diode avalanche DSA 25 8
Abstract: 17-12A diode avalanche DSA ixys dsi 17-16-A DIODE DSA 18 1712A
Text: DS 17 DSA 17 VRRM = 800-1800 V IF RMS = 40 A IF(AV)M = 25 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM Anode DO-203 AA Cathode V V V 900 1300 - 800 1200 DS 17-08A DS 17-12A DSI 17-08A DSI 17-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800 DSA 17-12A
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DO-203
7-08A
7-12A
7-16A
7-18A
diode avalanche DSA 25 8
17-12A
diode avalanche DSA
ixys dsi
17-16-A
DIODE DSA 18
1712A
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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DSS17-06CR
Abstract: 17-06CR
Text: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns Electrically Isolated Back Surface Preliminary Data VRSM VRRM V V 600 600 Type A C ISOPLUS 247TM C DSS 17-06CR A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol
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17-06CR
247TM
DSS17-06CR
DSS17-06CR
17-06CR
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Untitled
Abstract: No abstract text available
Text: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V = 45 ns trr Electrically Isolated Back Surface Preliminary Data VRSM VRRM V V 600 600 Type A C ISOPLUS 247TM C DSS 17-06CR A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol
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17-06CR
247TM
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BAP50LX
Abstract: SMD MARKING CODE M 4 Diode
Text: BAP50LX Silicon PIN diode Rev. 01 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description General purpose PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • Low diode capacitance ■ Low diode forward resistance
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BAP50LX
OD882T
sym006
BAP50LX
SMD MARKING CODE M 4 Diode
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DIODE BAT 17
Abstract: A777 DIODE BAT Q62702-A777 Q62702-A504 Q62702-A775 Q62702-A776 MARKING 54 "Pin Diode" cu marking code diode Q62702-A77
Text: BAT 17… Silicon Schottky Diode ● ● For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 BAT 17 BAT 17-04 BAT 17-05 BAT 17-06 Q62702-A504 Q62702-A775 Q62702-A776 Q62702-A777
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Q62702-A504
Q62702-A775
Q62702-A776
Q62702-A777
OT-23
DIODE BAT 17
A777
DIODE BAT
Q62702-A777
Q62702-A504
Q62702-A775
Q62702-A776
MARKING 54 "Pin Diode"
cu marking code diode
Q62702-A77
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Untitled
Abstract: No abstract text available
Text: DSS 17-06CR HiPerDynTM Schottky Diode IFAV = 17 A VRRM = 600 V trr = 45 ns Electrically Isolated Back Surface VRSM VRRM V V Type A C ISOPLUS 247TM C A Isolated back surface * 600 600 DSS 17-06CR A = Anode, C = Cathode * Patent pending Symbol Conditions Maximum Ratings
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17-06CR
247TM
DSS17-06CR
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RJS6004TDPP-EJ
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A
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RJS6004TDPP-EJ
R07DS0896EJ0200
PRSS0002ZA-A
O-220FP-2L)
RJS6004TDPP-EJ
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RJS6005TDPP-EJ
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A
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RJS6005TDPP-EJ
R07DS0900EJ0200
PRSS0002ZA-A
O-220FP-2L)
RJS6005TDPP-EJ
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top marking c2 sot23
Abstract: Diode SOT-23 marking C2
Text: BAT 17 . Silicon Schottky Diode 3 • For mixer applications in the VHF / UHF range • For high-speed switching applications 2 1 BAT 17 BAT 17-05 BAT 17-04 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT 17-06 3 3 VPS05161 1 2 EHA07006 EHA07004 Type Marking Pin Configuration
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EHA07005
EHA07002
VPS05161
EHA07006
EHA07004
OT-23
EHD07108
top marking c2 sot23
Diode SOT-23 marking C2
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Untitled
Abstract: No abstract text available
Text: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz
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MSWSE-050-17
0805P)
MSWSE-050-17
STD-J-20C
A17119
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Untitled
Abstract: No abstract text available
Text: MSWSE-050-17 Silicon PIN Diode Switch Element 0805P non-hermetic Description Features The MSWSE-050-17 is a PIN diode SPST switch element designed for medium incident power applications, up to 40W C.W. It has low insertion loss. • Broadband performance up to 3.0 GHz
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MSWSE-050-17
0805P)
MSWSE-050-17
STD-J-20C
A17119
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automotive ignition
Abstract: CAR IGNITION Electronic car ignition circuit
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX135GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GPL FEATURES DESCRIPTION
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M3D473
BYX135GPL
SCA73
613510/02/pp8
automotive ignition
CAR IGNITION
Electronic car ignition circuit
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Electronic car ignition circuit
