DETECTOR 1100 NM Search Results

DETECTOR 1100 NM Result Highlights (4)

Part	Manufacturer	Description
TPH1100CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 49 A, 0.0111 Ω@10 V, High-speed diode, SOP Advance(N)
54ACT11004FK/B	Rochester Electronics LLC	54ACT11004 - HEX INVERTER, TTL-COMPATIBLE INPUTS
TPS3803G15DCKR	Texas Instruments	Low Power Voltage Detector 5-SC70
TPS3803-01DCKRG4	Texas Instruments	Low Power Voltage Detector 5-SC70 -40 to 85

DETECTOR 1100 NM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IR LED and photodiode PAIR DETECTOR Abstract: HBCS-1100 High Resolution Optical Reflective Sensor photodiode amplifier high resolution reflective bar code lens sensor ad 3215 Resolution Optical Reflective Sensor Text: High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution–0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject Ambient Light • TO-5 Miniature Sealed	Original	HBCS-1100 HBCS-1100 5965-5944E 5966-1623E IR LED and photodiode PAIR DETECTOR High Resolution Optical Reflective Sensor photodiode amplifier high resolution reflective bar code lens sensor ad 3215 Resolution Optical Reflective Sensor	PDF
IR LED and photodiode PAIR DETECTOR Abstract: HBCS-1100 T 427 transistor IR LED and photodiode pair HBCS1100 kodak 6080 Thermalloy 6177 To5 transistor header Text: H High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution–0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject Ambient Light • TO-5 Miniature Sealed	Original	HBCS-1100 HBCS-1100 IR LED and photodiode PAIR DETECTOR T 427 transistor IR LED and photodiode pair HBCS1100 kodak 6080 Thermalloy 6177 To5 transistor header	PDF
PIN-5DI Abstract: PIN-020A PIN-3CDI UDT Pin-040A PIN-10DI PIN-6DI PIN-13DI FIL-3C diodes 10di 13DI Text: PHOTOCONDUCTIVE SERIES PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS • • • • • • The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such	Original		PDF
IF-D92 Abstract: simple phototransistor fiber optic phototransistor Phototransistor IF-D92 Text: Plastic Fiber Optic Phototransistor IF-D92 DESCRIPTION The IF-D92 is a high sensitivity phototransistor detector housed in a “connectorless” style plastic fiber optic package. Optical response of the IF-D92 extends from 400 to 1100 nm making it compatible with a wide range of visible and	Original	IF-D92 IF-D92 90-degree simple phototransistor fiber optic phototransistor Phototransistor IF-D92	PDF
transistor JE 1090 Abstract: photodiode for CD rw Text: W fip l H E W L E T T m Lftm P A C K A R D High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject	OCR Scan	HBCS-1100 transistor JE 1090 photodiode for CD rw	PDF
VISIBLE LIGHT PHOTOdarlington TRANSISTOR Abstract: IF-D93 Text: Plastic Fiber Optic Photodarlington IF-D93 DESCRIPTION The IF-D93 is a very high sensitivity photodarlington detector housed in a “connector-less” style plastic fiber optic package. Optical response of the IF-D93 extends from 400 to 1100 nm making it compatible with a wide range of visible and near infrared LEDs and other optical sources. This includes 660 nm	Original	IF-D93 IF-D93 90-degree VISIBLE LIGHT PHOTOdarlington TRANSISTOR	PDF
G1qr Abstract: s4751 ir remote power meter cash drawer colorimeter Text: Selection Guide Features Spectral R esponse Range nm 200 400 600 800 10 00 M ajor Applications Ty p e No. Listed P age S 1 3 3 6 .S 1 3 3 7 Series 14, 15 S 1 2 2 6 ,S 1 227 Series 16, 17 18, 19 1200 Silicon Photodiodes 190 1100 190 U V to IR range, for precision photometry	OCR Scan	S2381 G1qr s4751 ir remote power meter cash drawer colorimeter	PDF
