C1060
Abstract: bookham diode 2 Wavelength Laser Diode C1060 Series b60c Nd-yag B60C-1060-01 emitter "1060 nm"
Text: Data Sheet Preliminary 60W 10xxnm High Power Bare Laser Diode Bar B60C-10xx-01 The Bookham B60C-10xx-01 50% fill factor laser diode bar has been designed to provide the increased brightness and reliability required for direct diode applications and as replacement for Nd:YAG lasers. The proprietary E2 front mirror
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10xxnm
B60C-10xx-01
B60C-10xx-01
1060nm
900-1060nm
21CFR
BH13574
C1060
bookham diode
2 Wavelength Laser Diode
C1060 Series
b60c
Nd-yag
B60C-1060-01
emitter "1060 nm"
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ltc4352iddpbf
Abstract: TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A 12-PIN LTC4352C LTC4352CDD LTC4352IDD
Text: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES DESCRIPTION n The LTC 4352 creates a near-ideal diode using an external N-channel MOSFET. It replaces a high power Schottky diode and the associated heat sink, saving power and board area. The ideal diode function permits low loss
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LTC4352
12-Pin
1TC4412HV
8V/36V,
TSOT-23
LTC4413/LTC4413-1
DFN-10
LTC4414
LTC4416/LTC4416-1
ltc4352iddpbf
TRANSISTOR mosfet 9V
LTC4352I
LTC4352
LTC4352IMS
Schottky Diode 80V 6A
LTC4352C
LTC4352CDD
LTC4352IDD
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H24 SMD DIODE
Abstract: electrical circuit diagram reverse forward move d 12v bulb 220 supply diagram
Text: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.
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BDD20101213
H24 SMD DIODE
electrical circuit diagram reverse forward move d
12v bulb 220 supply diagram
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Untitled
Abstract: No abstract text available
Text: PoE Ideal Diode Bridge PoE Data Pairs ±VIN1 EN + VOUT LT4321 – EN To PoE PD Controller PoE Spare ±VIN2 Pairs Active Diode Bridge Controller Minimizes Power Loss and Heat in Power over Ethernet Powered Device The LT 4321 ideal diode bridge controller replaces two diode bridge rectifiers with low loss N-channel MOSFET bridges to increase
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LT4321
LT4321
350mA
600mA
LT4275
com/4321
1-800-4-LINEAR
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2 Wavelength Laser Diode
Abstract: BAC110C-1030-01 BAC110C-1030-02 110W
Text: Data Sheet Preliminary 110W 10xxnm High Power Laser Diode Bar on Microchannel Cooler BAC110C-10xx-01/02 The Bookham BAC110C-10xx-01/02 50% fill factor laser diode bar on microchannel cooler series has been designed to provide the increased brightness and reliability required for
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10xxnm
BAC110C-10xx-01/02
BAC110C-10xx-01/02
900-1060nm
21CFR
BH13575
2 Wavelength Laser Diode
BAC110C-1030-01
BAC110C-1030-02
110W
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Untitled
Abstract: No abstract text available
Text: Comchip Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G N5 Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Silicon planar power Zener diode. -The Zener voltages are graded according to the international E24 standard, smaller voltage
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1N5221B-G
1N5267B-G
DO-35
012ounce,
33gram
-2X10
-4X10
10X10
QW-BZ001
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lx2400
Abstract: LX2400ILG IEC61215 ul 1741 photovoltaic module 5w LX2400 Microsemi photovoltaic module ul 1741 download pv dc/ac solar pv inverter
Text: PRODUCT BRIEF LX2400 IDEALSolar Bypass Diode DESCRIPTION Solar Bypass Diode for Photovoltaic PV Modules with Industry’s Lowest Forward Voltage Drop and Lowest Operating Temperature The LX2400 IDEALSolarTM Bypass Diode with Microsemi’s patented CoolRUNTM technology provides a bypass path in PV
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LX2400
LX2400
120VAC
240VAC
LX2400ILG
LX2400ILG
IEC61215
ul 1741
photovoltaic module 5w
LX2400 Microsemi
photovoltaic module
ul 1741 download
pv dc/ac
solar pv inverter
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Untitled
Abstract: No abstract text available
Text: LTC4229 Ideal Diode and Hot Swap Controller Features Description Ideal Diode and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diode n Protects Output Voltage from Input Brownouts n Allows Safe Hot Swapping from a Live Backplane
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LTC4229
24-Lead
MSOP-16
DFN-16
LTC4353
LTC4355
SO-16,
DFN-14
MSOP-16
LTC4357
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MOSFET TOSHIBA 2015
Abstract: No abstract text available
Text: 2015 Super 12 Products SiHP33N60EF / EF Series High-Voltage MOSFETs SiHP33N60EF / EF Series HV Fast Body Diode Power MOSFET Offers up to 10x Reduction in Qrr • Features: • Based on E Series Super Junction technology • Fast body diode provides as much as 10x reduction in Qrr over
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SiHP33N60EF
MOSFET TOSHIBA 2015
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LTC4416
Abstract: No abstract text available
Text: LTC4353 Dual Low Voltage Ideal Diode Controller FEATURES n n n n n n n DESCRIPTION The LTC 4353 controls external N-channel MOSFETs to implement an ideal diode function. It replaces two high power Schottky diodes and their associated heat sinks, saving power and board area. The ideal diode function
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LTC4353
16-Lead
LTC4353
DFN-10
DFN-10
LTC4414
LTC4415
MSOP-16
DFN-16
LTC4416/LTC4416-1
LTC4416
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Untitled
Abstract: No abstract text available
Text: Data Sheet Preliminary 40W 10xxnm 30% Fill Factor High Power Laser Diode Bar on Passive Cu Block Cooler BPC40C-10xx-01 The Bookham BPC40C-10xx-01 30% fill factor laser diode bar on passive cooler series has been designed to provide the high brightness and reliability required for both medical and direct
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10xxnm
