AAY27
Abstract: AAY 45 germanium diode "Germanium Diode" germanium diode junction capacitance Q60101-Y
Text: AAY27 Germanium RF point-contact diode In addition to a high forward transconductance, the germanium diode AAY 27 displays small switching times and a good detector voltage efficiency at high frequencies. Therefore it is qualified for general purposes in RF as well as switching applications.
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AAY27
Q60101-Y
100pf
105kHz
AAY27
AAY 45
germanium diode
"Germanium Diode"
germanium diode junction capacitance
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6R130G
Abstract: No abstract text available
Text: 6-Pack Diode 600/800 V 30 A FU JI Erosoë POW ER DIODE M O DULE • O utline D raw ings Features A ll the te rm in a ls and the m o u n tin g plate are e le c tric a lly isolated. These m o d u le s can be in sta lle d in the sam e c o o lin g fin as o th e r m o d u le s, th u s saving in s ta lla tio n
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6RI30E-060/080
6R130G
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diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)
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D1JA20
Abstract: D1JA
Text: DIODE ARRAY D 1 J A 2 0 / D 1 J A 4 0 / D 1 J A 6 0 « F e a tu r e s Ä X 3 > -f- y 7" 4 *r i 9' 'i 1f — KöO Jf-7 X ' L t z r ^ i c — K Tw 'f T 'i -0 è h i »ÜicWfft, I t l ë a X I- a 7„ I- / < V + — > 7. j'Q;K L ì L t , •D 1 JA series are diode a rra y s consist of
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1N4003
D1JA20
D1JA
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Untitled
Abstract: No abstract text available
Text: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance
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BZD27C
DO-219AA
AEC-Q101
2011/65/EU
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
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Untitled
Abstract: No abstract text available
Text: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance
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BZD27C
DO-219AA
AEC-Q101
2011/65/EU
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
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bzd27c
Abstract: diode z62
Text: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA / M1F FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance
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BZD27C
DO-219AA
2002/95/EC
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
JESD22-B102.
diode z62
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BZD27C
Abstract: Z15 marking diode diode Z47 diode z36 cathode bzd27
Text: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA / M1F FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability Low differential resistance
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BZD27C
DO-219AA
2002/95/EC
2002/96/EC
J-STD-020,
MIL-STD-750
J-STD-002
JESD22-B102.
Z15 marking diode
diode Z47
diode z36
cathode bzd27
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
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BU2520DF
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z15 Diode glass
Abstract: zener diode z33 diode Z27 Zener diode z12 15 Z15 marking diode diode Z47 MARKING CODE 24Z MARKING Z68 24z diode Z68 MARKING
Text: BZD27C Series 0.8 W Surface Mount Glass Passivated Zener Diode Dimensions in mm. Voltage 11 to 240 V CASE: M1F DO219AA Power 0.8 W R • Silicon planar zener diodes • Low profile surface-mount package • Zener and surge curren specification • Low leakage curren
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BZD27C
DO219AA)
C200P
z15 Diode glass
zener diode z33
diode Z27
Zener diode z12 15
Z15 marking diode
diode Z47
MARKING CODE 24Z
MARKING Z68
24z diode
Z68 MARKING
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-Fotoelement Silicon Photovoltaic Cell BPY 64 P Diode and solder pads lacquered Strands soldered 1 Max. solder areas on fro n t and back side GS006636 Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specitied.
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GS006636
0HFQ1053
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65e9
Abstract: TB370 AN7254 AN7260 ITF86116SQT
Text: ITF86116SQT interrii 10A, 30 V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET mi J a n u a ry . Data Sheet File Number 4808.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.012£i, VGs = 10V Packaging ‘ rDS(ON) = 0.016£i, VGs = 4.5V TSSOP8 • Gate to Source Protection Diode
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ITF86116SQT
ITF86116SQT
65e9
TB370
AN7254
AN7260
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GCA200AA60
Abstract: SanRex GCA200AA60 rj25 2M167 H125 SANREX welding machine
Text: IGBT MODULE GCA200AA60 UL; E76102 M SanRex IG PT Module GCA200AA60 is designed for Large cur rent high speed switching. T his module is insulated type, and contains two IG B T s in a series configuration and a fa st recovery diode (trr = 100ns) anti-parallelly connected to each IG BT.