pinFET Abstract: No abstract text available Text: LASERTRON 53Ô3355 INC GQQQ307 b Ö L S R T - W S O Ql High-Speed pinFET Receiver Telecom trunk and junction applications Gigabit components for telecom High-responsivity 1300/1550 nm InGaAs detector High-speed GaAs 1C transimpedance preamplifier High-speed modulation and high gain	OCR Scan	GQQQ307 14-pin QDFF-120 QDFF-200 pinFET	PDF
555D Abstract: colorimeter uv photodiode for 254nm UDT model UDT-455 UDT-451 UDT-555d UDT-5550 UDT-555UV UDT Sensors Text: 0 D T SEN SOR S INC 4TE D • 15 37 11 5 0 G G 1 57 5 DIM ■ UDTS T'^/'£7 PHOTOPS SERIES Hybrid Photodetector/Am plifier C o m b in a tio n s LOW-NOISE DETECTORS. UDT photodiodes em ploy state-of-the-art technology to provide rugged detectors with high-speed and low-noise for	OCR Scan	0001P72 UDT-451 UDT-020D, UDT-020UV UDT-451 UDT-455, UDT-455HS, UDT-455UHS, UDT-455UV, UDT-455UV/LN 555D colorimeter uv photodiode for 254nm UDT model UDT-455 UDT-555d UDT-5550 UDT-555UV UDT Sensors	PDF
phototransistor peak 550 nm Abstract: Fototransistor phototransistor 550 nm phototransistor 650 nm IC 9260 GEO06840 OHM02257 OHF00601 Text: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung	Original	GEO06840 phototransistor peak 550 nm Fototransistor phototransistor 550 nm phototransistor 650 nm IC 9260 GEO06840 OHM02257 OHF00601	PDF
9260 transistor Abstract: No abstract text available Text: SFH 9260 Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector 6.2 5.8 3.4 3.0 4.2 3.8 2.1 1.7 0.0.1 0.15 0.13 Vorläufige Daten/Preliminary Data 0.5 0.3 6 5 4 1	Original	GEO06840 sfh9260 OHF00499 OHO02260 9260 transistor	PDF
fototransistor Abstract: phototransistor peak 550 nm phototransistor 600 nm GEOY6840 OHM02257 OHF00601 lichtschranken-anwendungen 9260 transistor phototransistor 650 nm TP 9260 Text: Reflexlichtschranke mit 660 nm - Emitter und Fototransistor - Detektor Reflective Interrupter with 660 nm - Emitter and Phototransistor - Detector SFH 9260 Wesentliche Merkmale • Roter Emitter 660 nm • Silizium Fototransistor • Geringe Sättigungsspannung	Original	GEOY6840 fototransistor phototransistor peak 550 nm phototransistor 600 nm GEOY6840 OHM02257 OHF00601 lichtschranken-anwendungen 9260 transistor phototransistor 650 nm TP 9260	PDF
PDDM981 Abstract: Wavelength Response 1100 to 1650 nm 1310nm TRANSMITTER CIRCUIT DIAGRAM Nanovation Technologies 1650nm pin detector Nanovation Text: PDDM981 Single Element PIN Detector Nanovation’s PDDM981 Single Element PIN Detector features a wide response wavelength, high reliability and a compact package. This transmitter is targeted toward telecom access and repeater applications. Features • High responsivity InGaAs PIN detector	Original	PDDM981 1650nm PDDM981 1310nm, Wavelength Response 1100 to 1650 nm 1310nm TRANSMITTER CIRCUIT DIAGRAM Nanovation Technologies 1650nm pin detector Nanovation	PDF
Untitled Abstract: No abstract text available Text: Si photodiodes S2592/S3477 series Thermoelectrically cooled photodiodes for low-light-level detection in UV to near IR The S2592/S3477 series sensors combine a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included in the same package to sense the Si photodiode chip temperature. This allows stable operation over long periods of time, making these sensors suitable for low-light-level detection where a high S/N is required.	Original	S2592/S3477 S2592 S3477 C1103-04) A3179 B1201, KSPD1003E08	PDF

