Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DF TRANSISTOR Search Results

    DF TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    DF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3RG7847-4BF

    Abstract: 3RG7202-3CC00 3RG78 3RG7842 siguard 3RG7841 3zx1012 3RG7202-3BG00 Siemens Optical Sender 3rg7847-4b
    Text: 4BDF-DE.book Seite 1 Montag, 7. August 2000 10:20 22 Auswertegerät 3RG7847-4B/DF mit Mutingfunktion für SIGUARD Lichtvorhänge Evaluation Unit 3RG7847-4B/DF with Muting Function for SIGUARD Light Curtains Technische Anleitung Instruction Manual Bestell-Nr./Order No. 3ZX1012-0RG78-4FA1


    Original     		PDF 3RG7847-4B/DF 3ZX1012-0RG78-4FA1 3RG7847-4B/DF. sachge99 3RG7847-4BF D-92220 3RG7847-4BF 3RG7202-3CC00 3RG78 3RG7842 siguard 3RG7841 3zx1012 3RG7202-3BG00 Siemens Optical Sender 3rg7847-4b

    DF2-DC24V

    Abstract: DF2-L2-DC12V matsua DF2-DC12V DF2-L2-DC24V df2-dc5v DF2-DC12V Relay Matsushita DS2 Relay Matsushita DS2 m df2-dc9v Relay Matsua DS2 m
    Text: DF HIGHLY SENSITIVE DIP MINIATURE RELAY 16 .630 DF-RELAYS UL File No.: E43149 CSA File No.: LR26550 9.9 .390 • Smaller than most of 2 Form C relays Header area: 80% of DS2 relay Cubic measure: 57% of DS2 relay • High sensitivity — 100 mW nominal power


    Original     		PDF E43149 LR26550 DF2-DC24V DF2-L2-DC12V matsua DF2-DC12V DF2-L2-DC24V df2-dc5v DF2-DC12V Relay Matsushita DS2 Relay Matsushita DS2 m df2-dc9v Relay Matsua DS2 m

    IR2086S

    Abstract: BAV16WDICT "FULL-BRIDGE DC BUS CONVERTER" rectifier schematic zener db3 GRM188R61C105KA93D t2a sot23 IR2086 bridge rectifier 2A IRF7380
    Text: IRDC2086S-DF DEMO BOARD EVALUATION PROCEDURE International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Overview This document describes how to connect and evaluate the supplied IRDC2086S-DF demo board. The demo board incorporates a new DC Bus Converter chipset in a fixed-frequency, open-loop isolated full-bridge DC-DC


    Original     		PDF IRDC2086S-DF IR2086S) IRF7493) IRF6603) IRF7380) IRF9956) IR2086S PQ20/16-3F3 IR2086S BAV16WDICT "FULL-BRIDGE DC BUS CONVERTER" rectifier schematic zener db3 GRM188R61C105KA93D t2a sot23 IR2086 bridge rectifier 2A IRF7380

    BCW88H

    Abstract: BCW67CR BCW67 BCW67A BCW67AR BCW67B BCW67BR BCW67C BCW68F BCW68FR
    Text: BCW67 BCW68 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4- JUNE 1996 PARTMARKING DETAILS - BCW67A - DA BCW67AR - 4W BCW67B - DB BCW67BR - 5W BCW67C - DC BCW67CR - 6W BCW68F - DF BCW68FR - 7T BCW68G - DG BCW68GR - 5T BCW68H - DH BCW68HR - 7N COMPLEMENTARY


    Original     		PDF BCW67 BCW68 BCW67A BCW67AR BCW67BR BCW67C BCW67CR BCW68F BCW68FR BCW67B BCW88H BCW67

    df transistor

    Abstract: BDT30AF BDT30BF BDT30CF BDT30DF BDT30F
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= -0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF


    Original     		PDF BDT30F/AF/BF/CF/DF BDT30F; BDT30AF BDT30BF; -100V BDT30CF -120V BDT30DF BDT29F/AF/BF/CF/DF BDT30F df transistor BDT30AF BDT30BF BDT30CF BDT30DF BDT30F

    NPN Transistor VCEO 80V 100V

    Abstract: BDT31F BDT31AF BDT31BF BDT31CF BDT31DF
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF DESCRIPTION •DC Current Gain -hFE = 25 Min @ IC= 1.0A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF


    Original     		PDF BDT31F/AF/BF/CF/DF BDT31F; BDT31AF BDT31BF; BDT31CF BDT31DF BDT32F/AF/BF/CF/DF BDT31F BDT31BF NPN Transistor VCEO 80V 100V BDT31F BDT31AF BDT31BF BDT31CF BDT31DF

