VS-20UT04
Abstract: No abstract text available
Text: VS-20UT04, VS-20WT04FN www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 20 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA D-PAK (TO-252AA) Base cathode 4, 2 Base cathode
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VS-20UT04,
VS-20WT04FN
O-251AA)
O-252AA)
2002/95/EC
VS-20UT04
11-Mar-11
VS-20UT04
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VS-20UT04
Abstract: No abstract text available
Text: VS-20UT04, VS-20WT04FN www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 20 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA D-PAK (TO-252AA) Base cathode 4, 2 Base cathode
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VS-20UT04,
VS-20WT04FN
O-251AA)
O-252AA)
2002/95/EC
VS-20UT04
2011/65/EU
VS-20UT04
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VS-20UT04
Abstract: No abstract text available
Text: VS-20UT04, VS-20WT04FN www.vishay.com Vishay Semiconductors High Performance Schottky Generation 5.0, 20 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA D-PAK (TO-252AA) Base cathode 4, 2 Base cathode
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PDF
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VS-20UT04,
VS-20WT04FN
O-251AA)
O-252AA)
VS-20UT04
2002/95/EC
2011/65/EU
VS-20UT04
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Untitled
Abstract: No abstract text available
Text: 20UT04, 20WT04FN Vishay High Power Products High Performance Schottky Generation 5.0, 20 A 20UT04 FEATURES 20WT04FN • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency
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20UT04,
20WT04FN
20UT04
O-251AA)
O-252AA)
18-Jul-08
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20WT04FN
Abstract: No abstract text available
Text: 20UT04, 20WT04FN Vishay High Power Products High Performance Schottky Generation 5.0, 20 A 20UT04 FEATURES 20WT04FN • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency
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20UT04,
20WT04FN
20UT04
2002/95/EC
AEC-Q101
O-252AA)
O-251AA)
18-Jul-08
20WT04FN
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Untitled
Abstract: No abstract text available
Text: 20UT04, 20WT04FN Vishay High Power Products High Performance Schottky Generation 5.0, 20 A 20UT04 FEATURES 20WT04FN • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency
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PDF
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20UT04,
20WT04FN
20UT04
O-251AA)
O-252AA)
18-Jul-08
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VS-20WT04FN
Abstract: VS-20UT04
Text: VS-20UT04, VS-20WT04FN Vishay Semiconductors High Performance Schottky Generation 5.0, 20 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA D-PAK (TO-252AA) Base cathode 4, 2 Base cathode 4, 2 • Extremely low reverse leakage
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PDF
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VS-20UT04,
VS-20WT04FN
O-251AA)
O-252AA)
VS-20UT04
2002/95/EC
11-Mar-11
VS-20WT04FN
VS-20UT04
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cp4071
Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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68B09
SN74ALS04BN
SN74ALS08N
SN74ALS00AN
CA3046
uA733
LM311P
LM318
CA3094
78H05
cp4071
data sheet IC 7408
2N4891
IC 7408
MDA970A2
MDA2500
1854-0071
MDA2502
2N4342
IC TTL 7400
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VS-20UT04
Abstract: No abstract text available
Text: VS-20UT04, VS-20WT04FN Vishay Semiconductors High Performance Schottky Generation 5.0, 20 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA D-PAK (TO-252AA) Base cathode 4, 2 Base cathode 4, 2 • Extremely low reverse leakage
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Original
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PDF
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VS-20UT04,
VS-20WT04FN
O-251AA)
O-252AA)
2002/95/EC
VS-20UT04
11-Mar-11
VS-20UT04
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VS-20UT04
Abstract: VS-20WT04FN
Text: VS-20UT04, VS-20WT04FN Vishay Semiconductors High Performance Schottky Generation 5.0, 20 A FEATURES • 175 °C high performance Schottky diode • Very low forward voltage drop I-PAK TO-251AA D-PAK (TO-252AA) Base cathode 4, 2 Base cathode 4, 2 • Extremely low reverse leakage
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Original
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PDF
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VS-20UT04,
VS-20WT04FN
O-251AA)
O-252AA)
2002/95/EC
VS-20UT04
18-Jul-08
VS-20UT04
VS-20WT04FN
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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bipolar transistor ghz s-parameter
Abstract: 1565E HBFP-0450 LL2012-F 5e19 bipolar transistor s-parameter COND10
Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction HBFP-0450 Medium Power Amplifier Design Avago Technologies’ HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in
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HBFP-0450
HBFP-0450
OT-343
SC-70)
031-inch
59257503E-13
292E-1
bipolar transistor ghz s-parameter
1565E
LL2012-F
5e19
bipolar transistor s-parameter
COND10
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RF Transistor s-parameter
Abstract: HBFP-0450 ADS MODEL HBFP0450
Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction Hewlett-Packard’s HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in a 4-lead SOT-343 SC-70 surface mount package. Described as a high performance, medium
