5SDF08F4505
Abstract: PULSE16
Text: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500
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08F4505
08F4505
08F4005
1768/138a,
DM/201/06
Jul-10
5SDF08F4505
PULSE16
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Untitled
Abstract: No abstract text available
Text: 5SDF 08T4505 5SDF 08T4505 Old part no. DM 818C-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500
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08T4505
818C-800-45
08T4505
08T4005
1768/138a,
DM/218/06
Jul-10
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Untitled
Abstract: No abstract text available
Text: HL8338MG ODE-208-066B Z Rev.2 Feb. 01, 2008 GaAlAs Laser Diode Description The HL8338MG is 0.83 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.
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HL8338MG
ODE-208-066B
HL8338MG
HL8338MG:
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HL8338MG
Abstract: No abstract text available
Text: HL8338MG ODE-208-066A Z Rev.1 May 24, 2007 GaAlAs Laser Diode Description The HL8338MG is 0.83 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.
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HL8338MG
ODE-208-066A
HL8338MG
HL8338MG:
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1PS74SB43
Abstract: MARKING OK
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 1PS74SB43 Schottky barrier diode Product specification 1999 Dec 10 Philips Semiconductors Product specification Schottky barrier diode FEATURES 1PS74SB43 PINNING • Ultra fast switching speed PIN DESCRIPTION
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M3D302
1PS74SB43
115002/01/pp8
1PS74SB43
MARKING OK
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BAP64-04W
Abstract: BP317 diode 29
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP64-04W Silicon PIN diode Preliminary specification 1999 Dec 17 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-04W PINNING FEATURES • High voltage, current controlled PIN DESCRIPTION
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M3D102
BAP64-04W
OT323
MAM434
125004/04/pp7
BAP64-04W
BP317
diode 29
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BAP64-06
Abstract: BP317 sp marking
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BAP64-06 Silicon PIN diode Preliminary specification 1999 Dec 17 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-06 PINNING FEATURES • High voltage, current controlled PIN DESCRIPTION
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M3D088
BAP64-06
MAM206
125004/04/pp7
BAP64-06
BP317
sp marking
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FI6 diode
Abstract: DAP803 DIODE e5
Text: DAN 803, DAP 803 200mW . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter " Diode arrays Silicon rectifiers arrays Forward Current: 0,1 A Reverse Voltage: 80 to / V Publish Data
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200mW)
FI6 diode
DAP803
DIODE e5
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NTE631
Abstract: NTE633
Text: NTE633 Silicon Rectifier Diode High Speed Switching Surface Mount Description: The NTE631 is a high−speed switching diode fabricated in planar technology and encapsulated in a very small rectangular ceramic SMD package. Features: D Small Ceramic SMD Package
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NTE633
NTE631
150mA
NTE633
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FS200R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS200R06KE3
CEE32
1322D14
CEE326
632CF5CD
1CE73
2313ECEC
3265CDDC14ECF
1231423567896AB2CDEF1B6
54E36F
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DIODE C06-15
Abstract: DIODE C06 15 DIODE C06-13
Text: Technische Information / technical information IGBT-Module IGBT-modules FS300R17KE3 EconoPACK + Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS300R17KE3
CBB32
CBB326
223DB
2313BCBC
A3265C
C14BC
DIODE C06-15
DIODE C06 15
DIODE C06-13
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM200GA120DLC
36134B6
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LTC4098-3.6
Abstract: 36A65 FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM200GA120DLCS
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
LTC4098-3.6
36A65
FBC 320
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2NU diode
Abstract: LTC4098-3.6 DIODE C06-15
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM400GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM400GA120DLC
36134B6
61FA3265
2NU diode
LTC4098-3.6
DIODE C06-15
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marking A3 Taiwan semiconductor
Abstract: B2 Zener Zener IT 243 REJ03G0043-0300Z a3 6 zener B1 5.6 zener B2 marking code Zener B1.66 A211-1
Text: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0300Z Rev.3.00 Jul.28.2004 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance.
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REJ03G0043-0300Z
marking A3 Taiwan semiconductor
B2 Zener
Zener IT 243
REJ03G0043-0300Z
a3 6 zener
B1 5.6 zener
B2 marking code Zener
B1.66
A211-1
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Untitled
Abstract: No abstract text available
Text: Product catalogue | Terminals | Screwing technology | SAK-series modular terminals | TS 32 | Polyamide PA 6.6 | Modular terminals with electronic components | Diode terminals General ordering data Order No. Part designation Version EAN Qty. 0663960000 DK4D
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EC000903
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MMBD4448GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD MMBD4448GP SURFACE MOUNT SWITCHING DIODE ARRAY VOLTAGE 80 Volts CURRENT 250 mAmpere APPLICATION * Fast high speed switching FEATURE .019 0.50 .040 (1.02) .035 (0.88) (1) * Silicon epitaxial planar MARKING .066 (1.70) CONSTRUCTION
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MMBD4448GP
OT-23
OT-23)
MMBD4448GP
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CH706D-40PT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 45 Volts CURRENT 0.03 Ampere APPLICATION * General purpose detection * High speed switching SOT-23 * Silicon epitaxial planar .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10)
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CH706D-40PT
OT-23
OT-23)
1000m
-25oC
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CH706D-40GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CH706D-40GP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 45 Volts CURRENT 0.03 Ampere APPLICATION * General purpose detection * High speed switching SOT-23 * Silicon epitaxial planar .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10)
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CH706D-40GP
OT-23
OT-23)
1000m
-25oC
CH706D-40GP
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CH0420LSGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CH0420LSGP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 20 Volts CURRENT 0.4 Ampere APPLICATION * Low power rectification SOT-23 .019 0.50 .041 (1.05) .033 (0.85) * Silicon epitaxial planar .066 (1.70) CONSTRUCTION .110 (2.80)
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CH0420LSGP
OT-23
OT-23)
CH0420LSGP)
125oC
CH0420LSGP
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diode B8
Abstract: 555D
Text: SK 30 DGDL 066 ET power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, chopper ,03 ! ! !< ,"03
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DIODE 5A SOT-23
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD MMBD4448PT SURFACE MOUNT SWITCHING DIODE ARRAY VOLTAGE 80 Volts CURRENT 250 mAmpere APPLICATION * Fast high speed switching FEATURE .019 0.50 .041 (1.05) .033 (0.85) (1) * Silicon epitaxial planar MARKING .066 (1.70) CONSTRUCTION
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MMBD4448PT
OT-23
OT-23
DIODE 5A SOT-23
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Untitled
Abstract: No abstract text available
Text: HZU-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0043-0400 Rev.4.00 Oct.29.2007 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application.
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REJ03G0043-0400
PTSP0002ZA-A
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Marking J30 SOT23
Abstract: 4014C g0750
Text: M O TO R O LA O rder this docum ent by MMBD1010LT1/D SEMICONDUCTOR TECHNICAL DATA L G r e e n i n e MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenUne™ Portfolio of devices with energy-conserving traits. This switching diode has the following features:
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MMBD1010LT1/D
MMBD1010LT1
MMBD2010T1
MMBD3010T1
MBD1010LT1/D
Marking J30 SOT23
4014C
g0750
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