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    DIODE 200 1W Search Results

    DIODE 200 1W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 200 1W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1Z51

    Abstract: No abstract text available
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 s


    Original     		PDF 1Z390 1Z30A 1Z51

    1Z10

    Abstract: 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A 1Z390
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 µs


    Original     		PDF 1Z390 1Z30A 1Z390, DO-15 SC-39 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A

    1Z10

    Abstract: 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A 1Z390
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 s


    Original     		PDF 1Z390 1Z30A 1Z390, DO-15 SC-39 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A

    1Z12

    Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12A 1Z13 1Z30 1Z30A 1Z390
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation :P=1W Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 µs : VZ = 6.2 V ~ 390 V


    Original     		PDF 1Z390 1Z30A 1Z390, DO-15 SC-39 1Z12 1Z10 1Z10A 1Z11 1Z11A 1Z12A 1Z13 1Z30 1Z30A

    1Z16

    Abstract: 1Z47 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs Zener Voltage


    Original     		PDF 1Z390 1Z30A DO-15 SC-39 1Z16 1Z47 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A

    1z390

    Abstract: No abstract text available
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs Zener Voltage


    Original     		PDF 1Z390 1Z30A DO-15 SC-39 961001EAA2 1Z100 1Z110 1Z150

    1Z150

    Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A 1Z390
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS l Average Power Dissipation : P = 1W l Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs


    Original     		PDF 1Z390 1Z30A DO-15 SC-39 1Z150 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A

    1N4757A

    Abstract: 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A
    Text: RECTRON 1N4728A THRU 1N4757A SEMICONDUCTOR TECHNICAL SPECIFICATION 1W 5% DO-41 ZENER DIODE Absolute Maximun Ratings Ta=25oC Items Power Dissipation Power Derating (above 50 oC) Forward Voltage @If = 200 mA Vz Tolerence Junction Temp. Storage Temp. Dimensions


    Original     		PDF 1N4728A 1N4757A DO-41 DO-41 1N4748A 1N4749A 1N4750A 1N4751A 1N4752A 1N4753A 1N4757A 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A

    Untitled

    Abstract: No abstract text available
    Text: RECTRON 1N4728B THRU 1N4757B SEMICONDUCTOR TECHNICAL SPECIFICATION 1W 5% DO-41 ZENER DIODE Absolute Maximun Ratings Ta=25oC Items Power Dissipation Power Derating (above 50 oC) Forward Voltage @If = 200 mA Vz Tolerence Junction Temp. Storage Temp. Dimensions


    Original     		PDF 1N4728B 1N4757B DO-41 DO-41 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A

    Untitled

    Abstract: No abstract text available
    Text: 1SMA4741-200Z Surface-mount Silicon Zener Diode Voltage range 11-200 Volts 1W Peak Power SMA/DO-214AC FEATURES For surface-mount applications in order to optimize board space Low-profile package Built-in strain relief Glass-passivated junction Low inductance


    Original     		PDF 1SMA4741-200Z SMA/DO-214AC

    1N4742A JEDEC

    Abstract: 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A Z1200A
    Text: 1N4728A THRU Z1200A 1W EPITAXIAL ZENER DIODE FEATURES DO-41 • Complete voltage range 3.3 to 200 Volts • High peak reverse power dissipation • High reliability • Low leakage current 1.00 25.4 MIN. 0.108 (2.74) 0.078 (1.99) MECHANICAL DATA 0.205 (5.20)


    Original     		PDF 1N4728A Z1200A DO-41 DO-41 UL94V-O MIL-STD-202, Z1120A Z1130A Z1150A Z1160A 1N4742A JEDEC 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A Z1200A

    ZENER DIODE 2.7V 1W

    Abstract: 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A 1N4746A 1N4741A-1M200Z
    Text: 1N4741A-1M200Z Glass-Passivated Junction Silicon Zener Diode Voltage range 11-200 Volts 1W Peak Power DO-41 FEATURES Low profile package Built-in strain relief Glass-passivated juction Low inductance Typical IR less than 5.0uA above 11V High temperature soldering guaranteed:


    Original     		PDF 1N4741A-1M200Z DO-41 ZENER DIODE 2.7V 1W 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A 1N4746A 1N4741A-1M200Z

    transistor p2w

    Abstract: 80TP40 STTH2R02-Y STTH2R02 STTH2R02UY
    Text: STTH2R02-Y Automotive ultrafast recovery diode Features • very low conduction losses ■ negligible switching losses ■ low forward and reverse recovery times ■ high junction temperature ■ AEC-Q101 qualified A K A Description K The STTH2R02 uses ST's new 200 V planar Pt


    Original     		PDF STTH2R02-Y AEC-Q101 STTH2R02 STTH2R02UY transistor p2w 80TP40 STTH2R02-Y STTH2R02UY

    do-201 footprint

    Abstract: be st smb STTH4R02 STTH4R02B STTH4R02D STTH4R02FP STTH4R02S STTH4R02U
    Text: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt


