for LED
Abstract: DH 3 V FGEH FYEH
Text: A LED-holders for front panel assembly suitable for 3 mm diodes with a collar height of 0.6 mm B 3,5 K C 2,54 0,5 2,5 D Ø6 Ø 4,2 3 5 4 2 art. no. no LED DH 3 V art. no. with LED DH 3 V S 34 M DH 3 V Y 34 M DH 3 V G 33 M emission colour super red yellow green
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SMD LED holders
Abstract: FGEH
Text: A LED-holders for SMD-mounting standard case, diffuse lens, standard colours, compatible reflow 9 4,4 1 2 1 7,2 Ø3 C 5,8 7,3 5,2 6,5 2,5 B 4 2 1 2,5 D art. no. DH 3 E ST ESEH DH 3 E ST EYEH emission colour red yellow art. no. DH 3 E ST EGEH DH 3 E ST EGEH
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Untitled
Abstract: No abstract text available
Text: TLVD4200 Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES 19231 DESCRIPTION The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red GaAlAs on GaAs technology. Due to its special shape
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TLVD4200
2002/95/EC
2002/96/EC
TLVD4200
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: TLVD42Q1S2 Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES 19231 DESCRIPTION The TLVD42Q1S2 series was developed for backlighting in the extrem bright double heterojunction DH red GaAlAs on GaAs technology. Due to its
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TLVD42Q1S2
2002/95/EC
2002/96/EC
TLVD42Q1S2
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: TLVD42Q1S2 www.vishay.com Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES • High brightness • Wide viewing angle • Categorized for luminous flux • Available in DH red • Tinted clear package • Low power dissipation
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TLVD42Q1S2
2002/95/EC
2002/96/EC
TLVD42Q1S2
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: TLVD4200 VISHAY Vishay Semiconductors DH Backlighting LED in ∅ 3 mm Tinted Non-Diffused Package Description The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red GaAlAs on GaAs technology. Due to its special shape
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TLVD4200
TLVD4200
D-74025
23-Jul-04
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TLVD4200
Abstract: No abstract text available
Text: TLVD4200 VISHAY Vishay Semiconductors DH Backlighting LED in ∅ 3 mm Tinted Non-Diffused Package Description The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red GaAlAs on GaAs technology. Due to its special shape
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TLVD4200
TLVD4200
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TLVD42Q1S2 www.vishay.com Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES • High brightness • Wide viewing angle • Categorized for luminous flux • Available in DH red • Tinted clear package • Low power dissipation
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TLVD42Q1S2
2002/95/EC
2002/96/EC
TLVD42Q1S2
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: TLVD4200 Vishay Semiconductors DH Backlighting LED in ∅ 3 mm Tinted Non-Diffused Package FEATURES 19231 DESCRIPTION The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red GaAlAs on GaAs technology. Due to its special shape
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TLVD4200
TLVD4200
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TLVD42. www.vishay.com Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES • High brightness • Wide viewing angle • Categorized for luminous flux • Available in DH red • Tinted clear package • Low power dissipation
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TLVD42.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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TLVD4200
Abstract: No abstract text available
Text: TLVD4200 Vishay Semiconductors DH Backlighting LED in ∅ 3 mm Tinted Non-Diffused Package FEATURES 19231 DESCRIPTION The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red GaAlAs on GaAs technology. Due to its special shape
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TLVD4200
TLVD4200
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: TLVD4200 Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES 19231 DESCRIPTION The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red GaAlAs on GaAs technology. Due to its special shape
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TLVD4200
2002/95/EC
2002/96/EC
TLVD4200
18-Jul-08
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TLVD4200
Abstract: No abstract text available
Text: TLVD4200 VISHAY Vishay Semiconductors DH Backlighting LED in ∅ 3 mm Tinted Non-Diffused Package Description The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red GaAlAs on GaAs technology. Due to its special shape
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TLVD4200
TLVD4200
D-74025
31-Aug-04
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Untitled
Abstract: No abstract text available
Text: TLVD4200 VISHAY Vishay Semiconductors DH Backlighting LED in ∅ 3 mm Tinted Non-Diffused Package Description The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red GaAlAs on GaAs technology. Due to its special shape
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TLVD4200
TLVD4200
D-74025
24-Jun-04
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Untitled
Abstract: No abstract text available
Text: TLVD4200 VISHAY Vishay Semiconductors DH Backlighting LED in ∅ 3 mm Tinted Non-Diffused Package Description The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red GaAlAs on GaAs technology. Due to its special shape
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TLVD4200
TLVD4200
D-74025
15-Jul-04
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Untitled
Abstract: No abstract text available
Text: TLVD4200 www.vishay.com Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES • High brightness • Wide viewing angle • Categorized for luminous flux • Available in DH red • Tinted clear package 19231 • Low power dissipation
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TLVD4200
TLVD4200
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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TLDR4400
Abstract: No abstract text available
Text: TLDR4400 TELEFUNKEN Semiconductors Very High Intensity DH–red LED, ø 3 mm Tinted Diffused Color Double hetero red Type TLDR4400 Technology GaAlAs on GaAs Angle of half intensity ±ö 40° Description This LED contains the double heterojunction DH GaAlAs on GaAs technology.
