LCD 2X16
Abstract: IEC60870-5-101 dwa 106 n 161 CZIP-3H ABB TZN 124 IEC-60870-5-101 siemens transformator IEC255 rs485 SIEMENS DNP prostowniki
Text: SPIS TREŚCI 1. WSTĘP. 4 2. OGÓLNA CHARAKTERYSTYKA SYSTEMU CZIP . 5
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Abstract: No abstract text available
Text: IRLM220A N-Channel A-FET 200 V, 1.13 A, 800 mΩ FEATURES BVDSS = 200 V ν Avalanche Rugged Technology RDS on = 0.8 Ω ν Rugged Gate Oxide Technology ν Lower Input Capacitance ID = 1.13 A ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
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IRLM220A
OT-223
IRLM220ATF
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CN100 connector
Abstract: diod m4 324W
Text: HRPG-300 300W Single Output with PFC Function series Features : Universal AC input / Full range Built-in active PFC function, PF>0.95 High efficiency up to 89% typ. Withstand 300VAC surge input for 5 seconds Protections: Short circuit / Overload / Over voltage / Over temperature
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HRPG-300
300VAC
HRPG-300-3
HRPG-300-5
HRPG-300-7
HRPG-300-12
HRPG-300-15
HRPG-300-24
HRPG-300-36
HRPG-300-48
CN100 connector
diod m4
324W
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L0122
Abstract: diod xm BPYP21 CQYP52
Text: 9-74/3 OSWIETLACZ ELEKTROLUMINESCENCYJNY CQYP52 SWW 1156-6 Oswietlacz elektroluminescencyjny sklada si§ z dziewiQciu elektroluminescencyjnych diod dyfuzyjnych wykonanych z arsenku galu i stanowi^cych zrödla promieniowania podczerwonego. Jest on przeznaczony l^cznie z fototranzystorem BPYP21
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CQYP52
BPYP21
L0122
diod xm
CQYP52
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Untitled
Abstract: No abstract text available
Text: S G S'IC S -T H Q M SO N . 59C D I 7 C12CJ237 02713 O THOMSON-CSF ÜGG2713 D T-GMP5/5A/5B DIVISION SEMICONDUCTEURS UNIDIRECTIONAL TRAN SIEN T VOLTAGE SU PPRESSO RS DIOD ES D E PROTECTION UNIDIRECTIONNELLES TRANSIL Pp : 60OW/1ms expo. 7,2kW/8-20^s expo. TRANSIENT VOLTAGE SUPPRESSOR DIODES ESPECIALLY
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GG2713
600w/1
2kW/8-20
60OW/1ms
2kW/8-20
C------150
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71005
Abstract: 100 Volt mosfet schematic circuit OM9005SD OM9006SD
Text: 43E D OM9005SD OM9006SD [=70^073 Q0DD772 1 • OMNI HERMETIC MOSFET POWER MODULE OMNIREL CORP 160 Watt Power Module, 100/60 Volt, N-Channel MOSFETs With Power Schottky«^ DiodèàAnd High Speed R ectifiers FEATURES • • • • • • • Dual Inline 16 Pin Hermetic Power Package
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00DD772
OM9005SD
OM9006SD
Z-31-Z7
71005
100 Volt mosfet schematic circuit
OM9006SD
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Untitled
Abstract: No abstract text available
Text: 43E D • OM9005SD OM9006SD b 7 Ô S G 7 3 □ □ □ □ 7 7 2 1 ■ OMNI HERMETIC MOSFET POWER MODULE O M N I R E L CORP 160 Watt Power Module, 100/60 Volt, N-Channei MOSFETs W ith Power S c h o ttk y v Diodéa And High Speed Rectifiers* T-3H-Z1 FEATURES
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OM9005SD
OM9006SD
OM9006SD
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Untitled
Abstract: No abstract text available
Text: 2SJ529 L ,2SJ529(S) Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-654A (Z) 2nd. Edition June 1, 1998 Features • Low on-resistance R ds(oii) = 0.12 £2 typ. • 4 V gete drive devices • High speed switching Outline D P A K -2 I I
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2SJ529
ADE-208-654A
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M5261L
Abstract: No abstract text available
Text: MITSUBISHI <ANALOG ASSP> M5261L LOW SATURATION OUTPUT TYPE CURRENT DRIVER DESCRIPTION M 5 2 6 1 L is a d u a l D a rlin g to n c u rre n t d riv e r s e m ic o n d u c to r PIN CONFIGURATION (TOP VIEW n te g ra te d c irc u it) w h ic h c o n s is ts o f P N P a n d N P N tra n s is to rs
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M5261L
M5261L
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M5271
Abstract: 5271L
Text: MITSUBISHI <ANALOG ASSP> M 5271L LOW SATURATION OUTPUT T Y P E CURREN T D RIV ER DESCRIPTION M 5 2 7 1 L is dual D arlington current driver sem iconductor PIN CONFIGURATION (TOP VIEW integrated circuit) w h ich consists o f PNP and NPN transistors w ith clam p diode and it can be driven directly from 5V -typ e
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5271L
M5271
5271L
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Untitled
Abstract: No abstract text available
Text: 2SK2796 L , 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R ds(oii) = 0.12Í2 typ. • 4V gate drive devices. • High speed switching Outline DPAK |1 Í I 1. 2. 3. 4. G ate Drain S ource Drain ADE-208-534C (Z)
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2SK2796
ADE-208-534C
2SK2796Ã
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Untitled
Abstract: No abstract text available
Text: CA3140, CA3140A h a r ® J S E M I C O N D U C T O R • M M ■ 4 .5 MHz, BiMOS Operational Amplifier November 1996 with M OSFET Input/Bipolar Output Features Description • MOSFET Input Stage The CA3140A and CA3140 are integrated circuit operational ampli
