UA 741 SMD
Abstract: uA 741 automatic laser power control 6 pin laser diode capacitor 475 laser diode driver circuit automatic power control SMD-Ferrit MS-026 VSC7938 VSC7939
Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Control VSC7939 Features Applications • Power Supply: 3.3V or 5V ±5% • AC-Coupled to Laser Diode • SONET/SDH at 622Mb/s, 1.244Gb/s,
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125Gb/s
VSC7939
622Mb/s,
244Gb/s,
488Gb/s,
062Gb/s)
100mA
VSC7939
125Gb/s.
UA 741 SMD
uA 741
automatic laser power control
6 pin laser diode
capacitor 475
laser diode driver circuit automatic power control
SMD-Ferrit
MS-026
VSC7938
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Untitled
Abstract: No abstract text available
Text: BAT41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT41
DO-35
BAT41
BAT41-TAP
BAT41-TR
D-74025
06-Jun-05
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Untitled
Abstract: No abstract text available
Text: BAT41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT41
DO-35
BAT41
BAT41-TAP
BAT41-TR
08-Apr-05
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BAT41
Abstract: bat41 600
Text: BAT41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage e2 and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic
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BAT41
2002/95/EC
2002/96/EC
BAT41
BAT41-TAP
BAT41-TR
08-Apr-05
bat41 600
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82952
Abstract: smd 4-pin
Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Control VSC7939 Features Applications • Power Supply: 3.3V or 5V ±5% • AC-Coupled to Laser Diode • SONET/SDH at 155Mb/s, 622Mb/s, 1.244Gb/s,
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VSC7939
125Gb/s
155Mb/s,
622Mb/s,
244Gb/s,
488Gb/s,
125Gb/s
OC-12,
OC-48)
062Gb/s/2
82952
smd 4-pin
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uA 741
Abstract: RF resistor 32-1059 SMD resistor 805 capacitor 475 MS-026 VSC7938 VSC7939 VSC7940 CD 741
Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Control VSC7938 Features Applications • SDH/SONET at 622Mb/s, 1.244Gb/s, 2.488Gb/s, 3.125Gb/s • Power Supply: 3.3V or 5V ±5% • AC-Coupled to Laser Diode
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125Gb/s
VSC7938
622Mb/s,
244Gb/s,
488Gb/s,
100mA
062Gb/s)
VSC7938
125Gb/s.
uA 741
RF resistor 32-1059
SMD resistor 805
capacitor 475
MS-026
VSC7939
VSC7940
CD 741
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atmel 530
Abstract: 4634 AC100 T2525 atmel 533
Text: Features • No External Components Except PIN Diode • Supply-voltage Range: 4.5V to 5.5V • Highest Sensitivity Due to Automatic Sensitivity Adaption AGC and Automatic Strong Signal Adaption (ATC) • Highest Immunity Against Disturbances from Daylight and Lamps
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T2525
T2525
4657G
atmel 530
4634
AC100
atmel 533
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atmel 533
Abstract: 4634 AC100 T2525
Text: Features • No External Components Except PIN Diode • Supply-voltage Range: 4.5V to 5.5V • Highest Sensitivity Due to Automatic Sensitivity Adaption AGC and Automatic Strong Signal Adaption (ATC) • Highest Immunity Against Disturbances from Daylight and Lamps
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T2525
T2525
4657F
atmel 533
4634
AC100
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Untitled
Abstract: No abstract text available
Text: BAT41 VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT41
DO-35
BAT41
BAT41-TAP
BAT41-TR
D-74025
27-Apr-04
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Untitled
Abstract: No abstract text available
Text: BAT41 VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT41
DO-35
BAT41
BAT41-GS18
BAT41-GS08
D-74025
11-Mar-04
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Untitled
Abstract: No abstract text available
Text: BAT41 VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT41
DO-35
BAT41
BAT41-GS18
BAT41-GS08
D-74025
03-Feb-04
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UCC27201A-DIE
Abstract: No abstract text available
Text: UCC27201A-DIE www.ti.com SLUSB70 – AUGUST 2012 HIGH FREQUENCY, HIGH-SIDE/LOW-SIDE DRIVER FEATURES 1 • • • • • Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration Maximum Boot Voltage Maximum VDD Voltage On-Chip RD Bootstrap Diode Under Voltage Lockout for High-Side and
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UCC27201A-DIE
SLUSB70
UCC27201A
UCC27201A-DIE
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UCC27201A-DIE
Abstract: No abstract text available
Text: UCC27201A-DIE www.ti.com SLUSB70 – AUGUST 2012 HIGH FREQUENCY, HIGH-SIDE/LOW-SIDE DRIVER FEATURES 1 • • • • • Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration Maximum Boot Voltage Maximum VDD Voltage On-Chip RD Bootstrap Diode Under Voltage Lockout for High-Side and
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UCC27201A-DIE
SLUSB70
UCC27201A
UCC27201A-DIE
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IGBT inverter calculation
