ixys dsei 2x30
Abstract: DSEI IXYS 2x31 IXYS DSEI 2 DSEI 20-01 A
Text: DSEI 2x30 DSEI 2x31 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 1000 1000 IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 30-10P DSEI 2x 31-10P 2x30 2x31 D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM
|
Original
|
30-10P
31-10P
ixys dsei 2x30
DSEI IXYS 2x31
IXYS DSEI 2
DSEI 20-01 A
|
PDF
|
30-10AR
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED DSEI 30 VRSM A 1000 1000 Type C ISOPLUS 247TM TO-247 AD Version A Version AR V 1000 1000 DSEI 30-10A DSEI 30-10AR C C A A C (TAB) A = Anode, C = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM
|
Original
|
247TM
O-247
0-10A
30-10AR
30-10AR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RURG80100 November 2013 Data Sheet 80 A, 1000 V, Ultrafast Diode Features • Ultrafast Recovery trr = 200 ns @ IF = 80 A • Max Forward Voltage, VF = 1.9 V (@ TC = 25°C) Description • 1000 V Reverse Voltage and High Reliability The RURG80100 is an ultrafast diode with low forward
|
Original
|
RURG80100
RURG80100
|
PDF
|
dsei 2x60
Abstract: IXYS DSEI 2X61 IXYS DSEI 2 ixys dsei IXYS DSEI 2X
Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
|
Original
|
61-10P
dsei 2x60
IXYS DSEI 2X61
IXYS DSEI 2
ixys dsei
IXYS DSEI 2X
|
PDF
|
17n100a
Abstract: NC2030 17N100AU1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
N100U1
N100AU1
17N100U1
17N100AU1
17n100a
NC2030
17N100AU1
|
PDF
|
10N100U1
Abstract: N100A ixgh 1500
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
N100U1
N100AU1
10N100U1
10N100AU1
10N100U1
N100A
ixgh 1500
|
PDF
|
fast recovery diode 600v 5A
Abstract: HUR30100PT HUR30120PT
Text: HUR30100PT, HUR30120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR30100PT HUR30120PT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM
|
Original
|
HUR30100PT,
HUR30120PT
O-247AD
HUR30100PT
125oC;
180uH
10kHz;
fast recovery diode 600v 5A
HUR30100PT
HUR30120PT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A V 1000 VRRM Type C IFAVM = 60 A VRRM = 1000 V trr = 35 ns TO-247 AD V 1000 C DSEI 60-10A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 60°C; rectangular, d = 0.5
|
Original
|
O-247
0-10A
|
PDF
|
ixgh 1500
Abstract: 17N100U1 17N100AU1 AC motor speed control 17n10
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
N100U1
N100AU1
17N100AU1
17N100U1
ixgh 1500
17N100U1
17N100AU1
AC motor speed control
17n10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED VRSM V 1000 VRRM DSEI 12 IFAVM = 12 A VRRM = 1000 V = 50 ns trr C A Type TO-220 AC V 1000 DSEI 12-10A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM
|
Original
|
O-220
2-10A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED VRSM V 1000 VRRM DSEI 60 IFAVM = 60 A VRRM = 1000 V = 35 ns trr C A Type TO-247 AD V 1000 DSEI 60-10A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 60°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM
|
Original
|
O-247
0-10A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED VRSM V 1000 VRRM DSEI 30 IFAVM = 30 A VRRM = 1000 V = 35 ns trr C A Type TO-247 AD V 1000 DSEI 30-10A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM
|
Original
|
O-247
0-10A
|
PDF
|
IXYS 12-10A
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED DSEI 12 VRSM A V VRRM Type C IFAVM = 12 A VRRM = 1000 V trr = 50 ns TO-220 AC C V A 1000 1000 DSEI 12-10A C A = Anode, C = Cathode Test Conditions IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM