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HBFP-0450
OT-343
SC-70)
031-inch
5968-2788E
RF Transistor s-parameter
HBFP-0450 ADS MODEL
HBFP0450
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HBFP-0450
Abstract: 35-689 HBFP-0450-BLK CMP10 CMP12 55 ic Sot-343 HBFP0450TR1
Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz
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HBFP-0450
SC-70
OT-343)
HBFP-0450
5968-5434E
5988-0133EN
35-689
HBFP-0450-BLK
CMP10
CMP12
55 ic Sot-343
HBFP0450TR1
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Untitled
Abstract: No abstract text available
Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz
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HBFP-0450
SC-70
OT-343)
HBFP-0450
5968-2070E
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Untitled
Abstract: No abstract text available
Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz
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HBFP-0450
SC-70
OT-343)
HBFP-0450
5968-2070E
5968-5434E
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MAX971
Abstract: MAX983 MAX981 MAX973 MAX974 MAX984 9814 transistor MAX9721 MAX983ESA max973epa
Text: 19-0450; Rev 3; 2/03 Ultra-Low-Power, Open-Drain, Single/Dual-Supply Comparators The MAX971–MAX974 and MAX981–MAX984 single/ dual/quad low-voltage comparators feature the lowest power consumption available. These micropower devices draw less than 4µA supply current over
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MAX971
MAX974
MAX981
MAX984
MAX971/MAX972/MAX981/MAX982)
MAX971/MAX973/
MAX974)
MAX984)
MAX971/MAX981
MAX983
MAX973
9814 transistor
MAX9721
MAX983ESA
max973epa
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9814 transistor
Abstract: No abstract text available
Text: 19-0450; Rev 3; 2/03 Ultra-Low-Power, Open-Drain, Single/Dual-Supply Comparators The MAX971–MAX974 and MAX981–MAX984 single/ dual/quad low-voltage comparators feature the lowest power consumption available. These micropower devices draw less than 4µA supply current over
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MAX971â
MAX974
MAX981â
MAX984
MAX971/MAX972/MAX981/MAX982)
MAX971/MAX973/
MAX974)
MAX984)
MAX971/MAX981
9814 transistor
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eiaj-c3
Abstract: EIAJC3 40khz Ultrasonic distance diagram GM5BW01300A IR sensor for 40khz
Text: _ _ R U A D D SPEC. No. DG-045008 Î35ÜE May-20-04 CONPOUND SEMICONDUCTOR DEVICES D IM ^ference ELECTRONIC COMPONENTS GROUP SHARP CORPORATION Technical literature DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODEL No. ' GM5BW01300A Specified for CUSTOMERS’ APPROVAL
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DG-045008
GM5BW01300A
May-20-04
40kHz:
eiaj-c3
EIAJC3
40khz Ultrasonic distance diagram
GM5BW01300A
IR sensor for 40khz
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Resistor MSB 124
Abstract: RK738 RK 0313 asea resistor 5245 Resistor MSB 54 RRMH ASEA Rod Resistors asea pin terminal asea time-lag relay RI RRMH
Text: Catalogue RK 7 8 -2 E RELAY COM PONENTS STUD-TYPE RTLF stud-type diode, p. 1 RTNK sho rt-circuitin g com p orten , p. 2 MRB, MSB stud-type resistors, pages 2, 3 MSTA, MSTB therm istors, p. 4 Accessories, p. 5 Plug-in type relay com ponents, oil-fille d capa
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APPAR11
Resistor MSB 124
RK738
RK 0313
asea resistor 5245
Resistor MSB 54
RRMH ASEA
Rod Resistors
asea pin terminal
asea time-lag relay RI
RRMH
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Untitled
Abstract: No abstract text available
Text: That H EW LETT WL'EM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High P erform ance, M edium Pow er, and Low N oise A p p lications 4-lead SC-70 SOT-343 Surface Mount Plastic
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HBFP-0450
SC-70
OT-343)
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100NS
Abstract: 25NS "Digital Delay Line" 0450-0100-02
Text: bel/ defining a degree of excellence DIGITAL DELAY LINE SERIES 0450 CMOS DELAY MODULE 5 TAP TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage Rise Time Pulse Width Pulse Period Supply Current, Ic c l 5.0 Volts 6.0 Nsec 10°/o-90°/o 1.2 x Total Delay 4 x Pulse Width
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/o-90Â
100NS
125NS
150NS
175NS
200NS
432-0463/TWX
710-730-5301/FAX
25NS
"Digital Delay Line"
0450-0100-02
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Untitled
Abstract: No abstract text available
Text: bel/ defining a degree of excellence DIGITAL DELAY LINE SERIES 0450 CMOS DELAY MODULE 5 TAP TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage Rise Time Pulse Width Pulse Period Supply Current, Ic c l 5.0 Volts 6.0 Nsec 10°/o-90°/o 1.2 X Total Delay 4 X Pulse Width
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PDF
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/o-90Â
CHARAC15NS
100NS
125NS
150NS
175NS
200NS
432-0463/TWX
710-730-5301/FAX
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Untitled
Abstract: No abstract text available
Text: bel/ defining a degree of excellence DIGITAL DELAY LINE SERIES 0450 CMOS DELAY MODULE 5 TAP TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage Rise Time Pulse Width Pulse Period Supply Current, Ic c l 5.0 Vblts 6.0 Nsec 10°/o-90°/o 1.2 X Total Delay 4 X Pulse Width
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/o-90
100NS
125NS
150NS
175NS
200NS
432-0463/TW
710-730-5301/FA
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