APT0502
Abstract: No abstract text available
Text: APT17M120JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT17M120JCU3
OT-227)
APT0502
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Untitled
Abstract: No abstract text available
Text: APT17M120JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT17M120JCU3
OT-227)
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APT0502
Abstract: SiC MOSFET mosfet 10a 800v high power
Text: APT17M120JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT17M120JCU2
OT-227)
APT0502
SiC MOSFET
mosfet 10a 800v high power
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Untitled
Abstract: No abstract text available
Text: APT17M120JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT17M120JCU2
OT-227)
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Untitled
Abstract: No abstract text available
Text: APT17F80B APT17F80S 800V, 17A, 0.65Ω Max, trr ≤250ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT17F80B
APT17F80S
250ns
APT17F80B
APT17F(
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SA215
Abstract: No abstract text available
Text: APT17F100B APT17F100S 1000V, 17A, 0.80Ω Max, trr ≤245ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT17F100B
APT17F100S
245ns
SA215
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Untitled
Abstract: No abstract text available
Text: APT17F100B APT17F100S 1000V, 17A, 0.78Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT17F100B
APT17F100S
245ns
APT17F100B
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APT17F100B
Abstract: APT17F100S MIC4452
Text: APT17F100B APT17F100S 1000V, 17A, 0.80Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT17F100B
APT17F100S
245ns
APT17F100B
APT17F100S
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT17F100B APT17F100S 1000V, 17A, 0.78Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT17F100B
APT17F100S
245ns
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APT17F100B
Abstract: APT17F100S MIC4452 mosfet 1000v 9A
Text: APT17F100B APT17F100S 1000V, 17A, 0.78Ω Max, trr ≤245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT17F100B
APT17F100S
245ns
APT17F100B
APT17F100S
MIC4452
mosfet 1000v 9A
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diode 17a 400v
Abstract: No abstract text available
Text: SSFP16N40 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 400V Simple Drive Requirement ID25 = 17A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
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SSFP16N40
00A/s
ISD17A
di/dt250A/S
TJ150
width300S;
diode 17a 400v
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74w datasheet
Abstract: MOSFET 400V NTE2934
Text: NTE2934 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS on : 0.254Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 400V
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NTE2934
74w datasheet
MOSFET 400V
NTE2934
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IRFP350A
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFP350A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.3Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 17 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
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IRFP350A
IRFP350A
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Untitled
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFP350 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.3Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 17 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
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IRFP350
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 17N40K-MT Power MOSFET 17A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 17N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum
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17N40K-MT
17N40K-MT
QW-R502-B15
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diode 17a 400v
Abstract: No abstract text available
Text: IRFP350A A d van ced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = 4 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VOS =400V
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IRFP350A
1RFP35
diode 17a 400v
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Untitled
Abstract: No abstract text available
Text: IRFP350 A d van ced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V
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IRFP350
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Untitled
Abstract: No abstract text available
Text: IRFP350A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 j-iA Max. @ VDS = 400V
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IRFP350A
RFP350A
200nFS"
300nF
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IRFP350A
Abstract: No abstract text available
Text: IRFP350A A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 -3 £ 2 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V
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IRFP350A
IRFP350A
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gs driver
Abstract: IRF750A
Text: ERF750A Advanced Power MOSFET FEATURES BVdss = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 jaA Max. @ VDS= 400V
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ERF750A
IRF750A
gs driver
IRF750A
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IRFP350
Abstract: Diode KD 202
Text: IRFP350 A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 -3 £ 2 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V
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IRFP350
IRFP350
Diode KD 202
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Untitled
Abstract: No abstract text available
Text: IRFS350A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS= 400V ■ Low R qs<o n i - 0.254 £2 (Typ.)
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IRFS350A
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IRF750
Abstract: No abstract text available
Text: IRF750 A d van ced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V
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IRF750
O-220
IRF750
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Untitled
Abstract: No abstract text available
Text: IRF750A A d van ced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V
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IRF750A
O-220
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