LCD 2X16
Abstract: IEC60870-5-101 dwa 106 n 161 CZIP-3H ABB TZN 124 IEC-60870-5-101 siemens transformator IEC255 rs485 SIEMENS DNP prostowniki
Text: SPIS TREŚCI 1. WSTĘP. 4 2. OGÓLNA CHARAKTERYSTYKA SYSTEMU CZIP . 5
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atmel 0825 G
Abstract: atmel 0825
Text: Features • • • • • • • • • • • • • • • • • • • 8-bit Resolution 1 Gsps Min. Sampling Rate ADC Gain Adjust 2 GHz Full Power Input Bandwidth Fs = 1 Gsps, Fin = 20 MHz: – SINAD = 45 dB (7.4 Effective Bits) SFDR = 58 dBc
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atmel 0825 G
Abstract: atmel 0825
Text: MAIN FEATURES 8-bit resolution. ADC gain adjust. 2 GHz full power input bandwidth. 1 Gsps min sampling rate. SINAD = 45 dB (7.4 Effective Bits) SFDR = 58 dBc @ FS = 1 Gsps, FIN = 20 MHz : SINAD = 44 dB (7.2 Effective Bits) SFDR = 56 dBc
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-52dBc
atmel 0825 G
atmel 0825
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Untitled
Abstract: No abstract text available
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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Triac 12F
Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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T-63-65"
TRIAC210-.
TRIAC350-.
FD150-.
FD210-.
FD280-.
FD350-.
IRCI210-.
IRCI230-.
IRCI350-.
Triac 12F
irkt 40
thyristor silicon WAFER chips
31017
triac 1200V
21PT
36MB-A
40HF
70HF
85HF
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Untitled
Abstract: No abstract text available
Text: S G S'IC S -T H Q M SO N . 59C D I 7 C12CJ237 02713 O THOMSON-CSF ÜGG2713 D T-GMP5/5A/5B DIVISION SEMICONDUCTEURS UNIDIRECTIONAL TRAN SIEN T VOLTAGE SU PPRESSO RS DIOD ES D E PROTECTION UNIDIRECTIONNELLES TRANSIL Pp : 60OW/1ms expo. 7,2kW/8-20^s expo. TRANSIENT VOLTAGE SUPPRESSOR DIODES ESPECIALLY
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GG2713
600w/1
2kW/8-20
60OW/1ms
2kW/8-20
C------150
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Scans-048
Abstract: UL1550-II DSAGER0007
Text: UKLAD SCALONY ANALOGOWY UL1550L 19-77/2 SWW 1156-32 CM] 1 M,5 1 5,3 S*13 U klad scalony w obudowie typu CE12 CB-85 1 — anoda, 2 — katoda Schem at elektryczny ZASTOSOW ANIE DANE TECHNICZNE Uklad jest przeznaczony do zasilania w araktorow (diod pojemnosciowych) pracuj^cych w glowicach odbiornikow
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UL1550L
CB-85)
UL1550L
UL1550
PN-73/E-04550.
Scans-048
UL1550-II
DSAGER0007
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UL1550
Abstract: cb85 1550LI
Text: 19-77/2 UKLAD SCALONY ANALOGOWY UL1550L SWW 1156-32 nsn 1 *0,5 / ' « 5,3 s /J U k la d sc a lo n y w o budow ie ty p u CE12 CB-85 1 — an o d a, 2 — k a to d a S c h e m a t e le k try c z n y ZASTOSOYVANIE DANE TECHNICZNE U k la d je s t p rz ez n ac zo n y do z a s ila n ia w a ra k to ro w (diod
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UL1550L
CB-85)
j45kSl
UL1550L
wsp61czynnik
PN-73/E-04550.
UL1550
cb85
1550LI
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BB105
Abstract: BB105A bb105g WARIKAP diody SOD-23 PD2824 ce37 ma373 BB105A/B
Text: WARIKAP ¥ BB105A, BB105G SWW 1156-151 D iody k rz em o w e e p ip la n a rn e o z m ien n ej pojem n o sci p rz ez n ac zo n e do p ra c y w u k la d z ie glow icy U H F w o d b io rn ik a c h tele w iz y jn y c h i rad io w y ch . 1 3 tf m a x 0,5 max2,5
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BB105A,
BB105G
BB105G
BB105
BB105A
WARIKAP
diody
SOD-23
PD2824
ce37
ma373
BB105A/B
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AAP153
Abstract: 2XAAP153 DIOD DIODA
Text: 3 - 74/1 DIODA UNIWERS ALN A AAP153Ì 2XAAP153 SWW 1156-121 D ioda g e rm a n o w a o strzo w a AA P153 je st p rzezn aczo n a do sto so w an ia glów nie w u k ia d a c h d e te k cy jn y c h , p o m ia ro w ych i zabezpieczaj^cych. D iody AAP153 d o b iera n e p a ra m i sq stosow ane w o d b io rn ik a c h PM w u k iad z ie d e te k to ra stosunkow ego.