|
Original
|
O-220
2-10A
IXYS 12-10A
|
PDF
|
2x31-10b
Abstract: ixys dsei 2x31-10b
Text: DSEI 2x30-10P IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 Type DSEI 2x 30-10P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
|
Original
|
2x30-10P
30-10P
2x31-10P,
2x31-10B
20070731a
2x31-10b
ixys dsei 2x31-10b
|
PDF
|
|
|
5SLD1000N330300
Abstract: 5SYA2039 diode in 400 1000N330300 UC1250
Text: Data Sheet, Doc. No. 5SYA 1419-03 06-2012 5SLD 1000N330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
|
Original
|
1000N330300
CH-5600
5SLD1000N330300
5SYA2039
diode in 400
UC1250
|
PDF
|
25N100
Abstract: IXGH25N100AU1 IXGH25N100U1 25N100U
Text: Preliminary data Low VCE sat High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 VCE(sat) 50 A 50 A 3.5 V 4.0 V TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
IXGH25N100U1
IXGH25N100AU1
O-247
IXGH25N100AU1
25N100
25N100U
|
PDF
|
35N100U1
Abstract: IXSN35N100U1
Text: IGBT with Diode IXSN 35N100U1 VCES IC25 VCE sat = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 A VGES Continuous ±20
|
Original
|
35N100U1
OT-227
35N100U1
IXSN35N100U1
|
PDF
|
HUR29100
Abstract: HUR29120 600v 30A fast recovery diode
Text: HUR29100, HUR29120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR29100 HUR29120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G
|
Original
|
HUR29100,
HUR29120
O-220AC
HUR29100
HUR29100
HUR29120
600v 30A fast recovery diode
|
PDF
|
1N3768
Abstract: 1N3765 1N3766 1N3767 1N3768R
Text: 1N3765 thru 1N3768R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 R 1N3766 (R) 1N3767 (R) 1N3768 (R)
|
Original
|
1N3765
1N3768R
1N3765
1N3766
1N3767
1N3768
1N3768
1N3766
1N3767
1N3768R
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FR30K05 thru FR30MR05 Silicon Fast Recovery Diode VRRM = 800 V - 1000 V IF = 30 A Features • High Surge Capability • Types from 800 V to 1000 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.
|
Original
|
FR30K05
FR30MR05
FR30K
FR30M
DO-203AB)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FR12K05 thru FR12MR05 Silicon Fast Recovery Diode VRRM = 800 V - 1000 V IF = 12 A Features • High Surge Capability • Types from 800 V to 1000 V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.
|
Original
|
FR12K05
FR12MR05
FR12K
FR12M
R12K05
DO-203AA)
|
PDF
|
Epitaxial Diode FRED VRRM 1200 V 40 ns
Abstract: fast recovery diode 600v 120a
Text: HUR2x60-100, HUR2x60-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP HUR2x60-100 HUR2x60-120 VRSM V 1000 1200 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B
|
Original
|
HUR2x60-100,
HUR2x60-120
OT-227
HUR2x60-100
Epitaxial Diode FRED VRRM 1200 V 40 ns
fast recovery diode 600v 120a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 IFAVM = 2x60 A vRRM= 1000 v trr — v RSM Type V rrm V V 1000 1000 Symbol 1 > miniBLOC, SOT-227 B 1 DSEI 2x61-10B Test Conditions Maximum Ratings (per diode) 'frm "^vj “ Tvjm Tc= 50°C; rectangular, d = 0.5
|
OCR Scan
|
OT-227
2x61-10B
1997IXYS
0003flbfl
|
PDF
|
Untitled
Abstract: No abstract text available
Text: n ixY S Fast Recovery Epitaxial Diode FRED v RSM V* RRM V DSEI12 IFAVM f\ A Type V RRM 12 A 1000 V t 50 ns TO-220 AC 1 \ C V DSEi 12-10 A 1000 1 0 00 Symbol Test Conditions Maximum Ratings ^FRM T1 VJ = T1 VJM Tc = 100°C; rectangular, d = 0.5 tp < 10 ns; rep. rating, pulse width limited by TVJM
|
OCR Scan
|
DSEI12
O-220
4bflb25b
|
PDF
|
