EYP-RWE-0790-04000-0750-SOT01-0000
Abstract: laser diode pinout laser 790 nm
Text: Version 0.90 28.12.2007 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0790-04000-0750-SOT01-0000
|
Original
|
PDF
|
EYP-RWE-0790-04000-0750-SOT01-0000
EYP-RWE-0790-04000-0750-SOT01-0000
laser diode pinout
laser 790 nm
|
tunable laser diode
Abstract: TPL 250 EYP-RWE-0870-06010-0750-SOT01-0000
Text: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0870-06010-0750-SOT01-0000
|
Original
|
PDF
|
EYP-RWE-0870-06010-0750-SOT01-0000
tunable laser diode
TPL 250
EYP-RWE-0870-06010-0750-SOT01-0000
|
EYP-RWE-0940-08000-0750-SOT01-0000
Abstract: No abstract text available
Text: Version 0.90 09.10.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0940-08000-0750-SOT01-0000
|
Original
|
PDF
|
EYP-RWE-0940-08000-0750-SOT01-0000
EYP-RWE-0940-08000-0750-SOT01-0000
|
1060 nm GaAs Laser Diode
Abstract: ridge waveguide semiconductor laser tunable laser diode GaAs diode nm laser diode lifetime
Text: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-1060-10020-0750-SOT01-0000
|
Original
|
PDF
|
EYP-RWE-1060-10020-0750-SOT01-0000
1060 nm GaAs Laser Diode
ridge waveguide semiconductor laser
tunable laser diode
GaAs diode nm
laser diode lifetime
|
CNY65
Abstract: 1093 bs 415 CNY64 CNY66 ic 40 pin 10939
Text: CNY64/ CNY65/ CNY66 Optocoupler with Phototransistor Output Description The CNY64/ 65/ 66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite
|
Original
|
PDF
|
CNY64/
CNY65/
CNY66
D-74025
11-Jun-96
CNY65
1093
bs 415
CNY64
CNY66
ic 40 pin 10939
|
CNY64
Abstract: CNY65 CNY66
Text: CNY64/ CNY65/ CNY66 Optocoupler with Phototransistor Output Description The CNY64/ 65/ 66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite
|
Original
|
PDF
|
CNY64/
CNY65/
CNY66
D-74025
12-Dec-97
CNY64
CNY65
CNY66
|
cny21n
Abstract: No abstract text available
Text: CNY21N Optocoupler with Phototransistor Output Description The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one leadframe in
|
Original
|
PDF
|
CNY21N
CNY21N
D-74025
11-Jun-96
|
RF Microwave schottky Diode mixer
Abstract: No abstract text available
Text: - PROPRIETARY INFORMATION - DOUBLE-BALANCED MICROWAVE MIXER SURFACE MOUNT MODEL: SGS-5-13 WIDE BANDWIDTH - GALAXY SERIES FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► RoHS Compliant ► SYNSTRIP Multi-Layer Technology
|
Original
|
PDF
|
SGS-5-13
-10dBm
30MHz
10dBm
13dBm
16dBm
10dBm
RF Microwave schottky Diode mixer
|
CNY65
Abstract: CNY64 CNY66
Text: TELEFUNKEN Semiconductors CNY64/ CNY65/ CNY66 Optocoupler with Phototransistor Output Description The CNY64/ 65/ 66 consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4 lead plastic packages. The single components are mounted in opposite position,
|
Original
|
PDF
|
CNY64/
CNY65/
CNY66
D-74025
CNY65
CNY64
CNY66
|
c1124
Abstract: No abstract text available
Text: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-17 3 - 19 GHz WIDE BANDWIDTH - galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► SYNSTRIP Multi-Layer Technology ► Patented REL-PRO Technology
|
Original
|
PDF
|
SGS-5-17
-10dBm
30MHz
14dBm
17dBm
19dBm
c1124
|
cny21n
Abstract: Optocoupler 601 EQUIVALENT CNY21N
Text: CNY21N TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4 lead plastic dual inline packages. The single components are mounted on one leadframe in
|
Original
|
PDF
|
CNY21N
CNY21N
D-74025
Optocoupler 601
EQUIVALENT CNY21N
|
Untitled
Abstract: No abstract text available
Text: - PROPRIETARY INFORMATION - DOUBLE-BALANCED MICROWAVE MIXER SURFACE MOUNT MODEL: SGS-5-10 3 - 19 GHz WIDE BANDWIDTH - GALAXY SERIES FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► RoHS Compliant ► SYNSTRIP Multi-Layer Technology
|
Original
|
PDF
|
SGS-5-10
-10dBm,
30MHz,
10dBm
13dBm
|
Untitled
Abstract: No abstract text available
Text: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-10 3 - 19 GHz WIDE BANDWIDTH - Galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► REL-PRO Patented Technology ► SYNSTRIP® Multi-Layer Technology
|
Original
|
PDF
|
SGS-5-10
-10dBm,
30MHz,
10dBm
13dBm
|
Untitled
Abstract: No abstract text available
