C10V
Abstract: C25V SVC333 IN 4004 diode diode IN 4004 3662 diode
Text: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode
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EN935B
SVC333
SVC333
SVC333]
C10V
C25V
IN 4004 diode
diode IN 4004
3662 diode
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BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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BAS70L
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
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M3D891
BAS70L
OD882
MDB391
SCA75
613514/01/pp8
BAS70L
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1PS10SB63
Abstract: MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW 1PS10SB63 Schottky barrier diode Product specification 2003 Aug 20 Philips Semiconductors Product specification Schottky barrier diode 1PS10SB63 FEATURES DESCRIPTION • Very low diode capacitance An epitaxial Schottky barrier diode encapsulated in a
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M3D891
1PS10SB63
OD882
MDB391
SCA75
613514/01/pp7
1PS10SB63
MARKING S4 diode schottky
MLE118
S4 DIODE schottky
Schottky barrier sot-23 Marking s4
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BAV70-GS18
Abstract: BAL99 BAV70 BAV70-GS08 BAV99 BAW56
Text: BAV70 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with
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BAV70
BAV99,
BAW56,
BAL99.
OT-23
BAV70-GS18
BAV70-GS08
D-74025
09-Jul-04
BAL99
BAV70
BAV70-GS08
BAV99
BAW56
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Untitled
Abstract: No abstract text available
Text: BAW56 VISHAY Vishay Semiconductors Dual Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a
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BAW56
BAL99,
BAV99,
BAV70.
OT-23
BAW56
BAW56-GS18
BAW56-GS08
D-74025
27-Apr-04
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Untitled
Abstract: No abstract text available
Text: BAW56-V www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon epitaxial planar diode 3 • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type
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BAW56-V
BAL99,
BAV99,
BAV70
AEC-Q101
OT-23
GS18/10K
10K/box
GS08/3K
15K/box
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BAS40L
Abstract: marking code s6 SOD-882L
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
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M3D891
BAS40L
OD882
MDB391
SCA75
613514/01/pp8
BAS40L
marking code s6
SOD-882L
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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SOT23 DIODE marking CODE AV
Abstract: No abstract text available
Text: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
SOT23 DIODE marking CODE AV
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BAW56 GS18
Abstract: marking code JD BAW56 BAL99 BAV70 BAV99 BAW56 BAW56-GS08
Text: BAW56 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a
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BAW56
BAL99,
BAV99,
BAV70.
OT-23
BAW56-GS18
BAW56-GS08
D-74025
09-Jul-04
BAW56 GS18
marking code JD BAW56
BAL99
BAV70
BAV99
BAW56
BAW56-GS08
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Untitled
Abstract: No abstract text available
Text: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
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Untitled
Abstract: No abstract text available
Text: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF
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PDF
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
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|
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Untitled
Abstract: No abstract text available
Text: BAV70-V www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon Epitaxial Planar Diode 3 1 • Fast switching dual diode with common cathode 2 18108 • This diode is also available in other configurations including: a dual with type
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BAV70-V
BAV99-V,
BAW56-V,
BAL99-V
AEC-Q101
OT-23
GS18/10K
10K/box
GS08/3K
15K/box
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BAV70 SOT-23 JJ
Abstract: sot23 code JJ Diode 1S 133 Marking code JJ
Text: BAV70 Vishay Semiconductors formerly General Semiconductor Dual Small-Signal Diode TO-236AB SOT-23 Features .122 (3.1) .110 (2.8) .016 (0.4) • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations
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BAV70
O-236AB
OT-23)
BAV99,
BAW56,
BAL99.
OT-23
E8/10K
30K/box
30K/boxCondition
BAV70 SOT-23 JJ
sot23 code JJ
Diode 1S 133
Marking code JJ
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BAP50LX
Abstract: SMD MARKING CODE M 4 Diode
Text: BAP50LX Silicon PIN diode Rev. 01 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description General purpose PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • Low diode capacitance ■ Low diode forward resistance
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BAP50LX
OD882T
sym006
BAP50LX
SMD MARKING CODE M 4 Diode
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data sheet for all smd components
Abstract: DIODE marking S4 06 HD radio nxp application BAP50-03 SC-76 BAP50
Text: BAP50-03 General purpose PIN diode Rev. 04 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description General purpose PIN diode in a SOD323 small plastic SMD package. 1.2 Features • Low diode capacitance ■ Low diode forward resistance
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BAP50-03
OD323
sym006
SC-76
OD323
BAP50-03
data sheet for all smd components
DIODE marking S4 06
HD radio nxp application
SC-76
BAP50
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1n4448w-v
Abstract: No abstract text available
Text: 1N4448W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448
AEC-Q101
OD-123
GS18/10K
10K/box
1n4448w-v
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105386
Abstract: dek 1.5 47346-0001 WDK 2.5 105366 105396 105446 WDK 4N 10-588 102260
Text: Feed Through Terminals WDK 2.5 D WDK 2.5 D Diode terminal for lamp test circuits Diode terminal for lamp test circuits Branch with Diode Branch with Diode WDK 2.5 LD WDK 2.5 LD Branch with LED Branch with LED Terminal Block Selection Data Available Options
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4N/10
4N/41
105386
dek 1.5
47346-0001
WDK 2.5
105366
105396
105446
WDK 4N
10-588
102260
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Untitled
Abstract: No abstract text available
Text: 1N4448W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the
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1N4448W-V
DO-35
1N4448,
LL4448,
OT-23
IMBD4448
AEC-Q101
OD-123
GS18/10K
10K/box
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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OCR Scan
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PDF
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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25-12io8
Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
|
OCR Scan
|
PDF
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K21-0120
K21-01S0
K21-0180
K21-0265
K41-0150C
25-12io8
MDC 1200
DIODE mdc 40-14
MCO 1510
MCd 25-04
ABB thyristor modules
ASEA thyristor
mdc 55-04
hs 50 abb
E72873
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Thyristor MCD
Abstract: mdc 90-12 ABB thyristor modules 90-08io8 DIODE REDRESSEMENT mcd 132
Text: A S E A BROüJN/ABB ~fl3 FI Dcmfl30ó QQoans E F SEMICON • Netz-Thyristor-Diode-Module _ _ 1 T— 25-23 S 3 f£ v ~ : B ES Phase control Thyristor-Diode-Modules Daten pro Diode Oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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OCR Scan
|
PDF
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K21-0120
K21-0180
K41-0150
K41-0150
Thyristor MCD
mdc 90-12
ABB thyristor modules
90-08io8
DIODE REDRESSEMENT
mcd 132
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