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    DIDA BRIDGE Search Results

    DIDA BRIDGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK126BG Toshiba Electronic Devices & Storage Corporation Load Switch IC, 1 to 5.5 V, 1 A, WCSP4G Visit Toshiba Electronic Devices & Storage Corporation
    TCK127BG Toshiba Electronic Devices & Storage Corporation Load Switch IC, 1 to 5.5 V, 1 A, Auto-discharge, WCSP4G Visit Toshiba Electronic Devices & Storage Corporation
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    DIDA BRIDGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FET MOSFET transistor ""

    Abstract: AN569 MTB1306 dida bridge "DIDA" motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MTB1306/D DATA Advance Information HDTMOS E-FET ‘M High Density Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die


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    MTB1306/D OW1-2447 602-2H609 OG7741848 MTB1306~ FET MOSFET transistor "" AN569 MTB1306 dida bridge "DIDA" motorola PDF

    dida

    Abstract: No abstract text available
    Text: 2 4 A A 1 6 M ic r o c h ip 16K 1.8V CMOS Serial EEPROM FEATURES PACKAGE TYPE DIP • Single supply with operation down to 1,8V • Low power CMOS technology AO C 1 8 U Vcc - 1 m A active current typical - 10 pA standby current typical at 5.5V - 3 nA standby current typical at 1.8V


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