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    DIODE 148 Search Results

    DIODE 148 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 148 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1480 nm diode laser

    Abstract: NX7461LE NX7461LE-BA NX7461LE-CA NX8562LB 1480 nm laser diode
    Text: 1480 nm EDFA APPLICATION InGaAsP STRAINED MQW-DC-PBH LASER DIODE MODULE NX7461LE FEATURES DESCRIPTION • InGaAsP STRAINED MQW DC-PBH LASER DIODE • HIGH OUTPUT POWER: Pf = 150 mW MIN @ IF = 600 mA CW The NX7461LE is a 1480 nm pumping laser diode module with


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    NX7461LE NX7461LE 14-PIN 24-Hour 1480 nm diode laser NX7461LE-BA NX7461LE-CA NX8562LB 1480 nm laser diode PDF

    1480 nm laser diode

    Abstract: NX7462LE NX7462LE-CC
    Text: NEC's 1480 nm InGaAsP MQW FP PUMP LASER DIODE MODULE NX7462LE-CC FOR EDFA APPLICATION 120 mW MIN FEATURES DESCRIPTION • InGaAsP MQW-FP LASER DIODE • HIGH OUTPUT POWER: Pf = 120 mW MIN @ IF = 550 mA CW NEC's NX7462LE -CC is a 1480 nm pumping laser diode


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    NX7462LE-CC NX7462LE 14-PIN 1480 nm laser diode NX7462LE-CC PDF

    NX7461LE-CC

    Abstract: edfa pump laser 1480 nm diode laser
    Text: NEC's 1480 nm InGaAsP MQW FP PUMP LASER DIODE MODULE FOR EDFA APPLICATION 150 mW MIN NX7461LE-CC FEATURES DESCRIPTION • InGaAsP MQW-FP LASER DIODE • HIGH OUTPUT POWER: Pf = 150 mW MIN @ IF = 600 mA CW NEC's NX7461LE-CC is a 1480 nm pumping laser diode


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    NX7461LE-CC NX7461LE-CC 14-PIN edfa pump laser 1480 nm diode laser PDF

    NX7460LE

    Abstract: NX7460LE-BA NX7460LE-CA
    Text: 1480 nm EDFA APPLICATION InGaAsP MQW-FP LASER DIODE MODULE NX7460LE FEATURES DESCRIPTION • InGaAsP MQW-FP LASER DIODE • HIGH OUTPUT POWER: Pf = 120 mW MIN @ IF = 550 mA CW The NX7460LE is a 1480 nm pumping laser diode module with optical isolator for an EDFA Er Doped optical Fiber Amplifier


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    NX7460LE NX7460LE 14-PIN NX7460LE-CA NX7460LE-BA 24-Hour NX7460LE-BA NX7460LE-CA PDF

    Diode Motorola 711 2N2905A

    Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


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    MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MV2103 Diode Motorola 711 2N2905A pin configuration transistor BC547 2N2222 BC237 2N555 PDF

    nec laser diode OTDR

    Abstract: MEI-1202 NEC LASER DIODE PIN DIP NEC DIODE LASER C10535E NDL7542P
    Text: DATA SHEET LASER DIODE NDL7542P InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1480 nm OTDR APPLICATION DESCRIPTION NDL7542P is a 1480 nm a newly developed Strained Multiple Quantum Well St-MQW structure pulsed laser diode DIP module with singlemode fiber and internal thermoelectric cooler. It is designed for light sources of optical


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    NDL7542P NDL7542P nec laser diode OTDR MEI-1202 NEC LASER DIODE PIN DIP NEC DIODE LASER C10535E PDF

    IDW40G120C5B

    Abstract: No abstract text available
    Text: Silicon Carbide Schottky Diode IDW40G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW40G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1


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    IDW40G120C5B IDW40G120C5B PDF

