LMxxx
Abstract: No abstract text available
Text: DPBU Die Datasheet LMXXX MDA MWA EXAMPLE DIE DATASHEET DEVICE DISCRIPTION November 14,2002 DIE LAYOUT A-STEP DIE/WAFER CHARACTERISTICS Fabrication Attributes Physical Die Identification Die Step General Die Information LMXXX Bond Pad Opening Size 000µm x 000µm
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000mm
LMxxx
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Untitled
Abstract: No abstract text available
Text: Direct Link 1173 Products & Technologies Miniaturisierte Drucksensorelemente Februar 2009 Robuster Allrounder Nur noch 1,65 x 1,65 mm² messen die Sensorelemente der Familie C32. Die neuen Chips stattet EPCOS mit optimierten Bondpads aus, die über räumlich abgesetzte Testpad-Strukturen für Waferprober verfügen. Wie die
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C32Variante
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LRIS64K
Abstract: DSASW003741
Text: TN0193 Technical note LRIS64K bumped die description Product information • Product name: LRIS64K Wafer and die features July 2010 Wafer diameter: 8 inches Wafer thickness: 180 µm Die identification: M24RF64A1 Die finishing front side : SiO2 Die finishing (back side):
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TN0193
LRIS64K
LRIS64K
M24RF64A1
DSASW003741
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F37011
Abstract: No abstract text available
Text: TN0055 Technical note SRI4K die description Product information ● Product name: SRI4K ● Die code: P117ZMY Wafer and die features October 2007 Wafer diameter 8" Wafer thickness 180 µm Die technology F6SPs40s 3M 1P Diffusion Plant Chartered Die identification
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TN0055
P117ZMY
F6SPs40s
F37011
F37011
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IXTH110
Abstract: 851 36 RG 16 26 ixth110n25t IXTD110N25T-8W as001 A114B dimensions
Text: Preliminary Technical Information Trench Gate Power MOSFET Die IXTD110N25T-8W VDSS = 250V N-Channel Enhancement Mode Die Outline Notes: 1. Die Thickness: 200 ± 25 m 2. Die Size Tolerance: ± 50 μm 3. Top Bonding Pad Metal: 30 KÅ nominally thick Al 4. Back Metal: 3 layers of Ti, Ni & Au;
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IXTD110N25T-8W
22-A114-B
AS0011.
110N25T
1-08-A
IXTH110
851 36 RG 16 26
ixth110n25t
IXTD110N25T-8W
as001
A114B dimensions
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transistor MN1
Abstract: NAND Qualification Reliability HC00D SN74HC00 texas instruments lot trace code EN-4088Z HC00 HCT00 SN74HCT00 S01-06800
Text: TEXAS INSTRUMENTS Qualification Notification for the SN74HC00 and SN74HCT00, Die Revision K August 20, 1997 Abstract Texas Instruments qualified the SN74HC00 and SN74HCT00 die revision K, to replace the SN74HC00 die revision F and the SN74HCT00 die revision G. Die revision K is a product
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SN74HC00
SN74HCT00,
SN74HCT00
S01-06800
transistor MN1
NAND Qualification Reliability
HC00D
texas instruments lot trace code
EN-4088Z
HC00
HCT00
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Die Attach epoxy stamping
Abstract: 60022 pressure low die attach coefficient of thermal expansion of thermal conductive pressure sensitive adhesive
Text: Application Note Handling Gallium Arsenide Die Rev 2 INTRODUCTION Gallium arsenide die have physical properties that require special care in assembly to ensure high yields and good reliability. A few simple precautions in the die mounting and wire bonding operations
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8815 k
Abstract: 8810 WU-M-392 WU-M vossloh
Text: Wärmeleitende Transferklebebänder für LED-Module TM 3M Typ 8810 und Bergquist Bond-Ply 100 Durch die weiche Oberflächenbeschaffenheit können sich die Klebefolien auch unebenen Substraten anpassen und bieten eine große Klebkraft und Wärmekopplung. Die besondere