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TLDR4400
D-74025
TLDR4400
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TLDR4100
Abstract: No abstract text available
Text: TLDR4100 TELEFUNKEN Semiconductors Very High Intensity DH–red LED in ø 3 mm Clear Package Color Double hetero red Type TLDR4100 Technology GaAlAs on GaAs Angle of half intensity ±ö 22° Description This LED contains the double heterojunction DH GaAlAs on GaAs technology.
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TLDR4100
D-74025
TLDR4100
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TLVD4200
Abstract: No abstract text available
Text: TLVD420. Vishay Telefunken DH Backlighting LED in ø 3 mm Tinted Non-Diffused Package Color Double hetero red Type TLVD4200 Technology GaAlAs on GaAs Angle of Half Intensity ±ö 85° Description The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red
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TLVD420.
TLVD4200
TLVD4200
D-74025
04-Feb-99
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TLVD4200
Abstract: No abstract text available
Text: TLVD420. Vishay Semiconductors DH Backlighting LED in ø 3 mm Tinted Non-Diffused Package Color Double hetero red Type Technology TLVD4200 GaAlAs on GaAs Angle of Half Intensity ±ö 85° Description The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red
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TLVD420.
TLVD4200
TLVD4200
D-74025
07-Sep-00
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TLVD4200
Abstract: No abstract text available
Text: TLVD420. Vishay Telefunken DH Backlighting LED in ø 3 mm Tinted Non-Diffused Package Color Double hetero red Type Technology TLVD4200 GaAlAs on GaAs Angle of Half Intensity ±ö 85° Description The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red
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TLVD420.
TLVD4200
TLVD4200
D-74025
07-Sep-00
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Untitled
Abstract: No abstract text available
Text: TLVD420. Vishay Telefunken DH Backlighting LED in ø 3 mm Tinted Non-Diffused Package Color Double hetero red Type TLVD4200 Technology GaAlAs on GaAs Angle of Half Intensity ±ö 85° Description The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction DH red
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TLVD420.
TLVD4200
TLVD4200
D-74025
07-Sep-00
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Untitled
Abstract: No abstract text available
Text: S-80720SN-DH IL08 C-MOS VOLTAGE DETECTOR —TOP VIEW— NC 5 NC 4 2 OUT VDD GND 1 2 OUT 3 3 VDD GND VDD 2 VOLTAGE DETECT 1 3 GND OUT 1
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S-80720SN-DH
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DIODE T25 4 H5
Abstract: diode t25 4 L0 T25 4 h5 DIODE T25 4 DIODE T25 DIODE T25 4 C diode t25 4 A0 V126 SEMITOP weight THYRISTOR tv 930
Text: SK 70 DH V RW i- V OFM V k - 68 A fu ll co n d uce s« V 9C0 800 S K 70 DH 08 1300 1200 S K 70 DH 12 1700 1600 S K 70 DH 16 S ym bol C o n d itio n s 'o T # - 8 0 -C •f sm •' T ^ - 2 5 *C ; 10 ms C V -e o -c ) V alues - 126 *C; 1 0 m s SEMITOP 3 Half Controlled Bridge
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