BPC40C-10xx-01
BPC40C-10xx-01
60825-Edition
1070nm
21CFR
BH13305
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C1060
Abstract: Transistor C1060 C1060 transistor 2 Wavelength Laser Diode BPC40C-1060-01 bookham diode
Text: Data Sheet Preliminary 40W 10xxnm 30% Fill Factor High Power Laser Diode Bar on Passive Cu Block Cooler BPC40C-10xx-01 The Bookham BPC40C-10xx-01 30% fill factor laser diode bar on passive cooler series has been designed to provide the high brightness and reliability required for both medical and direct
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10xxnm
BPC40C-10xx-01
BPC40C-10xx-01
60825-Edition
1070nm
21CFR
BH13305
C1060
Transistor C1060
C1060 transistor
2 Wavelength Laser Diode
BPC40C-1060-01
bookham diode
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pesd3v3l2um
Abstract: SC-101
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PESDxL2UM series Low capacitance double ESD protection diode Product specification 2003 Aug 05 Philips Semiconductors Product specification Low capacitance double ESD protection diode PESDxL2UM series FEATURES
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M3D883
OT883
SCA75
613514/01/pp9
pesd3v3l2um
SC-101
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diode marking code cz
Abstract: marking code e6
Text: DISCRETE SEMICONDUCTORS DATA SHEET PESD5V0S1BA Low capacitance bi-directional ESD protection diode in SOD323 Product specification 2004 Mar 22 Philips Semiconductors Product specification Low capacitance bi-directional ESD protection diode in SOD323 PESD5V0S1BA
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OD323
IEC-61000-4-5
SCA76
R76/01/pp11
diode marking code cz
marking code e6
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smbj15a
Abstract: No abstract text available
Text: Part: SMBJ15A Series: SMBJ Series - 600W Surface Mount TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount PROTECTS AGAINST: Mount Method Mount Surface Mount Lightning Transients Maximum Reverse Leakage Current
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SMBJ15A
10x1000
10x1000Â
10x160Â
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Untitled
Abstract: No abstract text available
Text: Part: P6SMBJ8.2CA Series: 600W Surface Mount TVS Diode - P6SMBJ Series Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount PROTECTS AGAINST: Mount Method Mount Surface Mount Lightning Transients Maximum Reverse Leakage Current
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10x160Â
10x1000
10x1000Â
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SMBJ13CA
Abstract: No abstract text available
Text: Part: SMBJ13CA Series: SMBJ Series - 600W Surface Mount TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount PROTECTS AGAINST: Mount Method Mount Surface Mount Lightning Transients Maximum Reverse Leakage Current
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SMBJ13CA
10x1000
10x1000Â
10x160Â
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Untitled
Abstract: No abstract text available
Text: Part: 15KP20 Series: 15000W Axial Leaded TVS Diode - 15KP Series Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded PROTECTS AGAINST: Mount Method Mount Through Hole Lightning Transients Maximum Reverse Leakage Current
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15KP20
5000W
10x1000
10x1000Â
10x160Â
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15kp28a, 15000W
Abstract: No abstract text available
Text: Part: 15KP28A Series: 15000W Axial Leaded TVS Diode - 15KP Series Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded PROTECTS AGAINST: Mount Method Mount Through Hole Lightning Transients Maximum Reverse Leakage Current
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15KP28A
5000W
10x1000
10x1000Â
10x160Â
15kp28a, 15000W
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BR 8550
Abstract: No abstract text available
Text: Part: P6SMBJ100A Series: 600W Surface Mount TVS Diode - P6SMBJ Series Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount PROTECTS AGAINST: Mount Method Mount Surface Mount Lightning Transients Maximum Reverse Leakage Current
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P6SMBJ100A
/sub0x160Â
10x1000
10x1000Â
10x160Â
BR 8550
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Untitled
Abstract: No abstract text available
Text: Part: 15KP45A Series: 15000W Axial Leaded TVS Diode - 15KP Series Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded PROTECTS AGAINST: Mount Method Mount Through Hole Lightning Transients Maximum Reverse Leakage Current
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15KP45A
5000W
10x1000
10x1000Â
10x160Â
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Untitled
Abstract: No abstract text available
Text: Part: 15KP28CA Series: 15000W Axial Leaded TVS Diode - 15KP Series Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded PROTECTS AGAINST: Mount Method Mount Through Hole Lightning Transients Maximum Reverse Leakage Current
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15KP28CA
5000W
10x1000
10x1000Â
10x160Â
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CVD-450
Abstract: Laser Diode 808 nm
Text: LASER DIODE INC 1SE D I Sl&EI&B DODDMSl 5 I T -fh O f C VD-400 SERIES LASER DIODE, INC. QUASI CW LASER DIODE ARRAYS FEATURES: ► ► ► ► ► ► ► DESCRIPTION: The CVD-400 series lasers are Gallium Aluminum Arse nide Monolithic Quantum Well Arrays made by MOCVD
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VD-400
CVD-400
CVD-450
Laser Diode 808 nm
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Untitled
Abstract: No abstract text available
Text: SIEMENS a-ß-7-StrahlungsdetektOren a-ß-y-Radiation Detectors SFH 521 SFH 521 A /3 1.1 1) ^ <L£ .2.0 1.6 ^ GS006875 1) M etallized electrode fla n k s 2) Active a re a o f diode 10x10 3) Diode epoxy sealed SFH 521 A) or open with protective bond w ire (SFH 521)
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GS006875
10x10
fi47S
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