Untitled
Abstract: No abstract text available
Text: ON Semiconductort Silicon Tuning Diode MMBV432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top−of−the−line application requiring back−to−back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT−23 plastic package for
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OT-23
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D4457N
Abstract: D2228N D448N D5807N D5809N D758N KC30 613
Text: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]
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D448N
D2228N
D5809N
D4457N
D2228N
D448N
D5807N
D5809N
D758N
KC30 613
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D2228N
Abstract: D448N D5809N D758N thyristor 1651
Text: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl
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D448N
D758N
D2228N
D5809N
D2228N
D448N
D5809N
D758N
thyristor 1651
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BC237
Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
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1SS383T1
2N3819
2N3903,
2N3904
2N3906
2N4401
2N4403
2N5087
2N5088,
2N5089
BC237
BC847BPDW1T1 Series
BC548
low noise transistors bc638
cbc550c
BC307
2N5550* surface mount
BC212
BSR58LT1
NSDEMN11XV6T1
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3C91C
Abstract: 3C92C 3c92
Text: 3C91C/ 3C92C TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The 3C91C/3C92C consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4 lead hermetically sealed metal can. Applications
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3C91C/
3C92C
3C91C/3C92C
3C91C
D-74025
3C91C
3C92C
3c92
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CNY18V
Abstract: CNY18IV CNY18 CNY18III
Text: CNY18 Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for high reliability requirements. 96 12257
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CNY18
CNY18
CNY18III
CNY18IV
CNY18V
11-Jun-96
D-74025
CNY18V
CNY18IV
CNY18III
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RFN20NS3S
Abstract: RFN20 RFN20N RFN-20 RFN20 DIODE RFN20NS3 RFN20-NS3S TO-263s
Text: RFN20NS3S Data Sheet Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zDimensions Unit : mm zLand Size Figure(Unit : mm) RFN20 NS3S zApplications General rectification 䐟㻌 zFeatures 1)Low switching loss 2)High current overload capacity
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RFN20NS3S
RFN20
O263S
R1120A
RFN20NS3S
RFN20N
RFN-20
RFN20 DIODE
RFN20NS3
RFN20-NS3S
TO-263s
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cny18
Abstract: Telefunken Phototransistor
Text: CNY18 TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically sealed 4 lead TO72 metal can package for high reliability requirements.
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CNY18
CNY18
D-74025
Telefunken Phototransistor
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4n25 schematic
Abstract: 4N25 4N25 TEMIC 4N25 applications 4N26 4N25-28 4N27 IC 4N25 4n25 application Control 4N25
Text: TELEFUNKEN Semiconductors 4N25/ 4N26/ 4N27/ 4N28 Optocoupler with Phototransistor Output Description The 4N25/ 26/ 27/ 28 consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages.
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E-76222
D-74025
4n25 schematic
4N25
4N25 TEMIC
4N25 applications
4N26
4N25-28
4N27
IC 4N25
4n25 application
Control 4N25
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4N27
Abstract: 4N25 4N26 4N28 4N25 applications
Text: 4N25/ 4N26/ 4N27/ 4N28 Vishay Semiconductors Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline package.
