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    DEPLETION MODE MOSFET N-CHANNEL 1000V Search Results

    DEPLETION MODE MOSFET N-CHANNEL 1000V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DEPLETION MODE MOSFET N-CHANNEL 1000V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 1.6A 10Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000


    Original     		PDF IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 O-252 O-263 O-220) O-263 O-220 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V


    Original     		PDF IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 800mA O-252 O-263 O-220) O-263 O-220

    IXTP08N100D2

    Abstract: IXTA08N100D2 IXTY08N100D2 08N100 08n10 500VID ixtp08n100 T08N
    Text: Preliminary Technical Information IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V


    Original     		PDF IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 800mA O-252 O-263 O-220) O-263 O-220 IXTP08N100D2 IXTA08N100D2 IXTY08N100D2 08N100 08n10 500VID ixtp08n100 T08N

    IXTP1R6N100D2

    Abstract: IXTY1R6N100D2
    Text: IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 1.6A 10Ω Ω N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings TO-263 AA (IXTA) 1000 V Continuous ±20


    Original     		PDF IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 O-252 O-263 O-220AB O-220) O-252 O-220 IXTP1R6N100D2

    IXTH6N100D2

    Abstract: No abstract text available
    Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous


    Original     		PDF IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 O-263 O-220AB O-220 O-247) O-263 O-247 IXTH6N100D2

    T3N100

    Abstract: IXTA3N100D2 3n100 ixta3n100 IXTP3N100D2
    Text: Preliminary Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM


    Original     		PDF IXTA3N100D2 IXTP3N100D2 O-263 O-220) O-263 O-220 O-220AB 100ms 3N100D2 T3N100 IXTA3N100D2 3n100 ixta3n100 IXTP3N100D2

    IXTH6N100D2

    Abstract: t6n100 IXTA6N100D2 IXTP6N100D2 T6N10 6N100D2 diode 6A 1000v
    Text: Preliminary Technical Information IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous


    Original     		PDF IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 O-263 O-220AB O-220 O-247) O-263 O-247 IXTH6N100D2 t6n100 IXTA6N100D2 IXTP6N100D2 T6N10 6N100D2 diode 6A 1000v

    Untitled

    Abstract: No abstract text available
    Text: Depletion Mode MOSFET VDSX ID on IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 RDS(on) = > ≤ 1000V 1.6A 10Ω Ω N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings TO-263 AA (IXTA) 1000 V Continuous ±20


    Original     		PDF IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 O-252 O-263 O-220) O-263 O-220 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA3N100D2 IXTP3N100D2 O-263 O-220) O-263 O-220 O-220AB 100ms 3N100D2

    IXTA08N100D2HV

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA08N100D2HV High Voltage Depletion Mode MOSFET VDSX ID on RDS(on) = >  1000V 800mA 21  N-Channel TO-263HV G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 1000 V VDGX TJ = 25C to 150C, RGS = 1M


    Original     		PDF IXTA08N100D2HV 800mA O-263HV 062in. 100ms 08N100D2 IXTA08N100D2HV

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 1.6A 10Ω Ω TO-252 (IXTY) G S D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 O-252 O-220) O-263 100ms 1R6N100D2

    08N100D2

    Abstract: No abstract text available
    Text: Advance Technical Information IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 800mA O-252 O-220) O-263 100ms 08N100D2

    IXTP01N100D

    Abstract: 01N100D TO-251 weight IXTU01N100D IXTY01N100D IXTP01N100 depletion mode mosfet n-channel 1000V
    Text: IXTY01N100D IXTU01N100D IXTP01N100D High Voltage Power MOSFET VDSX = ≤ RDS on N-Channel, Depletion Mode 1000V 80Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)


    Original     		PDF IXTY01N100D IXTU01N100D IXTP01N100D O-252 O-251 O-220) TY01N100D 100ms IXTP01N100D 01N100D TO-251 weight IXTU01N100D IXTY01N100D IXTP01N100 depletion mode mosfet n-channel 1000V

