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    DIODE 007 Search Results

    DIODE 007 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    DIODE 007 Price and Stock

    Hirschmann Electronics GmbH & Co Kg GDM 3009 J W/IN4007 DIODE ME

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GDM 3009 J W/IN4007 DIODE ME 23
    • 1 $7.23
    • 10 $6.33
    • 100 $5.13
    • 1000 $4.22
    • 10000 $4.22
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    DIODE 007 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LTC4358

    Abstract: LTC4252-2A LTC4358CFE MARKING TRANSISTOR BD RC marking g02 tssop FE16 n channel mosfet marking Bc B530C LTC4358C LTC4358CDE
    Text: LTC4358 5A Ideal Diode FEATURES DESCRIPTION n The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat


    Original     		PDF LTC4358 LTC4358 14-Pin 16-Lead LTC4355 LTC4357 LTC4223-1/LTC4223-2 4358fa LTC4252-2A LTC4358CFE MARKING TRANSISTOR BD RC marking g02 tssop FE16 n channel mosfet marking Bc B530C LTC4358C LTC4358CDE

    Untitled

    Abstract: No abstract text available
    Text: LTC4358 5A Ideal Diode FEATURES n n n n n n n DESCRIPTION The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat


    Original     		PDF LTC4358 LTC4358 14-Pin 16-Lead LTC4355 LTC4357 LTC4223-1/LTC4223-2 4358fa

    BAV70-GS18

    Abstract: BAL99 BAV70 BAV70-GS08 BAV99 BAW56
    Text: BAV70 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with


    Original     		PDF BAV70 BAV99, BAW56, BAL99. OT-23 BAV70-GS18 BAV70-GS08 D-74025 09-Jul-04 BAL99 BAV70 BAV70-GS08 BAV99 BAW56

    Untitled

    Abstract: No abstract text available
    Text: BAW56 VISHAY Vishay Semiconductors Dual Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a


    Original     		PDF BAW56 BAL99, BAV99, BAV70. OT-23 BAW56 BAW56-GS18 BAW56-GS08 D-74025 27-Apr-04

    BAW56 GS18

    Abstract: marking code JD BAW56 BAL99 BAV70 BAV99 BAW56 BAW56-GS08
    Text: BAW56 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a


    Original     		PDF BAW56 BAL99, BAV99, BAV70. OT-23 BAW56-GS18 BAW56-GS08 D-74025 09-Jul-04 BAW56 GS18 marking code JD BAW56 BAL99 BAV70 BAV99 BAW56 BAW56-GS08

    Untitled

    Abstract: No abstract text available
    Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.


    Original     		PDF LTC4357 10-Bit 4357fa

    Solar Charge Controller

    Abstract: 48V 100W zener diode 14v 10A mosfet solar controller FDB3632 solar panel controller p channel mosfet 100v Solar Charge Controller Circuit SMAT70A solar panel 5v
    Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.


    Original     		PDF LTC4357 LTC4357 LTC4350 LT4351 LTC4354 LTC4355 4357fb Solar Charge Controller 48V 100W zener diode 14v 10A mosfet solar controller FDB3632 solar panel controller p channel mosfet 100v Solar Charge Controller Circuit SMAT70A solar panel 5v

    Solar Charge Controller

    Abstract: LTC4357H SMAT70A FDB3632 LTC4357 LTC4357HDCB MBR10100 LT16411 ORing fet 48v 5a SBR1V15DSA
    Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.


    Original     		PDF LTC4357 LTC4357 LTC4350 LTC4352 LTC4354 LTC4355 4357fc Solar Charge Controller LTC4357H SMAT70A FDB3632 LTC4357HDCB MBR10100 LT16411 ORing fet 48v 5a SBR1V15DSA

    BAV70 SOT-23 JJ

    Abstract: sot23 code JJ Diode 1S 133 Marking code JJ
    Text: BAV70 Vishay Semiconductors formerly General Semiconductor Dual Small-Signal Diode TO-236AB SOT-23 Features .122 (3.1) .110 (2.8) .016 (0.4) • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations


    Original     		PDF BAV70 O-236AB OT-23) BAV99, BAW56, BAL99. OT-23 E8/10K 30K/box 30K/boxCondition BAV70 SOT-23 JJ sot23 code JJ Diode 1S 133 Marking code JJ

    Untitled

    Abstract: No abstract text available
    Text: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.