Abstract: automotive ignition CAR IGNITION
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX132GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 01 Philips Semiconductors Product specification High-voltage car ignition diode BYX132GPL FEATURES DESCRIPTION
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M3D473
BYX132GPL
SCA73
613510/02/pp8
Electronic car ignition circuit
automotive ignition
CAR IGNITION
|
|
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diode Cathode indicated by blue band
Abstract: automotive ignition Electronic car ignition circuit
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX134GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 01 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GPL FEATURES DESCRIPTION
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M3D473
BYX134GPL
SCA73
613510/02/pp8
diode Cathode indicated by blue band
automotive ignition
Electronic car ignition circuit
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BGF120
Abstract: No abstract text available
Text: TVS Diodes Transient Voltage Suppressor Diodes BGF120A Dual Channel Ultra-Low Capacitance ESD Diode Datasheet Rev. 1.4, 2012-09-17 Final Power Management & Multimarket Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG
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BGF120A
BGF120
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ESD101-B1-02ELS
Abstract: ESD101-B1-02EL
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD101-B1-02series Bi-directional Ultra Low Capacitance TVS Diode ESD101-B1-02ELS ESD101-B1-02EL Data Sheet Revision 1.0, 2013-04-17 Final Power Management & Multimarket Edition 2013-04-17 Published by Infineon Technologies AG
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ESD101-B1-02series
ESD101-B1-02ELS
ESD101-B1-02EL
includiESD101-B1-02series
TSLP-2-20
TSLP-2-20
ESD101-B1-02EL
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DIODE smd marking pl
Abstract: BB149A M3D049 st smd diode marking code BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB149A UHF variable capacitance diode Product specification 1997 Dec 17 Philips Semiconductors Product specification UHF variable capacitance diode BB149A FEATURES DESCRIPTION • Excellent linearity The BB149A is a planar technology
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M3D049
BB149A
BB149A
OD323
MAM392
SCA56
117027/1200/01/pp8
DIODE smd marking pl
M3D049
st smd diode marking code
BP317
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BB153
Abstract: st smd diode marking code BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB153 VHF variable capacitance diode Product specification 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB153 FEATURES DESCRIPTION • Excellent linearity The BB153 is a planar technology
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M3D049
BB153
BB153
OD323
MAM392
SCA56
117027/1200/01/pp8
st smd diode marking code
BP317
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BB164
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB164 VHF variable capacitance diode Product specification 1997 Dec 17 Philips Semiconductors Product specification VHF variable capacitance diode BB164 FEATURES DESCRIPTION • High linearity The BB164 is a planar technology
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M3D049
BB164
BB164
OD323
MAM392
SCA56
117027/1200/01/pp8
BP317
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BB156
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D049 BB156 Low-voltage variable capacitance diode Product specification 1998 Aug 17 Philips Semiconductors Product specification Low-voltage variable capacitance diode BB156 FEATURES • Excellent linearity • Very small plastic SMD package
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M3D049
BB156
MAM392
OD323)
BB156
OD323
SCA60
115104/00/01/pp8
BP317
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Untitled
Abstract: No abstract text available
Text: PIN DIODE MODULES Contents PIN DIODE MODULES CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE GENERAL & QUALITY INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17-2 All specifications contained in that catalog are subject to change without notice.
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BP317
Abstract: BYX134GPL
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX134GPL High-voltage car ignition diode Product specification 2000 Jul 17 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GPL FEATURES DESCRIPTION • Plastic package Plastic package, using glass passivation and a high
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M3D473
BYX134GPL
613510/01/pp8
BP317
BYX134GPL
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BP317
Abstract: BYX133GPL MBL155
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX133GPL High-voltage car ignition diode Product specification 2000 Jul 17 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GPL FEATURES DESCRIPTION • Plastic package Plastic package, using glass passivation and a high
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M3D473
BYX133GPL
613510/01/pp8
BP317
BYX133GPL
MBL155
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