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    DIODE 0229 Search Results

    DIODE 0229 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 0229 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PS30L30

    Abstract: 1E05
    Text: STPS30L30DJF High efficiency power Schottky diode Datasheet − production data Features • Low forward voltage drop ■ Very small conduction losses ■ Negligible switching losses ■ Avalanche rated ■ Extremely fast switching ■ Low thermal resistance


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    STPS30L30DJF STPS30L30DJF PS30L30 1E05 PDF

    PS40SM120CTN

    Abstract: STPS40SM120CR
    Text: STPS40SM120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency


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    STPS40SM120C O-220AB, O-220AB STPS40SM120CR STPS40SM120CTN STPS40SM120CT PS40SM120CTN STPS40SM120CR PDF

    PS20M120SR

    Abstract: PS20M120STN
    Text: STPS20M120S Power Schottky rectifier Datasheet − production data Features A K • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K A Description A This Schottky diode is suited for high frequency


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    STPS20M120S O-220AB STPS20M120STN STPS20M120SR PS20M120SR PS20M120STN PDF

    STPS20

    Abstract: PS20S STPS20SM120S
    Text: STPS20SM120S Power Schottky rectifier Datasheet − production data Features A K • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K A Description A This Schottky diode is suited for high frequency


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    STPS20SM120S O-220AB STPS20SM120STN STPS20SM120SR STPS20 PS20S STPS20SM120S PDF

    Untitled

    Abstract: No abstract text available
    Text: STPS40SM120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency


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    STPS40SM120C O-220AB, O-220AB STPS40SM120CR STPS40SM120CTN O-220AB STPS40SM120CT PDF

    Untitled

    Abstract: No abstract text available
    Text: STPS20M120S Power Schottky rectifier Datasheet − production data Features A K • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K A Description A This Schottky diode is suited for high frequency


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    STPS20M120S O-220AB STPS20M120STN STPS20M12ny PDF

    Untitled

    Abstract: No abstract text available
    Text: STPS40M120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency


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    STPS40M120C O-220AB, O-220AB STPS40M120CR STPS40M120CTN O-220AB STPS40M120CT PDF

    Untitled

    Abstract: No abstract text available
    Text: STPS20SM120S Power Schottky rectifier Datasheet − production data Features A K • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K A Description A This Schottky diode is suited for high frequency


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    STPS20SM120S O-220AB STPS20SM120STN STPS20Sny PDF

    PS40M120CT

    Abstract: STPS40M120CR
    Text: STPS40M120C Power Schottky rectifier Datasheet − production data Features A1 • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation K A2 K K Description A2 This Schottky diode is suited for high frequency


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    STPS40M120C O-220AB, O-220AB STPS40M120CR STPS40M120CTN STPS40M120CT PS40M120CT STPS40M120CR PDF

    Untitled

    Abstract: No abstract text available
    Text: STPS30SM120S Power Schottky rectifier Datasheet − production data Features A K • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K This Schottky diode is suited for high frequency switch mode power supply.


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    STPS30SM120S O-220AB STPS30SM120SR STPS30SM120STN PDF

    Untitled

    Abstract: No abstract text available
    Text: STPS30M120S Power Schottky rectifier Datasheet − production data Features A K • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K This Schottky diode is suited for high frequency switch mode power supply.


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    STPS30M120S O-220AB STPS30M120SR STPS30M120STNny PDF

    ps30m120stn

    Abstract: PS30M
    Text: STPS30M120S Power Schottky rectifier Datasheet − production data Features A K • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K This Schottky diode is suited for high frequency switch mode power supply.


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    STPS30M120S O-220AB STPS30M120SR STPS30M120STN ps30m120stn PS30M PDF

    6685E

    Abstract: No abstract text available
    Text: 1SV269 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 269 CATV TUNING. High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.550 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package


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    1SV269 C2V/C25V C2V/C25V 6685E PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV239 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 239 VCO FOR UHF RADIO Ultra Low Series Resistance : rs = 0.440 Typ. Useful for Small Size Set MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature


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    1SV239 C2V/C10V PDF

    1SV309

    Abstract: C25V
    Text: 1SV309 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 0 9 UHF SHF TUNING High Capacitance Ratio : C2V / C25V = 5.7 Typ. : rs = 1.20 (Typ.) Low Series Resistance Excellent C-V Characteristics, and Small Tracking Error Useful for Small Size Tuner


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    1SV309 C2V/C25V 1SV309 C25V PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV283 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 28 3 Unit in mm CATV TUNING • High Capacitance Ratio : C2V/C25V = 11.5 TYP. • Low Series Resistance : rs = 0.550 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.


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    1SV283 C2V/C25V 0014g PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SV282 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 28 2 Unit in mm CATV TUNING • • • • High Capacitance Ratio : C2V/C25V = 12.5 TYP. Low Series Resistance : rs = 0.60 (TYP.) Excellent C-V Characteristics, and Small Tracking Error.


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    1SV282 C2V/C25V 0014g PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV245 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 5 UHF SHF TUNING High Capacitance Ratio : C2V/C25V = 5.7 Typ. Low Series Resistance : rs = 1.20 (Typ.) Excellent C - V Characteristics, and Small Tracking Error. MAXIMUM RATINGS (Ta = 25°C)


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    1SV245 C2V/C25V C2V/C25V PDF

    1SV280

    Abstract: 6890E
    Text: 1SV280 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV280 VCO FOR UHF BAND RADIO • • • High Capacitance Ratio : C2v /C;lov = 2.4 TYP. Low Series Resistance : rs = 0.440 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)


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    1SV280 0014g 1SV280 6890E PDF

    1SV232

    Abstract: C25V
    Text: 1SV232 TO SH IBA 1 S V2 3 2 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. SILICON EPITAXIAL PLANAR TYPE • High Capacitance Ratio : C2 V / C25 V = 10.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner.


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    1SV232 1SV232 C25V PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV231 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. • • • SILICON EPITAXIAL PLANAR TYPE 1 SV231 High Capacitance Ratio : C2 y /C 2 5 V = 15 Typ. Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. Unit in mm


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    1SV231 SV231 PDF

    1SV279

    Abstract: 2599E
    Text: 1SV279 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 279 VCO FOR V/UHF BAND RADIO • • • High Capacitance Ratio : C2v /C;lov = 2.5 TYP. Low Series Resistance : rs = 0.20 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)


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    1SV279 0014g 1SV279 2599E PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV270 TOSHIBA 1 SV270 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • High Capacitance Ratio Low Series Resistance Small Package SILICON EPITAXIAL PLANAR TYPE Unit in mm : C1V/C4V = 2.0 Typ. : rs = 0.28Ü (Typ.) M A X IM U M RATINGS (Ta = 25°C)


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    1SV270 SV270 470MHz PDF

    marking BL

    Abstract: 1sv128
    Text: TOSHIBA 1SV128 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 S V 128 V H F -U H F BAND RF ATTENUATOR APPLICATIONS. • • Small Package Small Total Capei tance : Cx = 0.25pF Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Forward Current


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    1SV128 SC-59 marking BL 1sv128 PDF