    Original     		PDF STTH4R02 O-220AC STTH4R02D STTH4R02 O-220FPAC STTH4R02FP O-220AC, O-220FPAC, DO-201AB, STTH4R02B do-201 footprint be st smb STTH4R02B STTH4R02D STTH4R02FP STTH4R02S STTH4R02U

    do-201 footprint

    Abstract: STTH4R02 STTH4R02B STTH4R02D STTH4R02FP STTH4R02S STTH4R02U transistor p2w 4r2s
    Text: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt


    Original     		PDF STTH4R02 O-220AC STTH4R02D STTH4R02 O-220FPAC STTH4R02FP O-220AC, O-220FPAC, DO-201AB, STTH4R02B do-201 footprint STTH4R02B STTH4R02D STTH4R02FP STTH4R02S STTH4R02U transistor p2w 4r2s

    SMC/DOC-0000181564

    Abstract: No abstract text available
    Text: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt


    Original     		PDF STTH4R02 O-220AC STTH4R02D STTH4R02 O-220FPAC STTH4R02FP O-220AC, O-220FPAC, DO-201AB, STTH4R02B SMC/DOC-0000181564

    808nm 1W laser diode

    Abstract: 808nm 1W 808nm W0808 PCW-CS-200-W0808 808nm VCSEL Laser diode laser 808nm 200mW laser diode 200mw
    Text: 200mW Multi-Mode 808nm VCSEL Diode Part # PCW-CS-200-W0808 • • • • • Vertical-Cavity Surface-Emitting Laser technology >200mW CW multi-mode power at 808nm Circular, low-diverging beam Custom wavelengths available 808-1064nm Custom packaging available (submount, Cmount, TO can)


    Original     		PDF 200mW 808nm PCW-CS-200-W0808 808nm 808-1064nm) 270mA, 200mW, 808nm 1W laser diode 808nm 1W W0808 PCW-CS-200-W0808 808nm VCSEL Laser diode laser 808nm 200mW laser diode 200mw

    Untitled

    Abstract: No abstract text available
    Text: STTH1202 Ultrafast recovery diode Main product characteristics IF AV 12 A VRRM 200 V Tj (max) 175° C VF (typ) 0.82 V trr (typ) 18 ns K Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time


    Original     		PDF STTH1202 O-220FPAC O-220AC O-220AC STTH1202D STTH1202FP STTH1202DI STTH1202

    Untitled

    Abstract: No abstract text available
    Text: STTH1202 Ultrafast recovery diode Main product characteristics IF AV 12 A VRRM 200 V Tj (max) 175° C VF (typ) 0.82 V trr (typ) 18 ns K Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time


    Original     		PDF STTH1202 O-220AC STTH1202D O-220FPAC STTH1202FP STTH1202DI STTH1202

    jdsu 2380

    Abstract: 2360a JDSU 2400 laser diode jdsu laser diode 6 GHz
    Text: COMMERCIAL LASERS Diode Lasers, 0.5 to 4.0 W, 8xx nm 2300 Series Key Features • 0.5, 1.2, 2.0 and 4.0 W CW power • 50, 100, 200 and 500 µm apertures • High-efficiency MOCVD quantum well design • Open heatsink package • High reliability Applications


    Original     		PDF 498-JDSU 5378-JDSU 2300DIODELASER jdsu 2380 2360a JDSU 2400 laser diode jdsu laser diode 6 GHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1Z6.2~1Z390,1Z6.8A~1Z30A TO SHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2-1Z390, 1Z6.8A-1Z30A Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS & Average Power Dissipation : P=1W Peak Reverse Power Dissipation : P r s M“ 200W at tw = 200/¿s


    OCR Scan     		PDF 1Z390 1Z30A 2-1Z390, A-1Z30A DO-15 SC-39

    T 1Z12

    Abstract: 1z12 toshiba
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A T O SH IB A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A 1Z3QA Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS • • • • Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : P r SM~^ÛOW at ^ = 200/^8


    OCR Scan     		PDF 1Z390 1Z30A 1Z390, CATH390 T 1Z12 1z12 toshiba

    1N914

    Abstract: No abstract text available
    Text: • 1N914UR AVAILABLE IN JAN, 1N914UR and CDLL914 JANTX, AND JANTXV PER MIL-PRF-195QQ/116 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C


    OCR Scan     		PDF 1N914UR MIL-PRF-195QQ/116 CDLL914 IN914UR 1N914

    1ZB36

    Abstract: 1ZB220-Y ZB30 1ZB20 zener 1ZB30 DIODE 1zb36 zener B5.1 ZB91 B5.1 zener ZB2 ZENER
    Text: 1ZB6.8 1ZB390 SILICON DIFFUSED TYPE ZENER DIODE CONSTANT VOLTAGE REGULATION. TRANSIENT SUPPRESSORS. . Average Power Dissipation : P=1W . Peak Reverse Power Dissipation : Pr s m = 200W at tw=200 Js . Zener Voltage : Vz=6.8~390V . T o l e r a n c e of Z e n e r V o l t a g e


    OCR Scan     		PDF 1ZB390 1ZB330-X) 1ZB13 1ZB16 1ZB18 1ZB20 1ZB27 1ZB33 1ZB36 1ZB220-Y ZB30 1ZB20 zener 1ZB30 DIODE 1zb36 zener B5.1 ZB91 B5.1 zener ZB2 ZENER