diod zener
Abstract: SK 618 120 1.5KE-33A 5KE220A 5KE22A 5KE30A 5KE33A 5KE43A 5KE91A 5KE12A
Text: 2001-08-15 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-148-48 1.5KE6.8A trans sk diod 70-149-05 1.5KE12A trans sk diod 70-149-21 1.5KE15A trans sk diod 70-149-39 1.5KE16A trans sk diod
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5KE12A
5KE15A
5KE16A
5KE18A
5KE22A
5KE30A
5KE33A
5KE43A
5KE56A
5KE91A
diod zener
SK 618 120
1.5KE-33A
5KE220A
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25F80
Abstract: P 1000V diod 25F10 25F100 25F120 25F20 25F40 25F60 25FR10 25FR100
Text: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-360-07 25F10 diod 25A 100V 70-360-15 25F100 diod 25A 1000V 70-360-23 25F120 diod 25A 1200V 70-360-30 25F20 diod 25A 200V
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25F10
25F100
25F120
25F20
25F40
25F60
25F80
25FR10
25FR100
25FR120
P 1000V diod
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ISO9002
Abstract: ISO-1401 ISO-14001 ISO-9000 ISO-9002 ISO14001
Text: FOR IMMEDIATE RELEASE Diodes Manufacturing Receives Environmental Management Certification ISO-14001 Westlake Village, California – November 28, 2000 – Diodes Incorporated Nasdaq: DIOD , a leading manufacturer and supplier of high quality discrete semiconductors,
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ISO-14001
ISO-14001
ISO9002
ISO-1401
ISO-9000
ISO-9002
ISO14001
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ISO-9000
Abstract: No abstract text available
Text: FOR IMMEDIATE RELEASE Diodes, Inc. to Acquire Wafer Fab FabTech, Inc. to Support Development of Value-added Product Lines Westlake Village, California – October 30, 2000 – Diodes Incorporated Nasdaq: DIOD , a leading manufacturer and supplier of high quality discrete semiconductors,
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ISO-14001
Abstract: ISO-9000
Text: FOR IMMEDIATE RELEASE Diodes Incorporated Comments on First-Quarter Outlook Westlake Village, California, March 9, 2001 – Diodes Incorporated Nasdaq: DIOD today said that net income for the first quarter of 2001 will be lower than previously expected due to
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led diod datasheet
Abstract: No abstract text available
Text: FOR IMMEDIATE RELEASE Diodes, Inc. Announces Successful Completion of FabTech Acquisition C.H. Chen Discusses Expectations for Fourth Quarter and 2001 Westlake Village, California – December 5, 2000 – Diodes Incorporated Nasdaq: DIOD , a leading manufacturer and supplier of high quality discrete semiconductors,
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ISO-9000
Abstract: No abstract text available
Text: FOR IMMEDIATE RELEASE Diodes, Inc. Launches Next Generation Product Lines Offers Customized Configurations of Ultra-miniature, Multi-pin Arrays Westlake Village, California – September 5, 2000 – Diodes Incorporated Nasdaq: DIOD , a leading manufacturer and supplier of high quality discrete semiconductors, primarily to the
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SC-70
OT-363
ISO-9000
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ISO-14001
Abstract: ISO-9000
Text: FOR IMMEDIATE RELEASE Diodes, Inc. Reports Fourth Quarter and Record Year End Results ♦ Revenues for 2000 rise to record $118 million, up 49% from 1999 ♦ Net Income for the year up 168% as compared to 1999 Westlake Village, California, January 31, 2001 – Diodes Incorporated Nasdaq: DIOD , a
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2 Wavelength Laser Diode
Abstract: RLD2WMNL2 ROHM Product Guide Product Catalog Laser Diode for dvd dvd laser Laser Diode for dvd cd
Text: New Product Bulletin Low Output 2-Wavelength Laser Diode for DVD/CD Playback Energy Saving RLD2WMNL2 Series Low operating current and guaranteed operation up to 85˚C - ideal for car navigation and DVD systems Product Outline ROHM ’s dual-wavelengt h lase r diod e was designe d for DV D an d navigatio n system s expose d to hars h
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52F6248E
2 Wavelength Laser Diode
RLD2WMNL2
ROHM Product Guide Product Catalog
Laser Diode for dvd
dvd laser
Laser Diode for dvd cd
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303 diod
Abstract: ISO-9000
Text: Contact Information: Coffin Communications Group 15300 Ventura Boulevard, Suite 303 Sherman Oaks, CA 91403 818 789-0100 Crocker Coulson, Account Executive Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village CA 91362 (805) 446-4800 Carl Wertz, Chief Financial Officer
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ISO-9000
303 diod
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LCD 2X16
Abstract: IEC60870-5-101 dwa 106 n 161 CZIP-3H ABB TZN 124 IEC-60870-5-101 siemens transformator IEC255 rs485 SIEMENS DNP prostowniki
Text: SPIS TREŚCI 1. WSTĘP. 4 2. OGÓLNA CHARAKTERYSTYKA SYSTEMU CZIP . 5
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ISO-9000
Abstract: No abstract text available
Text: Contact Information: Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village CA 91362 805 446-4800 Carl Wertz, Chief Financial Officer Coffin Communications Group 15300 Ventura Boulevard, Suite 303 Sherman Oaks, CA 91403 (818) 789-0100 Crocker Coulson, Account Executive
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SLD104U
Abstract: SLD-104U sld-104
Text: SLD104AU SONY GaAIAs Laser Diode Description SLD104A U is a low-noise visible laser diodé' developed for positive power supplies. In com parison with SLD104U this device attains even lower consumption levels. Features • • • • Low power consumption
