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    DI 762 TRANSISTOR Search Results

    DI 762 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DI 762 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Di 762 transistor

    Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
    Text: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System


    Original     		PDF PH1920-33 lN4245 73050258-S Di 762 transistor transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33

    Untitled

    Abstract: No abstract text available
    Text: Rev 3: Nov 2004 AO4413, AO4413L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable


    Original     		PDF AO4413, AO4413L AO4413

    Untitled

    Abstract: No abstract text available
    Text: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO4413 AO4413/L AO4413 AO4413L -AO4413L

    AO4413L

    Abstract: AO4413
    Text: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM


    Original     		PDF AO4413 AO4413/L AO4413 AO4413L -AO4413L

    Untitled

    Abstract: No abstract text available
    Text: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4413 AO4413 AO4413L AO4413L

    Untitled

    Abstract: No abstract text available
    Text: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.


    Original     		PDF AO4413 AO4413 AO4413L

    AOD403

    Abstract: No abstract text available
    Text: AOD403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for


    Original     		PDF AOD403 AOD403 O-252

    Untitled

    Abstract: No abstract text available
    Text: AOD403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for


    Original     		PDF AOD403 AOD403L O-252

    Untitled

    Abstract: No abstract text available
    Text: AOD403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for


    Original     		PDF AOD403 AOD403 O-252

    Untitled

    Abstract: No abstract text available
    Text: Rev 3: Nov 2004 AOD403, AOD403L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance


    Original     		PDF AOD403, AOD403L AOD403 O-252

    AOD403

    Abstract: AOD403L
    Text: AOD403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for


    Original     		PDF AOD403 AOD403 AOD403L O-252

    ic 109b

    Abstract: MG100M2YK1 Di 762 transistor transistor B 764
    Text: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling


    OCR Scan     		PDF MG100M2YK1 -109B ic 109b MG100M2YK1 Di 762 transistor transistor B 764

    BUZ171

    Abstract: No abstract text available
    Text: SIEMENS BUZ 171 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 2 Pin 1 Pin 3 D G S Type Vbs b f f DS on Package Ordering Code BUZ171 -50 V -8 A 0.3 Q TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF BUZ171 O-220 C67078-S1450-A2 fi23SbOS GPT05155 235b05 BUZ171

    Untitled

    Abstract: No abstract text available
    Text: 712T237 D04LEGÔ 7bb •SGTH / = 7 SGS-THOMSON Ä 7# S T P 3 N 100X 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP 3N 100XI . . ■ . . ■ V dss RDS on Id 1000 V <61! 1.6 A AVALANCHE RUGGED TECHNO LOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF 712T237 D04LEGÃ 100XI ISOWATT221 STP3N100XI

    BUK445

    Abstract: BUK445-60A BUK445-60B
    Text: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF 711002b BUK445-60A/B -SOT186 DS/V-12/ ID/100 BUK445 BUK445-60A BUK445-60B

    2N5754-2N5757

    Abstract: 2N5754 RCA Triacs 2N5756 2N5757 rca triac 2N5755 E03G RCA TO-205
    Text: G E SOLI» STATE 3875081 G E 01 SO LID STATE D E | 3Û7SG01 00177SS 7 | ~ 01E 17752 Triacs 2N5754-2N5757 File Number 414 2.5-A Silicon Triacs Features: • ■ ■ ■ Gate sen sitivity - 25 mA di/dt cap ab ility -1 0 0 A /fis L o w sw itch in g lo sse s Low -on-state voltage at high cu rren t levels


    OCR Scan     		PDF 3fl750fll 001775E 2N5754-2N5757 O-205 2N5754 2N5755 2N5756 2N5757 O-20S 0D177SS 2N5754-2N5757 RCA Triacs 2N5757 rca triac E03G RCA TO-205

    TC-5854

    Abstract: 2SK479
    Text: NEC m M O S Field E ffe c t P o w e r T ra n s is to r * = r i\ r x 2SK479 N f - t i ' ^ ' 7 -M O S FET x if f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use > M ^ ”7 - M 0 S F E T T t > t & 2SK479i±, ^ ^ H / P A C K A G E DIMENSIONS


    OCR Scan     		PDF 2SK479 2SK479Ã Cycled50 TC-5854 2SK479

    2SC3733

    Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
    Text: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier


    OCR Scan     		PDF 2SA1460 2SC3733 12/PACKAGE PWS10 CycleS50 2SC3733-T La HL33 2SA1460 IMWS1

    la 5531

    Abstract: TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83
    Text: 7 s— S • 2 / — r* FAI A 3Q Compound Transistor # n m i t m ± : mm 2.8 + 0.2 1.5 (R i = 1.0 kQ, R 2= 10 kQ) o FN1A3Q £ ^ > v° 'J / 0 . 65-0.15 > ? 'J T'féffl T 'è £ 1" ( T a = 25 ° C ) g m -x. i 7 9 •^ -X fa ltE ?7f£) ^ u ? i7 ¡li;£


    OCR Scan     		PDF PWS10 la 5531 TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2


    OCR Scan     		PDF 2N1482/40349 2N1482) 2N1700 2N1482® O-39/TO-205MD 92CS--24062

    rca 40411

    Abstract: RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 BD181 rcs258 rca 40363
    Text: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ { s a t )—V 'C E X - mA h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 M H z min; P j to 150 W max


    OCR Scan     		PDF 2N3055 2N6371 BD142 2N6253 BD181 BD182 2N6254 BD183 BD450 BD451 rca 40411 RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 rcs258 rca 40363

    TRANSISTOR BJ 033

    Abstract: 2SB1068 JAN 5751 m5ss
    Text: SEC j ^ fx / \ Y 7 Silicon T ran sistor A 2SB1068 PN P Silicon Epitaxial Transistor Audio Frequency Amplifier ¡^ S / F E A T U R E S K W m /P A C K A G E DIMENSIONS oî&‘W.i±-kWiM.WM<n^— ÿ — V ÿ 4 ^ ' í r f f l í L T v", K F '^ O 'f , Unit : mm


    OCR Scan     		PDF 2SB1068 o2SD15131 PWS10 TRANSISTOR BJ 033 2SB1068 JAN 5751 m5ss

    ail4m

    Abstract: FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M
    Text: ± I /7N I ih Compound Transistor F N 1 L4 M i&ijtrtMPNPxfc 4# .' mm it o ^ r x L ^ ^ L T v ^ - r . 2 . 8 + 0.2 R i = 47 k£2, R 2= 47 kQ) o F A 1 L 4 M t 3 y y >J 9 y ? ') (T a = H £ to 2 5 °C ) B& g ^r 5e #r # z V CBO -6 0 V =i W 9 9 • J- = -y 9m 'M l±


    OCR Scan     		PDF Ta-25Â ail4m FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M

    c 3281 transistor

    Abstract: J196 lm 4011 TL 5551 2SJ196 511-N TI484 i4141 ScansUX882 sd 484 ip
    Text: Mos M O S Field Effect Transistor 2 S J 1 9 6 P 2SJ196 l i P i z * f t ? ' / « x i jjS Œ MOS F E T V , 5 V > 7 f > I C mm V & tl mm / i f t t » MOS F E T Ü t Òtzòb, i - ? , H U MOS F E T &i # a r v* 'j I / —, V u / O * ^ < 7 7 5 . 2 MAX muglili:


    OCR Scan     		PDF 2SJ196 2SJ196 2SK1482 c 3281 transistor J196 lm 4011 TL 5551 511-N TI484 i4141 ScansUX882 sd 484 ip