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CA3140,
CA3140A
CA3140A
CA3140
-10pA
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <ANALOG ASSP> M 5271L LOW SATURATION OUTPUT T Y P E CURREN T DRIVER DESCRIPTION M 5 2 7 1 L is dual D arlington current driver sem iconductor PIN CONFIGURATION (TOP VIEW integrated circuit) w h ich consists o f PNP and NPN transistors w ith clam p diode and it can be driven directly from 5 V -type
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5271L
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FX105AP3
Abstract: 1035B 000M53 1N914 FX105A FX105AD4 FX105P IN914
Text: r=ft irjUn] CML Semiconductor Products >i Tone Detector F X 105A D/105A/3 December 1995 1.0 1.1 Features Advance Information Operates in High Noise Conditions Adjustable Bandwidth > 36dB Signal Input Range Adjustable Frequency High Sensitivity Wide Voltage Range (2.7V to 5.5V
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FX105A
D/105A/3
FX105A
FX105AD4
16-pin
FX105AP3
1035B
000M53
1N914
FX105P
IN914
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B209
Abstract: B-209
Text: M B 200 thru M B 206 M B 207 thru MB213 ^ tKliPÉ¡F Microsemi Corp. The ûtode experts SANTA ANA, CA F o r m ore in fo rm a tio n call: 714 979-8220 RECTIFIERS FEATURES • • • • • • • M ic ro m in ia tu re packag e. V oidless h e rm e tic a lly s ea led glass package.
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MB213
-S-19
MB213
B209
B-209
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power mosfet 900v
Abstract: diode a42
Text: PRO D UCT C Â T Â IO » Æ litT O Ïl N -CHANNEL ENHANCEMENT MOS FET 900V, 11A , 0 . 9 5 n SDF11N90 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES
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SDF11N90
power mosfet 900v
diode a42
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Untitled
Abstract: No abstract text available
Text: SOLID STATE DEVICES INC 35 E D CO T S S '-Z PART N UM BER PACKAGE REVERSE V O LTA G E PHOTO C URRENT C A P A C IT A N C E REVERSE C URREN T B R EAK D O W N V O LTAG E SPD15 11-1-XX SPD1511-2-XX SPD6001 SPD9441 T0-18 TO-39 TO-5 AX. LEAD 120 V 120 V 90 V 500 V
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SPD15
11-1-XX
SPD1511-2-XX
SPD6001
SPD9441
T0-18
200nA
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TRANSISTOR J 5804 NPN
Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Text: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV
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1N5615,
1N5616,
1N5617,
1N5618,
1N5619,
1N5620,
1N5767
1N5802
1N5802,
1N5804,
TRANSISTOR J 5804 NPN
TRANSISTOR J 5804
TRANSISTOR J 5803
j 5804 transistor
1N6621
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2SK1671
Abstract: No abstract text available
Text: 2SK1671 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • N o secondary breakdow n • Suitable for sw itching regulator, D C - DC converter and m otor drive
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2SK1671
2SK1671
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Untitled
Abstract: No abstract text available
Text: Æwtran PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 848-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 200V, SYMBOL UNITS Drain-source Vo 1t .(1) Dra in -Ga te Vo 1tage (Rgs = 1•O M n ) Cl)
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D0Q3T31
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t25000
Abstract: QM10HB-2H
Text: MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR _ INSULATED TYPE 1 j j QM10HB-2H • lc Collector c u rre n t. 10A • V cex Collector-em itter v o lta g e . 1000V j
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QM10HB-2H
E80276
E80271
t25000
QM10HB-2H
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Untitled
Abstract: No abstract text available
Text: DE I TG^TESD 001b:L33 fl | TOSHIBA {DIS C RE TE /O PTO } 9097250 TOSHIBA <DISCRETE/OPTO TO SHIBA 90D 16133 SEMICONDUCTOR ~r-33-‘Z'7 D TOSHIBA GTR MODULE M G 50 H2 YS 1 TECHNICAL DATA SILICON N CHANNEL 1GBT HIGH POWER SWITCHING APPLICATIONS. riOTOR CONTROL APPLICATIONS.
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r-33-â
001blB7
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Untitled
Abstract: No abstract text available
Text: ICL7121 HARRIS S E M I C O N D U C T O R 16-Bit Multiplying Microprocessor-Compatible D/A Converter O cto b e r 1997 Description Features 1 6 -B it R eso lu tion T he ICL7121 achieves 0.0 03% linea rity w ith o u t laser trim m in g by com b in ing a four q u a d ra n t m ultiplying DAC
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ICL7121
16-Bit
ICL7121
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: IH5140 thru IH5145 S em iconductor High-Level CMOS Analog Switches April 1999 Feature escription • Super Fas1 he IH5140 Fam ily of C M O S sw itches utilizes H arris’ latchbe junction isolated processing to build the fastest sw itches currently available. T hese sw itches can be toggled at a rate of
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IH5140
IH5145
100pA
IH5040
DG180
235Hz
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