Di 762 transistor
Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
Text: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System
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PH1920-33
lN4245
73050258-S
Di 762 transistor
transistor a015
transistor npn a 1930
wacom connector
wacom
33w NPN
13MM
PH1920-33
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Untitled
Abstract: No abstract text available
Text: Rev 3: Nov 2004 AO4413, AO4413L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable
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AO4413,
AO4413L
AO4413
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Untitled
Abstract: No abstract text available
Text: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM
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AO4413
AO4413/L
AO4413
AO4413L
-AO4413L
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AO4413L
Abstract: AO4413
Text: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM
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AO4413
AO4413/L
AO4413
AO4413L
-AO4413L
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PDF
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Untitled
Abstract: No abstract text available
Text: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
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Original
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AO4413
AO4413
AO4413L
AO4413L
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PDF
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Untitled
Abstract: No abstract text available
Text: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
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AO4413
AO4413
AO4413L
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AOD403
Abstract: No abstract text available
Text: AOD403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for
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AOD403
AOD403
O-252
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Untitled
Abstract: No abstract text available
Text: AOD403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for
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AOD403
AOD403L
O-252
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PDF
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Untitled
Abstract: No abstract text available
Text: AOD403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for
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Original
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AOD403
AOD403
O-252
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PDF
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Untitled
Abstract: No abstract text available
Text: Rev 3: Nov 2004 AOD403, AOD403L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance
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Original
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AOD403,
AOD403L
AOD403
O-252
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PDF
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AOD403
Abstract: AOD403L
Text: AOD403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for
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AOD403
AOD403
AOD403L
O-252
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ic 109b
Abstract: MG100M2YK1 Di 762 transistor transistor B 764
Text: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling
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MG100M2YK1
-109B
ic 109b
MG100M2YK1
Di 762 transistor
transistor B 764
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BUZ171
Abstract: No abstract text available
Text: SIEMENS BUZ 171 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 2 Pin 1 Pin 3 D G S Type Vbs b f f DS on Package Ordering Code BUZ171 -50 V -8 A 0.3 Q TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Continuous drain current
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OCR Scan
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BUZ171
O-220
C67078-S1450-A2
fi23SbOS
GPT05155
235b05
BUZ171
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Untitled
Abstract: No abstract text available
Text: 712T237 D04LEGÔ 7bb •SGTH / = 7 SGS-THOMSON Ä 7# S T P 3 N 100X 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP 3N 100XI . . ■ . . ■ V dss RDS on Id 1000 V <61! 1.6 A AVALANCHE RUGGED TECHNO LOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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712T237
D04LEGÃ
100XI
ISOWATT221
STP3N100XI
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BUK445
Abstract: BUK445-60A BUK445-60B
Text: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711002b
BUK445-60A/B
-SOT186
DS/V-12/
ID/100
BUK445
BUK445-60A
BUK445-60B
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2N5754-2N5757
Abstract: 2N5754 RCA Triacs 2N5756 2N5757 rca triac 2N5755 E03G RCA TO-205
Text: G E SOLI» STATE 3875081 G E 01 SO LID STATE D E | 3Û7SG01 00177SS 7 | ~ 01E 17752 Triacs 2N5754-2N5757 File Number 414 2.5-A Silicon Triacs Features: • ■ ■ ■ Gate sen sitivity - 25 mA di/dt cap ab ility -1 0 0 A /fis L o w sw itch in g lo sse s Low -on-state voltage at high cu rren t levels
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3fl750fll
001775E
2N5754-2N5757
O-205
2N5754
2N5755
2N5756
2N5757
O-20S
0D177SS
2N5754-2N5757
RCA Triacs
2N5757
rca triac
E03G
RCA TO-205
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TC-5854
Abstract: 2SK479
Text: NEC m M O S Field E ffe c t P o w e r T ra n s is to r * = r i\ r x 2SK479 N f - t i ' ^ ' 7 -M O S FET x if f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use > M ^ ”7 - M 0 S F E T T t > t & 2SK479i±, ^ ^ H / P A C K A G E DIMENSIONS
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2SK479
2SK479Ã
Cycled50
TC-5854
2SK479
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2SC3733
Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
Text: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier
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2SA1460
2SC3733
12/PACKAGE
PWS10
CycleS50
2SC3733-T
La HL33
2SA1460
IMWS1
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la 5531
Abstract: TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83
Text: 7 s— S • 2 / — r* FAI A 3Q Compound Transistor # n m i t m ± : mm 2.8 + 0.2 1.5 (R i = 1.0 kQ, R 2= 10 kQ) o FN1A3Q £ ^ > v° 'J / 0 . 65-0.15 > ? 'J T'féffl T 'è £ 1" ( T a = 25 ° C ) g m -x. i 7 9 •^ -X fa ltE ?7f£) ^ u ? i7 ¡li;£
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PWS10
la 5531
TC6116
TC-6116
TC 6116
fn1a3q
FA1A3
Transistor L83
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Untitled
Abstract: No abstract text available
Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2
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2N1482/40349
2N1482)
2N1700
2N1482®
O-39/TO-205MD
92CS--24062
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rca 40411
Abstract: RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 BD181 rcs258 rca 40363
Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ { s a t )—V 'C E X - mA h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 M H z min; P j to 150 W max
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2N3055
2N6371
BD142
2N6253
BD181
BD182
2N6254
BD183
BD450
BD451
rca 40411
RCA 40251
2N3055 386 RCA
rca 2N3771 power circuit
3771 E1
BD182 rca
2n 3055
rcs258
rca 40363
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TRANSISTOR BJ 033
Abstract: 2SB1068 JAN 5751 m5ss
Text: SEC j ^ fx / \ Y 7 Silicon T ran sistor A 2SB1068 PN P Silicon Epitaxial Transistor Audio Frequency Amplifier ¡^ S / F E A T U R E S K W m /P A C K A G E DIMENSIONS oî&‘W.i±-kWiM.WM<n^— ÿ — V ÿ 4 ^ ' í r f f l í L T v", K F '^ O 'f , Unit : mm
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2SB1068
o2SD15131
PWS10
TRANSISTOR BJ 033
2SB1068
JAN 5751
m5ss
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ail4m
Abstract: FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M
Text: ± I /7N I ih Compound Transistor F N 1 L4 M i&ijtrtMPNPxfc 4# .' mm it o ^ r x L ^ ^ L T v ^ - r . 2 . 8 + 0.2 R i = 47 k£2, R 2= 47 kQ) o F A 1 L 4 M t 3 y y >J 9 y ? ') (T a = H £ to 2 5 °C ) B& g ^r 5e #r # z V CBO -6 0 V =i W 9 9 • J- = -y 9m 'M l±
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Ta-25Â
ail4m
FIM1L4M
1h0565
M31 marking transistor
TRANSISTOR IFW
la 5531
FN1L4M
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c 3281 transistor
Abstract: J196 lm 4011 TL 5551 2SJ196 511-N TI484 i4141 ScansUX882 sd 484 ip
Text: Mos M O S Field Effect Transistor 2 S J 1 9 6 P 2SJ196 l i P i z * f t ? ' / « x i jjS Œ MOS F E T V , 5 V > 7 f > I C mm V & tl mm / i f t t » MOS F E T Ü t Òtzòb, i - ? , H U MOS F E T &i # a r v* 'j I / —, V u / O * ^ < 7 7 5 . 2 MAX muglili:
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2SJ196
2SJ196
2SK1482
c 3281 transistor
J196
lm 4011
TL 5551
511-N
TI484
i4141
ScansUX882
sd 484 ip
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