pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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Untitled
Abstract: No abstract text available
Text: 1850 nm Laser Diode SAR-1850-20 Description The SAR-1850-20 is a high power broad area laser diode intended for midinfrared applications including spectroscopy and solid-state laser pumping. Absolute maximum ratings Parameter Operating temperature Laser diode
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SAR-1850-20
SAR-1850-20
SAR-1850-20,
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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frequency stability analysis colpitts oscillator
Abstract: phase detector 10khz Colpitts VCO design Colpitts colpitts oscillator LMH6624 LMK03000 LMX2531 LP5900 noise diode
Text: Local oscillator Characteristics and design considerations Varactor diode • Also named as variable capacitance diode • Diode capacitance changes with reverse bias • Used as a variable capacitor • A capacitor in parallel with an inductor forms a tank circuit
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200Hz
500KHz
LMK03000
frequency stability analysis colpitts oscillator
phase detector 10khz
Colpitts VCO design
Colpitts
colpitts oscillator
LMH6624
LMX2531
LP5900
noise diode
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LMH6525
Abstract: High-Frequency Modulation Laser cd dvd
Text: LMH6525,LMH6526 LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output Literature Number: SNOSAF1A LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output General Description Features The LMH 6525/6526 is a laser diode driver for use in
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LMH6525
LMH6526
LMH6525/LMH6526
LMHTM6525/6526
High-Frequency Modulation Laser cd dvd
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M50D0
Abstract: 1000 Amp current diode M50100TB1200 M50D E72445 M5060 crydom rectifier
Text: Series M50 Diode 60-100 Amp • DIODE Modules • High Surge Current Rectifier Circuits • Up to 1600 Volt Blocking Standard Single- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge capability, extended life, and reliable
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E72445)
120VSpecifications
D-66687
M50D0
1000 Amp current diode
M50100TB1200
M50D
E72445
M5060
crydom rectifier
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1842m
Abstract: DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P
Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser
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200mA
400mA
Aug-05
29-Sep-09
LDD200P-00400-A
1842m
DIODE 4d
LDD400-1P
ldd200
2i125
LDD200-2P
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DIODE 4d
Abstract: LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P
Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser
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200mA
400mA
Aug-05
29-Sep-09
LDD200P-00400-A
DIODE 4d
LDD200-1P
ldd200
LDD400-1P
LDDCAB-50
LDD200-2P
DIODE 1N4001
LDD200P-00400
LDD400-3P
DD200-1P
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IDW40G65C5
Abstract: D4065C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW40G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW40G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for
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IDW40G65C5
IDW40G65C5
D4065C5
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MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
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MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1416-02 04-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
CH-5600
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4DSM
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1416-00 04-2011 5SLA 3600E170300 ABB HiPakTM, Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
CH-5600
4DSM
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1416-01 11-2011 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
CH-5600
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5SLA 3600E170300
Abstract: 5SYA2039 3600E170300
Text: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
C9113
CH-5600
5SLA 3600E170300
5SYA2039
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
CH-5600
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW40G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW40G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDW40G65C5
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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Untitled
Abstract: No abstract text available
Text: Series M 50 Diode 60-100 A m p * DIODE Modules • High Surge Current Rectifier Circuits • Up to 1600 Volt Blocking Standard C3YJDM Control over power Sngle- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge
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E72445)
D-66687
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Laser FP 1550 mW
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NDL7562P InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1550 nm OTDR APPLICATION DESCRIPTION NDL7562P is a 1550 nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode DIP module with singlemode fiber and internal thermoelectric cooler.
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NDL7562P
NDL7562P
L7562P
Laser FP 1550 mW
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Condor
Abstract: M50D E72445 M50100TB1200
Text: Series M 50 Diode 60-100 A m p * DIODE Modules • High Surge Current Rectifier Circuits • Up to 1600 Volt Blocking Standard c a v a dm Control over power Sngle- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge
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PDF
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E72445)
M50100TB1200
D-66687
Condor
M50D
E72445
M50100TB1200
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Untitled
Abstract: No abstract text available
Text: ¿CM A dvanced po w er Te c h n o l o g y • 1 - Cathode 2 - Anode Back of Case - Cathode APT60D120B 1200V 60A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES Anti-Parallel Diode -Switchmode Power Supply -Inverters 1Free Wheeling Diode
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APT60D120B
O-247
-480A/HS,
O-247AD
00G2GS3
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a106 diode
Abstract: diode A106 SF313 Diode Optical Smoke DEtector SE313
Text: 6427525 N E C ELECTRONICS 18268 D T* ^ ^ 4 2 7 5 2 5 GDlflShfl 1 D eT~ 98D INC_J38D ELECTRONICS INC " Tfl PRELIMINARY SPEC! F! CATIOIV NEC r ELECTRON DEVICE LIG H T EM ITTING DIODE SE3 13 / GaAs INFRARED EM ITTING DIODE -N EPO C SER IES - DESCRIPTION
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b427S25
SF313
Tt-25
lp-50
a106 diode
diode A106
Diode Optical Smoke DEtector
SE313
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point contact diode
Abstract: back Tunnel diode "Point Contact Diode" "back diode" DIODE D
Text: DETECTORS O ve rvie w . Back Diode D e te c to rs. Tunnel Diode D e te c to rs. Biased Schottky D e te cto rs.
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