SM7060
Abstract: 140MHz IF demodulator IC SD7060 SD706 AN993 ISL83700EVAL ISL83740EVAL ISL87060 ISL87060DIK DIN616
Text: Intersil's ISL83700EVAL and ISL83740EVAL Evaluation Kits provide a means to efficiently evaluate the performance of the ISL837030/ISL83740 Modem Reference Designs and ISL87060 Modem Chip Set. This kit includes everything needed to exercise and monitor the performance of the modem in a laboratory environment.
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ISL83700EVAL
ISL83740EVAL
ISL837030/ISL83740
ISL87060
ISL83700EVAL,
ISL83740EVAL
AN9934
ISL837030/ISL83740
SM7060
140MHz IF demodulator IC
SD7060
SD706
AN993
ISL87060DIK
DIN616
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BV725
Abstract: BV726 SKIC2001 semikron SKIC SKIC2001A u416 LM78C LM78C05ACM GL11 RESISTOR ARRAY GL11
Text: Values Units 18 V SEMIDRIVER IGBT Driver Circuit SKIC 2001 6 V Preliminary Data VDD5V + 0,3 GND - 0,3 13,5 V V V 50 – 25 . + 85 kHz °C Values Units 15 + 5 % 5+5% 9,99 . 10,01 V V V 3 15 860 mA mA ns Absolute Maximum Ratings Ta = 25 °C Symbol Term
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VDD15V
VDD15V)
\MARKETIN\FRAMEDAT\datbl\Treiber\Skic2001
BV725
BV726
SKIC2001
semikron SKIC
SKIC2001A
u416
LM78C
LM78C05ACM
GL11 RESISTOR ARRAY
GL11
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HALL EFFECT 21E
Abstract: thyristor aeg aeg thyristor transistor Common Base configuration general electric C22B equivalent transistor bc 172 b aeg 2101 thyristor bipolar power transistor data BC 148 TRANSISTOR sot-23 npn marking code cr
Text: Bipolar Power Transistor Data Book 1996 Semiconductors TELEFUNKEN Semiconductors Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selector Guide, Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Pertinax
Abstract: DIN41869 sot23 rthjc
Text: Assembly Instructions D Reduction of the component-mounting costs by fully General automatic mounting Semiconductor devices can be mounted in any position. The terminal length may be bent at a distance greater than 1.5 mm from the package provided no mechanical force
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HALL EFFECT 21E
Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
Text: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material
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26-Feb-97
HALL EFFECT 21E
thyristor aeg
transistor SMD 12E
transistor Common Base configuration
TRANSISTOR SMD MARKING CODE 2s
aeg thyristor
NPN transistor bc 148
lg smd transistor
diode marking code YF
MARKING SMD TRANSISTOR GG
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Pertinax
Abstract: No abstract text available
Text: VISHAY _ Vishay Telefunken ▼ Assembly Instructions General Surface Mounted Devices S em iconductor devices can be m ounted in any position. The term inal length may be bent at a distance greater than 1.5 mm from the case provided no
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Untitled
Abstract: No abstract text available
Text: EUPE<: 52E D • BmDBST? DOOObMô ^ 2 ■ UPEC T15.1N 7^ z5 - / 5 Typenrelhe/Type range T 15.1 N 400 600 Elektrische Eigenschaften Electrical properties Hochstzulässige Werte Vdrm, VrrM Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver DurchlaBstrom
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T-91-20
0000fl3Ã
5x315
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150L120A
Abstract: 150LA 45L100 2088a BS3934 cr 29c BS9300 45L15 150K-A 150L80A
Text: 73 DE|4fi5545H 0007350 3 | Data Sheet No. PD-2.088A 73C 07350 4855452 INTERNATIONAL RECTIFIER D T -a /-3-/ in t e r n a t io n a l r e c t if ie r 45L, 15QK-A, 1SOL-A, 150K5 SERIES 1 5 0 Amp Power Silicon Rectifier Diodes Description Major Ratings and Characteristics
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150K-A,
150L-A,
150KS
150K-A/150KS
150L-A/45L
152K-A
V1/2-20
