Untitled
Abstract: No abstract text available
Text: OKAYA Electric America, Inc. SPECIFICATIONS PG-95014 Ver.0 PH-06005-005 DRAWING CODE RS480272T-4X3WQ-A-CTP PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) (CAPACITIVE TP) SAMPLE CODE (This Code will be changed while mass production) MASS PRODUCTION CODE RG12032LRS-DGB-B
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PG-95014
PH-06005-005
RS480272T-4X3WQ-A-CTP
PS320240T-004-I05
PS12032LRS-DGB-B01
RG12032LRS-DGB-B
RH320240T-004-IY3
PS0405105)
PT-A-005-4
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Untitled
Abstract: No abstract text available
Text: OKAYA Electric America, Inc. SPECIFICATIONS DRAWING CODE PG-95014 Ver.0 PH-06005-005 SAMPLE CODE PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) (This Code will be changed while mass production) MASS PRODUCTION CODE RG12032LRS-DGB-B RH320240T-004-IY3 RS800480T-5X0WN-A
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PG-95014
PH-06005-005
PS320240T-004-I05
PS12032LRS-DGB-B01
RG12032LRS-DGB-B
RH320240T-004-IY3
RS800480T-5X0WN-A
PS0405105)
PT-A-005-4
RS800480T-5X0WN-A
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Untitled
Abstract: No abstract text available
Text: OKAYA Electric America, Inc. SPECIFICATIONS PG-95014 Ver.0 PH-06005-005 DTE-06098 (VER.0) DRAWING CODE PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) PS240128WRM-AGA-I01Q SAMPLE CODE (This Code will be changed while mass production) MASS PRODUCTION CODE RG12032LRS-DGB-B
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PG-95014
PH-06005-005
DTE-06098
PS320240T-004-I05
PS12032LRS-DGB-B01
PS240128WRM-AGA-I01Q
RG12032LRS-DGB-B
RS800480T-7X0DH-AL1
RH320240T-004-IY3
RG240128WRM-AGA-I01
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Untitled
Abstract: No abstract text available
Text: OKAYA Electric America, Inc. SPECIFICATIONS DRAWING CODE PG-95014 Ver.0 PH-06005-005 SAMPLE CODE PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) (This Code will be changed while mass production) MASS PRODUCTION CODE RG12032LRS-DGB-B RS800480T-7X0WQ-A RH320240T-004-IY3
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Original
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PG-95014
PH-06005-005
PS320240T-004-I05
PS12032LRS-DGB-B01
RG12032LRS-DGB-B
RS800480T-7X0WQ-A
RH320240T-004-IY3
RS800480T-7X0WHP-A
PS0405105)
PT-A-005-4
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Untitled
Abstract: No abstract text available
Text: OKAYA Electric America, Inc. SPECIFICATIONS DRAWING CODE PG-95014 Ver.0 PH-06005-005 SAMPLE CODE PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) (This Code will be changed while mass production) MASS PRODUCTION CODE RG12032LRS-DGB-B RS800480T-7x0WN-A RH320240T-004-IY3
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Original
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PDF
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PG-95014
PH-06005-005
PS320240T-004-I05
PS12032LRS-DGB-B01
RG12032LRS-DGB-B
RS800480T-7x0WN-A
RH320240T-004-IY3
RV240320T-2X4WN-A2
PS0405105)
PT-A-005-4
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Untitled
Abstract: No abstract text available
