2l09
Abstract: Schottky Diode 40V 6A
Text: DUAL POWER SCHOTTKY RECTIFIERS USD635C USD640C USD645C USD650C 12A Av, up to 50V DESCRIPTION The USD600C series of power Schottky rectifiers, in the industry standard T0-220 package, is specifically designed fo r operation in power switching circuits to frequencies in excess of 100 KHz. The series combines Schottky rectifiers in one
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USD635C
USD640C
USD645C
USD650C
USD600C
T0-220
USD650C
USD635C
2l09
Schottky Diode 40V 6A
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dioda by 238
Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching
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0D00S73
dioda by 238
1xys
1XFM67N10
HiperFET
IXFN50N25
IXFM50N20
IXFM6N90
IXFH40N30
IXFH10N100
IXFH11N100
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o lo g y • 1 - Cathode 2 - Anode Back of Case - Cathode APT60D60B APT60D50B 600V 500V 60A 60A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE P R O D U C T A P P L IC A T IO N S PRO DUCT FEATURES P R O D U C T B E N E F IT S • Anti-Parallel Diode
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APT60D60B
APT60D50B
O-247
O-247AD
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dioda rectifier
Abstract: dt3400 pearson 411
Text: A d v P o w a n c e d e r T e c h n o lo g y * 1 - Cathode 2-Anode Back of Casa - Cathoda APT30D60B APT30D50B 600V 500V 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE P R O D U C T A PP LIC A T IO N S PR O D U C T FEATURES P R O D U C T BENEFITS • Anti-Parallel Diode
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APT30D60B
APT30D50B
O-247
O-247AD
dioda rectifier
dt3400
pearson 411
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Untitled
Abstract: No abstract text available
Text: A d v a n c ed P o w er Te c h n o l o g y 1 - Cathode 2 - Anods Back of Caaa -Cathoda APT30D40B 400V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS > Anti-Parallel Dloda -Switchmoda Power Supply -Invartars
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APT30D40B
O-247
O-247AD
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dioda rectifier
Abstract: 4r3ti
Text: /'°7 —t V W X / Power Devices J b s f T r^ i • -f 3fr — K ■I t -f 1/ 3R3TI60E-080 4R3TI20Y-080 4R3TI30Y-080 4R3TI6QY-080 6R1TI30Y-080 III 3R3TI20E-080 3R3TI30E-080 m & Application O > > » it Device type £ /l'a ï v i - JU Diode and T h yristo r M odules
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3R3TI20E-080
3R3TI30E-080
3R3TI60E-080
4R3TI20Y-080
4R3TI30Y-080
4R3TI6QY-080
6R1TI30Y-080
dioda rectifier
4r3ti
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Untitled
Abstract: No abstract text available
Text: A d va n ced P o w er Te c h n o l o g y * A2 APT2X101D100J 1000V 100A APT2X101D90J 900V 100A APT2X101D80J 800V 100A Al DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT2X101D100J
APT2X101D90J
APT2X101D80J
OT-227
OT-227
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DD-221
Abstract: dioda module
Text: Preliminary Data S heet No. P D -9.936 International S Rectifier IRGNI0075M12 "CHOPPER" INT-A-PAK MODULES Fast™ IGBT High Side Switch Chopper V CE= 1 2 0 0 V _ - o 3 I nr - «• 5 . . Rugged Design • Simple gate-drive .Fast operation up to 10 kHz hard switching,
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IRGNI0075M12
0D22152
10OnH
DD-221
dioda module
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diodes byw 92
Abstract: BYW 200 ZTF 160 thomson diodes diode BYW 92 diode La AV8080 diode BYW 66
Text: STC D 1• 7 ^ 5 3 7 S G S—THOMSON 59C 0 2 2 1 6 D OüüEait. 7 T-*>2~U BYW 08-50-200, R O THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T SUPERSW ITCH
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BYW08
diodes byw 92
BYW 200
ZTF 160
thomson diodes
diode BYW 92
diode La
AV8080
diode BYW 66
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mr2001s
Abstract: dioda 30 Ampere dioda 3 ampere MR2000SR MR2000S diode rectifiers dioda ak 03 MR2002S dioda rectifier MR2006S MR2000S