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Power MOSFET VDSX IXTY01N100D IXTU01N100D IXTP01N100D = ≤ RDS on 1000V 80Ω Ω N-Channel, Depletion Mode TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)


    Original     		PDF IXTY01N100D IXTU01N100D IXTP01N100D O-252 O-251 100ms 01N100D

    LCA717

    Abstract: 0-10v to 4-20ma cpc9909 IX2127 PM1206 en50130-4 CPC1020 CPC1002N deutsch relays inc 35v, 1amp smps circuits
    Text: Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs, manufactures, and markets a wide variety of semiconductor devices. Clare’s wafer fabrication facility features a 600V BCDMOS process on a bonded-wafer, silicon-on-insulator, trench-isolated


    Original     		PDF MX887P MX844 12-Bit MX887D LCA717 0-10v to 4-20ma cpc9909 IX2127 PM1206 en50130-4 CPC1020 CPC1002N deutsch relays inc 35v, 1amp smps circuits

    cpc9909

    Abstract: 6-pin smps power control ic cpc1943 MXHV9910 0-10v to 4-20ma Line Driver SHDSL IX2127 CPC1230 opamps catalog deutsch relays inc
    Text: Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs, manufactures, and markets a wide variety of semiconductor devices. Clare’s wafer fabrication facility features a 600V BCDMOS process on a bonded-wafer, silicon-on-insulator, trench-isolated


    Original     		PDF MX887P MX844 12-Bit MX887D cpc9909 6-pin smps power control ic cpc1943 MXHV9910 0-10v to 4-20ma Line Driver SHDSL IX2127 CPC1230 opamps catalog deutsch relays inc

    A NEW GENERATION OF HIGH PERFORMANCE MOSFET DRIVERS FEATURES HIGH CURRENT, HIGH SPEED OUTPUTS

    Abstract: CPC1225N
    Text: 9  # #0 Clare 2009/2010 Product Catalog Semiconductor Products Complete data sheets are available for downloading at Clare’s website: http://www.clare.com Clare, a wholly owned subsidiary of IXYS Corporation, located 20 miles north of Boston, Massachusetts, USA, designs,


    Original     		PDF N1016, D-68623 CH-2555 A NEW GENERATION OF HIGH PERFORMANCE MOSFET DRIVERS FEATURES HIGH CURRENT, HIGH SPEED OUTPUTS CPC1225N

    1000w inverter PURE SINE WAVE schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
    Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design


    Original     		PDF

    IXEP1400

    Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		PDF CH-2555 N1016, IXEP1400 CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844

    IXEP1400

    Abstract: CPC1706 CPC1020N
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.


    Original     		PDF CH-2555 N1016, IXEP1400 CPC1706 CPC1020N

    LBA716

    Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
    Text: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division


    Original     		PDF N1016, CH-2555 LBA716 IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219

    flyback samsung

    Abstract: flyback transformer samsung
    Text: INTRODUCTION TO SAMSUNG’S SFET FAMILY Since the introduction of the first Power MOSFET products in the mid-70's, these devices have emerged as widely ac­ cepted components in medium-to-high frequency power control applications. Advances in Doubled Diffused MOS DMOS


    OCR Scan     		PDF mid-70 flyback samsung flyback transformer samsung

    flyback samsung

    Abstract: flyback 1000w SMPS 1000W smps design 1000w
    Text: INTRODUCTION TO SAMSUNG’S SFET FAMILY Since the introduction of the first Power MOSFET products in the m id-70’s, these devices have emerged as widely ac­ cepted components in mediunv-to-high frequency power control applications. Advances in Doubted Diffused MOS DMOS


    OCR Scan     		PDF id-70 flyback samsung flyback 1000w SMPS 1000W smps design 1000w

    hitachi mosfet power amplifier audio application

    Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
    Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3


    OCR Scan     		PDF RE79-24 hitachi mosfet power amplifier audio application 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56