    NDL7540PA

    Abstract: NDL7540PAC NDL7540PAD 1480 nm diode laser 1480 nm laser diode
    Text: 1480 nm EDFA APPLICATION InGaAsP STRAINED MQW NDL7540PA DC-PBH LASER DIODE MODULE FEATURES DESCRIPTION • InGaAsP STRAINED MQW DC-PBH LASER DIODE The NDL7540PA is a 1480 nm pumping laser diode module with optical isolator for an EDFA ER Doped optical Fiber Amplifier that can expand the transmission span and compensate optical losses. It has a newly developed strained Multiple


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    NDL7540PA NDL7540PA 14-PIN 24-Hour NDL7540PAC NDL7540PAD 1480 nm diode laser 1480 nm laser diode PDF

    W66ESF002X13

    Abstract: generators winding circuit diagrams EHT COIL EHT COIL transformer W66ESF 335NF circuit diagram of pulse position modulator DSADA0016983 AN96099
    Text: APPLICATION NOTE Diode modulator for linear zoom. AN96099 Philips Semiconductors Diode modulator for linear zoom. Application Note AN96099 Abstract A short description is given on the existing diode modulator functioning and the changes which have to be made


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    AN96099 W66ESF002X13 generators winding circuit diagrams EHT COIL EHT COIL transformer W66ESF 335NF circuit diagram of pulse position modulator DSADA0016983 AN96099 PDF

    MAD130P

    Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


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    MMAD1108 De218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MAD130P 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72 PDF

    Untitled

    Abstract: No abstract text available
    Text: ODLOL492L-01 Electronics Components OL492L Issue Date:May.2002 Preliminary 1480nm DFB Laser Diode Uncooled Coax Module with Single Mode Fiber, Built-in Isolator 1. DESCRIPTION OL492L is a 1480nm DFB Laser Diode in a panel Mountable coaxial package with single mode fiber


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    OL492L ODLOL492L-01 1480nm OL492L PDF

    Untitled

    Abstract: No abstract text available
    Text: PEDF4121N-120-01 1Electronic Components OL4121N-120 This version: Mar. 2001 1480 nm/120 mW Laser Diode Butterfly Module with Single Mode Fiber. Built-in Cooler, Isolator GENERAL DESCRIPTION OL4121N-120 is a 1480 nm Laser Diode in a butterfly package with single mode fiber .


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    PEDF4121N-120-01 OL4121N-120 nm/120 OL4121N-120 PDF

    OL4121N-120

    Abstract: No abstract text available
    Text: FEDF4121N-120-01 1Electronic Components OL4121N-120 This version: Mar. 2001 1480 nm/120 mW Laser Diode Butterfly Module with Single Mode Fiber. Built-in Cooler, Isolator GENERAL DESCRIPTION OL4121N-120 is a 1480 nm Laser Diode in a butterfly package with single mode fiber .


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    FEDF4121N-120-01 OL4121N-120 nm/120 OL4121N-120 PDF

    laser DFB 1490

    Abstract: No abstract text available
    Text: JOG-00979 OKI Electronics Components Preliminary OL492L Rev.1 [May 2002 ] 1480nm DFB Laser Diode Uncooled Coax Module with Single Mode Fiber, Built-in Isolator 1. DESCRIPTION OL492L is a 1480nm DFB Laser Diode in a panel Mountable coaxial package with single mode fiber


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    JOG-00979 OL492L 1480nm OL492L laser DFB 1490 PDF

    OL4121N-140

    Abstract: 1480 nm laser diode PEDF4121N-140-01
    Text: PEDF4121N-140-01 1Electronic Components OL4121N-140 This version: Mar. 2001 1480 nm/140 mW Laser Diode Butterfly Module with Single Mode Fiber. Built-in Cooler, Isolator GENERAL DESCRIPTION OL4121N-140 is a 1480 nm Laser Diode in a butterfly package with single mode fiber .


