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    DIODE 100V 10A Search Results

    DIODE 100V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 100V 10A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 100V,20A Low RDS ON Nch Trench Power MOS FET FKG1020 Dec. 2012 Features Package  VDS-100V ID-20A  RDS(ON) -33m typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220F


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    FKG1020 VDS-------------------------100V ID----------------------------20A --------------------33m O220F PDF

    Untitled

    Abstract: No abstract text available
    Text: 100V,20A Low RDS ON Nch Trench Power MOS FET EKG1020 Dec. 2012 Features Package  VDS-100V ID-20A  RDS(ON) -33m typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220


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    EKG1020 VDS-------------------------100V ID----------------------------20A --------------------33m PDF

    100V 100A mos fet

    Abstract: No abstract text available
    Text: 100V,20A Low RDS ON Nch Trench Power MOS FET FKG1020 Dec. 2012 Features Package  VDS-100V ID-20A  RDS(ON) -33mΩ typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220F


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    FKG1020 VDS-------------------------100V ID----------------------------20A --------------------33m O220F 100V 100A mos fet PDF

    Untitled

    Abstract: No abstract text available
    Text: 100V,20A Low RDS ON Nch Trench Power MOS FET EKG1020 Dec. 2012 Features Package  VDS-100V ID-20A  RDS(ON) -33mΩ typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220


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    EKG1020 VDS-------------------------100V ID----------------------------20A --------------------33m PDF

    YA872C10R

    Abstract: diode 100v 10a
    Text: http://www.fujisemi.com YA872C10R 100V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C10 YA872C10


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    YA872C10R O-220AB YA872C10 YA872C10R diode 100v 10a PDF

    diode 100v 10a

    Abstract: No abstract text available
    Text: http://www.fujisemi.com YG872C10R 100V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F Applications


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    YG872C10R O-220F diode 100v 10a PDF

    diode sy 710

    Abstract: SBR100-10JS
    Text: SBR100-10JS Ordering number : ENA0560 SANYO Semiconductors DATA SHEET SBR100-10JS Schottky Barrier Diode Twin Type • Cathode Common 100V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features


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    SBR100-10JS ENA0560 10scribed A0560-3/3 diode sy 710 SBR100-10JS PDF

    Untitled

    Abstract: No abstract text available
    Text: SBR100-10JS Ordering number : ENA0560 SANYO Semiconductors DATA SHEET SBR100-10JS Schottky Barrier Diode Twin Type • Cathode Common 100V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features


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    ENA0560 SBR100-10JS A0560-3/3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBT100-10G Ordering number : ENA0689 SANYO Semiconductors DATA SHEET SBT100-10G Schottky Barrier Diode Twin Type • Cathode Common 100V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features •


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    SBT100-10G ENA0689 A0689-3/3 PDF

    SBT100-10G

    Abstract: No abstract text available
    Text: SBT100-10G Ordering number : ENA0689 SANYO Semiconductors DATA SHEET SBT100-10G Schottky Barrier Diode Twin Type • Cathode Common 100V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features •


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    SBT100-10G ENA0689 A0689-3/3 SBT100-10G PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN7450 SBR100-10J Schottky Barrier Diode Twin Type • Cathode Common SBR100-10J 100V, 10A Rectifier Application • Package Dimensions High frequency rectification (switching regulators, converters, choppers). unit : mm 1320 [SBR100-10J]


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    ENN7450 SBR100-10J SBR100-10J] PDF

    SBR100-10J

    Abstract: No abstract text available
    Text: Ordering number : ENN7450 SBR100-10J Schottky Barrier Diode Twin Type • Cathode Common SBR100-10J 100V, 10A Rectifier Application • Package Dimensions High frequency rectification (switching regulators, converters, choppers). unit : mm 1320 [SBR100-10J]


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    ENN7450 SBR100-10J SBR100-10J] SBR100-10J PDF

    sanken power transistor

    Abstract: CF35 FMEN-220A sanken DSA0016518 Sanken catalog "Sanken Rectifiers"
    Text: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters


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    FMEN-220A Package---TO220F FMEN-220A 0E-01 D01-010EA-060310 sanken power transistor CF35 sanken DSA0016518 Sanken catalog "Sanken Rectifiers" PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode FMEN-220A March, 2006 General Description Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters


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    FMEN-220A Package---TO220F FMEN-220A D01-010EA-060310 PDF

    FMEN-220A

    Abstract: No abstract text available
    Text: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters


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    FMEN-220A Package---TO220F FMEN-220A 0E-01 D01-010EA-060310 PDF

    MBRD10U100

    Abstract: 10a45
    Text: SEMICONDUCTOR MBRD10U100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ・Average Output Rectified Current K D L : IO=10A. ・Repetitive Peak Reverse Voltage B : VRRM=100V.


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    MBRD10U100CT MBRD10U100 10a45 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR B10A100VIC TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=10A Tc=110 . Repetitive Peak Reverse Voltage : VRRM=100V.


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    B10A100VIC PDF

    MBRF10U100CTA

    Abstract: mbrf10u100ct
    Text: SEMICONDUCTOR MBRF10U100CTA TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES ・Average Output Rectified Current DIM B E G : IO=10A. ・Repetitive Peak Reverse Voltage : VRRM=100V.


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    MBRF10U100CTA MBRF10U100CTA mbrf10u100ct PDF

    mbrf*10u100ct

    Abstract: mbrf10u100ct TO220I mbrf10u100
    Text: SEMICONDUCTOR MBRF10U100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current DIM B E G : IO=10A. Repetitive Peak Reverse Voltage : VRRM=100V.


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    MBRF10U100CT mbrf*10u100ct mbrf10u100ct TO220I mbrf10u100 PDF

    MBRF10100CT

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MBRF10100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current B E G : IO=10A. Repetitive Peak Reverse Voltage : VRRM=100V. K


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    MBRF10100CT MBRF10100CT PDF

    V1660

    Abstract: B10A100VIC
    Text: SEMICONDUCTOR B10A100VIC TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE STACK SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=10A Tc=120 . Repetitive Peak Reverse Voltage : VRRM=100V.


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    B10A100VIC V1660 B10A100VIC PDF

    mbrf*10u100ct

    Abstract: mbrf10u100
    Text: SEMICONDUCTOR MBRF10U100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. C F A O FEATURES Average Output Rectified Current DIM B E G : IO=10A. Repetitive Peak Reverse Voltage : VRRM=100V.


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    MBRF10U100CT mbrf*10u100ct mbrf10u100 PDF

    dc power supply mbr10100ct Schottky diode

    Abstract: MBR10100CT
    Text: SEMICONDUCTOR MBR10100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A O FEATURES C F Average Output Rectified Current E : IO=10A. G B Repetitive Peak Reverse Voltage Q : VRRM=100V. I


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    MBR10100CT dc power supply mbr10100ct Schottky diode MBR10100CT PDF

    Z3PK10100DH

    Abstract: No abstract text available
    Text: ZOWIE Schottky Barrier Diode 100V / 10A Z3PK10100DH OUTLINE DIMENSIONS Case : Z3PAK FEATURES * * * * * * Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF


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    Z3PK10100DH Z3PK10100DH PDF