B5817WS
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 20 V Operating and storage junction temperature range
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OD-323
B5817WS
OD-323
B5817WS
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B5819WS
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 40 V Operating and storage junction temperature range
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OD-323
B5819WS
OD-323
B5819WS
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Schottky Diode 30V 1A SOD
Abstract: diode SOD-323 B5818WS
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5818WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 30 V Operating and storage junction temperature range
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OD-323
B5818WS
OD-323
Schottky Diode 30V 1A SOD
diode SOD-323
B5818WS
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2SD2428
Abstract: TF02
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE U nit in nun COLOR TV HORIZONTAL OUTPUT APPLICATIONS. • • • High Voltage : V c b O -^O O V High Speed Switching : tf=0.2/as Typ. (Icp = 6A, lBl(end) = 1-2A) Built-in Damper Diode. ^e t-ll n r t V. f P "S in
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D2428
2SD2428
2SD2428
TF02
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16FL2CZ
Abstract: No abstract text available
Text: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 16(D, F)L2CZ47A Unit in SWITCHING MODE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage - 03.2 ± 0.2 - : V r r m =200, 300V • Average Output Rectified Current : Io=16A
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L2CZ47A
16DL2CZ47A
16FL2CZ47A
16DL2CZ47AJ
16FL2CZ47A)
16FL2CZ
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20JL2C41A
Abstract: 20JL2C
Text: TO SHIBA 20JL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41A SWITCHING TYPE PO W ER SUPPLY APPLICATION Unit in mm 03.2 + 0.2 / • Repetitive Peak Reverse Voltage V r r m • Average Output Rectified Current I 0 = 2 0A •
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20JL2C41A
961001EAA2'
20JL2C41A
20JL2C
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byv26 500
Abstract: BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E BYV26DBYV26E
Text: BYV26A.BYV26E 1 Amp. Very Fast Soft Recovery Glass Passivated Avalanche Diode Dimensions in mm. DO-41 Plastic Voltage 200 to 1000 V. Current 1 A at 55 ºC. 5 +0.2 -0 58.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point,
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BYV26A.
BYV26E
DO-41
BYV26A
BYV26
BYV26;
BYV26D;
byv26 500
BYV26
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26DBYV26E
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BYV26
Abstract: BYV26A BYV26B BYV26C BYV26D BYV26E
Text: BYV26A.BYV26E 1 Amp. Very Fast Soft Recovery Glass Passivated Avalanche Diode Dimensions in mm. DO-41 Plastic Voltage 200 to 1000 V. Current 1 A at 55 ºC. 5 +0.2 -0 58.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point,
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BYV26A.
BYV26E
DO-41
BYV26A
BYV26
BYV26;
BYV26D;
BYV26
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
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Untitled
Abstract: No abstract text available
Text: BYV26A . BYV26E 1 Amp. Very Fast Recovery Glass Passivated Avalanche Diode DO-41 Plastic Current 1.0 A at 55 °C Voltage 200 to 1000 V ø0.8 ±0.05 ø2.6 ±0.1 Dimensions in mm. R +0.2 -0 5 ±0.5 58.5 Mounting instructions 1. Min. distance from body to soldering point,
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BYV26A
BYV26E
DO-41
BYV26B
BYV26C
BYV26A
BYV26D
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BYV26A
Abstract: No abstract text available
Text: BYV26A . BYV26E 1 Amp. Very Fast Recovery Glass Passivated Avalanche Diode DO-41 Plastic Current 1.0 A at 55 °C Voltage 200 to 1000 V ø0.8 ±0.05 ø2.6 ±0.1 Dimensions in mm. R +0.2 -0 5 ±0.5 58.5 Mounting instructions 1. Min. distance from body to soldering point,
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BYV26A
BYV26E
DO-41
BYV26A
BYV26D
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EC10QS09
Abstract: EC10QS10 FC53
Text: SCHOTTKY BARRIER DIODE i.ia / 90~ io o v ecioqso9 ecioqsio FEA TUR ES Miniature Size, Surface Mount Device 2-2 .ÖS7 1.8(.071) 5.3(.209) ° Low Forward Voltage Drop - O IT 8 5 5 - _ 4.7(.168)_ 4.3(169) » Low Power Loss, High Efficiency 0.2(.008) 2.7(.106)
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EC10QS09
EC10QS10
T575T
EC10QS09
bbl51E3
EC10QS10
FC53
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DFG1A2
Abstract: No abstract text available
Text: 4496205 H H A C H I / O P T O E L E U I R U N I C S > ^68C 09828 • ütjjÈ M & -f =t— K (F a st R e c o v e ry Diode DFGTA T ñ 29MIN. (1.14) DE I M4 ^ ^ 2 0 5 DOma^fl 1 D 7 "-¿ > 3 ‘ / 3 JL V R R M : 200V— 800V >F(AV): 1 0 A trr : 0.2/*s 5MAX.