Text: MR2000S SILICON series MEDIUM-CURRENT SILICON RECTIFIERS MEDIUM-CURRENT SILICON RECTIFIERS 20 AMPERE 50-1000 VOLTS DIFFUSED JUNCTION . . . compact, highly efficien t silicon rectifiers fo r medium-current applications requiring: • High C urrent Surge - 400 Amperes @
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MR2000S
2000S
2001S
2002S
2004S
2006S
2008S
mr2001s
dioda 30 Ampere
dioda 3 ampere
MR2000SR
MR2000S diode rectifiers
dioda ak 03
MR2002S
dioda rectifier
MR2006S
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OA7 diode
Abstract: AL 1450 DV
Text: Data Sheet No. PD-9.877 INTERNATIONAL RECTIFIER I« R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR 60 Volt, 0.017 Ohm HEXFET IRFV064 Product Summary Part Number The HEXFET® technology is the key to International Rectifier's advanced line of power M O S FE T transistors.
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IRFV064
1RFV064D
IRFV064U
O-258
MIL-S-19500
I-454
OA7 diode
AL 1450 DV
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Diode BYW 56
Abstract: 0224S diode BYW 19 2791T byw+36+v
Text: S G S-THOMSQN SIC D o THOMSON*CSF BYW 81-50—200, R BYW 81-150 A. (R) DIVISION SEMICONOUCTÏURS DISCRETS : TTETEB? QGQEEMt. SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY SUPER SWITCH
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1200C
REDRE08
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode BYW 56
0224S
diode BYW 19
2791T
byw+36+v
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7000R
Abstract: T0-209AC
Text: INTERNATIONAL RECTIFIER TOR ' ^ Ì F| 4ÖSS4S5 DGObfl-Ti 4 | T - X 5-/7 Data Sheet No. PD-3.141 in t e r n a t io n a l r e c t if ie r b ia u i- S t m t S 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 30 /j s 110 AMP RMS, CENTER AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs
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S18CF16A0.
S18CF
T0-209AC
7000R
T0-209AC
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Untitled
Abstract: No abstract text available
Text: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T
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CB-425)
CB-262
CB-262)
CB-19)
CB-428)
CB-244
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PDF
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IRF710
Abstract: IRF711 IRF710.711
Text: N-CHANNEL POWER MOSFETS IRF710/711 FEATURES TO-220 • Lower R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tem perature reliability
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IRF710/711
IRF710
IRF711
IRF710.711
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IRFF420R
Abstract: IRFF421R IRFF422R IRFF423R
Text: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Num ber 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1 .4 A a n d 1 .6 A , 4 5 0 V - 5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • ■ ■
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IRFF420R,
IRFF421R,
IRFF422R,
IRFF423R
50V-500V
IRFF422R
IRFF423R
92CS-42660
IRFF420R
IRFF421R
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IRF612R
Abstract: IRF610R IRF611R IRF613R
Text: _ Rugged Power MOSFETs IRF610R, IRF611R, IRF612R, IRF613R File Number 1988 Avalanche Energy Rated N-Channel Power MOSFETs 2 .0 A an d 2.5 A , 1 5 0 V -2 0 0 V ros on = 1 .5 0 a n d 2 .4 0 N-CHANNEL ENHANCEMENT MODE D Features: • ■ ■ ■
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IRF610R,
IRF611R,
IRF612R,
IRF613R
50V-200V
IRF612R
IRF613R
aCS-421560
IRF610R
IRF611R
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rj dioda
Abstract: No abstract text available
Text: - I N T E R N A T I O N A L RECTIFIER IO R in t e r n a t io n a l 73 2.5 -/? DE~| 4ÖSS4SB OOObTM? 0 | ~ Data Sheet No. PD-3.149 r e c t if ie r S30DF S E R IE S 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 30 fjs 290 AMP RMS, RING AM PLIFYING GATE INVERTER TY P E STUD MOUNTED S C R s
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S30DF
T0-209AD
S3QOF16AO.