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297x23
8815 k
8810
WU-M-392
WU-M
vossloh
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MAX232
Abstract: EN-4088Z SN74ABT16240 SN74ABT16240A SN74ABT16241 SN74ABT16241A 1500KV ABT16241 Hitachi EN-4088Z ABT16240A
Text: TEXAS INSTRUMENTS Qualification Notification for the SN74ABT16240A and SN74ABT16241A, Die Revision D February 20, 1997 Abstract Texas Instruments qualified the SN74ABT16240A and SN74ABT16241A die revision D replacing die revision B. Die revision D includes an all layer change, which incorporates timing
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SN74ABT16240A
SN74ABT16241A,
SN74ABT16240A
SN74ABT16241A
SN74ABT16240
SN74ABT16241
ABT16241
ABT16241A
MAX232
EN-4088Z
1500KV
ABT16241
Hitachi EN-4088Z
ABT16240A
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ABT16541A
Abstract: SN74ABT16540 SN74ABT16540A SN74ABT16541 SN74ABT16541A abt245n ASL2B SN74ABT245 EN4088Z
Text: TEXAS INSTRUMENTS Qualification Notification for the SN74ABT16540A and SN74ABT16541A, Die Revision D May 14, 1997 Abstract Texas Instruments qualified the SN74ABT16540A and SN74ABT16541A die revision D, replacing die revision B. Die revision D includes an all layer change and improves the
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SN74ABT16540A
SN74ABT16541A,
SN74ABT16540A
SN74ABT16541A
SN74ABT16540
SN74ABT16541
SN74ABT16541
SN74ABT16541A
ABT16541A
abt245n
ASL2B
SN74ABT245
EN4088Z
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SN74ABT162823
Abstract: SN74ABT162823A
Text: TEXAS INSTRUMENTS Device Revision Notification for the ABT162823A Die Revision A August 9, 1996 Abstract Texas Instruments has qualified the SN74ABT162823A, Die Revision A, to replace the SN74ABT162823, Die Revision X. Die revision A was designed to improve ESD performance. Data
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ABT162823A
SN74ABT162823A,
SN74ABT162823,
SN74ABT162823A
ABT162823A
74ABT162823A
74ABT162823
ABT162823
SN74ABT162823
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outsourcing IBM
Abstract: avnet celestica flextronics national semiconductor CC
Text: Considerations in Converting from SMT to Die Assemblies National Semiconductor Technical Seminar Series Die Product Business Unit June 26 2003 1 Approaches, Options & Solutions • Die conversion trends and drivers • Die interconnect approaches • Device and information resources
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LP0701
Abstract: No abstract text available
Text: Supertex inc. LP0701 Die Specification Pad Layout 1 2 3 0,0 Backside: Drain Die Specifications Die Dimensions Device Length1 Width1 Thickness (mils) Back Side Metal 50 70 11 ± 1.5 None (mils) LP0701 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si
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LP0701
LP0701
A031110
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MAX3970
Abstract: No abstract text available
Text: Application Note: HFAN-8.0.1 Rev.1; 04/08 Understanding Bonding Coordinates and Physical Die Size Maxim Integrated Products Understanding Bonding Coordinates and Physical Die Size MAX3970 3 1 Introduction When calculating pad coordinates, there is often confusion between the die size specified in the data
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MAX3970
HF98Z
MAX3970
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Ablebond 71-1
Abstract: Ablebond 71 BCT8373 SN74BCT8373 SN74BCT8373A 5247 8 pin
Text: TEXAS INSTRUMENTS Qualification Notification for the SN74BCT8373A, Die Revision B February 7, 1996 Abstract Texas Instruments has qualified the SN74BCT8373A, Die Revision B, to replace the SN74BCT8373, no die revision. Die revision B was redesigned to conform to IEEE Standard 1149.11990 JTAG . The die and device revision are necessary to change the TDO drive state controls to
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SN74BCT8373A,
SN74BCT8373,
Ablebond 71-1