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    PEDF4121N-140-01 OL4121N-140 nm/140 OL4121N-140 1480 nm laser diode PEDF4121N-140-01 PDF

    S12 MARKING DIODE

    Abstract: S12 MARKING CODE DIODE SOD882 BAP55L
    Text: BAP55L Silicon PIN diode Rev. 01 — 5 April 2005 Preliminary data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small plastic SMD package. 1.2 Features • High speed switching for RF signals ■ Low diode capacitance


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    BAP55L OD882 sym006 S12 MARKING DIODE S12 MARKING CODE DIODE SOD882 BAP55L PDF

    ECONO2-6PACK IGBT module

    Abstract: IR E78996 GB50XF120K IGBT 6PACK MODULE IRF E78996 E78996 IR GB50XF120K ECONO-2
    Text: PD - 94567 GB50XF120K IGBT 6PACK MODULE Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient


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    GB50XF120K ECONO2-6PACK IGBT module IR E78996 GB50XF120K IGBT 6PACK MODULE IRF E78996 E78996 IR GB50XF120K ECONO-2 PDF

    NEC LASER DIODE butterfly package

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ NEC LASER DIODE MODULE NDL7540P 1480 nm OPTICAL FIBER APPLICATIONS InGaAsP MQW-DFB LASER DIODE MODULE FEATURES • InGaAsP Strained M Q W DC-PBH laser diode • H igh output power Pf=110mW @ !F=500m A CW • Internal optical isolator, therm o electric cooler and m onitor photo diode


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    NDL7540P 110mW 500mA -20dB) 10log 100mW 500mA NEC LASER DIODE butterfly package PDF

    670NM Laser-Diode

    Abstract: DL-3148-033
    Text: Ordering number : EN5860 Red Laser Diode D L -3 148-033 Index Guided AIGalnP Laser Diode Overview Package Dimensions The DL-3148-033 is index guided 635 nm Typ. AIGalnP laser diode with low threshold current and high operating temperature. The low threshold


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    EN5860 DL-3148-033 DL-3148-033 635nm 670nm 670NM Laser-Diode PDF

    Photocathode

    Abstract: intensifier XX1060 XX1210 XX1110 XX1190 cd 1191 XX1111 XX1112 XX1191
    Text: Image intensifier tubes Single stage Type X X 1110 XX1111 XX 1190 X X 1191 XX 1200 XX 1201 Configuration Tetrode Tetrode Diode Diode Diode Diode Focusing method electrostatic Input face plate Fiber optics, flat 38 25 25 18 18 Glass Fiber optics Glass useful 9 in mm


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    XX1110 XX1111 XX1191 Photocathode intensifier XX1060 XX1210 XX1190 cd 1191 XX1112 PDF

    BAS32

    Abstract: diode bas32 IEC134 BAS32 sod80
    Text: 41E D 711002b 00533bt. eSPHIN PHILIPS INTERNATIONAL BAS32 T-03-09 HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. This SM diode is a leadless diode in a h e rm e tica lly sealed SOD- 8 O envelope w ith tin -p la te d m etal discsat


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    711002b 00533bt. BAS32 T-03-09 diode bas32 IEC134 BAS32 sod80 PDF

    diode bas32

    Abstract: No abstract text available
    Text: BAS32 _ HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications.


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    BAS32 BAS32 OD-80 45ward diode bas32 PDF

    laser diode Spectral Width 1 nm, 1550 nm, power 2

    Abstract: No abstract text available
    Text: DATA SH E E T LASER DIODE NDL7553P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7553P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber.


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    NDL7553P 1550nm NDL7553P1 bMS752S L427525 laser diode Spectral Width 1 nm, 1550 nm, power 2 PDF

    300f diode

    Abstract: 300f SDA48
    Text: SSPll PRELIMINARY SDA48 SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 150 AMPS 50 VOLTS MATCHED POWER SCHOTTKY DIODE ARRAY Designer’s Data Sheet FEATURES: • Each diode is VF matched to within 20mV


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    SDA48 670-SSDI RS0217 300f diode 300f SDA48 PDF