FRS10CS10
Abstract: frs1 6V DIL SPST MINI RELAY FRS10MC-S-DC12V frs8c-s10 frs1h-s frs3mc FRT5-L1 frt5 dc 12v frs1kh-s FRS12MC-1S
Text: FRT2 RELAY Subminiature Light Duty RELAY FEATURES Low profile and light weight High reliability Dual-in line configuration as IC Use on telecommunications, remote control etc. C For use with Dil-socket Sealed type c Recognized File No.: E141516 SPECIFICATIONS
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E141516
10-55Hz
FRS17
DC12V
125VAC
125VAC
250VAC
FRS17C-S10-DC12V
10Amp,
FRS10CS10
frs1 6V DIL SPST MINI RELAY
FRS10MC-S-DC12V
frs8c-s10
frs1h-s
frs3mc
FRT5-L1
frt5 dc 12v
frs1kh-s
FRS12MC-1S
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AN17880A
Abstract: SSONF-16D EPOXY 810
Text: Prepared Ref No. Product Specifications Checked AN17880A Approved A-1 Total Page 7 Page No. 1 Structure Silicon Monolithic Bipolar IC Appearance SSONF-16D DIL-16Pin Plastic Package SO type Application Low Frequency Amplifier Function Headphone amplifier IC with Center Amplifier
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AN17880A
SSONF-16D
DIL-16Pin
013x10
61x10
FMSC-PSDA-002-01
SSONF-16D
AN17880A
EPOXY 810
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Untitled
Abstract: No abstract text available
Text: ISOCOM COMPONENTS ISPB35 DESCRIPTION The ISPB35 is a 1-Form B solid state relay in a space saving 4 pin DIL package. The ISPB35 utilises MOSFET technology that is optically coupled to a highly efficient GaAlAs infrared light emitting diode. B35 FEATURES •
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ISPB35
ISPB35
75kVRMS
100mA
DC93083
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FRS5
Abstract: E141516 spst DIL relay
Text: FRS5 RELAY High Sensitivity Flat Type Power Relay FEATURES Subminiature light weight relay High sensitivity Switching capacity up to 16 Amp PCB mounting, dil pitch terminal Dust cover or sealed type C Recognized File No. : E141516 * Note : All approvals for 16A only
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E141516
10-55Hz,
DC12V
10AMP
16AMP
16Amp
10AMP.
FRS5
E141516
spst DIL relay
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171217-1
Abstract: No abstract text available
Text: ISOCOM COMPONENTS ISPA20 DESCRIPTION The ISPA20 is a 1-Form A solid state relay in a space saving 4 pin DIL package. The ISPA20 utilises MOSFET technology that is optically coupled to a highly efficient GaAlAs infrared light emitting diode. A20 FEATURES •
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ISPA20
ISPA20
200mA
75kVRMS
DC93078
171217-1
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Untitled
Abstract: No abstract text available
Text: ISOCOM COMPONENTS ISPB40 DESCRIPTION The ISPB40 is a 1-Form B solid state relay in a space saving 4 pin DIL package. The ISPB40 utilises MOSFET technology that is optically coupled to a highly efficient GaAlAs infrared light emitting diode. B40 FEATURES •
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ISPB40
ISPB40
75kVRMS
100mA
DC93084
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b20 diode
Abstract: 200v 100mA mosfet
Text: ISOCOM COMPONENTS ISPB20 DESCRIPTION The ISPB20 is a 1-Form B solid state relay in a space saving 4 pin DIL package. The ISPB20 utilises MOSFET technology that is optically coupled to a highly efficient GaAlAs infrared light emitting diode. B20 FEATURES •
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ISPB20
ISPB20
75kVRMS
100mA
DC93081
b20 diode
200v 100mA mosfet
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MOELLER Z00 10
Abstract: DF5-322-1K5 PKZM0-XDM12 DF5-322-2K2 DIL00AM DF5-322-075 DF5-340-7K5 DS4-340-15K-MX dil2m DIL00M
Text: www.moeller.co.uk Industrial Switchgear Short Form Catalogue 2005/2006 Think future. Switch to green. Moeller – Market leaders in industrial switchgear Moeller has been at the forefront of switching, protecting and controlling motors for over 100 years. Setting standards with DIL contactors and PKZ