L0820 Abstract: temic 3x Text: Temic TCSS1100/2100 Semiconductors Transmissive Optical Sensor Description This device has a compact construction where the wavelength is 950 nm. The detector consists of a photoemitting-light sources and the detectors are located face logic IC with Schmitt trigger and open collector output,	OCR Scan	TCSS1100/2100 D-74025 26-Jun-98 L0820 temic 3x	PDF
a3020 Abstract: multichannel spectrophotometer nmos shift register colorimeter C5964 C5964-0800 C5964-0900 C5964-0910 C5964-1010 S5930 Text: IMAGE SENSOR NMOS multichannel detector head C5964 series Incorporates a thermoelectrically-cooled NMOS linear image sensor C5964 series is a family of multichannel detectors developed for spectrophotometry in the UV to near infrared range up to 1000 nm . C5964	Original	C5964 C5964 S5930/S5931/S8382/S8383 SE-171 KACC1018E02 a3020 multichannel spectrophotometer nmos shift register colorimeter C5964-0800 C5964-0900 C5964-0910 C5964-1010 S5930	PDF
Untitled Abstract: No abstract text available Text: ED-011IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 245 260 260 p-Electrode p-GaAs epi layer	Original	ED-011IRC 105um 245um 280um 260um 260um 02OPTOELECTRONIC	PDF
420um Abstract: No abstract text available Text: ED-018IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 435 420 p-Electrode p-GaAs epi layer	Original	ED-018IRC 140um 420um 280um 435umx 435um 420um	PDF
Untitled Abstract: No abstract text available Text: Electron beam detector Si photodiode S11141 S11142 High sensitivity, direct detection of low energy 2 keV or more electron beams Features Applications Direct detection of low energy (2 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron	Original	S11141 S11142 S11141: S11142: SE-171 KSPD1080E01	PDF
GaAs wafer Abstract: No abstract text available Text: ED-012IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripherals • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 285 270 p-Electrode p-GaAs epi layer	Original	ED-012IRC 110um 270um 280um 285um 285um GaAs wafer	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - Emitters, Detectors, Optical Sensors Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors	Original	VCNL4010 VCNL4020 VCNL3020 VMN-SG2123-1404	PDF
Untitled Abstract: No abstract text available Text: ED-016IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to si detector • High power • Low forward voltage • Remote Controller • Pperipheral Device • Photocoupler • Photointerrupter	Original	ED-016IRA 130um 370um 280um 385um 385um	PDF
ED-014IRA Abstract: GaAs wafer ED-014 Text: ED-014IRA AlGaAs/GaAs IrED Chips 940 nm ! Typical Applications : ! Features : • AlGaAs/GaAs wafer • remote controller • good spectral matched to Si detector • peripherals • high power • photocoupler • low forward voltage • photointerrupter	Original	ED-014IRA ED-014IRA GaAs wafer ED-014	PDF
ED-010IRA Abstract: No abstract text available Text: ED-010IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to Si detector • High power • Remote Controller • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um	Original	ED-010IRA 105um 220um 280um ED-010IRA	PDF

DETECTOR 1100 NM Search Results

DETECTOR 1100 NM Result Highlights (4)

DETECTOR 1100 NM Datasheets Context Search

IR LED and photodiode PAIR DETECTOR

IR LED and photodiode PAIR DETECTOR

PIN-5DI

IF-D92

transistor JE 1090

VISIBLE LIGHT PHOTOdarlington TRANSISTOR

G1qr

pinFET

555D

phototransistor peak 550 nm

9260 transistor

fototransistor

PDDM981

Untitled

L0820

a3020

Untitled

420um

Untitled

GaAs wafer

Untitled

Untitled

ED-014IRA

ED-010IRA