152L-A
3/8-24-UNF-2A
150L120A
150LA
45L100
2088a
BS3934
cr 29c
BS9300
45L15
150K-A
150L80A
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ips 500w circuit diagram
Abstract: DIN41892 T13F 90A2s
Text: 0 0 2 94 26 A E G ai CORP "de"! □ D a i 4 ah ÜOGSTflB 0 ! “ T~-J?£-/S T 13 F 100 * Typenreihe/Type range T 13F Elektrische Eigenschaften Electrical properties 200 Höchstzulässige Werte Maximum permissible values U drmi U rrm Periodische Vorwärts- und
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DIN41814
Abstract: No abstract text available
Text: fil D E l G D E T M E b Typenreihe/Type range A1050S E le k trisch e Eig en sch aften E le ctrica l properties H ö ch stzu lä ssig e Werte Periodische VorwärtsU d rm Spitzensperrspannung Periodische RückwärtsU rrm Spitzensperrspannung Rückwärts-Stoßspitzenspannung
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DDP517a
A1050S
DIN41814â
155B4
DIN41814
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diode 242
Abstract: rts 1620 DIN41814-155B4 AEGG DIN41814
Text: A E Ö- AK T I E N G E S EL L S C H A F T fllC D □02^415 G0QST71 4 • AE6£ A 930 S A930S E le ktrisch e Eigenschaften E le ctrica l properties H ö ch stzu lä ssig e Werte Periodische VorwärtsU dhm Spitzensperrspannung Periodische RückwärtsU rrm
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DIN41814-155B4
diode 242
rts 1620
DIN41814-155B4
AEGG
DIN41814
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DIN41814
Abstract: DIN41814-151A4
Text: y T158S 200* 400 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Udrm , U rrm Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom I trmsm Dauergrenzstrom Itavm Maximum permissible values repetitive peak forward off-state
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T158S
-40oC.
DIN41814â
151A4
DIN41814
DIN41814-151A4
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T670 AEG
Abstract: T670F AEG T 250 N 700 IWF111 T670 DT700 AEG T 670 F U/25/20/TN26/15/850/T670F
Text: T 670 F A E G CORP fil T670F Elektrische Eigenschaften Electrical properties H öchstzulässige Werte U d r m i U r r m Periodische Vorwärts-und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom It r m s m Dauergrenzstrom It a v m Maxim um perm issible values
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T670F
T670F
10lTlS
curre400
IWF111
T670 AEG
AEG T 250 N 700
T670
DT700
AEG T 670 F
U/25/20/TN26/15/850/T670F
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aeg T308
Abstract: AEG T 308 f T308 T308F 0588 DIN41814
Text: _ 0029426 A E G 81C 05882 CORP Û1 E G CORP D T '¿S " /? p F | o D 2 ci4 Eb □□□SflfiE 1 I T 3 0 8 F Typenrelhe/Type range_ T 3 0 8 F _ 200_ 400_ 500_ 600 Elektrische Eigenschaften
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T308F
T308F
di/dt60
aeg T308
AEG T 308 f
T308
0588
DIN41814
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70U30
Abstract: so42 70U40 diode 300U40A 70U120 300U40A 300u80 70U10 DIN41887 70U20
Text: _ INTERNATIONAL RECTIFIER T 73 | Data Sheg.t No. PD-2.090A 4A554S5 □□073Sti T-0 hX3 4 | INTERNATIONAL RECTIFIER IOR 7OU, 300U-A SERIES 8 5 0 and 3 0 0 Amp Avg Power Silicon Rectifier Diodes Major Ratings and Characteristics Description and Features
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300U-A
300U-A,
302U-A
K41-0232
-16UNF
DIN41887
A10U1
70U30
so42
70U40
diode 300U40A
70U120
300U40A
300u80
70U10
DIN41887
70U20
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DIN41892-201C3
Abstract: QDGS777 DIN41892
Text: G-AKTIENGESELLSCHAFT fllC D • 0D2c1415_0DD57?b b ■ AEGG T10F Typenreihe/Type range_T1 0 F 100* 200 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U dhmi U rrm Periodische Vorwärts-und Rückwärts-Spitzensperrspannung
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10msltv)
DIN41892-201C3
QDGS777
DIN41892
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diode S4 68a
