Untitled
Abstract: No abstract text available
Text: SEMiX251D12Fs Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 250 A Tc = 100 °C 215 A Tj = 25 °C 1660 A Tj = 150 °C 1330 A Tj = 25 °C 13700 A²s Tj = 150 °C 8800 A²s VRSM 1200 V VRRM 1200 V -40 . 150 °C -40 . 125 °C 1 min 4000
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SEMiX251D12Fs
SEMiX251D12Fs
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bridge rectifier module
Abstract: SEMIX251 Semikron M6 international rectifier 1660
Text: SEMiX251D12Fs Absolute Maximum Ratings Symbol Conditions Values Unit A Rect. Diode Tc = 85 °C 250 Tc = 100 °C 215 A Tj = 25 °C 1660 A Tj = 150 °C 1330 A Tj = 25 °C 13700 A2s Tj = 150 °C 8800 A2s VRSM 1200 V VRRM 1200 V -40 . 150 °C -40 . 125 °C
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Original
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SEMiX251D12Fs
bridge rectifier module
SEMIX251
Semikron M6
international rectifier 1660
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMiX251D12Fs Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 256 A Tc = 100 °C 217 A Tj = 25 °C 1660 A Tj = 150 °C 1330 A Tj = 25 °C 13700 A²s Tj = 150 °C 8800 A²s VRSM 1200 V VRRM 1200 V -40 . 150 °C -40 . 125 °C 1 min 4000
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SEMiX251D12Fs
SEMiX251D12Fs
E63532
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMiX251D12Fs Absolute Maximum Ratings Symbol Conditions Values Unit Tc = 85 °C 256 A Tc = 100 °C 217 A Tj = 25 °C 1660 A Tj = 150 °C 1330 A Tj = 25 °C 13700 A²s Tj = 150 °C 8800 A²s VRSM 1200 V VRRM 1200 V -40 . 150 °C -40 . 125 °C 1 min 4000
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SEMiX251D12Fs
E63532
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PDF
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in 4009 diode
Abstract: CC2D54-4009 CC2D74-2001 m4 Screw Terminal 1001 5A
Text: Instrument Transformers Split type CT/CC2 Split type current transformers, CC2 Primary current: 5 to 1200A Secondary current: 7.34mA to 5A • Description The CC2D, CC2C, and CC2N are split-type current transformers. The CT can be mounted to existing panels,
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26mVA,
AWG22:
1000mm
AWG18:
CC2D54,
CC2C76
75mm2
in 4009 diode
CC2D54-4009
CC2D74-2001
m4 Screw Terminal
1001 5A
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PDF
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31-968.25
Abstract: 31-050.002 ic stk 432 090 din IEC 68-2-6 ic stk 025 10-5309.3202 31-714-029 stk 432 050 UF 4007 Diode 02-912.4
Text: Befehls- und Meldegeräte 31 31 Befehls- und Meldegeräte Inhaltsübersicht Baureihe 31 Beschreibung Seite 129 Geräteaufbau Seite 130 Sortiment - Geräte Standard Einbau - Zubehör / Einzelteile 128 03.2000 Seite 131 Seite 133 Technische Daten Seite 139 Massbilder / Lochbilder / Bauteilelayouts
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2SK1968
Abstract: DSA003639 of 2sk1968
Text: 2SK1968 Silicon N-Channel MOS FET ADE-208-1337 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Low drive current Outline
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2SK1968
ADE-208-1337
2SK1968
DSA003639
of 2sk1968
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PDF
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2SK1957
Abstract: DSA003639
Text: 2SK1957 Silicon N-Channel MOS FET ADE-208-1336 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control
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2SK1957
ADE-208-1336
O-220FM
2SK1957
DSA003639
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PDF
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2SK2007
Abstract: DSA003639
Text: 2SK2007 Silicon N-Channel MOS FET ADE-208-1339 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, Motor Control
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2SK2007
ADE-208-1339
2SK2007
DSA003639
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2SK1947
Abstract: 2SK1947-E PRSS0004ZF-A
Text: 2SK1947 Silicon N Channel MOS FET REJ03G0986-0200 Previous: ADE-208-1334 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 140 ns)