O-209AE
O-118)
rj dioda
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2N6155
Abstract: 2n6156 2N6755 2N6756 dioda
Text: 3875081 G E^SOLID S TATE 01 DE 1 3 0 7 5 0 0 1 0010304 T | D ' T-39-11 Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors * N-Channel Enhancement-Mode
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3fi750fll
t-39-
2N6755,
2N6756
0V-100V
2N6755
2N6756
3fi75Clfll
2N6155
2n6156
dioda
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Untitled
Abstract: No abstract text available
Text: • OO^flùb fl£35 b05 47T ■ SIEMENS Mini PROFET BSP 452 MiniPROFET • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load
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Q67000-S271
fi235bG5
fl23SbOS
fl23StGS
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PDF
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IRF341R
Abstract: IRF343 IRF340R IRF342R IRF343R
Text: Rugged Power MOSFETs _ IRF340R, IRF341R, IRF342R, IRF343R File N u m b e r 2005 Avalanche Energy Rated N-Channel Power MOSFETs 10A and 8A, 400V and 350V rDS on = 0.550 and 0.80fi N -C H A N N E L E N H A N C E M E N T M O D E Features: • Single pulse avalanche energy rated
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IRF340R,
IRF341R,
IRF342R,
IRF343R
IRF342R
IRF343R
92CS-4263Â
92CS-42660
IRF341R
IRF343
IRF340R
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ma 8920
Abstract: dioda rectifier 04140 tny 226 dioda 12B 750PEF10 750PEF40 power dioda cross 9BB. GI 8920
Text: INTERNATIONAL RECTIFIER 4855452 INTERNATIONAL RECTIFIER 4T DE§4flSS452 DD047B4 b Data Sheet No. P D -3.06f 49C 04734 C INTERNATIONAL RECTIFIER I R 1 180A RMS Fast Turn-Off Hockey Puk Thyristors 750PEF SERIES Description The 750PEF series of fast turn-off thyristors use centre
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750PEF
233KansasSt.
CA90245
II60067.
ma 8920
dioda rectifier
04140
tny 226
dioda 12B
750PEF10
750PEF40
power dioda cross
9BB.
GI 8920
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MDA980-1
Abstract: MDA990-6 MDA990-1 MDA980-6 dioda bridge pj 66 diode pj 50 diode pj 56 diode dioda 30 Ampere dioda rectifier
Text: MDA980-1 n, MDA980-6 MDA990-1 thru MDA990-6 Designers Data Sheet S IN G L E P H A S E F U L L - W A V E B R ID G E I N T E G R A L D IO D E A S S E M B L I E S 12 and 30 A M PERES 50 t h r u 600 V O LTS . . . passivated, diffused silicon dice interconnected and transfer
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MDA980-1
MDA980-6
MDA990-1
MDA990-6
MDA990
MDA990-6
dioda bridge
pj 66 diode
pj 50 diode
pj 56 diode
dioda 30 Ampere
dioda rectifier
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PDF
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1rf630
Abstract: rf630 IRF632R IRF630 HARRIS
Text: 3 ] H A R R I S IR F 6 3 0 /6 3 1 /6 3 2 /6 3 3 IR F 6 3 0 R /6 3 1 R /6 3 2 R /6 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s T O -2 2 0 A B TOP VIEW • 8.0A and 9.0A , 150V - 2 0 0V • i"DS °n = and 0 .6 fi
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IRF630,
IRF631,
IRF632,
IRF633
IRF630R,
IRF631R,
IRF632R
IRF633R
1rf630
rf630
IRF630 HARRIS
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