R500 resistor
Abstract: Philips3C85 IRS2530D IRS2530 VOGT 503 vogt inductor HM00-07544 ECKD3 CFL lamp cvs22
Text: IRPLDIM5E 4 Level Switch Dim Fluorescent Ballast using the IRS2530D DIM8TM Table of Contents Page 1. Features .2 2. Overview .2
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IRS2530D
HM00-07544
E20/10/
Philips3C85
RD0802
R500 resistor
Philips3C85
IRS2530
VOGT 503
vogt inductor
HM00-07544
ECKD3
CFL lamp
cvs22
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50 watts CFL inverter circuit diagram
Abstract: circuit diagram of luminous inverter 332K 1kv ceramic capacitor 5 watts CFL inverter circuit diagram of micro inverter for cfl lamps TLC3931 panasonic inverter manual cfl 32w philips ballast schematic diagram of cfl 5w lamps tektronix P6009
Text: December 1998 Application Note 42039 Designing an Architectural Dimming CFL Ballast Using the ML4835 INTRODUCTION Designed to operate CFLs at full intensity and dim to architectural levels, this ballast displays all the features of the ML4835 ballast controller IC such as:
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ML4835
ML4835
ML4835EVAL
138VRMS,
50 watts CFL inverter circuit diagram
circuit diagram of luminous inverter
332K 1kv ceramic capacitor
5 watts CFL inverter circuit diagram
of micro inverter for cfl lamps
TLC3931
panasonic inverter manual
cfl 32w philips ballast
schematic diagram of cfl 5w lamps
tektronix P6009
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Untitled
Abstract: No abstract text available
Text: LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Gold Metalization • Emitter Ballasting Dim: A B C D E MAXIMUM RATINGS
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LTE21009R
LTE21009R
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TPV5051
Abstract: No abstract text available
Text: TPV5051 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV5051 is Designed for AB Push Pull, Common Emitter from 470 to 860 MHz Applications. PACKAGE STYLE BMA-2 FEATURES: • Gold Metalization DIM A B C D E G H J K N Q U • Diffused Ballast Resistor MAXIMUM RATINGS
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TPV5051
TPV5051
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PDF
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1-10V
Abstract: 9137 001
Text: 23/10/2006 LED Driver DIM 25W/1.05A-24V 230V Product family description Designed specifically to optimally power LuxeonTM high-power LEDs Also perfectly operate the Philips LEDbased systems, including LED Module System and LED String Dimming with LED driver 25W 1-10V does
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5A-24V
1-10V
9137 001
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DIODE SS34
Abstract: PDS1040 PDS1040CTL ss34 smc diode PDS540 MBRD835L smc rectifier SS34 gs 805 DPAK PDS1040L
Text: New Product Announcement February 4, 2005 Announcing a Complete Line of Industry-Leading High-Efficiency Schottky Barrier Rectifiers in Our New PowerDITM5 Compact Power Package A D Dim Min Max A 1.05 1.15 A2 0.33 0.43 b1 0.80 0.99 b2 1.70 1.88 D 3.90 4.05
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PDS1040
PDS1040CTL:
DIODE SS34
PDS1040CTL
ss34 smc diode
PDS540
MBRD835L
smc rectifier
SS34 gs
805 DPAK
PDS1040L
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PDF
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Untitled
Abstract: No abstract text available
Text: CX Dimming Option Card TITLE COMPLIANT CALIFORNIA CX Lighting Control Panels PROJECT INFORMATION 0-10V 24 DIM Project Name Catalog No. Date DIMMING The CX Dimming Option Card provides 0-10V dimming through any HBA CX Lighting Control Panel. This provides a low cost solution for lighting
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CX04/CX08
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automatic room light control
Abstract: quicktronic hf 2x58 quicktronic quicktronic dimmable dim multi 2 AUTOMATIC ROOM LIGHT 2x58 electronic ballast for uv tube light 1X58
Text: Multi sensor HF DIM MULTI 1.10V-Sensor for constant light control with automatic switch-off and presence detection Product features • 1.10V sensor for constant light control with automatic switch-off delay time: 3 min • With integrated presence detection (on/off; delay time between 5 and 30 min)
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Untitled
Abstract: No abstract text available
Text: September 1998 PRELIMINARY ^Ék Micro Linear ML4835 Compact Fluorescent Electronic Dimming Ballast Controller GENERAL DESCRIPTION FEATURES The M L4835 is a com plete solution for a dim m able or a non-dim m able, high pow er factor, high efficiency electronic ballast especially tailored for a com pact
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ML4835
L4835
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Untitled
Abstract: No abstract text available
Text: D ecem b e r 1998 PRELÜM MARY ^Ék Micro Linear ML4835 Compact Fluorescent Electronic Dimming Ballast Controller GEN ERAL DESCRIPTION FEATURES The M L4835 is a com p ie te solution 6 r a dim m ab le o r a non-dim m a b le , high pow e r iactoij high efficiency
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ML4835
L4835
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8kw pfc
Abstract: No abstract text available
Text: Febru ary 1 9 9 9 PREKM M A RY MÉL M icro Linear ML4832 Electronic Dim m ing Ballast Controller GENERAL DESCRIPTION FEATURES The M L 4 8 3 2 is a com p Je te solution 6 r a d in m a b ie ,h o n dim m a b Je , high pow e r ia c t o r ; high e ffic ie n c y e le c tro n ic
