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    F1 J37

    Abstract: class-A amplifier RF NPN POWER TRANSISTOR 2.5 GHZ 1S2075 NEL2001 NEL200101-24 NEL2004 NEL2012 NEL2035
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier NEL2001012-24 of NPN epitaxial microwave power transistors 1.5 ±0.2 is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. 1.0 MIN. OUTLINE DIMENSIONS Unit: mm


    Original     		PDF NEL200101-24 NEL2001012-24 F1 J37 class-A amplifier RF NPN POWER TRANSISTOR 2.5 GHZ 1S2075 NEL2001 NEL200101-24 NEL2004 NEL2012 NEL2035

    VO6C

    Abstract: NEL2004 NEL2035 NEL2001 NEL2004F02-24 NEL2012 VO-6C
    Text: DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and 2 2 ±0.2 3 ±0.2 2 ±0.2


    Original     		PDF NEL2004F02-24 NEL2004F02-24 VO6C NEL2004 NEL2035 NEL2001 NEL2012 VO-6C

    HUGHES mcw 550

    Abstract: hughes welder welder hughes mcw 550 ECCOBOND 56c SN62PRMAB3 relative permittivity beryllium copper ferrite welder ECCOBOND 300 kester Re SOLDER PASTE mcw-550
    Text: Ferrodisc and Drop-In* Devices Overview Ferrodisc and Drop-In circulators and isolators manufactured by M/A-COM are ex­ tremely well suited for all types of microwave integrated circuits MIC’s . The rapidly growing awareness and utilization of these devices in microwave systems of all


    OCR Scan     		PDF