Abstract: inverter circuit using IGBT module 3 phase IGBT inverter design IGBT inverter calculation FOR A UPS igbt module testing calculation of switching frequency of igbt inverter design drive circuit of IGBT IGBT igbt uses in rectifier IGBT JUNCTION TEMPERATURE CALCULATION
Text: ISSN: 1863-5598 Electronics in Motion and Conversion ZKZ 64717 05-08 May 2008 COVER STORY The Optimal IGBT for Motor Drives Applications Drive with the XPT IGBT IXYS introduces the XPT IGBT, the newest generation of short-circuit rated IGBTs with paralleling capabilities and competitive performance. Implementation of innovative cell
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SJ-5007
Abstract: MAX1772 equivalent diode U3d U5FWK2C42 diode U3d on MAX1772 Rev 1 LR2512 LR2512-01-R050-F WSL-2512-R050-F Sj 33 diode
Text: 19-1863; Rev 0; 11/00 MAX1772 Evaluation Kit Features ♦ Input Current Limiting ♦ ±0.7% Output Voltage Accuracy ♦ Analog Inputs Control Charge Current and Charge Voltage ♦ Monitor Outputs for: Current Drawn from AC Input Source Charging Current AC Adapter Presence
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MAX1772
SJ-5007
MAX1772 equivalent
diode U3d
U5FWK2C42
diode U3d on
MAX1772 Rev 1
LR2512
LR2512-01-R050-F
WSL-2512-R050-F
Sj 33 diode
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ph 4148 zener diode
Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vHN-db1102-0407
ph 4148 zener diode
ka6 transistor smd
Marking Code SMD databook
melf diodes color code 4148
TRANSISTOR SMD MARKING CODE w2
GLUE IR-130
smd diode sod-323 marking code L2
smd diode marking 5d SOD-323
SOD-123 a2 4148
TRANSISTOR SMD MARKING CODE 352
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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KHB7D0N80F1
Abstract: KHB7D0N80F khb7d0n80 KHB7D0N80P1
Text: SEMICONDUCTOR KHB7D0N80P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB7D0N80P1/F1
KHB7D0N80P1
KHB7D0N80F1
KHB7D0N80F
khb7d0n80
KHB7D0N80P1
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1550 nm dfb laser source, jdsu
Abstract: JDSU CQF413 JDSU laser diode
Text: Product Bulletin Temperature Tunable 10 mW WDM Laser for Direct Modulation in Links up to 180 km CQF413/608 Series The JDS Uniphase CQF413/608 is a two-channel, tunable, directly modulated laser source for use in metro wavelength division multiplexing WDM
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CQF413/608
14-pin
RWR-030-42-03087-WWM,
1550 nm dfb laser source, jdsu
JDSU CQF413
JDSU laser diode
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1550 nm dfb laser source, jdsu
Abstract: CQF413 JDSU Tunable Laser JDSU CQF413 JDSU laser diode
Text: Product Bulletin 13/4 08-1 9270 The CQF413/408 is a 2 channel tunable 100 GHz ITU grid directly modulated laser source for use in metro WDM systems up to a bit rate of 2.5 Gb/s and 100 km link length. The peak output power is 10 mW. Wavelengths are available in the range from
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CQF413/408
OC-48
STM-16
1550 nm dfb laser source, jdsu
CQF413
JDSU Tunable Laser
JDSU CQF413
JDSU laser diode
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CQF413
Abstract: CQF413/608-19270 GR-468-CORE laser diode catv GHz CQF413/608 STM-16 JDSU Tunable Laser JDSU laser diode
Text: Product Bulletin 13/6 08-1 9270 Temperature Tunable 10 mW WDM Laser for Direct Modulation in Links up to 180 km CQF413/608 Series The CQF413/608 is a 2 channel tunable 100 GHz ITU grid directly modulated laser source for use in metro WDM systems up to a bit rate of
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CQF413/608
RWR-030-42-01087-WWM,
CQF413
CQF413/608-19270
GR-468-CORE
laser diode catv GHz
STM-16
JDSU Tunable Laser
JDSU laser diode
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CQF413
Abstract: GR-468-CORE STM-16 1550 nm dfb laser source, jdsu
Text: Product Bulletin 13/4 08-1 9270 The CQF413/408 is a 2 channel tunable 100 GHz ITU grid directly modulated laser source for use in metro WDM systems up to a bit rate of 2.5 Gb/s and 100 km link length. The peak output power is 10 mW. Wavelengths are available in the range from
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CQF413/408
14-pin
RWR-030-42-01090-WWM,
CQF413
GR-468-CORE
STM-16
1550 nm dfb laser source, jdsu
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Untitled
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC RfiD D • âRSQO^b 0007ÔE7 T ■ ALGG T C S S 110. up to TCSS 420. Ml electronic Creative technologies Optoelectronic Interrupters with Schmitt-Trigger Output Logic Construction: Emitter: Detector: GaAs IR Emitting Diode Integrated Optoelectronic Circuit
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OCR Scan
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Y/-73
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IRL3705N
Abstract: No abstract text available
Text: PD - 9.1370B International IO R Rectifier IRL3705N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description
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OCR Scan
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1370B
IRL3705N
O-220
IRL3705N
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