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E-76222
D-74025
4N27
4N25
4N26
4N28
4N25 applications
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Untitled
Abstract: No abstract text available
Text: Data Sheet Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zDimensions Unit : mm zLand Size Figure(Unit : mm) RFN20 NS3S zApplications General rectification 䐟㻌 zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure
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RFN20NS3S
RFN20
O263S
R1120A
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3C91C
Abstract: 3C91C telefunken 3C92C 3c91
Text: 3C91C/ 3C92C Optocoupler with Phototransistor Output Description The 3C91C/ 3C92C consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead hermetically sealed metal can. Applications Galvanically separated circuits for general purposes
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3C91C/
3C92C
3C92C
3C91C
10-Dec-96
D-74025
3C91C
3C91C telefunken
3c91
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RFN20
Abstract: RFN20 DIODE rfn20n d0835
Text: Data Sheet Super Fast Recovery Diode RFN20NS3S zSerise Standard Fast Recovery zDimensions Unit : mm zLand Size Figure(Unit : mm) RFN20 NS3S zApplications General rectification 䐟㻌 zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure
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RFN20NS3S
RFN20
O263S
R1120A
RFN20 DIODE
rfn20n
d0835
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RFN20NS3
Abstract: No abstract text available
Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20NS3SFH zSerise Standard Fast Recovery zLand Size Figure Unit : mm zDimensions(Unit : mm) RFN20 NS3S zApplications General rectification 䐟㻌 zFeatures 1)Low switching loss 2)High current overload capacity
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AEC-Q101
RFN20NS3SFH
RFN20
O263S
R1120A
RFN20NS3
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diode laser bragg
Abstract: GaAs diode nm TEM00
Text: Version 0.90 29.04.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED BRAGG REFLECTOR LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL PRELIMINARY SPECIFICATION DBR Laser EYP-DBR-1080-00080-2000-TOC03-0000 General Product Information
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EYP-DBR-1080-00080-2000-TOC03-0000
diode laser bragg
GaAs diode nm
TEM00
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diode 1079
Abstract: medical application of laser semiconductor laser 1064 nm laser diode
Text: Version 0.90 08.04.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-1064-08000-4020-CMT04-0000 General Product Information Product Application
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EYP-BAL-1064-08000-4020-CMT04-0000
diode 1079
medical application of laser
semiconductor laser
1064 nm laser diode
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diode 47-16
Abstract: T1929N T380N T869N diode 4.7-16 M6-C
Text: M6C - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D
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T380N
T869N
T1929N
diode 47-16
T1929N
T380N
T869N
diode 4.7-16
M6-C
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laser diode lifetime
Abstract: diode laser bragg TEM00 Thermistor 200 dbr laser
Text: Version 0.90 29.04.2008 page: 1 from 4 DFB/DBR TPL/TPA DISTRIBUTED BRAGG REFLECTOR LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL PRELIMINARY SPECIFICATION BAL DFB/DBR Laser EYP-DBR-1080-00020-2000-BFY02-0000 General Product Information
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EYP-DBR-1080-00020-2000-BFY02-0000
laser diode lifetime
diode laser bragg
TEM00
Thermistor 200
dbr laser
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TCST2000
Abstract: TCST-2000 TCST1000 Telefunken Phototransistor
Text: TCST1000/TCST2000 TELEFUNKEN Semiconductors Optoelectronic Interrupter with Aperture Description The TCST1000/TCST2000 consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages. The elements are mounted on one leadframe in coplanar
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TCST1000/TCST2000
TCST1000/TCST2000
D-74025
TCST2000
TCST-2000
TCST1000
Telefunken Phototransistor
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Untitled
Abstract: No abstract text available
Text: AON6758 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Integrated Schottky Diode (SRFET) • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
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AON6758
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4N25GV
Abstract: 4N25V 4N35V 4N35GV
Text: 4N25V G / 4N35V(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The 4N25V(G)/ 4N35V(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline
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4N25V
4N35V
D-74025
12-Dec-97
4N25GV
4N35GV
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4N25
Abstract: 4N26 4N27 4N28 4N25-28
Text: 4N25/ 4N26/ 4N27/ 4N28 Optocoupler with Phototransistor Output Description The 4N25/ 26/ 27/ 28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a
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E-76222
D-74025
12-Dec-97
4N25
4N26
4N27
4N28
4N25-28
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4n25 vishay
Abstract: No abstract text available
Text: 4N25/ 4N26/ 4N27/ 4N28 Vishay Telefunken Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline package. The elements are mounted on one leadframe using
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E-76222
D-74025
4n25 vishay
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Z1073
Abstract: z1071 z1072 DIODE BZX C9VI Z1075 83C12 83C10 83C13 DIODE BZX 83
Text: BZX83 Silicon Z diode for 500 mW BZX 83 is an epitaxial silicon planar Z diode in a glass case 56 A 2 DIN 41883 D O -35 . It is used for the stabilization and limitation of voltages as well as for the generation of reference voltages at low power requirements.
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BZX83
DO-35)
Q62702
Q62702-Q62702â
Q62702I_
Z1073
z1071
z1072
DIODE BZX
C9VI
Z1075
83C12
83C10
83C13
DIODE BZX 83
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