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SLD104A
SLD104U
SLD104AU
E89418A
SLD-104U
sld-104
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Untitled
Abstract: No abstract text available
Text: S G S'IC S -T H Q M SO N . 59C D I 7 C12CJ237 02713 O THOMSON-CSF ÜGG2713 D T-GMP5/5A/5B DIVISION SEMICONDUCTEURS UNIDIRECTIONAL TRAN SIEN T VOLTAGE SU PPRESSO RS DIOD ES D E PROTECTION UNIDIRECTIONNELLES TRANSIL Pp : 60OW/1ms expo. 7,2kW/8-20^s expo. TRANSIENT VOLTAGE SUPPRESSOR DIODES ESPECIALLY
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GG2713
600w/1
2kW/8-20
60OW/1ms
2kW/8-20
C------150
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML4XX23 SERIES AIGaAs LASER DIODES TYPE NAME FEATURES DISCRIPTION M L4X X 23 is a AIG aA s laser diod es w hich p rovides a stable, •L o w single • S m a ll astig m atic distance tra nsverse m ode o scillatio n w ith em ission w avelength
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ML4XX23
780nm
L4XX23
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laser DFB low beam divergence 1550nm 10mW
Abstract: dfb 10mw
Text: MITSUBISHI LASER DIODES ML9XX13 SERIES InGaAsP —MQW—DFB LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X13 series are M Q W * — D F B * laser diod es em itting • E x c e lle n t low distortion cha racte ristic C S O typical-5 5dB c/C T B typical-6 0dB c
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ML9XX13
1550nm
L99213
laser DFB low beam divergence 1550nm 10mW
dfb 10mw
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mitsubishi cab
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML7XX4 SERIES InGaAsP —MQW—DFB LASER DIODES TYPE NAME FEATURES DESCRIPTION M L7X X4 series are M Q W * — D F B * laser diod es em itting • E x c e lle n t low disto rtion cha racte ristic C S O typica l-60d B c/C T B typica l-65d B c
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l-60d
l-65d
78-channel
1310nm
L7924
mitsubishi cab
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laser DFB 1310nm 10mW
Abstract: ML7924 laser diodes for optical source
Text: MITSUBISHI LASER DIODES ML7XX4 SERIES InGaAsP—MQW—DFB LASER DIODES TYPE NAME FEATURES DESCRIPTION M L7X X4 series are M Q W *— D F B * ' laser diod es em itting • E x c e lle n t low distortion cha racte ristic C S O typica l-60d B c/C T B typica l-65d B c
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1310nm.
ML7924
typical-60dBc/CTB
typical-65dBc
78-channel
laser DFB 1310nm 10mW
laser diodes for optical source
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML9XX13 SERIES InG aA sP -M Q W -D FB LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X13 series are M Q W * — D F B * laser diod es em itting • E x c e lle n t low distortion cha racte ristic C S O typica l-55d B c/C T B typica l-60d B c
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ML9XX13
l-55d
l-60d
1550nm
L99213
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laser DFB 1550nm 10mW
Abstract: laser DFB 1550nm 10mW single laser DFB low beam divergence 1550nm 10mW laser diode 10mw 1550nm ML99213 ML9XX13 dfb 10mw DFB CATV 1550nm laser diode relative intensity noise R4045
Text: MITSUBISHI LASER DIODES ML9XX13 SERIES In G a A s P -M Q W -D F B LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X13 serie s are M Q W *— D F B * laser diod es em itting • E x c e lle n t low distortion cha racte ristic C S O typica l-55d B c/C T B typica l-60d B c
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ML9XX13
1550nm.
ML99213
typical-55dBc/CTB
typical-60dBc
78-channel
inten50
ra-170
laser DFB 1550nm 10mW
laser DFB 1550nm 10mW single
laser DFB low beam divergence 1550nm 10mW
laser diode 10mw 1550nm
dfb 10mw
DFB CATV
1550nm laser diode relative intensity noise
R4045
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IRKC56
Abstract: IRKD250-16 IRKC196-16 IRK091/06 IRKD91/16A
Text: In t e r n a t io n a l R e c t i f i e r I Diodes PART NUMBER CtntorTap» Contar Tap » Common Ctthod* CommonAnode Douttir VRRM V '3Ï w •PSI»!») SOHz 60 Hi TO <A> (24) (21) VFM RthJCDC (K/W) Nom (V) Fm -oo - Drnimd Numbtr ni Power Modul» • Diod*/Dlod«
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IRKD56/04
IRKD56/06
IRKD56/08
IRKD56/10
IRKD56/12
IRKD56/14
IRKD56/16
IRKD71/04
IRKD71/06
IRKD71/08
IRKC56
IRKD250-16
IRKC196-16
IRK091/06
IRKD91/16A
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BYW 90
Abstract: l200c 1200C dioda ZTF 160 soae
Text: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A, (R) 1H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT D T 'ô 3 ~ Z I 59C 022 HIGH EFFICIENCY SUPERSWITCH
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I71H1237
BYW 90
l200c
1200C
dioda
ZTF 160
soae
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111EF
Abstract: BYW 200 diodes byw 78 100 T03A diode BYW 66 78150
Text: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A , (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 022 D T 'ô 3 ~ Z I HIGH EFFICIENCY V SUPERSWITCH
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CB-425)
CB-262)
CB-262
QDD53t
CB-19)
CB-428)
CB-244
111EF
BYW 200
diodes byw 78 100
T03A
diode BYW 66
78150
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ITRON DC 205
Abstract: SF3305
Text: MOTOROLA Order this document by MMSF3305/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3305 Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 8 AMPERES 30 VOLTS W aveFET devices are an advanced series of pow er M O SFETs
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MMSF3305/D
MMSF3305
ITRON DC 205
SF3305
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