MO9072
Abstract: No abstract text available
Text: GUNN TRANSCEIVERS Voltage Controlled TM MO87127 – MO9140 Features ● Electronic Frequency Control ● High Doppler Sensitivity Levels ● Low AM and FM Noise Levels ● Direction-of-Motion Sensing ● Compact Size ● Pulsed Transceivers Available Applications
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MO87127
MO9140
MO9071,
MO9072
MO9410-1,
UG599/U
WR-28
MO9072
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radar detector 10.5 ghz local oscillator
Abstract: Silicon Point Contact Mixer Diodes dmc5910
Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes Features Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications Planar Passivated Dice for Reliability Uniform Characteristics Description Applications Alpha’s silicon Schottky barrier mixer diodes are de
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40GHz
MF5078-024
DMF5078-025
DMF4039-024
DMF4039-025
DMF5078-018
DMF5078-019
DMF4039-018
DMF4039-019
DMF5078-012
radar detector 10.5 ghz local oscillator
Silicon Point Contact Mixer Diodes
dmc5910
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radar detector 10.5 ghz local oscillator
Abstract: DMC5501 DMF-6106 DMF4039 dmf6106 005801 DMF6130-013 Silicon Point Contact Mixer Diodes
Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R 0 5 A S M M 3 Q D D l l M b 3bfl • ALP 43E D * Features T í á,í' ■ ■ ■ ■ ■ 07-07 Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications
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40GHz
in018
DMF4039-019
DMF5078-012
DMF5078-013
DMF4039-012
DMF4039-013
DMF5078-006
DMF5078-007
DMF4039-006
radar detector 10.5 ghz local oscillator
DMC5501
DMF-6106
DMF4039
dmf6106
005801
DMF6130-013
Silicon Point Contact Mixer Diodes
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Untitled
Abstract: No abstract text available
Text: ALPHA I'ND/ SEMICONDUC TOR 33E D • 0S65H43 DDDD7S3 3 * A L P Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes -v-o-7-0-1 Features ■ ■ ■ ■ ■ Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications
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0S65H43
P-041
P-076
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high resolution reflective optocoupler
Abstract: 894nm motion sensor doppler effect Balluff ROTARY ENCODER vcsel 1300nm VCSEL multimode 1300nm vcsel spice model motion DOPPLER 1550nm vcsels VCSEL
Text: VCSELs in Various Sensor Applications By: Dr. Jim Tatum First published in Proceedings of Sensors Expo 2005 FINISAR CORPORATION January 9, 2007 Contents VCSEL 101 What is a VCSEL? Where is it used? Why? VCSEL Sensor Attributes Advantages, Uniqueness, etc.
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850nm
1300nm
780nm
1550nm
1999m
650nm
1550nm
high resolution reflective optocoupler
894nm
motion sensor doppler effect
Balluff ROTARY ENCODER
vcsel 1300nm
VCSEL multimode 1300nm
vcsel spice model
motion DOPPLER
1550nm vcsels
VCSEL
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y-349 diode
Abstract: dmf6106 radar detector 10.5 ghz local oscillator DMF-6106 MF68 Alpha Industries Detector Diodes DIODE 349
Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes ED A lpha DMB, DMC, DMF Series Features • Bonded Junctions for Reliability ■ Low 1/f Noise ■ Low Turn On for Starved L.O. Applications ■ Planar Passivated Dice for Reliability ■ Uniform Characteristics
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CDB7619-000
Abstract: CDE7618-000 Silicon Detector Diodes
Text: EBA lpha Silicon Schottky Barrier Detector Diodes Features Both P-Type and N-Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes
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x band diode detector waveguide
Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
Text: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes
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Untitled
Abstract: No abstract text available
Text: High Performance Schottky Diodes Ultraminiature 0201 Surface Mount Technology Packaging Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog semiconductors. Leveraging core technologies, Skyworks offers high performance analog products supporting automotive,
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BRO365-12A
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bare die schottky diode
Abstract: CDB7619-000
Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction
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J-STD-020)
200847E
bare die schottky diode
CDB7619-000
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CME7660-203
Abstract: metal detector service manual CDP7624-207
Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction
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J-STD-020)
200847D
CME7660-203
metal detector service manual
CDP7624-207
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CME7660-000
Abstract: CDP7624-207 DDB2504-230 CME7660-207 CDB7620-203 200847C DDB2503-000 DDB2503-230 DDB2503-250 DDB2504-000
Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier and ZBD designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction
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J-STD-020)
200847C
CME7660-000
CDP7624-207
DDB2504-230
CME7660-207
CDB7620-203
200847C
DDB2503-000
DDB2503-230
DDB2503-250
DDB2504-000
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Applications • Detectors Mixers Features Available in both P-type and N-type low barrier designs Low 1/f noise Large bond pad chip design Planar passivated beam-lead and chip construction
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SQ04-0074.