Text: OKAYA Electric America, Inc. SPECIFICATIONS PG-95014 Ver.0 PH-06005-005 DTE-06098 (VER.0) DRAWING CODE PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) PS240128WRM-AGA-I01Q SAMPLE CODE (This Code will be changed while mass production) MASS PRODUCTION CODE RG12032LRS-DGB-B
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Original
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PDF
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PG-95014
PH-06005-005
DTE-06098
PS320240T-004-I05
PS12032LRS-DGB-B01
PS240128WRM-AGA-I01Q
RG12032LRS-DGB-B
RG240128WRM-AGA-I01
RS800480T-7X0DG-AL1
RH320240T-004-IY3
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Untitled
Abstract: No abstract text available
Text: OKAYA Electric America, Inc. SPECIFICATIONS DRAWING CODE PG-95014 Ver.0 PH-06005-005 DTE-06098 (VER.0) SAMPLE CODE PS320240T-004-I05 PS12032LRS-DGB-B01(Ver.0) RS800480T-7X0WP-1 PS240128WRM-AGA-I01Q (This Code will be changed while mass production) MASS PRODUCTION CODE
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Original
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PDF
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PG-95014
PH-06005-005
DTE-06098
PS320240T-004-I05
PS12032LRS-DGB-B01
RS800480T-7X0WP-1
PS240128WRM-AGA-I01Q
RG12032LRS-DGB-B
RG240128WRM-AGA-I01
RS800480T-7X0GP-A
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SK10GD126ET
Abstract: No abstract text available
Text: SK10GD126ET # , -. /0 Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 6.7 / %9: 6-77 1 6. ' # , 87 / 66 ' 6; ' < -7 1 #4 , 6-. / 67 @ # , -. / -. ' # , 87 / 6A ' B7 ' %9:, - % 1 , ;77 1= 1&2 > -7 1=
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SK10GD126ET
SK10GD126ET
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SK10GD126ET
Abstract: IGBT MODULE
Text: SK10GD126ET # , -. /0 Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 6.7 / %9: 6-77 1 6. ' # , 87 / 66 ' 6; ' < -7 1 #4 , 6-. / 67 @ # , -. / -. ' # , 87 / 6A ' B7 ' %9:, - % 1 , ;77 1= 1&2 > -7 1=
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SK10GD126ET
SK10GD126ET
IGBT MODULE
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Untitled
Abstract: No abstract text available
Text: SK10GD126ET # , -. /0 Absolute Maximum Ratings Symbol Conditions IGBT 123 #4 , -. / % #4 , 6.7 / %9: 6-77 1 6. ' # , 87 / 66 ' 6; ' < -7 1 #4 , 6-. / 67 @ # , -. / -. ' # , 87 / 6A ' B7 ' %9:, - % IGBT Module
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SK10GD126ET
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15N100
Abstract: No abstract text available
Text: PIXYS : MegaMOS FET IXTN 15N100 V DSS ID25 1000 V 15 A D 0.6 Q DS on N-Channel Enhancement Mode Symbol Test Conditions v Tj =25°Cto150°C 1000 V v DGB T, =25°C to 150° C; RGS= 10k£2 1000 V VGS VGSM Continuous ¿20 V Transient d30 V Us Tc =25°C 15 A
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15N100
OT-227
Cto150
C2-90
C2-91
15N100
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6953-B
Abstract: 7812A AH413 700201 CV2154 AH370 ML40150 DH 408 diode dmf 612 14094 b
Text: ML 4000 SERIES EQUIVALENT PARTS LIST The majority o f C.V. register and commercial microwave diodes can be provided depending on demand. M/A-COM Ltd also provides a second source of direct equivalents to other manufacturers devices, the majority o f which are approved for space use. A comprehensive equivalents list is provided below.