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2SK1947
REJ03G0986-0200
ADE-208-1334)
PRSS0004ZF-A
2SK1947
2SK1947-E
PRSS0004ZF-A
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2SK1880
Abstract: Hitachi DSA00316
Text: 2SK1880 L , 2SK1880(S) Silicon N-Channel MOS FET ADE-208-1331 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline
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2SK1880
ADE-208-1331
Hitachi DSA00316
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HAT2218R
Abstract: HAT2218R-EL-E
Text: HAT2218R Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G0396-0300 Rev.3.00 Aug.23.2004 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode
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HAT2218R
REJ03G0396-0300
HAT2218R
HAT2218R-EL-E
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PDF
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2SK1968
Abstract: 2SK1968-E PRSS0004ZE-A SC-65
Text: 2SK1968 Silicon N Channel MOS FET REJ03G0989-0200 Previous: ADE-208-1337 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator
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2SK1968
REJ03G0989-0200
ADE-208-1337)
PRSS0004ZE-A
2SK1968
2SK1968-E
PRSS0004ZE-A
SC-65
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2SK2007
Abstract: 2SK2007-E PRSS0004ZE-A SC-65
Text: 2SK2007 Silicon N Channel MOS FET REJ03G0991-0200 Previous: ADE-208-1339 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC - DC converter, motor control
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2SK2007
REJ03G0991-0200
ADE-208-1339)
PRSS0004ZE-A
2SK2007
2SK2007-E
PRSS0004ZE-A
SC-65
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PDF
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HAT2210R
Abstract: HAT2210RJ PRSP0008DD-A HAT2210RJ-EL-E
Text: HAT2210R, HAT2210RJ Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G0578-0300 Rev.3.00 Mar.15.2005 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode
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HAT2210R,
HAT2210RJ
REJ03G0578-0300
PRSP0008DD-A
dissipati-900
Unit2607
HAT2210R
HAT2210RJ
PRSP0008DD-A
HAT2210RJ-EL-E
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PDF
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diode 6lf
Abstract: Matsua relay 12Vdc d83 004 CQ1-12V aromat relay catalog wiper motor 12v dc Matsua Relay 24 VDC 5A diode D83 004 Matsushita Electric Works relay COIL 12VDC Matsushita relay 12Vdc
Text: 1 FORM C AUTOMOTIVE QUIET RELAY 17.0 .669 CQ-RELAYS FEATURES 13.0 .512 • Quiet Noise has been reduced by approximately 20 dB, using our own silencing design. • Less space required Measuring only 17 L x 13(W)mm (.669(L) × .512(W) inches), this product
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E-28037
CH-6343
diode 6lf
Matsua relay 12Vdc
d83 004
CQ1-12V
aromat relay catalog
wiper motor 12v dc
Matsua Relay 24 VDC 5A
diode D83 004
Matsushita Electric Works relay COIL 12VDC
Matsushita relay 12Vdc
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PDF
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2SK1880
Abstract: 2SK1880L-E 2SK1880STL-E PRSS0004ZD-A PRSS0004ZD-C SH-500
Text: 2SK1880 L , 2SK1880(S) Silicon N Channel MOS FET REJ03G0983-0200 (Previous: ADE-208-1331) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator
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2SK1880
REJ03G0983-0200
ADE-208-1331)
PRSS0004ZD-A
PRSS0004ZD-C
2SK1880L-E
2SK1880STL-E
PRSS0004ZD-A
PRSS0004ZD-C
SH-500
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PDF
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IEC 947 EN 60947
Abstract: MCC panel design buzzer panel DC-13 Q300 RJ12 1302401 VDE 0660 - 107 Sonic Drive
Text: RAFIX 22 QR 2 General data RAFIX 22QR control component range • For a mounting hole diameter of 22.3 mm to IEC 60947 • 250V/10A max. • Water-jet proof IP65 • 2 collar shapes • The lamps of the pushbuttons can also be replaced from the front • The contact blocks silver or gold contacts snap onto the actuators with a coupling
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50V/10A
IEC 947 EN 60947
MCC panel design
buzzer panel
