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    DIM BALLAST Search Results

    DIM BALLAST Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    ISL97634IRT26Z-T Renesas Electronics Corporation White LED Driver with PWM Dimming Visit Renesas Electronics Corporation
    ISL97634IRT14Z-T Renesas Electronics Corporation White LED Driver with PWM Dimming Visit Renesas Electronics Corporation

    DIM BALLAST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    R500 resistor

    Abstract: Philips3C85 IRS2530D IRS2530 VOGT 503 vogt inductor HM00-07544 ECKD3 CFL lamp cvs22
    Text: IRPLDIM5E 4 Level Switch Dim Fluorescent Ballast using the IRS2530D DIM8TM Table of Contents Page 1. Features .2 2. Overview .2


    Original     		PDF IRS2530D HM00-07544 E20/10/ Philips3C85 RD0802 R500 resistor Philips3C85 IRS2530 VOGT 503 vogt inductor HM00-07544 ECKD3 CFL lamp cvs22

    50 watts CFL inverter circuit diagram

    Abstract: circuit diagram of luminous inverter 332K 1kv ceramic capacitor 5 watts CFL inverter circuit diagram of micro inverter for cfl lamps TLC3931 panasonic inverter manual cfl 32w philips ballast schematic diagram of cfl 5w lamps tektronix P6009
    Text: December 1998 Application Note 42039 Designing an Architectural Dimming CFL Ballast Using the ML4835 INTRODUCTION Designed to operate CFLs at full intensity and dim to architectural levels, this ballast displays all the features of the ML4835 ballast controller IC such as:


    Original     		PDF ML4835 ML4835 ML4835EVAL 138VRMS, 50 watts CFL inverter circuit diagram circuit diagram of luminous inverter 332K 1kv ceramic capacitor 5 watts CFL inverter circuit diagram of micro inverter for cfl lamps TLC3931 panasonic inverter manual cfl 32w philips ballast schematic diagram of cfl 5w lamps tektronix P6009

    Untitled

    Abstract: No abstract text available
    Text: LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Gold Metalization • Emitter Ballasting Dim: A B C D E MAXIMUM RATINGS


    Original     		PDF LTE21009R LTE21009R

    TPV5051

    Abstract: No abstract text available
    Text: TPV5051 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV5051 is Designed for AB Push Pull, Common Emitter from 470 to 860 MHz Applications. PACKAGE STYLE BMA-2 FEATURES: • Gold Metalization DIM A B C D E G H J K N Q U • Diffused Ballast Resistor MAXIMUM RATINGS


    Original     		PDF TPV5051 TPV5051

    1-10V

    Abstract: 9137 001
    Text: 23/10/2006 LED Driver DIM 25W/1.05A-24V 230V Product family description Designed specifically to optimally power LuxeonTM high-power LEDs Also perfectly operate the Philips LEDbased systems, including LED Module System and LED String Dimming with LED driver 25W 1-10V does


    Original     		PDF 5A-24V 1-10V 9137 001

    DIODE SS34

    Abstract: PDS1040 PDS1040CTL ss34 smc diode PDS540 MBRD835L smc rectifier SS34 gs 805 DPAK PDS1040L
    Text: New Product Announcement February 4, 2005 Announcing a Complete Line of Industry-Leading High-Efficiency Schottky Barrier Rectifiers in Our New PowerDITM5 Compact Power Package A D Dim Min Max A 1.05 1.15 A2 0.33 0.43 b1 0.80 0.99 b2 1.70 1.88 D 3.90 4.05


    Original     		PDF PDS1040 PDS1040CTL: DIODE SS34 PDS1040CTL ss34 smc diode PDS540 MBRD835L smc rectifier SS34 gs 805 DPAK PDS1040L

    Untitled

    Abstract: No abstract text available
    Text: CX Dimming Option Card TITLE COMPLIANT CALIFORNIA CX Lighting Control Panels PROJECT INFORMATION 0-10V 24 DIM Project Name Catalog No. Date DIMMING The CX Dimming Option Card provides 0-10V dimming through any HBA CX Lighting Control Panel. This provides a low cost solution for lighting


    Original     		PDF CX04/CX08

    automatic room light control

    Abstract: quicktronic hf 2x58 quicktronic quicktronic dimmable dim multi 2 AUTOMATIC ROOM LIGHT 2x58 electronic ballast for uv tube light 1X58
    Text: Multi sensor HF DIM MULTI 1.10V-Sensor for constant light control with automatic switch-off and presence detection Product features • 1.10V sensor for constant light control with automatic switch-off delay time: 3 min • With integrated presence detection (on/off; delay time between 5 and 30 min)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: September 1998 PRELIMINARY ^Ék Micro Linear ML4835 Compact Fluorescent Electronic Dimming Ballast Controller GENERAL DESCRIPTION FEATURES The M L4835 is a com plete solution for a dim m able or a non-dim m able, high pow er factor, high efficiency electronic ballast especially tailored for a com pact


    OCR Scan     		PDF ML4835 L4835

    Untitled

    Abstract: No abstract text available
    Text: D ecem b e r 1998 PRELÜM MARY ^Ék Micro Linear ML4835 Compact Fluorescent Electronic Dimming Ballast Controller GEN ERAL DESCRIPTION FEATURES The M L4835 is a com p ie te solution 6 r a dim m ab le o r a non-dim m a b le , high pow e r iactoij high efficiency