Abstract: 3456B A198S DIN41814-151A4 A198 DIN41814
Text: AE G -A K T IEN G ESELLSC H A FT Ô 1CD H G O S T M IS D G D S T b H ? •A E G G A 198 S Typenreihe/Typerange_ A198S 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische VorwärtsU drm Spltzensperrspannung
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A198S
3456b
345sb
34s88
diode S4 68a
A198S
DIN41814-151A4
A198
DIN41814
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diode t318
Abstract: T318 R318A T318F
Text: T 3 1 8 F A E G CORP fll T ypenreihe/Type range_ T318 F _ 600_ 800 1000_ 1100_ E le k trisch e Eigen sch aften E le ctrica l properties H ö ch stzu lä ssig e W erte M axim um p e rm issib le v alues repetitive peak forward off-state
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T318FA
diode t318
T318
R318A
T318F
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RG11T
Abstract: diode T128 T128F DIN41814-151
Text: A E G - A K T I E NG ESEL LS CHAF T Ö1C D • GDETMIS DOOSaHb I M A E G G T 128 F 600 Typenreihe/Type range T128F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Udrmi Urrm Periodische Vorwärts-und Rückwärts-Spitzensperrspannung
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T128F
RG11T
diode T128
T128F
DIN41814-151
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DIN41814-151A4
Abstract: t178f
Text: A E G-AKTIENGESELLSCHAFT Ö1C D • GDSTMIS DÜGSÔSM O ^ A E G G T 178 F Typenreihe/Type ränge T178F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U d r m . U r r m Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom
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T178F
T178F
DIN41814-151A4
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diode T128
Abstract: 05852 aeg t128 aeg diode SO47 D-10 DIN41814 T128F T128 AEG T 25 N 1100
Text: 0029426 A E G A E G 81C 058 46 CQRP "aï CORP Typenreihe/Type range T 128 F 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drm, Urrm Periodische Vorwärts-und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom Itrmsm
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T128F
7IFrtMI02F
diode T128
05852
aeg t128
aeg diode
SO47
D-10
DIN41814
T128
AEG T 25 N 1100
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2T930
Abstract: T930S t930 DIN41814 T930S1600 6220a
Text: A E ¿ - A K T I E NG ESEL LS CHAF T SIC D B 002=1415 0005=54? 7 M A E SG T9 3 0 S Typenreihe/Type ränge T930S Elektrische Eigenschaften Electrical properties H öchstzulässige W erte U drm, U rrm Periodische Vorwärts-und Rückwärts-Spitzensperrspannung
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T930S
T930S
10rns
2T930
t930
DIN41814
T930S1600
6220a
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BU 508 transistor
Abstract: transistor bu Bu608A bu508 transistor BU 608 bu 508 sot-23 2603 transistor bc 488 BU608
Text: TELEFUNKEN ELECTRONIC 1?E D • fl^EOO^b DOQTMbS BU 508 •*BU 508 A ■¡rHUHFMMKIM electronic Cf«aliy«Technologies T -32-/3 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in color TV receive« Features: • In triple diffusiion technique
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DIN41859
15A3DIN
BU 508 transistor
transistor bu
Bu608A
bu508
transistor BU 608
bu 508
sot-23 2603
transistor bc 488
BU608
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BV726
Abstract: BV725 SKIC2001A semikron SKIC SKIC2001 LM78L05S u416 U427
Text: s e MIKRD n Values U nits 18 V SEMIDRIVER IGBT Driver Circuit SKIC 2001 6 V P re lim in a ry D ata V dd5V + 0>3 GND - 0,3 13,5 V V V 50 - 2 5 . + 8 5 kHz °C Values U nits 15 ± 5 % 5± 5% 9,99 . 10,01 V V V 3 15 860 mA mA ns Absolute Maximum Ratings Ta = 25 °C
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dD15V
IS15V
SCE237
OT-23)
AT\datbl\Treiber\Skic2001
BV726
BV725
SKIC2001A
semikron SKIC
SKIC2001
LM78L05S
u416
U427
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