Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 20.3.1998 FZ 1600 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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der FZ 1600 R 12 KF4
Abstract: 12KF4
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 20.3.1998 FZ 1600 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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der FZ 1600 R 12 KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1600 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 20.3.1998 FZ 1600 R 12 KF4 Höchstzulässige Werte / Maximum rated values
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 16 KF4 61,5 61,5 13 190 31,5 1 171 57 2 4 3 C C C E M4 M8 E E 4,0 tief C 2,5 tief 28 G E 7 8 6 20,25 5 7 41,25 for M6 screw 79,4 external connection to be done C C C E E
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IGBT 1500
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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TRANSISTOR TC 100
Abstract: IGBT FZ 800
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 17 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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eupec FZ 800 R 16
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 800 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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IGBT FZ 1200 r12
Abstract: FZ800R12KF4 fz 1200 r12 kf 4 1G18
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be
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A15/97
IGBT FZ 1200 r12
FZ800R12KF4
fz 1200 r12 kf 4
1G18
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IGBT EUPEC FZ 1800 R
Abstract: IGBT FZ 1000 KF423 IGBT FZ 1800 fz 79 1500 eupec FZ 1800 G1 TRANSISTOR FZ 101
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1800 R 16 KF4 61,5 61,5 13 190 31,5 1 171 57 2 4 3 C C C E M4 M8 E E 4,0 tief C 2,5 tief 28 G E 7 8 6 20,25 5 7 41,25 for M6 screw 79,4 external connection to be done C C C E E
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IGBT 1500
Abstract: der FZ 1600 R 12 KF4 ic 7800 IGBT module FZ 1200
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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ic 7800
Abstract: 16KF4
Text: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 16 KF4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection (to be done) VWK Apr. 1997
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IGBT FZ 1600 r12 kf4
Abstract: FZ800R12KF4 4kA IGBT IGBT module FZ 600 R12 G1 TRANSISTOR IGBT FZ 600 R12
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be
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A15/97
FZ800R12KF4
IGBT FZ 1600 r12 kf4
FZ800R12KF4
4kA IGBT
IGBT module FZ 600 R12
G1 TRANSISTOR
IGBT FZ 600 R12
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FZ800R12KF4
Abstract: IGBT FZ 1200 r12 IGBT module FZ 600 R12 IGBT FZ 600 R12 G1 TRANSISTOR 800R12KF4 IGBT FZ 1600 r12 kf4 IGBT FZ 200
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be
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A15/97
FZ800R12KF4
FZ800R12KF4
IGBT FZ 1200 r12
IGBT module FZ 600 R12
IGBT FZ 600 R12
G1 TRANSISTOR
800R12KF4
IGBT FZ 1600 r12 kf4
IGBT FZ 200
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FZ800R12KF4
Abstract: 800A DC diode IGBT FZ 1600 r12 kf4 fZ80
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 800 R 12 KF 4 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be
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A15/97
FZ800R12KF4
800A DC diode
IGBT FZ 1600 r12 kf4
fZ80
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diac kr 206
Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
Text: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com
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element14
diac kr 206
BAS70WT
SMBJ11CA
FR107 SOD-123
db1 diac
EX 0045 bm diode zener
10A06 sources
812 6V8A
Zener Diode pev LF marking
PL 15Z DIODE
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funkschau
Abstract: RGN2004 EZ707 ERG IC 1118 rgn 1064 AZ4 philips Scans-048 RGN1504 telefunken rohren PP031
Text: S ta rk e rw e ite rte , v ö llig neu b e c rb e ite te A u fla g e l Q i / I / 4 0 I FUNKSCHAU-ROHRENTABELLE D ie F U N K S C H A U - R ö h re n to b e lle b rin g t in ih re m H o uptte il d ie a u s fü h rlic h e n D a te n un d S o c k e ls c h a lto n g e n
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