DC-13
Q300
RJ12
1302401
VDE 0660 - 107
Sonic Drive
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PDF
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IEC 947 EN 60947
Abstract: EN 60947-1/2 LED Lamp 1W RJ12 socket thermoflex 901-030 EN 60947-5-5 IEC 60947-5-5 DC-13 RJ12
Text: RAFIX 22 QR 2 General data RAFIX 22QR control component range • For a mounting hole diameter of 22.3 mm to IEC 60947 • 250V/10A max. • Water-jet proof IP65 • 2 collar shapes • The lamps of the pushbuttons can also be replaced from the front • The contact blocks silver or gold contacts snap onto the actuators with a coupling
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50V/10A
M20x1
M25x1
IEC 947 EN 60947
EN 60947-1/2
LED Lamp 1W
RJ12 socket
thermoflex
901-030
EN 60947-5-5
IEC 60947-5-5
DC-13
RJ12
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PDF
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MCC panel design
Abstract: IEC960947-5-1 RJ12
Text: RAFIX 22 QR 2 General data RAFIX 22QR control component range • For a mounting hole diameter of 22.3 mm to IEC 60947 • 250V/10A max. • Water-jet proof IP65 • 2 collar shapes • The lamps of the pushbuttons can also be replaced from the front • The contact blocks silver or gold contacts snap onto the actuators with a coupling
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Original
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50V/10A
M20x1
M25x1
MCC panel design
IEC960947-5-1
RJ12
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PDF
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dmo 265 r
Abstract: M7 diode footprint wave soldering PCD3332-X Cassio dmo 265 DIP28 PCD3332-2 PCD3332-2P PCD3332-2T PCD3332-3
Text: Preliminary specification Philips Semiconductors Multistandard pulse/tone repertory diallers/ringers_ PCD3332-X family FEATURES • Ringer tone generator • Pulse and DTMF mixed mode dialling • Ringer-input frequency discriminator • 13 number repertory dial up to 32 digits
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OCR Scan
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PCD3332-2)
tran60
7110fl2b
dmo 265 r
M7 diode footprint wave soldering
PCD3332-X
Cassio
dmo 265
DIP28
PCD3332-2
PCD3332-2P
PCD3332-2T
PCD3332-3
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PDF
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dmo 265 r
Abstract: mla diode DIP28 PCD3332-2 PCD3332-2P PCD3332-2T PCD3332-3 PCD3332-3P PCD3332-3T PCD3332-SP
Text: Philips Semiconductors Product specification Multistandard pulse/tone repertory diallers/ringers PCD3332-X family FEATURES • Ringer tone generator • Pulse and DTMF mixed mode dialling • Ringer-input frequency discriminator • 13 number repertory dial up to 32 digits
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OCR Scan
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PCD3332-2)
711GfiSb
1G7G17
dmo 265 r
mla diode
DIP28
PCD3332-2
PCD3332-2P
PCD3332-2T
PCD3332-3
PCD3332-3P
PCD3332-3T
PCD3332-SP
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Product specification Multistandard pulse/tone repertory . . . . . . diallers/ringers _ , PCD3332-X family ' FEATURES • Ringer tone generator • Pulse and DTMF mixed mode dialling • Ringer-input frequency discriminator • 13 number repertory dial up to 32 digits
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OCR Scan
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PCD3332-X
PCD3332-3)
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PDF
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Untitled
Abstract: No abstract text available
Text: bOE J> • fl235b05 00M5tiôE 133 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF SIMOPAC Module VDS / D R DS on BSM151 = 500 V =48 A “ 0.12 £2 • Power module • Single switch • N channel • Enhancement mode • Package with insulated metal base plate
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OCR Scan
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fl235b05
00M5tiÃ
BSM151
C67076-A1004-A2
SIM00006
fl23SbG5
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PDF
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