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ML4832
8kw pfc
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562C
Abstract: XF 250 y5s 0022 5GAS20 5GAP10 562c Z5U HY825 TSD33 HMMP10 Z5U 1KV
Text: Types 561C, 562C, 563C Vishay C eram ic Disc C apacitors Cera-Mite , Low Voltage, G eneral Purpose FEATURES • Designed for telephones and lighting ballasts to withstand transient voltage and energy surges in accord with FCC and IEEE standards DIM ENSIO NAL CONFIGURATIONS - LOW VOLTAGE 12 V TO 1KV in inches [millimeters]
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RS-468
02-Jan-02
562C
XF 250
y5s 0022
5GAS20
5GAP10
562c Z5U
HY825
TSD33
HMMP10
Z5U 1KV
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RT 9299
Abstract: No abstract text available
Text: April 1997 P R E L IM IN A R Y % M i c r o Linear ML4832 Electronic Dim m ing Ballast Controller GENERAL DESCRIPTION Complete power factor correction and dimming ballast control in one IC The M L4832 is a complete solution for a dimmable/nondimm able, high power factor, high efficiency electronic
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ML4832
L4832
RT 9299
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1946A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1946A is a silicon NPN epitaxial planar type transistor de Dim ensions in m m signed for RF power amplifiers on V H F band mobile radio applications. FEATURES
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2SC1946A
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POWER TRANSISTOR 2sC3102
Abstract: 2SC3102 RF NPN POWER TRANSISTOR 60w
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi OUTLINE DRAWING cally designed fo r high power amplifiers applications in UHF band. Dim ensions in mm R1 FEATURES
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2SC3102
2SC3102
520MHz,
520MHz.
520MHz)
POWER TRANSISTOR 2sC3102
RF NPN POWER TRANSISTOR 60w
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR □GITb'ìS =H2 2SC3630 NPN EPITAXIAL PLANAR T YPE DESCRIPTION 2SC3630 is a silicon NPN epitaxial planar type transistor specifi cally designed fo r U HF power am plifiers applications. OUTLINE DRAWING Dim ensions in mm FEATURES
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2SC3630
2SC3630
520MHz,
150pF,
1500pF,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dim ensions in m m FEATURES •
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2SC3628
2SC3628
175MHz
175MHz.
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Z60N
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR bSMTflST QÜ17703 ÔTT 2SC4240 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 4240 is a silicon NPN epitaxial planar type transistor specifi cally designed for VHF power amplifier applications. OUTLINE DRAWING Dim ensions in mm
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2SC4240
peg13dB.
220pF,
1000pF,
4700p
Z60N
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3379 NPN EPITAXIAL PLANAR TY P E DESCRIPTION OUTLINE DRAWING Dim ensions in mm 2SC3379 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF power amplifier applications. FEATURES • High power gain: G p eè6.7dB
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2SC3379
2SC3379
520MHz,
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2SC3105
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC310S NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3105 is a silicon NPN epitaxial planar type transistor specifically designed for power amplifiers in the 800 — Dim ensions in mm R 0 .6 900M H z band range.
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2SC310S
2SC3105
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L6574D
Abstract: Ballast driver L6574 L6574
Text: 7 7 S G S -T H O M S O N k7 # . RiflD K EILi©ìrMISDD©l L6574 CFL/TL BALLAST DRIVER PREHEAT AND DIM M ING PRO DU CT PREVIEW • HIGH VOLTAGE RAIL UP TO 600V ■ dV/dt IMMUNITY ± 50 V/ns IN FULL TEM PERATURE RANGE ■ DRIVER CURRENT CAPABILITY: 2 50mMA SOURCE
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L6574
S016N
DIP16
L6574D
250mMA
450mA
80/40ns
L6574
making40
Ballast driver L6574
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Ballast driver L6574
Abstract: L6574 L6574D L6574 application S016N
Text: 7 7 SGS-THOMSON k7 # . RiflD K EILi©ìrMISDD©l L6574 CFL/TL BALLAST DRIVER PREHEAT AND DIM M ING P R O D U C T P R E V IE W • HIGH VOLTAGE RAIL UP TO 600V ■ dV/dt IMMUNITY ± 50 V/ns IN FULL TEM PERATURE RANGE ■ DRIVER CURRENT CAPABILITY: 2 50mMA SOURCE
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L6574
S016N
DIP16
L6574D
250mMA
450mA
80/40ns
L6574
Ballast driver L6574
L6574 application
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cb 10 b 60 kd
Abstract: 2SC4167 T-47
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4167 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2 S C 4167 is a silicon NPN epitaxial planar typ e transistor spe cifi OUTLINE DRAWING Dim ensions in mm cally designed fo r UHF pow er am plifiers applications. FEATURES •
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2SC4167
2SC4167
220pF,
cb 10 b 60 kd
T-47
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2237 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2237 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dim ensions in mm FEATURES
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2SC2237
2SC2237
175MHz.
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