CB417
Abstract: No abstract text available
Text: DIMENSIONS REF. Millimetres Min. Max. Min. Max. A 8.89 0.350 B 3.683 0.145 C 25.4 D OUTLINE AND MECHANICAL DATA Inches 1.000 1.092 0.043 CB417 C O /D July 1998 A C / B O O /D 0040109C
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CB417
0040109C
CB417
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CB417
Abstract: No abstract text available
Text: DIMENSIONS REF. Millimetres Min. Max. Min. Max. A 8.89 0.350 B 3.683 0.145 C 25.4 D OUTLINE AND MECHANICAL DATA Inches 1.000 1.092 0.043 CB417 C O /D July 1998 A C O / B O /D 0040109C
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CB417
0040109C
CB417
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CB417
Abstract: No abstract text available
Text: DIMENSIONS REF. Millimetres Min. Max. Min. Max. A 8.89 0.350 B 3.683 0.145 C 25.4 D OUTLINE AND MECHANICAL DATA Inches 1.000 1.092 0.043 CB417 C O /D May 2002 A C O / B O /D 0040109D
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CB417
0040109D
CB417
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5W zener sgs-thomson
Abstract: CB417 marking 683 zener diode 1n5359b 1N5388B zener 35b 1N5335B 1N5342B 5w zener 1N5339B STMICROELECTRONICS
Text: 1N5335B / 1N5388B 5W ZENER DIODES FEATURES VOLTAGE RANGE : 3.9 V to 200 V HERMETICALLY SEALED PLASTIC CASE HIGH SURGE CAPABILITY : 180 W 8.3 ms . DESCRIPTION CB417 5 W Zener diodes. ABSOLUTE RATINGS (Tamb = 25°C) Symbol P Tstg Tj TL Parameter Power dissipation on infinite heatsink
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1N5335B
1N5388B
CB417
5W zener sgs-thomson
CB417
marking 683 zener diode
1n5359b
1N5388B
zener 35b
1N5342B
5w zener
1N5339B STMICROELECTRONICS
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CB417
Abstract: P6KE10A P6KE12A P6KE15A P6KE18A P6KE22A P6KE24A P6KE27A P6KE30A
Text: P6KE6V8A/440A P6KE6V8CA/440CA TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 440 V. UNI AND BIDIRECTIONAL TYPES. LOW CLAMPING FACTOR. FAST RESPONSE TIME. UL RECOGNIZED. DESCRIPTION CB417 Transil diodes provide high overvoltage protection
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P6KE6V8A/440A
P6KE6V8CA/440CA
CB417
CB417
P6KE10A
P6KE12A
P6KE15A
P6KE18A
P6KE22A
P6KE24A
P6KE27A
P6KE30A
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transil 6.8v
Abstract: CB417 diode p6ke39ca p6ke220ca 6.8V bidirectional transil p6ke68a P6KE27A P6KE30A P6KE10A P6KE12A
Text: P6KE6V8A/440A P6KE6V8CA/440CA TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 440 V. UNI AND BIDIRECTIONAL TYPES. LOW CLAMPING FACTOR. FAST RESPONSE TIME. UL RECOGNIZED. DESCRIPTION CB417 Transil diodes provide high overvoltage protection
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P6KE6V8A/440A
P6KE6V8CA/440CA
CB417
transil 6.8v
CB417
diode p6ke39ca
p6ke220ca
6.8V bidirectional transil
p6ke68a
P6KE27A
P6KE30A
P6KE10A
P6KE12A
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p6ke68a
Abstract: CB417 P6KE10A P6KE12A P6KE15A P6KE18A P6KE22A P6KE24A P6KE27A P6KE30A
Text: P6KE6V8A/440A P6KE6V8CA/440CA TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 440 V. UNI AND BIDIRECTIONAL TYPES. LOW CLAMPING FACTOR. FAST RESPONSE TIME. UL RECOGNIZED. DESCRIPTION CB417 Transil diodes provide high overvoltage protection
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P6KE6V8A/440A
P6KE6V8CA/440CA
CB417
p6ke68a
CB417
P6KE10A
P6KE12A
P6KE15A
P6KE18A
P6KE22A
P6KE24A
P6KE27A
P6KE30A
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220v AC voltage stabilizer schematic diagram
Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.
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Batte48
220v AC voltage stabilizer schematic diagram
1000w inverter PURE SINE WAVE schematic diagram
philips ecg master replacement guide
ecg semiconductors master replacement guide
diac 3202
bta16 6008
csr1000
mini Audio transformer 200k to 1k ct input
jrc 2904 d
BTA12 6008
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PGA68
Abstract: clcc44 SO53 material declaration semiconductor package FDIP28 schottky diode sb 5400 CLCC68 CLCC52 smd transistor marking 7622 DIP40 weight
Text: CHEMICAL CONTENT OF SEMICONDUCTOR PACKAGING SEPTEMBER 1998 Corp. Environment Strategies Corp. Package Development USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
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GS-150T
102x51x19
GS-100T
GS-R1005
PGA68
clcc44
SO53
material declaration semiconductor package
FDIP28
schottky diode sb 5400
CLCC68
CLCC52
smd transistor marking 7622
DIP40 weight
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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CB417
Abstract: smd diode Coloured band marked devices Smd code S08 CB429 DIL20 F126 S020 T0220AB SOD-6 DIMENSIONS CB417
Text: LVT3V3 SMLVT3V3 / = T SG S-THO M SO N * * œ ^ M 0 M ( § s TRANSIL FEATURES • ■ ■ ■ ■ UNDIRECTIONAL TRANSIL DIODE. PEAK PULSE POWER= 600 W @ 1ms. REVERSE STAND OFF VOLTAGE = 3.3 V. LOW CLAMPING FACTOR. FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR -
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CB472.