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AAP153
2XAAP153
tamb-25
2XAAP153
DIOD
DIODA
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Optocouplers App Note
Abstract: diod zo
Text: T I L 1 18-1, T I L 1 18-2, TIL118-3 OPTOCOUPLERS D 1 6 0 7 , NOVEMBER 1 9 7 3 -R E V IS E D JULY 1 9 8 9 Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor High Direct-Current Transfer Ratio High-Voltage Electrical Isolation . . . 3.5 3 kV
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TIL118-3
Optocouplers App Note
diod zo
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSF3300/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3300 WaveFET Power Surface Mount Products T HDTMOS Single N-Channel Field Effect Transistor u T SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 m fl TMOS W aveFET™ de vice s are an ad van ced se rie s of po w e r M O SFETs w h ich utilize M o to ro la ’s
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MMSF3300/D
MMSF3300
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTDF2N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTDF2N06HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs which
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MTDF2N06HD/D
MTDF2N06HD
46A-02
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Diod UG
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSF3205/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3205 Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS RDS on = 0.015 OHM
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MMSF3205/D
MMSF3205
Diod UG
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Untitled
Abstract: No abstract text available
Text: HD74LVC16240 16-bit Buffers / Line Drivers with 3-state Outputs HITACHI ADE-205-118 Z Rev.O October 1995 Description The HD74LVC16240 has sixteen inverter drivers with three state outputs in a 48 pin package.This device is a inverting buffer and has two active low enables (1G to 4G). Each enable independently controls four
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HD74LVC16240
16-bit
ADE-205-118
HD74LVC16240
HD74LV
C16240
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MM57410
Abstract: ci 4093 CI 7410 mm57 TTL 7410 4093 ic 74 LS 47N
Text: Koder/dekoder M M 5 7 4 1 0 - d w u przew odo w a m agistrala s t e r u j q c a -Dzi$ki ukladow i M M 57410 mozna realizow ad, przy m inim alnej ilosci innych elem en to w , nadajniki i odbiorniki do szeregow ej transm isji sygnatow .
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MM57410
MM57410jest
ci 4093
CI 7410
mm57
TTL 7410
4093 ic
74 LS 47N
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M MFT1N10E N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T
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MMFT1N10E/D
MFT1N10E
OT-223
318E-04
O-261AA
OT-223
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M M DF2C02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 02H D Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors MiniM OS™ d e vice s are an ad van ced se rie s o f po w e r M O SFETs
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DF2C02HD/D
MMDF2C02HD/D
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Untitled
Abstract: No abstract text available
Text: H D 7 4 L V C R 2 2 4 5 A Octal Bidirectional Transceivers with 3-state Outputs HITACHI ADE-205-235A Z Preliminary 2nd. Edition January 1999 Description The HD74LVCR2245A has eight buffers with three state outputs in a 20 pin package. When (T / R) is high, data flows from the A inputs to the B outputs, and when (T / R) is low, data flows from the B inputs
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ADE-205-235A
HD74LVCR2245A
HD74LV
CR2245A
FP-20DA
TTP-20DA
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ir receiver diod
Abstract: IR3R42 IR3C02 IR3C09 28-SD IR3C07 IR3C02A IR3C08
Text: SPECIAL FUNCTION ICs ★ Under development • ICs for Infrared R em ote C o n tro llers 4, - Description NhMMNo. - - : . ■ — . IR3T24/N Infrared signal receiver pre-am p. Photo d io d e directly connectab le output pulse : active “ Low ”
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IR3T24/N
132-segment
128-segment
IR3T26/N
LR37181
sigIR3C07/N
IR3C08/N
IR3C09
IR3C10
IR3C11
ir receiver diod
IR3R42
IR3C02
28-SD
IR3C07
IR3C02A
IR3C08
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BYW 90
Abstract: l200c 1200C dioda ZTF 160 soae
Text: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A, (R) 1H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT D T 'ô 3 ~ Z I 59C 022 HIGH EFFICIENCY SUPERSWITCH
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I71H1237
BYW 90
l200c
1200C
dioda
ZTF 160
soae
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BA423
Abstract: No abstract text available
Text: blE D • bbâB^Bl DD2blb3 MST M A P X N AUER PHILIPS/DISCRETE BA423 _ SILICON A.M. BAND SWITCHING DIODE The BA 423 is a switching diode in hermetically sealed glass DO-34 envelope. Intended for band switching in a.m. radio receivers. Q U IC K R E F E R E N C E D A T A
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BA423
BA423
DO-34
OD-68
DO-34)
7Z83041
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BA423
Abstract: No abstract text available
Text: blE D • bbâB^Bl DD2blb3 MST M A P X N AUER PHILIPS/DIS CRET E BA423 _ SILICON A.M. BAND SWITCHING DIODE The BA 423 is a switching diode in hermetically sealed glass DO-34 envelope. Intended for band switching in a.m. radio receivers. Q U IC K R E F E R E N C E D A T A
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BA423
BA423
DO-34
OD-68
DO-34)
7Z83041
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111EF
Abstract: BYW 200 diodes byw 78 100 T03A diode BYW 66 78150
Text: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A , (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 022 D T 'ô 3 ~ Z I HIGH EFFICIENCY V SUPERSWITCH
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CB-425)
CB-262)
CB-262
QDD53t
CB-19)
CB-428)
CB-244
111EF
BYW 200
diodes byw 78 100
T03A
diode BYW 66
78150
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