1SS200
Abstract: No abstract text available
Text: 1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Unit: mm Ultra High Speed Switching Application Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°°C)
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1SS200
1SS200
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Untitled
Abstract: No abstract text available
Text: 1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Ultra High Speed Switching Application Low forward voltage Unit in mm : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°°C)
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1SS200
961001EAA2'
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1SS200
Abstract: No abstract text available
Text: 1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Unit: mm Ultra High Speed Switching Application z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C)
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1SS200
1SS200
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1SS200
Abstract: No abstract text available
Text: 1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Unit: mm Ultra High Speed Switching Application z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) Absolute Maximum Ratings (Ta = 25°C)
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1SS200
1SS200
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1SS200
Abstract: DIODE 1SS200
Text: 1SS200 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Unit: mm Ultra High Speed Switching Application l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°°C)
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1SS200
1SS200
DIODE 1SS200
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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2fu smd transistor
Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A
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TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG02
O-220SM
CRG01
CRG04
CMG03
2fu smd transistor
2FK transistor
3FV 60 43
smd diode Lz zener
HN2S02JE
CMZ24
CRS01
DF2S6.2S
1SV101
1SV283B
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diode Z47
Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Text: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352
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HN2D01FU
HN2D02FU
OT-23MOD)
02CZ5
diode Z47
z43 diode
Z5.6
Z3.3
S360 DIODE
diode Z27
S368
diode zener z6
1s diode
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TOSHIBA 1N DIODE
Abstract: No abstract text available
Text: TOSHIBA 1SS200 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS2Q0 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. Low Forward Voltage : Vp 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance : C^ =2 .2pF' (Typ.)
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1SS200
55MAX
961001EAA2'
TOSHIBA 1N DIODE
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Untitled
Abstract: No abstract text available
Text: 1SS200 TO SHIBA 1SS200 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • Low Forward Voltage : Vp 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance : CT = 2.2pF (Typ.)
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1SS200
55MAX.
961001EAA2'
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1SS200
Abstract: No abstract text available
Text: TOSHIBA 1SS200 1 SS200 SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • Low Forward Voltage : Vp 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance : Cx = 2.2pF (Typ.) 0 .5 5 M A X .
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1SS200
961001EAA2'
1SS200
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