    OCR Scan     		PDF ML4835 L4835

    8kw pfc

    Abstract: No abstract text available
    Text: Febru ary 1 9 9 9 PREKM M A RY MÉL M icro Linear ML4832 Electronic Dim m ing Ballast Controller GENERAL DESCRIPTION FEATURES The M L 4 8 3 2 is a com p Je te solution 6 r a d in m a b ie ,h o n dim m a b Je , high pow e r ia c t o r ; high e ffic ie n c y e le c tro n ic


    OCR Scan     		PDF ML4832 8kw pfc

    562C

    Abstract: XF 250 y5s 0022 5GAS20 5GAP10 562c Z5U HY825 TSD33 HMMP10 Z5U 1KV
    Text: Types 561C, 562C, 563C Vishay C eram ic Disc C apacitors Cera-Mite , Low Voltage, G eneral Purpose FEATURES • Designed for telephones and lighting ballasts to withstand transient voltage and energy surges in accord with FCC and IEEE standards DIM ENSIO NAL CONFIGURATIONS - LOW VOLTAGE 12 V TO 1KV in inches [millimeters]


    OCR Scan     		PDF RS-468 02-Jan-02 562C XF 250 y5s 0022 5GAS20 5GAP10 562c Z5U HY825 TSD33 HMMP10 Z5U 1KV

    RT 9299

    Abstract: No abstract text available
    Text: April 1997 P R E L IM IN A R Y % M i c r o Linear ML4832 Electronic Dim m ing Ballast Controller GENERAL DESCRIPTION Complete power factor correction and dimming ballast control in one IC The M L4832 is a complete solution for a dimmable/nondimm able, high power factor, high efficiency electronic


    OCR Scan     		PDF ML4832 L4832 RT 9299

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1946A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1946A is a silicon NPN epitaxial planar type transistor de­ Dim ensions in m m signed for RF power amplifiers on V H F band mobile radio applications. FEATURES


    OCR Scan     		PDF 2SC1946A

    POWER TRANSISTOR 2sC3102

    Abstract: 2SC3102 RF NPN POWER TRANSISTOR 60w
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed fo r high power amplifiers applications in UHF band. Dim ensions in mm R1 FEATURES


    OCR Scan     		PDF 2SC3102 2SC3102 520MHz, 520MHz. 520MHz) POWER TRANSISTOR 2sC3102 RF NPN POWER TRANSISTOR 60w

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR □GITb'ìS =H2 2SC3630 NPN EPITAXIAL PLANAR T YPE DESCRIPTION 2SC3630 is a silicon NPN epitaxial planar type transistor specifi­ cally designed fo r U HF power am plifiers applications. OUTLINE DRAWING Dim ensions in mm FEATURES


    OCR Scan     		PDF 2SC3630 2SC3630 520MHz, 150pF, 1500pF,

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3628 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC3628 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dim ensions in m m FEATURES •


    OCR Scan     		PDF 2SC3628 2SC3628 175MHz 175MHz.

    Z60N

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR bSMTflST QÜ17703 ÔTT 2SC4240 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 4240 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for VHF power amplifier applications. OUTLINE DRAWING Dim ensions in mm


    OCR Scan     		PDF 2SC4240 peg13dB. 220pF, 1000pF, 4700p Z60N

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3379 NPN EPITAXIAL PLANAR TY P E DESCRIPTION OUTLINE DRAWING Dim ensions in mm 2SC3379 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF power amplifier applications. FEATURES • High power gain: G p eè6.7dB


    OCR Scan     		PDF 2SC3379 2SC3379 520MHz,

    2SC3105

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC310S NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3105 is a silicon NPN epitaxial planar type transistor specifically designed for power amplifiers in the 800 — Dim ensions in mm R 0 .6 900M H z band range.


    OCR Scan     		PDF 2SC310S 2SC3105

    L6574D

    Abstract: Ballast driver L6574 L6574
    Text: 7 7 S G S -T H O M S O N k7 # . RiflD K EILi©ìrMISDD©l L6574 CFL/TL BALLAST DRIVER PREHEAT AND DIM M ING PRO DU CT PREVIEW • HIGH VOLTAGE RAIL UP TO 600V ■ dV/dt IMMUNITY ± 50 V/ns IN FULL TEM­ PERATURE RANGE ■ DRIVER CURRENT CAPABILITY: 2 50mMA SOURCE


    OCR Scan     		PDF L6574 S016N DIP16 L6574D 250mMA 450mA 80/40ns L6574 making40 Ballast driver L6574

    Ballast driver L6574

    Abstract: L6574 L6574D L6574 application S016N
    Text: 7 7 SGS-THOMSON k7 # . RiflD K EILi©ìrMISDD©l L6574 CFL/TL BALLAST DRIVER PREHEAT AND DIM M ING P R O D U C T P R E V IE W • HIGH VOLTAGE RAIL UP TO 600V ■ dV/dt IMMUNITY ± 50 V/ns IN FULL TEM­ PERATURE RANGE ■ DRIVER CURRENT CAPABILITY: 2 50mMA SOURCE


    OCR Scan     		PDF L6574 S016N DIP16 L6574D 250mMA 450mA 80/40ns L6574 Ballast driver L6574 L6574 application

    cb 10 b 60 kd

    Abstract: 2SC4167 T-47
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4167 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2 S C 4167 is a silicon NPN epitaxial planar typ e transistor spe cifi­ OUTLINE DRAWING Dim ensions in mm cally designed fo r UHF pow er am plifiers applications. FEATURES •


    OCR Scan     		PDF 2SC4167 2SC4167 220pF, cb 10 b 60 kd T-47

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2237 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2237 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Dim ensions in mm FEATURES


    OCR Scan     		PDF 2SC2237 2SC2237 175MHz.