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    DIOD 800A Search Results

    DIOD 800A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIOD 800A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    irf 792

    Abstract: GA400TD25S
    Text: PD -5.051B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD25S Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses


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    GA400TD25S 10kHz irf 792 GA400TD25S PDF

    diod t4

    Abstract: p j 85 diod GA400TD25S t4 diod INT-A-PAK Dual weight diod 800A
    Text: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses


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    -50051D GA400TD25S 10kHz diod t4 p j 85 diod GA400TD25S t4 diod INT-A-PAK Dual weight diod 800A PDF

    GA400TD25S

    Abstract: No abstract text available
    Text: PD -50051C GA400TD25S "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses


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    -50051C GA400TD25S 10kHz Colle52-7105 GA400TD25S PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses


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    -50051D GA400TD25S 10kHz 85ded 08-Mar-07 PDF

    GA400TD25S

    Abstract: No abstract text available
    Text: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses


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    -50051D GA400TD25S 10kHz 12-Mar-07 GA400TD25S PDF

    bu2527af

    Abstract: wk16412 WK16413 WK16414 Tesla katalog VQE24 VQE14 4DR823B kr206 5DR801B
    Text: Pøehled diskrétních polovodièových souèástek TESLA a dalších dovážených typù z nìkdejší RVHP TRANZISTORY TYRISTORY • TRIAKY • DIAKY DIODY • LED • DISPLEJE OPTOÈLENY a další prvky … spolu s náhradami … a nejpoužívanìjší standardní


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    roku1984/85, VQB200 VQB201 VQC10 VQE11 VQE12 VQE13 VQE14 VQE21 VQE22 bu2527af wk16412 WK16413 WK16414 Tesla katalog VQE24 4DR823B kr206 5DR801B PDF

    SD51

    Abstract: UNITRODE schottky 400MS
    Text: SD51 POWER SCHOTTKY RECTIFIERS 120 Amp Pk, 45V FEATURES DESCRIPTION • • • • • T he S D 5 1 h a s a S ch o ttk y barrier junction an d is ideally suited for.output rectifiers an d catch diod e s in low voltage power sup p lies. T he Unitrode h igh cond u ctivity design, u sin g a heavy


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    3R5S

    Abstract: No abstract text available
    Text: FUJI ;± m « i Fuji New Semiconductor Products 1800V/800A/1 ± * § S IG B T iy n .- A ' 1 M B I 8 0 0 P N MB - 1 8 0 IGBT Low loss • high speed switching IGBT Modules H 4^ JH Features * ¡ ¡¡REEv High voltage, high current • 7 ^ High speed sw itching


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    800V/800A/1 3R5S PDF

    igbt 400A, 1200V mitsubishi

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM400HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of one IGBT in a single co nfig ura ­ tion w ith a reverse-connected super-fast recovery free-w heel diode.


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    CM400HA-24H igbt 400A, 1200V mitsubishi PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM400HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura­ tion with a reverse-connected su­ per-fast recovery free-wheel diode.


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    CM400HA-24H PDF

    diod m4

    Abstract: diode LT 42
    Text: MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de­ signed fo r use in sw itching a pp lica ­ tions. Each m odule consists of one IGBT in a single configuration with a reverse-connected su pe r-fa st re­


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    CM400HA-28H -800A diod m4 diode LT 42 PDF

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


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    11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 PDF