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D-53115
SK0211-1149GB
MOELLER Z00 10
DF5-322-1K5
PKZM0-XDM12
DF5-322-2K2
DIL00AM
DF5-322-075
DF5-340-7K5
DS4-340-15K-MX
dil2m
DIL00M
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diode a60
Abstract: ISPA60
Text: ISOCOM COMPONENTS ISPA60 DESCRIPTION The ISPA60 is a 1-Form A solid state relay in a space saving 4 pin DIL package. The ISPA60 utilises MOSFET technology that is optically coupled to a highly efficient GaAlAs infrared light emitting diode. A60 FEATURES •
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ISPA60
ISPA60
75kVRMS
DC93080
diode a60
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mmc 4011 E
Abstract: kdt 633 10Q18 photometer BV1010
Text: ‘*,. ?dIL-s-195m/467 25 January 1672 MIUTARY SEIKICONDUCTQR sPECIFICATIDN DEVICE, DIODE, TYPES JAN1N57S5 TW speculation ~Immt8 and 1. AND JANTXlN3703 LS mandatory &s 1.2 P@lcal 1.S ?daxfmum ent specifbxtton dbmfs!simns. covers by all &par tof Defense. See figure
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JAN1N57S5
JANTXlN3703
dIL-s-195m/467
EcOM14ENC3AT
mmc 4011 E
kdt 633
10Q18
photometer
BV1010
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DIODE a40
Abstract: No abstract text available
Text: ISOCOM COMPONENTS ISPA40 DESCRIPTION The ISPA40 is a 1-Form A solid state relay in a space saving 4 pin DIL package. The ISPA40 utilises MOSFET technology that is optically coupled to a highly efficient GaAlAs infrared light emitting diode. A40 FEATURES •
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ISPA40
ISPA40
75kVRMS
130mA
DC93079
DIODE a40
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ISPA06
Abstract: mosfet a06 relay 5v 100 ohm A06 mosfet
Text: ISOCOM COMPONENTS ISPA06 DESCRIPTION The ISPA06 is a 1-Form A solid state relay in a space saving 4 pin DIL package. The ISPA06 utilises MOSFET technology that is optically coupled to a highly efficient GaAlAs infrared light emitting diode. A06 FEATURES •
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ISPA06
ISPA06
400mA)
75kVRMS
400mA
DC93077
mosfet a06
relay 5v 100 ohm
A06 mosfet
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Untitled
Abstract: No abstract text available
Text: HAMAMATSU PHOTONICS K.K. SOLID STATE DIVISION 1126-1 ICHINO-CHO,HAMAMATSU CITY 435-8558,JAPAN TELEPHONE:053-434-3311 FAX:053-434-5184 PRELIMINARY OCD-B90826 Jun. 2002 Hamamatsu MINI-DIL type,1.3 type,1.3 / 1.55um InGaAs PIN-PD with Pre-Amplifier Module Type No. G9128
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OCD-B90826
G9128
G9129
G9130
G9131
G9131
156Mbps,
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diode "jyw"
Abstract: JYW diode JY diode RELAYS FUJITSU 250VA E56140 relay 3a 30VDC
Text: FTR-K1 SERIES POWER RELAY 1 POLE - 3, 5A Medium Load Control JY Series n FEATURES UL, CSA, VDE recognized High sensitivity and low power consumption l High insulation l Wide operating range l DIL pitch terminals l Plastic sealed type, RTIII l Socket mounting type and socket available
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48VDC
diode "jyw"
JYW diode
JY diode
RELAYS FUJITSU
250VA
E56140
relay 3a 30VDC
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MD2148
Abstract: M2148 MD2148-3 MF2148 F2148-3
Text: M2148 DOfinÜ^DIL 4096 Bit 1024 X 4 HMOS Static RAM FEATURES • High speed-70ns maximum access time ( - 3 ) • Automatic low-power standby-165mW maximum • Completely static-no clock required • Single +5V supply • TTL compatible inputs and outputs
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speed-70ns
standby-165mW
2114M
M2148
Range-55Â
M2148
4096-bit
MD2148
MD2148-3
MF2148
F2148-3
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Untitled
Abstract: No abstract text available
Text: MS8128SC-10/12/15 Issue 3.0 : June 1909 128K MS8128SC X 8 CMOS SRAM Module ADVANCE PRODUCT INFORMATION 131,072 x 8 CMOS High Speed Static RAM Features Pin Definition Access Times of 100/120/150 ns JEDEC Standard 32 pin DIL Footprint Operating Power 47.5mW typ.
