IO = 20A


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    PDF 20DL2CZ51A 20FL2CZ51A 20DL2CZ51A 20FL2CZ 20FL2CZ51A

    Untitled

    Abstract: No abstract text available
    Text: 20DL2CZ47A,20FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ47A,20FL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 200, 300V l Average Output Rectified Current : IO = 20A


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    PDF 20DL2CZ47A 20FL2CZ47A 20DL2CZ47A

    Untitled

    Abstract: No abstract text available
    Text: 20DL2CZ51A,20FL2CZ51A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ51A,20FL2CZ51A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 200, 300V l Average Output Rectified Current : IO = 20A


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    PDF 20DL2CZ51A 20FL2CZ51A 20DL2CZ51A

    CC2403020N

    Abstract: CC2403500N CC2406020N CC2406500N CN2403500N CN2406500N
    Text: Powerex Superfast Recovery Dual Diode Modules 7/3/2003 50A 20A Ic A *click on the products for additional information 300V 600V CC2403020N CC2406020N Voltage Circuit Config CC2403500N CN2403500N CC2406500N CN2406500N Super Fast Common Anode Super Fast Common Cathode


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    PDF CC2403020N CC2406020N CC2403500N CN2403500N CC2406500N CN2406500N CC2403020N CC2403500N CC2406020N CC2406500N CN2403500N CN2406500N

    D 16027 G

    Abstract: No abstract text available
    Text: CSD20030 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=300V IF=20A Features Benefits _ • 300 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery


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    PDF CSD20030 CSD20030D CSD20030, D 16027 G

    PJ 969 diode

    Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
    Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode


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    PDF 500ns HGTG20N50C1D O-247 AN7254 AN7260) PJ 969 diode G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE FK20VS-6 • V dss . 300V • ros O N (M AX ) . 0.33Q • ID . 20A • Integrated Fast Recovery Diode (M A X .)


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    PDF FK20VS-6 150ns

    s20lc30

    Abstract: s20lc30 diode DIODE marking ED marking ed diode marking sb diode diode marking 2D
    Text: Super Fast Recovery Diode Twin Diode OUTLINE Package I MTO-3P S20LC30 Unit : mm Weight 6.1g Typ> 300V 20A 4 Feature I • 6 jcfiVJ'il' • Low Noise • tnr=30ns • Small 0 jc • ^ 5 1 . OA • iS<S • Switching Regulator • Home Appliance, Office Automation


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    PDF S20LC30 S20LC30 S2QLC30 CJ533-1 s20lc30 diode DIODE marking ED marking ed diode marking sb diode diode marking 2D

    Untitled

    Abstract: No abstract text available
    Text: Super Fast Recovery Diode Twin Diode OUTLINE SF20LC30SM 300V 20A Feature • s v -rx • Low Noise • trr=25ns • tnr=25ns • * g ïü 8 Œ 2kV SII • Full Molded • Dielectric Strength 2kV • S (S • Switching Regulator • Home Appliance, Office Automation


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    PDF SF20LC30SM SF20LC30SM J533-1)