Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2196 NGTB20N60L2TF1G N-Channel IGBT http://onsemi.com 600V, 20A, VCE sat ;1.45V TO-3PF-3L with Low VF Switching Diode Features • IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V) • IGBT tf=67ns typ. • Diode VF=1.5V typ. (IF=20A) • Diode trr=70ns typ.
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ENA2196
NGTB20N60L2TF1G
A2196-8/8
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RG 2006 10A 600V
Abstract: No abstract text available
Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60D
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
STF20NM60D
O-220FP
RG 2006 10A 600V
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W20NM60
Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
Text: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60FD
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
O-247
W20NM60
w20nm60fd
P20NM60FD
p20nm60
p20nm60f
mosfet 600V 100A ST
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w20nm60
Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60D
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
STF20NM60D
O-220FP
w20nm60
w20nm60fd
P20NM60FD
F20NM60D
STP20NM60FD
STW20NM60FD
p20nm60
mosfet 600V 100A ST
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APT30DS60B
Abstract: APT30DS60S APT6017BLL 400v high speed diode
Text: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT30DS60B
APT30DS60S
O-247
APT6017BLL
400v high speed diode
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Untitled
Abstract: No abstract text available
Text: 2 1 TO -24 7 1 - Cathode 2 2 - Anode 1 D3PAK 1 2 1 APT30DS60B 600V APT30DS60S 600V 20A 20A 2 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT30DS60B
APT30DS60S
O-247
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Untitled
Abstract: No abstract text available
Text: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT30DS60B
APT30DS60S
O-247
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Untitled
Abstract: No abstract text available
Text: 20A (300V / 20A ) Low loss fast recovery diode Outline drawings, mm 0.1 9.0±0.2 7.0±0.2 Major characteristics 4 0.6±0.2 MS906C3 A 2 1.0±0.2 Features 1.0±0.2 Applications (5.8) 3 3.6±0.2 0.4±0.1 1 (10.1) 2.5 1.5 (2.2) (2.1) 2.0 2.0 Low VF Low height : 2.8mm
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MS906C3
MS906C3
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G20N50c
Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
Text: HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance
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HGTG20N50C1D
O-247
500ns
150oC.
G20N50c
g20n50c1d
g20n50
g20N50c1
HGTG20N50
HGTG20N50C1D
20A igbt
IGBT Drivers Transistors
ACT10
AN7254
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RD2003
Abstract: RD2003JS-SB A1904 ENA1904 RD2003 LS diode cathode marking 7
Text: RD2003JS-SB Ordering number : ENA1904 SANYO Semiconductors DATA SHEET RD2003JS-SB Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • VF=1.3V max. IF=20A VRRM=300V trr=20ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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ENA1904
RD2003JS-SB
PW100s,
A1904-3/3
RD2003
RD2003JS-SB
A1904
ENA1904
RD2003 LS
diode cathode marking 7
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RD2003
Abstract: RD2003 LS
Text: RD2003JS-SB Ordering number : ENA1904 SANYO Semiconductors DATA SHEET Diffused Junction Silicon Diode RD2003JS-SB Ultrahigh-Speed Switching Diode Features • • • VF=1.3V max. IF=20A VRRM=300V trr=20ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C
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RD2003JS-SB
ENA1904
A1904-3/3
RD2003
RD2003 LS
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G20N50c
Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
Text: HGTG20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE
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HGTG20N50C1D
O-247
500ns
150oC.