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ML40464
ML40462
ML40461
ML4649-30
ML4650-30
ML4649-56
ML4650-56
6953-B
7812A
AH413
700201
CV2154
AH370
ML40150
DH 408 diode
dmf 612
14094 b
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Untitled
Abstract: No abstract text available
Text: Æ 7 SGS-THOMSON *7 £ liMD l^i[L[l@M RD[l 8 BYT 12-200-^400 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING SUITABLE APPLICATIONS: ■ FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS
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2SK2388
Abstract: No abstract text available
Text: TOSHIBA 2SK2388 Field Effect Transistor Unit in mm Silicon N Channel MOS Type tc-MOS IV i0±0.] 0U2±Q2 t :rt „o *1 2.7 ± 0.2 High Speed, High Current Switching, DC-DC Converter . Chopper Regulator and Motor Drive Applications Features • 4V Gate Drive
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2SK2388
--600V
00A/HS
2SK2388
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2SK2057
Abstract: LDR voltage range
Text: TOSHIBA 2SK2057 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ‘ ^D S (O N ) = 0.24Q (Typ.) • High Forward Transfer Admittance
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2SK2057
2SK2057
LDR voltage range
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2SK1345
Abstract: No abstract text available
Text: TOSHIBA 2SK1345 Field Effect Transistor Silicon N Channel MOS Type L2-t>MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications F e a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance “ ^ D S ( O N ) = 0.042£2 (Typ.)
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2SK1345
2SK1345
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MC3479C
Abstract: No abstract text available
Text: Æ * T 71» S G S -T H O M S O N IlflgesmiSTOMlES MC3479C S T E P P E R . SINGLE SUPPLY OPERATION + 7.2 V TO +16 V . 350 mA/ COIL DRIVE CAPABILITY . BUILT IN FAST PROTECTION DIODES • SELECTABLE CW/CCW AND FULL/HALF STEP OPERATION « SELECTABLE HIGH/LOW OUTPUT IMPED
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MC3479C
MC3479C
7T2T537
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fccj
Abstract: IRLSZ34A T0-220F RS27n
Text: IRLSZ34A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVdss = 60 V Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jiA Max. @ VDS = 60V
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IRLSZ34A
T0-220F
fccj
IRLSZ34A
T0-220F
RS27n
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Untitled
Abstract: No abstract text available
Text: Standard Power MOSFETs BUZ 76 Füe Number 2264 N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3 A, 400 V TDS Ionl = 1 . 8 f i Features: • SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics
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O-220AB
L320Vv
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2SK2038
Abstract: Transistor TOSHIBA 2SK
Text: TOSHIBA 2SK2038 Field Effect Transistor U n it in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • R ds (ON) = 1 (Typ-) • High Forward Transfer Adm ittance - Yfs' = 3.OS (Typ.)
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2SK2038
DRAI11
2SK2038
Transistor TOSHIBA 2SK
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2SK1917
Abstract: SiC POWER MOSFET 2SK1917-M ups electrical symbols A2266
Text: 2SK1917-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET ^ • Features SER IE S ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • Vc,s = ± 3 0 V G uarantee
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2SK1917-M
032tf
SC-67
20Kil)
2SK1917
SiC POWER MOSFET
ups electrical symbols
A2266
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BUK428-500B
Abstract: BUK428
Text: Ph ilips C o m p o n e n ts Data sheet status Product specification date of issue March 1991 BUK428-500B PowerMOS transistor GENERAL DESCRIPTION tsl-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope. The devicç is intended fo r use in
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BUK428-500B
7110fl2ti
-SOT199
BUK428-500B
BUK428
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250M
Abstract: SSP4N90
Text: N-CHANNEL POWER MOSFETS SSP4N90 FEATURES • Low er R d s o n • Im proved in d u c tiv e ru ggedness • Fast s w itc h in g tim e s • R ugged po ly s ilic o n ga te cell s tru c tu re • L o w e r in p u t c a p a c ita n c e • E xtended safe o p e ra tin g area
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SSP4N90
SSP4N90
O-220
ib4142
250M
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Untitled
Abstract: No abstract text available
Text: S IE M E N S TEMPFET BTS 903 Preliminary Data VDS l0 = -2 0 0 V = -3 .6 A ^DS on = ^*5 Q • • • • P channel Enhancement mode Temperature sensor with thyristor characteristic Package T O -2 2 0 /5 1) Observe circuit design hints (see chapter Technical Information)!
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C67078-S5800-A2
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