CB473.
DIL20
T0220AB
00faM52
CB417
smd diode Coloured band marked devices
Smd code S08
CB429
F126
S020
SOD-6
DIMENSIONS CB417
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Untitled
Abstract: No abstract text available
Text: fZ T SGS-THOM SON LCTA6V1M 3 MONOLITHIC TRANSIL ARRAY PRELIMINARY DATA FEATURES • HIGH SURGE CAPABILITY TRANSIL ARRAY lpp = 15 A 8/20J1S ■ UP TO 18 UNIDIRECTIONAL TRANSIL FONCTIONS ■ BREAKDOWN VOLTAGE = 6V1 ■ VERY LOW CAPACITANCE ; C = 8pF at Vr = 5 V
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8/20J1S
5ns/50ns
2/50HS
8/20HS
150pF
CB472.
CB473.
DIL20
T0220AB
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ITA6V1M3
Abstract: No abstract text available
Text: / = 7 SGS-THOMSON ITA6V1M3 MONOLITHIC TRANSIL ARRAY FOR DATA LINE PROTECTION FEATURES • HIGH SURGE CAPABILITY TRANSIL ARRAY Ipp = 40A 8/20| as ■ UP TO 18 UNIDIRECTIONAL TRANSIL FUNCTIONS ■ BREAKDOWN VOLTAGE = 6V1 ■ LOW CLAMPING FACTOR VClA/br AT
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5ns/50ns
2/50ns
8/20ns
DIL20
T0220AB
7TBT237
ITA6V1M3
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AF126
Abstract: 0B2 tube
Text: SGS-THOM SON * 7 M g ^ [E y i(M R l© S P 7 T - 1 0 , B / 1 1 0 , B TRANSIL FEATURES • PEAK PULSE POWER= 700 W @ 1ms. ■ STAND-OFF VOLTAGE RANGE : From 10 V to 110 V. ■ UNI AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME:
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CB472.
CB473.
DIL20
T0220AB
7TBT237
AF126
0B2 tube
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Untitled
Abstract: No abstract text available
Text: SG S-THO M SO N ITA6V1U3 MONOLITHIC TRANSIL ARRAY FOR DATA LINE PROTECTION FEATURES • ■ . . ■ HIGH SURGE CAPABILITY TRANSIL ARRAY Ipp = 40 A 8/20 is UP TO 8 UNIDIRECTIONAL TRANSIL FUNCTIONS BREAKDOWN VOLTAGE=6V1 LOW LEAKAGE CURRENT LOW CLAMPING FACTOR (VCl / VBr AT
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DIL20
T0220AB
7TBT237
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SMD 1N60
Abstract: SMD 1N60 diode 6072a 1N56 1N60 diode SMD 6072A TUBE 1N6072 diode 1n60 sod6 package 1N60 MOS
Text: rz j S G S -T H O M S O N ^ 7£ 1N 5634A /1N 5665A 1N 6040A /1N 6072A TRANSIL FEATURES • PEAK PULSE POWER= 1500 W @ 1ms. ■ BREAKDOWN VOLTAGE RANGE : From 11V to 200 V. ■ UNI AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps 0 V to VBR .
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CB472.
CB473.
DIL20
T0220AB
7TBT237
SMD 1N60
SMD 1N60 diode
6072a
1N56
1N60 diode SMD
6072A TUBE
1N6072
diode 1n60
sod6 package
1N60 MOS
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N5349B
Abstract: N5383 N536 5w zener n5352b N5342B 1n5388b
Text: T SGS-THOMSON ^7# 1N5335B / 1 N5388B 5W ZENER DIODES FEATURES • VOLTAGE RANGE : 3.9 V to 200 V ■ HERMETICALLY SEALED PLASTICCASE ■ HIGH SURGE CAPABILITY: 180 W 8.3 m s . DESCRIPTION 5 W Zener diodes. ABSOLUTE RATINGS (Tamb = 25°C) Svmbol P T stg Tj
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1N5335B
N5388B
1N5388B
N5349B
N5383
N536
5w zener
n5352b
N5342B
1n5388b
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON P6KE6V8A/440A [RiDO [^@[E[L[10Tr[HÌ Q D^OOOS P6KE6V8CA/440CA TRANS IL FEATURES • PEAK PULSE POWER : 600 W (10/1 OOQis) ■ BREAKDOWN VOLTAGE RANGE : From 6.8V to 440 V. ■ UNI AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR. ■ FAST RESPONSETIME.
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P6KE6V8CA/440CA
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