AN7254
AN7260)
150oC
100oC
G20N50c
g20n50c1d
mosfet 20a 300v
g20n50
ic tb 810 datasheet
HGTG20N50C1D
g20N50c1
HGTG20N50
20A igbt
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BCS028N06NS
Abstract: 028N06NS DC1502
Text: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a
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DC1502A
LTC4359HDCB
2V/20A
LTC4359
dc1502af
BCS028N06NS
028N06NS
DC1502
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ultrafast diode 10a 300v
Abstract: F20UP30DN diode 300v 20a power Diode 300V 10A DUAL DI
Text: 2006 FFB20UP30DN tm Features 20A, 300V, Ultrafast Dual Diode • Ultrafast Recovery, Trr = 45 ns @ IF = 10 A • Max Forward Voltage, VF = 1.3 V (@ TC = 25°C) The FFB20UP30DN is an Ultrafast Diode with low forward voltage drop and rugged UIS capability. This device is intended
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FFB20UP30DN
FFB20UP30DN
O-263AB/D2-PAK
ultrafast diode 10a 300v
F20UP30DN
diode 300v 20a
power Diode 300V 10A
DUAL DI
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20DL2CZ47A
Abstract: 20FL2CZ47A 20fl2cz 20DL2C47A 20DL2CZ47A(F)
Text: 20DL2CZ47A,20FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ47A,20FL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 200, 300V Average Output Rectified Current : IO = 20A
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20DL2CZ47A
20FL2CZ47A
20DL2CZ47A
20FL2CZ47A
20fl2cz
20DL2C47A
20DL2CZ47A(F)
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20FL2CZ
Abstract: 20DL2CZ51A 20FL2CZ51A
Text: 20DL2CZ51A,20FL2CZ51A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ51A,20FL2CZ51A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 200, 300V Average Output Rectified Current : IO = 20A
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20DL2CZ51A
20FL2CZ51A
20DL2CZ51A
20FL2CZ
20FL2CZ51A
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Untitled
Abstract: No abstract text available
Text: 20DL2CZ47A,20FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ47A,20FL2CZ47A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 200, 300V l Average Output Rectified Current : IO = 20A
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20DL2CZ47A
20FL2CZ47A
20DL2CZ47A
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Untitled
Abstract: No abstract text available
Text: 20DL2CZ51A,20FL2CZ51A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2CZ51A,20FL2CZ51A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 200, 300V l Average Output Rectified Current : IO = 20A
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20DL2CZ51A
20FL2CZ51A
20DL2CZ51A
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CC2403020N
Abstract: CC2403500N CC2406020N CC2406500N CN2403500N CN2406500N
Text: Powerex Superfast Recovery Dual Diode Modules 7/3/2003 50A 20A Ic A *click on the products for additional information 300V 600V CC2403020N CC2406020N Voltage Circuit Config CC2403500N CN2403500N CC2406500N CN2406500N Super Fast Common Anode Super Fast Common Cathode
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CC2403020N
CC2406020N
CC2403500N
CN2403500N
CC2406500N
CN2406500N
CC2403020N
CC2403500N
CC2406020N
CC2406500N
CN2403500N
CN2406500N
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D 16027 G
Abstract: No abstract text available
Text: CSD20030 Silicon Carbide Schottky Diode ZERO RECOVERY RECTIFIER VRRM=300V IF=20A Features Benefits _ • 300 Volt Schottky Rectifier • Replace Bipolar with Unipolar Rectifiers • Zero Reverse Recovery • Essentially No Switching Losses • Zero Forward Recovery
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CSD20030
CSD20030D
CSD20030,
D 16027 G
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PJ 969 diode
Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode
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500ns
HGTG20N50C1D
O-247
AN7254
AN7260)
PJ 969 diode
G20N50c
20N50C1D
pj 986 diode
F25 transistor
mosfet 20n
GE 639
pj 809
IGBT 500V 35A
igbt 20A 500V
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FK20VS-6 HIGH-SPEED SWITCHING USE FK20VS-6 • V dss . 300V • ros O N (M AX ) . 0.33Q • ID . 20A • Integrated Fast Recovery Diode (M A X .)
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OCR Scan
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FK20VS-6
150ns
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PDF
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s20lc30
Abstract: s20lc30 diode DIODE marking ED marking ed diode marking sb diode diode marking 2D
Text: Super Fast Recovery Diode Twin Diode OUTLINE Package I MTO-3P S20LC30 Unit : mm Weight 6.1g Typ> 300V 20A 4 Feature I • 6 jcfiVJ'il' • Low Noise • tnr=30ns • Small 0 jc • ^ 5 1 . OA • iS<S • Switching Regulator • Home Appliance, Office Automation
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OCR Scan
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S20LC30
S20LC30
S2QLC30
CJ533-1
s20lc30 diode
DIODE marking ED
marking ed diode
marking sb diode
diode marking 2D
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PDF
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode OUTLINE SF20LC30SM 300V 20A Feature • s v -rx • Low Noise • trr=25ns • tnr=25ns • * g ïü 8 Œ 2kV SII • Full Molded • Dielectric Strength 2kV • S (S • Switching Regulator • Home Appliance, Office Automation
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OCR Scan
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SF20LC30SM
SF20LC30SM
J533-1)
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