Text: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-17 3 - 19 GHz WIDE BANDWIDTH - galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► REL-PRO Patented Technology ► SYNSTRIP® Multi-Layer Technology
|
Original
|
PDF
|
SGS-5-17
-10dBm
30MHz
14dBm
17dBm
19dBm
|
|
|
SLD-K5
Abstract: RF Microwave schottky Diode mixer
Text: TRIPLE-BALANCED MIXER SURFACE MOUNT MODEL: SLD-K5 WIDE BANDWIDTH 5 - 1000 MHz FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixer ► Low Conversion Loss ► High Interport Isolation ► Small Size, Surface Mount ► Lead Free Patented REL-PRO Technology
|
Original
|
PDF
|
159LF
SLD-K5
RF Microwave schottky Diode mixer
|
Untitled
Abstract: No abstract text available
Text: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-13 WIDE BANDWIDTH - galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► REL-PRO Patented Technology ► SYNSTRIP® Multi-Layer Technology 3 - 19 GHz
|
Original
|
PDF
|
SGS-5-13
-10dBm
30MHz
10dBm
13dBm
16dBm
10dBm
|
synergy DOUBLE-BALANCED MIXER package
Abstract: No abstract text available
Text: DOUBLE-BALANCED MIXER SURFACE MOUNT MODEL: SLD-K2 WIDE BANDWIDTH 5 - 1000 MHz FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixer ► Low Conversion Loss ► High Interport Isolation ► Small Size, Surface Mount ► Lead Free Patented REL-PRO Technology
|
Original
|
PDF
|
159LF
synergy DOUBLE-BALANCED MIXER package
|
tk19 infrared
Abstract: TK19 IR receiver ir tk19 Telefunken tk19 tk19 CNY65 CNY65A tk19 001 CNY66 Optocoupler 601
Text: CNY64/ CNY65/ CNY66 Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and
|
Original
|
PDF
|
CNY64/
CNY65/
CNY66
CNY66
tabl918
tk19 infrared
TK19 IR receiver
ir tk19
Telefunken tk19
tk19
CNY65
CNY65A
tk19 001
Optocoupler 601
|
Untitled
Abstract: No abstract text available
Text: DOUBLE-BALANCED microwave MIXER SURFACE MOUNT MODEL: SGS-5-10 3 - 19 GHz WIDE BANDWIDTH - Galaxy series FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► RoHS Compliant ► SYNSTRIP Multi-Layer Technology RF=-10dBm, IF=30MHz, IF=LO-RF
|
Original
|
PDF
|
SGS-5-10
-10dBm,
30MHz,
10dBm
13dBm
|
100MHZ
Abstract: SGS-5-13
Text: DOUBLE-BALANCED MICROWAVE MIXER SURFACE MOUNT MODEL: SGS-5-13 WIDE BANDWIDTH - GALAXY SERIES FEATURES: ► Multi-Octave Bandwidth ► Schottky Diode Mixers ► Low Conversion Loss ► RoHS Compliant ► SYNSTRIP Multi-Layer Technology 3 - 19 GHz RF=-10dBm IF=30MHz IF=LO-RF
|
Original
|
PDF
|
SGS-5-13
-10dBm
30MHz
10dBm
13dBm
16dBm
100MHZ
SGS-5-13
|
DIODE S3V 43
Abstract: DIODE S3V 03 DIN 50014 DIN 50014 STANDARD electromedical S10ms CNR21 dioda DIODE S3V 50 DIODE S3V 08
Text: H&D J> ITEL-EFUNKEN ELECTRONIC m ß^EOO^b PÜD7b7? IAL66 CNR 21 TTIUStFQflMKlIM electronic _ Creative Technologies Optically Coupled Triac Driver Construction: Emitter: GaAs Infrared Emitting Diode Detector: Silicon Planar Triac Bi-directional Double thyristor
|
OCR Scan
|
PDF
|
0806/IEC
0750/T1
0860/IEC
voltage933
DIODE S3V 43
DIODE S3V 03
DIN 50014
DIN 50014 STANDARD
electromedical
S10ms
CNR21
dioda
DIODE S3V 50
DIODE S3V 08
|
DIODE S3V 94
Abstract: DIODE S3V 43 DIODE S3V 75 IAL66 DIN 50014 S10ms DIN 50014 STANDARD S3V Diode 23
Text: W ITEL-EFUNKEN ELECTRONIC ]> • IAL66 fi^EOO^b PGD7 b7 ? T - U h * 1 CNR 21 TTItUStFQflMKlIMelectronic CreativeTachnotogtes Optically Coupled Triac Driver Construction: Emitter: GaAs Infrared Emitting Diode Detector: Silicon Planar Triac Bi-directional Double thyristor
|
OCR Scan
|
PDF
|
D007b7?
IAL66
0806/IEC
0750/T1
0860/IEC
0007bfll
-200-mA
DIODE S3V 94
DIODE S3V 43
DIODE S3V 75
DIN 50014
S10ms
DIN 50014 STANDARD
S3V Diode 23
|
Untitled
Abstract: No abstract text available
Text: H&T> D ITELEFUNKEN ELECTRONIC • Û^BOD^b IAL6G 0007b7? T~Uh* 7 CNR 21 TFlQJKFQÜlNlKiM] electronic _ Creative Technologies_ Optically Coupled Triac Driver Construction Emitter: GaAs Infrared Emitting Diode Detector: Silicon Planar Triac Bi-directional Double thyristor
|
OCR Scan
|
PDF
|
0007b7?
0806/IEC
0750/T1
0860/IEC
J94Y1
QD07bfll
97393d
|
L1017
Abstract: V10TM Temic Semiconductors
Text: Temic Semiconductors CNY64/ CNY65/ CNY66 Optocoupler with Phototransistor Output Description The CNY64/ 65/ 66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite
|
OCR Scan
|
PDF
|
CNY64/
CNY65/
CNY66
D-74025
12-Dec-97
L1017
V10TM
Temic Semiconductors
|