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB65UPE DFN1010D-3 OT1215)

    BCW68GR

    Abstract: BCW68HR BCW68GR-5T BCW66 BCW68 BCW68F BCW68FR BCW68G BCW68H
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCW68 ISSUE 5 - MARCH 2001 PARTMARKING DETAILS – BCW68F – BCW68G – BCW68H – DF DG DH BCW68FR – BCW68GR – BCW68HR – 7T 5T 7N E C B COMPLEMENTARY TYPES – BCW66 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original     		PDF BCW68 BCW68F BCW68G BCW68H BCW68FR BCW68GR BCW68HR BCW66 BCW68tance -10mA BCW68GR BCW68HR BCW68GR-5T BCW66 BCW68 BCW68F BCW68FR BCW68G BCW68H

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB56EN DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic


    Original     		PDF PMCXB900UE DFN1010B-6 OT1216)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB65ENE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB120EPE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB40UNE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB40UNE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N 20 20 MD -6 PMPB20EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMPB20EN DFN2020MD-6 OT1220)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB350UPE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB360ENEA 80 V, N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB360ENEA DFN1010D-3 OT1215) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPW11N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/df rated • Optimized capacitances • Improved noise immunity • Former development designation:


    OCR Scan     		PDF SPW11N60S5 SPWx2N60S5 11N60S5 P-T0247 11N60S5 Q67040-S4239

    VPT09051

    Abstract: VPT09050 SPD01N50M2 SPU01N50M2 DIODE MARKING CODE 623
    Text: In fin eon SPU01N50M2 SPD01N50M2 Target data sheet technologies Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/df rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPUx7N60S5/SPDx7N60S5 SPU01N50M2 SPD01N50M2 VPT09050 VPT09051 SPU01N50M2 P-T0251 01N50M2 Q67040-S4324 VPT09051 VPT09050 SPD01N50M2 DIODE MARKING CODE 623

    TIP626

    Abstract: No abstract text available
    Text: TEXAS INSTR ~b2 - COPTO} 8961726 TEXAS . ' «_•. : ' INSTR dF | ÖTblTEb D 0 3 b c]b4 ß 62C <OPTO 36964 " TIP625, TIP626, TIP627 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed For Complementary Use With TIP620, TIP621, TIP622


    OCR Scan     		PDF TIP625, TIP626, TIP627 TIP620, TIP621, TIP622 TIP626

    Untitled

    Abstract: No abstract text available
    Text: "34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC MICRO-T continued dF J b3t,7ES5 (DIODES/OPTO) 34C CI03a202 38202 D r - 5f- n MMT74 — NPN RF AMPLIFIER TRANSISTOR • designed for high-gain, low-noise amplifier, oscillator and mixer applications. TOP


    OCR Scan     		PDF CI03a202 MMT74 450-MHz

    BCW67

    Abstract: BCW58 BCW57 BCW57B BCW67BR BCW65 BCW66 BCW67A BCW68 BCW68HR-7N
    Text: BCW67 BCW68 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 -JUNE 1996_ PARTM ARKING D ETA ILSBCW 67A- DA BC W 67B- DB BCW 67C- DC BCW 68F- DF BCW 68G - DG BCW 68H - DH BCW67AR BCW67BR BCW67CR BCW68FR BCW68GR BCW68HR -


    OCR Scan     		PDF BCW67 BCW68 -BCW67A- BCW67B- BCW67C- BCW68F- BCW68G- BCW68H- BCW65 BCW58 BCW57 BCW57B BCW67BR BCW66 BCW67A BCW68HR-7N

    SC08810

    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON Ä 7 # M SR i[LiOT8raO@§ BCW67 BCW68 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW67A DA BCW67B DB BCW67C DC BCW68F DF BCW68G DG BCW68H DH . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING


    OCR Scan     		PDF BCW67 BCW68 BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H BCW65 BCW66 SC08810

    smd code 46n

    Abstract: SPB46N03L smd diode 46A 46n03l
    Text: SIEMENS SPP46N03L SPB46N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP46N03L Vfes 30 V b f lDS on @ VGS 46 A SPB46N03L 0.018 Q


    OCR Scan     		PDF SPP46N03L SPB46N03L SPB46N03L P-T0220-3-1 P-T0263-3-2 Q67040-S4147-A2 Q67040-S4743-A3 smd code 46n smd diode 46A 46n03l