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GCA200AA60
GCA200AA60
100ns)
00A/Vces
00V/Vecs
E76102
95MAX
100/i
200/i
SanRex GCA200AA60
rj25
2M167
H125
SANREX welding machine
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SK 18752
Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,
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O03ED0
dete7837
H1-O03ED0-0805020NM
SK 18752
SK 18751
2SC5586
SI-18752
fn651
709332a
CTB-34D
SLA6102
SLA4052
SI 18751
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11505A
Abstract: diode zener 1n4002 10D10 diode 11708a 30S4 DIODE ir 10d10 diode 30S10 diode DIODE 10D1 34301a IR 10D4
Text: Sem iconductors International Rectifier Zener Diodes & Silicon Rectifiers 10 W a ffs a f 95‘C B a s e - 5 % toteran ce co n tin u e d RE F E R E N C E T A B L E Max. D C Zener Current Zener Voltage Type Stock No. 1028.2T5 10Z9.1T5 10Z10T5 10Z11T5 10Z12T5
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11701D
11702B
10Z10T5
It703X
10Z11T5
11704R
10Z12T5
11705G
10Z13T5
11706E
11505A
diode zener 1n4002
10D10 diode
11708a
30S4 DIODE
ir 10d10 diode
30S10 diode
DIODE 10D1
34301a
IR 10D4
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ske V04
Abstract: No abstract text available
Text: SEEö TECHNO LO GY IN C I TE D • Ö11T233 QGG2Sb7 4 ■ EEPLD 20 RA 10Z T - 4 b - t^ - m November 1989 Features ■ CMOS EEPLD with Zero Standby Power: • 10 pA Typical, 150 pA Maximum ■ Operating Power Rises at Less Than ■ ■ ■ ■ ■ 100 Reprogramming Cycles, Minimum
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11T233
20RA10Z
400065m
ske V04
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fgt313
Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Text: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156
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2SA1186
2SC4024
2SA1215
2SC4131
2SA1216
2SC4138
100VAC
2SA1294
2SC4140
fgt313
transistor fgt313
SLA4052
RG-2A Diode
SLA5222
fgt412
RBV-3006
FMN-1106S
SLA5096
diode ry2a
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fn651
Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Text: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102
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2SA744
2SA745
2SA746
2SA747
2SA764
2SA765
2SA768
2SA769
2SA770
2SA771
fn651
CTB-34D
2SC5586
hvr-1x7
STR20012
sap17n
2sd2619
RBV-4156B
SLA4037
2sk1343
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Varistor RU
Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
Varistor RU
SE110N
transistor
2SC5487
2SA2003
SE090N
high voltage transistor
SE090
RBV-406
2SC5586
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2SC5586
Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
2SC5586
transistor 2SC5586
diode RU 3AM
2SA2003
microwave oven diode
single phase bridge rectifier IC with output 1A
2SC5487
RG-2A Diode
Dual MOSFET 606
TFD312S-F
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CTX12S
Abstract: SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F
Text: <Semiconductor Discontinued and Service Parts> 2010.2.4 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102
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2SA744
2SA745
2SA746
2SA747
2SA764
2SA765
2SA768
2SA769
2SA770
2SA771
CTX12S
SLA4038
fn651
SLA4037
sla1004
CTB-34D
SAP17N
2SC5586
2SK1343
CTPG2F
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SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
SE012
SE090
SE140N
SE115N
diode
2SC5487
sta474a
8050e
SE110N
SLA-7611
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SE135N
Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Text: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1488
2SA1492
SE135N
SE110N
UX-C2B
SE140N
STR83159
SE130N
STR2012
Transistor AC 51
SE140
SE115N
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SE110N
Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1488
2SA1492
SE110N
A4032
SE130N
SE005N
SE090N
high hfe transistor
FMQG5FM
SLA7022M
SE012
3gu diode
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