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29MIN.
ID55i
DFG1A2
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PDF
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Untitled
Abstract: No abstract text available
Text: S EM IC O N D U C T O R KDS165T TECHNI CAL DATA SI LI CON EPI TAXI AL PLANAR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • L ow Forw ard V oltage. • Fast R everse R ecovery T im e. • Sm all T otal C apacitance. DIM A 2.9± 0.2 n B
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KDS165T
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SD-46 Diode
Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
500ns,
SD-46 Diode
Schottky 30A 40v
schottky diode 60V 5A
diode
Schottky Diode 20V 5A
Schottky Diode 40V 2A
5A schottky
60V 3A diode
ERA81-004
ERA83-006
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300108J
Abstract: ACV11012 ACV12012 ACV12212 ACV13012 ACV31012 ACV32012 ACV33012
Text: CV ACV AUTOMOTIVE LOW PROFILE MICRO-ISO/MICRO-280 RELAY mm inch 15 .591 22.5 .886 Micro ISO 1c type Micro ISO 1a type 15 .591 22.5 .886 15.7 .618 Micro 280 plug-in type FEATURES • Low profile: 22.5 mm(L)x15 mm(W)×15.7 mm(H) .886 inch(L)×.591 inch(W)×.618 inch(H)
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MICRO-ISO/MICRO-280
300108J
300108J
ACV11012
ACV12012
ACV12212
ACV13012
ACV31012
ACV32012
ACV33012
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Dsei 2x101-12A
Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Text: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000
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O-252
0-06A
0-10A
0-12A
D1-16
D1-18
D1-20
0-02A
Dsei 2x101-12A
ixys dsei 1x31-06c
ixys dsei 2x31-06c
IXYS DSEI 2X121-02a
ixys dsei 2x30-06c
DSEI IXYS 2x31-12B
2x61-06c
2x121-02a
2x31-12B
2x31-10b
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Untitled
Abstract: No abstract text available
Text: SVD1N60M/SVD1N60T 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
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SVD1N60M/SVD1N60T
O-251-3L
30TYP
O-220-3L
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PDF
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Untitled
Abstract: No abstract text available
Text: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067
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OT-223
Q67000-S067
E6327
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E6327
Abstract: Q67000-S067
Text: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067
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OT-223
Q67000-S067
E6327
E6327
Q67000-S067
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS3010A. Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage typ. 0.41V @ 1 F = 1A • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package 1)
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BAS3010A.
010A-03W
BAS3010A-03W
OD323
50/60Hz,
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PDF
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E6327
Abstract: Q67000-S067
Text: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067
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OT-223
Q67000-S067
E6327
E6327
Q67000-S067
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PDF
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BAS3010A-03W
Abstract: marking AF BAR63-03W
Text: BAS3010A. Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage typ. 0.41V @ I F = 1A • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package 1)
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BAS3010A.
010A-03W
BAS3010A-03W
OD323
50/60Hz,
BAS3010A-03W
marking AF
BAR63-03W
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PDF
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BAS3010A-03W
Abstract: No abstract text available
Text: BAS3010A. Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage typ. 0.41V @ IF = 1A • For high efficiency DC/DC conversion, fast switching, protection and clamping applications BAS3010A-03W 1
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Original
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BAS3010A.
BAS3010A-03W
OD323
BAS3010A-03W
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PDF
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E6327
Abstract: Q67000-S067
Text: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067
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Original
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OT-223
Q67000-S067
E6327
Sep-12-1996
E6327
Q67000-S067
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PDF
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