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MS8128SC-10/12/15
MS8128SC
800jxW
MIL-STD-883C
MS8128SCLMB-10
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Q711
Abstract: Q71-1-1 am2503pc m3042 Q7111 2504 SAR
Text: AM 2502/3/4 AM 25L02/3/4 DIMBÜ^DIL Successive Approxim ation Registers FEATURES • Contains all the storage and control for successive approximation A to D converters. • Provision for register extension or truncation. • Can be operated in START-STOP or continuous
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AM2502/3/4
AM25L02/3/4
MIL-STD-883.
12-bit
Q711
Q71-1-1
am2503pc
m3042
Q7111
2504 SAR
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27512 eprom
Abstract: RC 4565
Text: 64K x 8 SRAM Module moìaic MS864FKE-10/12/15 Issue 1.6: April 1992 ADVANCE PRODUCT INFORMATION Semiconductor 65,536 x 8 CMOS High Speed Static RAM Features Pin Definition Fast Access Times of 100,120,150 ns Standard 28 pin DIL footprint Low Power Standby 10 mW typ.
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MS864FKE-10/12/15
A0-A14
27512 eprom
RC 4565
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TBP28S166
Abstract: "Functional replacement" vw-24 63S1681 82HM191 82HM191CJG 82HM191CPG AM27S191 2HM19-1 82S191
Text: DMH^DIL 82HM191 16,384 Bit 2048 x 8 HMOS ROM FEATURES • • • • • • • • • GENERAL DESCRIPTION High speed •80ns maximum access time Completely static - no clock required Single + 5V supply Fully TTL compatible Three chip select inputs Three-state outputs
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82HM191
2HM191
82HM191C
82HM191M
82HM191C:
82HM191M:
A0-A10
TBP28S166
"Functional replacement"
vw-24
63S1681
82HM191CJG
82HM191CPG
AM27S191
2HM19-1
82S191
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Untitled
Abstract: No abstract text available
Text: MS8512FKX-86/10/12/15 MS8512FKX 524,288 x 8 CMOS High Speed Static RAM Features Access Times of 85/100/120/150 ns JEDEC Standard 32 pin DIL Footprint Operating Power 90 mW typ. Low Power Standby 400|iW (typ.) 50|iW (typ.) - L Version Completely Static Operation
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MS8512FKX-86/10/12/15
MS8512FKX
MS8512FKXLI-85
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MS8128SC
Abstract: No abstract text available
Text: Issue 3.0 : June 1989 MS8128SC-10/12/15 ly jg Q ^ 2 8 S C 128K x 8 CMOS SRAM M odule ADVANCE PRODUCT INFORMATION 131,072 x 8 CMOS High Speed Static RAM Pin Definition Features Access Times of 100/120/150 ns JEDEC Standard 32 pin DIL Footprint Operating Power
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MS8128SC-10/12/15
800jiW
MIL-STD-883C
MS8128SCLMB-10
MS8128SC
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Untitled
Abstract: No abstract text available
Text: 128K X 8 SRAM MSM8128-45/55/70 Issue 3.2 : January 1993 Pin Definition 131,072 x 8 CMOS High Speed Static RAM Features Very Fast Access Times of 45/55/70 ns JED EC Standard 32 pin DIL footprint VIL High Density Package Available Low Power Standby 50|iW typ.
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MSM8128-45/55/70
150mW
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: MS8128SC-55/70 Issue 3.0 : June 1989 28SC 128K x 8 CMOS SRAM M odule ADVANCE PRODUCT INFORMATION 131,072 X 8 CMOS High Speed Static RAM Features Fast Access Times of 55/70 JEDEC Standard 32 pin DIL Footprint Operating Power 115mW typ. Low Power Standby 40|xW (typ.)- U Version
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MS8128SC-55/70
115mW
MIL-STD-883C
MS8128SCUMB-55
MS0128SC-55/7O
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Untitled
Abstract: No abstract text available
Text: MSM8128S/K/V/W/J-85/10/12 Issue 1.0 : August 1989 MSM8128S/K/V/W/J l28Kx8Monoli,hicCM0SSRAM ADVANCE PRODUCT INFORMATION 131,072 x 8 CMOS High Speed Static RAM Features Pin Definition Package Type: 'S’,'K',’V' Fast Access Times of 85,100,120 nS JEDEC Standard 32 pin DIL Footprint
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MSM8128S/K/V/W/J-85/10/12
MSM8128S/K/V/W/J
10jiW
MIL-STD-883B
MSM8128S
MB-10
MIL-STD-883B
128S/K/V
/W/J-85/10/12
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