Ablebond 71
BCT8373
SN74BCT8373
SN74BCT8373A
5247 8 pin
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siemens matsua kondensator
Abstract: Siemens gleichrichter MKK-DC
Text: Leistungselektronik wird zunehmend integriert Mehr Power im System Die elektronische Revolution findet nicht nur in der digitalen Welt statt; für die Zukunft mindestens genauso wichtig sind die Herausforderungen beispielsweise an die Leistungselektronik. Das beweist der derzeitige Boom im Power-Bereich. Einer der
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Untitled
Abstract: No abstract text available
Text: Application Note Switch Die Measurement Fixture Rev 0 RELEVANT PRODUCTS • calibration structure and the other 24 elements are used to measure die. Figure 1 illustrates a measurement element for a single pole, double throw SPDT switch die. All ANADIGICS Switch Die
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SN74ABT5400
Abstract: SN74ABT5400A SN74ABT5402 SN74ABT5402A ABT5402A
Text: TEXAS INSTRUMENTS Qualification Notification for the SN74ABT5400A, Die Revision C SN74ABT5402A, Die Revision B April 26, 1996 Abstract Texas Instruments Advanced System Logic is issuing this notification to qualify the SN74ABT5400A, die revision C and the SN74ABT5402A, die revision B, to replace the
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SN74ABT5400A,
SN74ABT5402A,
SN74ABT5400,
SN74ABT5402,
ABT5402
ABT5402A
SN74ABT5400
SN74ABT5400A
SN74ABT5402
SN74ABT5402A
ABT5402A
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leistungs dioden siemens
Abstract: Siemens Electromechanical Components Siemens gleichrichter ferritkerne thyristor eupec
Text: Leistungselektronik wird zunehmend integriert Mehr Power im System Die elektronische Revolution findet nicht nur in der digitalen Welt statt; für die Zukunft mindestens genauso wichtig sind die Herausforderungen beispielsweise an die Leistungselektronik. Das beweist der derzeitige Boom im Power-Bereich. Einer der
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Untitled
Abstract: No abstract text available
Text: Packaging - Handling Gallium Arsenide Die Handling Gallium Arsenide Die Gallium arsenide die have physical properties that require special care in assembly to ensure high yields and good reliability. A few simple precautions in the die mounting and wire bonding
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transistor B 1184
Abstract: No abstract text available
Text: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Power Transistor Dice Die type Recommended source bond wire diameter1 urn Die topology Page 1.500 0.600 SIPC08P20 SIPC08P10 250 250 - 50 0.030 0.035 0.055 0.055 0.070 0.070 0.100 0.100 SIPC20AN05 SIPC20AN05L
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SIPC08P20
SIPC08P10
SIPC20AN05
SIPC20AN05L
SIPC14AN05
SIPC14AN05L
SIPC08AN05
SIPC08AN05L
SIPC06AN05
SIPC06AN05L
transistor B 1184
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irf*234 n
Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5
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4flSS455
irf*234 n
IRFBE40
IRF540 p-channel MOSFET
IRFBG40
irf540 800v
irfz24 mosfet
IRFCG50
IRFC034
HEXFET Guide
international rectifier d10
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Untitled
Abstract: No abstract text available
Text: Chip Mounting and Handling of GaAs MMIC Chips CHIP DIE DOWN BONDING TECHNIQUES Die Attach The important considerations for die attach are to have low thermal resistance, strong mechanical bond over the desired temperature range, and no damage occurring to the chip
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Untitled
Abstract: No abstract text available
Text: /= T SGS-THOMSON * 7 # . iMnaoiiLiCTisiMnei_ BUZ11A c h ip N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:
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BUZ11A
156x156
C-0071.
19source
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