200847H
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DDB2265-230
Abstract: DDB2265-250 DDB2503-220 DDB2503-230 DDB2503-250 DDB2504-220 DDB2504-230 DDB2504-250 pin diode model spice x band diode detector waveguide
Text: data sheet Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads Applications l D etectors Features l l l l l B oth P-type and N-type low barrier silicon available L ow 1/f noise B onded junctions for reliability P lanar passivated beam-lead and chip construction
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5503 dm
Abstract: DMF6130B DMF-6130B dm 465 k and ka band radar detector P041 005801 DMC550 p029 DMF6130BM
Text: 0585443 ALPHA I , I . 03 - j T | DSSS4 43 □□OD3bc5 2 WT-> • | 3 -r T * -J ~ / ~ O / Silicon Bonded and Pressure Contact - Schottky Barrier Mixer Diodes ALPHA INI/ SEMICONDUCTOR Features • Bonded Junctions for Reliability • Low 1/f N o ise • Low Turn O n for Starved L.O. Applications
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B4009
F6724
F5078Y
105-JAN
P-017
P-075
5503 dm
DMF6130B
DMF-6130B
dm 465
k and ka band radar detector
P041
005801
DMC550
p029
DMF6130BM
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cdb7619
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors Mixers Features Available in both P-type and N-type low barrier designs Low 1/f noise Large bond pad chip design Planar passivated beam-lead and chip construction
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J-STD-020)
SQ04-0073.
200847F
cdb7619
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diode RL 207
Abstract: gold metal detectors gold detector circuit free x band diode detector waveguide CDB7620-207 ka-band mixer DDB2503-250 DDB2504-000 DDB2504-230 DDB2265-000
Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications x Detectors Features x Available in both P-type and N-type low barrier silicon x Low 1/f noise x Bonded junctions for reliability x Planar passivated beam-lead and chip construction
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J-STD-020)
200847B
diode RL 207
gold metal detectors
gold detector circuit free
x band diode detector waveguide
CDB7620-207
ka-band mixer
DDB2503-250
DDB2504-000
DDB2504-230
DDB2265-000
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cross reference capillary rotary compressor
Abstract: ultrasonic flowmeter circuit
Text: Notice of Intellectual Property Rights The OMEGA Handbook Series is based upon original intellectual property rights that were created and developed by OMEGA. These rights are protected under applicable copyright, trade dress, patent and trademark laws. The distinctive, composite appearance of these Handbooks is uniquely identified with
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MG4200
Abstract: motorola oncore m12 t MG4100 diode SM 88A STMicroelectronics date code format GPS oncore M12 motorola oncore m12 schematic diagram receiver satellite 10,6 MHz tcxo oncore users manual
Text: August 5, 2004 Instant GPS IC Interface Control Drawing August 5, 2004 Document Number 92-G10564A Revision S Motorola Family of GPS Receivers GPS Products Group Automotive Communications & Electronic Systems Group Integrated Electronic Systems Sector Motorola Inc.
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92-G10564A
92-G10564A
MG4100specified
MG4200
motorola oncore m12 t
MG4100
diode SM 88A
STMicroelectronics date code format
GPS oncore M12
motorola oncore m12
schematic diagram receiver satellite
10,6 MHz tcxo
oncore users manual
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MG4200
Abstract: interfacing gps gsm satellite communication working all ic datasheet in one pdf file all ic data OSCILLATOR, TCXO, 16.384 MHZ RTCM-104 MG4100 diode SM 88A circuit schematics satellite TDMA L-Band
Text: November 30, 2004 Instant GPS IC Interface Control Drawing November 30, 2004 Document Number 92-G10564A Revision T Motorola Family of GPS Receivers GPS Products Group Automotive Communications & Electronic Systems Group Integrated Electronic Systems Sector
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92-G10564A
92-G10564A
MG4200
interfacing gps gsm
satellite communication working
all ic datasheet in one pdf file
all ic data
OSCILLATOR, TCXO, 16.384 MHZ
RTCM-104
MG4100
diode SM 88A
circuit schematics satellite TDMA L-Band
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creative subwoofer circuit diagram
Abstract: varil spll talking energy KWH meter introduction GSM based remote water pump control system circuit diagram Sim 8309 data gsm based energy meter billing circuit diagram of energy meter using AD7751 IC Creative 2.1 subwoofer circuit diagram 50hz sine flip flop oscillator d.331 transistor
Text: 1the exchange of circuits, systems, and software for real-world signal processing A NEW DIRECT-CONVERSION RADIO CHIPSET ELIMINATES IF STAGES page 3 Logarithmic Amplifiers Explained— Ask the Applications Engineer— 28 (page 30] ll-Electronic Power and Energy Meters (page 64)
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Flyback Transformers SANYO TV
Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)
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CDMA2000]
Flyback Transformers SANYO TV
RD1004
2SC5707
uhf 150w mosfet 12v
bfl4006
2SC5706 equivalent
Si sw diode 20V 0.2A SOT323
SSFP package
BBS3002
tv tube charger circuit diagrams
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amplifier advantages and disadvantages
Abstract: ultrasonic anemometer Thermistor hot-wire Ultrasonic Distance Sensor microchip disadvantages of Single-Slope adc motion sensor doppler wheatstone bridge smoke detector anemometer ultrasound circuit design OP AMP for Piezoelectric film Wheatstone Bridge amplifier
Text: AN990 Analog Sensor Conditioning Circuits – An Overview Author: Kumen Blake Microchip Technology Inc. INTRODUCTION Target Audience This application note is intended for hardware design engineers that need to condition the output of common analog sensors.
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AN990
DS00990A-page
amplifier advantages and disadvantages
ultrasonic anemometer
Thermistor hot-wire
Ultrasonic Distance Sensor microchip
disadvantages of Single-Slope adc
motion sensor doppler
wheatstone bridge smoke detector
anemometer ultrasound circuit design
OP AMP for Piezoelectric film
Wheatstone Bridge amplifier
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