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    DEVICE MARKING CODE SOT23-5 MOSFET Search Results

    DEVICE MARKING CODE SOT23-5 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    DEVICE MARKING CODE SOT23-5 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd diode marking Ja sot

    Abstract: No abstract text available
    Text: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide


    Original     		PDF CJ3404-HF OT-23 OT-23, MIL-STD-750, QW-JTR05 smd diode marking Ja sot

    MOSFET TRANSISTOR SMD MARKING CODE

    Abstract: MOSFET marking smd
    Text: Comchip MOSFET SMD Diode Specialist CJ3404-HF N-Channel Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -N-Channel -Enhancement mode field effect transistor. -Use advanced trench technology to provide


    Original     		PDF CJ3404-HF OT-23 OT-23, MIL-STD-750, QW-JTR05 MOSFET TRANSISTOR SMD MARKING CODE MOSFET marking smd

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN3112S AEC-Q101 J-STD-020 MIL-STD-202,

    BSS127S

    Abstract: K29 mosfet BSS127 K28 SOT23
    Text: BSS127 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C 600V 160Ω @ VGS = 10V SC59 SOT23 70mA • • • • • Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage


    Original     		PDF BSS127 DS35476 BSS127S K29 mosfet BSS127 K28 SOT23

    DIODES K29

    Abstract: No abstract text available
    Text: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C • Low Input Capacitance High BVDss rating for power application 600V 160Ω @ VGS = 10V SC59 SOT23 • 70mA • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original     		PDF BSS127 AEC-Q101 DS35476 DIODES K29

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it


    Original     		PDF BSS84 -130mA AEC-Q101 DS30149

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMG3420U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary 20V • Low On-Resistance RDS ON max ID max TA = +25°C • Low Input Capacitance • Fast Switching Speed 21mΩ @ VGS = 10V 6.5A • Low Input/Output Leakage 25mΩ @ VGS = 4.5V


    Original     		PDF DMG3420U AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: Comchip MOSFET SMD Diode Specialist CJ3401-HF P-Channel Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -P-Channel -High dense cell design for extremely low RDS(ON) 3 -Exceptional on-resistance and miximum DC current


    Original     		PDF CJ3401-HF OT-23 OT-23, MIL-STD-750, QW-JTR04

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it


    Original     		PDF BSS84 -130mA AEC-Q101 DS30149

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it


    Original     		PDF BSS84 -130mA AEC-Q101 DS30149

    DS30149

    Abstract: BSS84 BSS84 Equivalent BSS84Q-7-F BSS84 MARKING CODE
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF BSS84 -130mA AEC-Q101 DS30149 BSS84 BSS84 Equivalent BSS84Q-7-F BSS84 MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25°C • Low On-Resistance  Low Gate Threshold Voltage 122m @ VGS = -10V -2.7A  Low Input Capacitance 190m @ VGS = -4.5V -2.0A  Fast Switching Speed


    Original     		PDF DMP3160L AEC-Q101 -10V/-4

    BSS84Q-7-F

    Abstract: BSS84 Equivalent K84 SOT23 BSS84Q BSS84Q-13-F BSS84
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF BSS84 -130mA AEC-Q101 DS30149 BSS84Q-7-F BSS84 Equivalent K84 SOT23 BSS84Q BSS84Q-13-F BSS84

    device marking code sot23-5 mosfet

    Abstract: No abstract text available
    Text: Comchip MOSFET SMD Diode Specialist CJ3401-HF P-Channel Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free SOT-23 Features 0.118(3.00) 0.110(2.80) -P-Channel -High dense cell design for extremely low RDS(ON) 3 -Exceptional on-resistance and miximum DC current


    Original     		PDF CJ3401-HF OT-23 OT-23, MIL-STD-750, QW-JTR04 device marking code sot23-5 mosfet

    Untitled

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package


    Original     		PDF 2N7002A AEC-Q101 OT-23 OT-23 J-STD-020D MIL-STD-202, DS31360

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery


    Original     		PDF DMN3730U AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C


    Original     		PDF DMN2300U AEC-Q101

    BSS127

    Abstract: marking D09 BSS127S
    Text: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits • • • • • ID RDS ON V(BR)DSS TA = 25°C 600V Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1)


    Original     		PDF BSS127 DS35476 BSS127 marking D09 BSS127S

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it


    Original     		PDF 2N7002 210mA AEC-Q101 DS11303

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it


    Original     		PDF 2N7002 210mA AEC-Q101 DS11303

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it


    Original     		PDF 2N7002 210mA AEC-Q101 DS11303

    Untitled

    Abstract: No abstract text available
    Text: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it


    Original     		PDF BSS84 -130mA AEC-Q101 DS30149

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed


    Original     		PDF 2N7002K 380mA 310mA AEC-Q101 DS30896

    K23 SOT23 MARKING

    Abstract: No abstract text available
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating


    Original     		PDF BSS123 DS30366 K23 SOT23 MARKING