    Original     		PDF LTC4357 4357fb

    Untitled

    Abstract: No abstract text available
    Text: BAV70 VISHAY Vishay Semiconductors Dual Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation BAV99, a dual common anode


    Original     		PDF BAV70 BAV99, BAW56, BAL99. OT-23 BAV70 BAV70-GS18 BAV70-GS08 D-74025 27-Apr-04

    Kjh diode

    Abstract: No abstract text available
    Text: BAV70 VISHAY Vishay Semiconductors Dual Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation BAV99, a dual common anode


    Original     		PDF BAV70 BAV99, BAW56, BAL99. OT-23 BAV70 BAV70-GS18 BAV70-GS08 D-74025 14-Jan-04 Kjh diode

    sot23 code JJ

    Abstract: Diode 1S 133
    Text: BAV70 Dual Small Signal Diode TO-236AB SOT-23 Features .122 (3.1) .110 (2.8) .016 (0.4) • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including: a dual common anode to cathode with


    Original     		PDF BAV70 O-236AB OT-23) BAV99, BAW56, BAL99. OT-23 E8/10K 30K/box 30K/box sot23 code JJ Diode 1S 133

    BAV99V

    Abstract: No abstract text available
    Text: BAV70-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common e3 cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation BAV99-V, a dual


    Original     		PDF BAV70-V BAV99-V, BAW56-V, BAL99-V. OT-23 BAV70-V BAV70-V-GS18 BAV70-V-GS08 D-74025 11-Mar-05 BAV99V

    Marking code JJ

    Abstract: sot23 code JJ BAL99 BAV70 BAV99 BAW56 BAV70 DUAL BAV70 SOT-23 JJ
    Text: BAV70 Dual Small-Signal Diode TO-236AB SOT-23 Features .122 (3.1) .110 (2.8) .016 (0.4) • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including: a dual common anode to cathode with


    Original     		PDF BAV70 O-236AB OT-23) BAV99, BAW56, BAL99. OT-23 E8/10K 150mA Marking code JJ sot23 code JJ BAL99 BAV70 BAV99 BAW56 BAV70 DUAL BAV70 SOT-23 JJ

    Untitled

    Abstract: No abstract text available
    Text: BAV70-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common e3 cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation BAV99-V, a dual


    Original     		PDF BAV70-V BAV99-V, BAW56-V, BAL99-V. 2002/95/EC 2002-96/EC OT-23 BAV70-V BAV70-V-GS18s 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: BAW56-V Vishay Semiconductors Small Signal Switching Diode, Dual Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common e3 anode • This diode is also available in other configurations including: a single with type designation BAL99, a dual anode to cathode with type


    Original     		PDF BAW56-V BAL99, BAV99, BAV70. 2002/95/EC 2002/96/EC OT-23 BAW56-V BAW56-GS18 BAW56-GS0s

    Untitled

    Abstract: No abstract text available
    Text: BAW56-V Vishay Semiconductors Small Signal Switching Diode, Dual Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common e3 anode • This diode is also available in other configurations including: a single with type designation BAL99, a dual anode to cathode with type


    Original     		PDF BAW56-V BAL99, BAV99, BAV70. 2002/95/EC 2002/96/EC OT-23 BAW56-V BAW56-GS18 BAW56-GS0ake

    Untitled

    Abstract: No abstract text available
    Text: BAW56-V Vishay Semiconductors Small Signal Switching Diode, Dual Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common e3 anode • This diode is also available in other configurations including: a single with type designation BAL99, a dual anode to cathode with type


    Original     		PDF BAW56-V BAL99, BAV99, BAV70. OT-23 BAW56-V BAW56-GS18 BAW56-GS08 D-74025 11-Mar-05

    ltc4352iddpbf

    Abstract: TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A 12-PIN LTC4352C LTC4352CDD LTC4352IDD
    Text: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES DESCRIPTION n The LTC 4352 creates a near-ideal diode using an external N-channel MOSFET. It replaces a high power Schottky diode and the associated heat sink, saving power and board area. The ideal diode function permits low loss


    Original     		PDF LTC4352 12-Pin 1TC4412HV 8V/36V, TSOT-23 LTC4413/LTC4413-1 DFN-10 LTC4414 LTC4416/LTC4416-1 ltc4352iddpbf TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A LTC4352C LTC4352CDD LTC4352IDD

    GSD2004A

    Abstract: GSD2004A-GS08 GSD2004A-GS18
    Text: GSD2004A VISHAY Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability


    Original     		PDF GSD2004A OT-23 O-236AB) GSD2004A-GS18 GSD2004A-GS08 D-74025 08-Jul-04 GSD2004A GSD2004A-GS08

    Untitled

    Abstract: No abstract text available
    Text: GSD2004A VISHAY Vishay Semiconductors Dual Common-Anode Small-Signal High-Voltage Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual common-anode diode, especially suited for applications requiring high voltage capability


    Original     		PDF GSD2004A OT-23 O-236AB) GSD2004A GSD2004A-GS18 GSD2004A-GS08 D-74025 21-Apr-04

    DIODE

    Abstract: filament bulb
    Text: DD.207 BATTERY DOUBLE DIODE R A T IN G . Filament Voltage . . Filament Current Amps. . . . ••• •■■ 2-0 . 0075 IN T E R -E L E C T R O D E C A P A C IT IE S . Diode I to Filament Diode 2 to Filament


    OCR Scan     		PDF

    BZX88

    Abstract: BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 BZX88-C2V7
    Text: MICRO-E SILICON PLANAR HIGH-SPEED SW ITCHING DIODES Ratings and Characteristics at 2 5 °C ambient temperature Type BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 Description Max. Vrw m Volts 60 Single diode 30 Single diode Single diode 15 60 Common cathode diode pair


    OCR Scan     		PDF BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 BZX88-C10 BZX88-C11 BZX88 BZX88-C2V7